Retarded Growth of Sputtered HfO2 Films on Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Koji Kita ◽  
Masashi Sasagawa ◽  
Masahiro Toyama ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Film Growth ◽  
Early Stage ◽  
Gate Oxide ◽  
Interface Layer ◽  
Film Deposition ◽  
Si Substrate ◽  
Equivalent Thickness ◽  
Ternary Compounds ◽  
Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

Retarded Growth of Sputtered HfO2 Films on Germanium

2004 ◽  
Vol 811 ◽  
Author(s):  
Koji Kita ◽  
Masashi Sasagawa ◽  
Masahiro Toyama ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Film Growth ◽  
Early Stage ◽  
Gate Oxide ◽  
Interface Layer ◽  
Film Deposition ◽  
Si Substrate ◽  
Equivalent Thickness ◽  
Ternary Compounds ◽  
Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

scholarly journals Controlling the flux of reactive species: a case study on thin film deposition in an aniline/argon plasma

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
D. Sciacqua ◽  
C. Pattyn ◽  
A. Jagodar ◽  
E. von Wahl ◽  
T. Lecas ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Argon Plasma ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Capacitively Coupled ◽  
Low Temperature Plasmas ◽  
Free Films

Abstract The plasma based synthesis of thin films is frequently used to deposit ultra-thin and pinhole-free films on a wide class of different substrates. However, the synthesis of thin films by means of low temperature plasmas is rather complex due to the great number of different species (neutrals, radicals, ions) that are potentially involved in the deposition process. This contribution deals with polymerization processes in a capacitively coupled discharge operated in a mixture of argon and aniline where the latter is a monomer, which is used for the production of plasma-polymerized polyaniline, a material belonging to the class of conductive polymers. This work will present a particular experimental approach that allows to (partially) distinguish the contribution of different species to the film growth and thus to control to a certain extent the properties of the resulting material. The control of the species flux emerging from the plasma and contributing to the film growth also sheds new light on the deposition process, in particular with respect to the role of the ion component. The analysis of the produced films has been performed by means of Fourier Transform Infrared spectroscopy (FTIR) and Near Edge X-ray Absorption Fine Structure spectroscopy (NEXAFS).

Study on the Growth of Crystalline Er2O3 Films on Si Substrates by RHEED Patterns

2011 ◽  
Vol 486 ◽  
pp. 163-166
Author(s):  
Yan Yan Zhu ◽  
Run Xu ◽  
Ze Bo Fang
Keyword(s):  
Film Growth ◽  
Interface Layer ◽  
High Energy ◽  
High Substrate Temperature ◽  
Initial Growth ◽  
High Energy Electron ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Oxidation Effect

Er2O3 films with good crystallinity have been achieved on an oxidized Si (111) surface by molecule beam epitaxy. The initial growth of Er2O3 films epitaxially grown on Si surfaces is investigated by in situ reflection high energy electron diffraction. An interface layer was formed at the very beginning of the growth of Er2O3 film on Si, which is supposed to be attributed to the Er atom catalytic oxidation effect. The results obtained indicate that with the film growth process continued, oxygen deficient Er oxide captures oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O2 pressure is insufficient at a high substrate temperature such as 700°C in our case.

Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]

2011 ◽  
Vol 679-680 ◽  
pp. 107-110
Author(s):  
Tae Woo Lee ◽  
Im Gyu Yeo ◽  
Byoung Chul Shin ◽  
Won Jae Lee ◽  
Mi Seon Park ◽  
...  
Keyword(s):  
Boundary Layer ◽  
Epitaxial Growth ◽  
Optical Microscope ◽  
Source Material ◽  
Film Deposition ◽  
Color Patterns ◽  
Si Substrate ◽  
Si Substrates ◽  
Growth Profiles ◽  
Homogeneous Film

We adopted HMDS(Hexamethyledisilane) as a SiC(Silicon carbide) source material for epitaxial growth of 3C-SiC on Si substrate. Various growth profiles were investigated to optimize hetero-epitaxial growth of 3C-SiC layers. We also focused on the homogeneous film deposition of 3C-SiC on Si by employing two susceptor shapes, flat and tilted susceptors, to control a thickness of the boundary layer formed on the Si substrate. Fringe color patterns were observed on 3C-SiC layer on Si and hence it was easy to characterize the film uniformity by analyzing this color. 3C-SiC epitaxial layers were systematically analyzed by an optical microscope, a Raman spectroscopy, a SEM and an XRD.

Low-Temperature (450 °C) Poly-Si Thin Film Deposition on SiO2 and Glass using a Microcrystalline-Si Seed Layer

1997 ◽  
Vol 472 ◽  
Author(s):  
D. M. Wolfe ◽  
F. Wang ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Seed Layer ◽  
Film Growth ◽  
Hydrogen Plasma ◽  
Microstructural Characterization ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Remote Plasma ◽  
Si Substrates

ABSTRACTA low-temperature (450 °C), remote plasma-assisted CVD process for deposition of poly-Si thin films on SiO2 and Corning 7059 glass in which interface formation is separated from bulk film growth has been developed. This approach is based on first depositing an ultra-thin (<100 Å) microcrystalline-Si seed layer onto the oxide in order to provide nucleation sites at which low-temperature poly-Si film growth can be initiated. Conditions for poly-Si film deposition were optimized by using a low-temperature, remote plasma process that had previously yielded epitaxial growth of Si thin films on crystalline Si substrates. Microstructural characterization was performed on poly-Si films grown with different seed layer thicknesses, and additionally with exposure of this seed layer to a predeposition hydrogen plasma treatment. Results demonstrated that the seed layer thickness and surface morphology played a significant role in promoting crystallinity in the poly-Si overlayer. For example using deposition conditions that yielded epitaxial film growth on Si substrates, films deposited on un-seeded oxide substrates were amorphous, whereas those deposited using a seed layer were polycrystalline. This indicated that interfacial nucleation was the rate limiting step in promoting the low-temperature deposition of poly-Si thin films.

The Interfacial Reactions in Ti/Si and Ni/Si Systems Observed by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
S. Tanigawa ◽  
L. Wei ◽  
Y. Tabuki
Keyword(s):  
Diffusion Length ◽  
Positron Beam ◽  
Thin Film Deposition ◽  
Kirkendall Effect ◽  
Film Deposition ◽  
Si Substrate ◽  
Positron Energy ◽  
One Dimensional ◽  
Si Substrates ◽  
Dimensional Diffusion

ABSTRACTThe formation of suicides via the thin-film deposition of transition metals onto Si substrates has been investigated by a monoenergetic positron beam. The Doppler broadened spectra of annihilation radiations in the as-deposited state and the silicide-formed state of the Ti/Si and Ni/Si systems were measured as a function of the incident positron energy between 0.1 keV and 30 keV. From the depth dependence of positron annihilation characters, the diffusion length of positron was determined on the basis of one dimensional diffusion models. In the case of the Ti/Si, the formation of the suicides did not induce the shortening of positron diffusion length in Si substrate. On the contrary, the diffusion length of positrons in formed suicides was very short indicating the presence of a great number of positron traps in suicides. From this fact, the moving species during the silicidation may be Ti atoms. On the other hand, in the case of Ni/Si, the silicidation induced a very short diffusion length of positrons in the Si substrate. On the contrary, the diffusion length in the formed suicide is long to a comparable extent expected defect-free metals. From this fact, the moving species may be Si atoms. In the present parer, the first report on the microscopic observation of Kirkendall effect in metal/Si systems by means of a monoenergetic positron beam will be given.

In-Situ Rheed Observation of Mocvd-Gan Film Growth

2001 ◽  
Vol 693 ◽  
Author(s):  
Masatomo Sumiya ◽  
Noritaka Ogusu ◽  
Kouhei Osada ◽  
Shunro Fuke
Keyword(s):  
Buffer Layer ◽  
Film Growth ◽  
Deposition Process ◽  
Film Deposition ◽  
Total Flow ◽  
Total Flow Rate ◽  
Gan Film ◽  
Lattice Mismatched Substrate

AbstractWe developed the MOCVD apparatus equipped with RHEED system, which enable us to observe in-situ and real time RHEED for GaN film growth in ~100mTorr of pressure. We attempted to grow GaN film with this MOCVD chamber in 100mTorr. The in-situ RHEED was subsequently observed along the film deposition process in order to understand both the role of buffer layer and the mechanism of GaN film growth by MOCVD on highly lattice-mismatched substrate like sapphire. The results indicate that oxygen removed from the sapphire surface was observed during its cleaning in H2 flow at 1100°C. The dependence of re-crystallization and evaporation of the buffer layer on the annealing ambient was also detected. Although the nitrogen was slightly deficient, HT-GaN film with smooth surface was obtained in 100mTorr by adding H2 gas and reducing total flow rate. In preliminary deposition, the RHEED oscillation-like was observed in MOCVD-GaN growth. Thus, our developing deposition system has a potential to understand the growth mechanism with atomic level.

Study of Thermal Stability of Cvd Ta205/Si Interface

1999 ◽  
Vol 567 ◽  
Author(s):  
A. Y. Mao ◽  
K. A. Son ◽  
J. M. White ◽  
D. L. Kwong ◽  
D. A. Roberts ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Interface Layer ◽  
Film Deposition ◽  
Ex Situ ◽  
Reduced Form ◽  
Si Substrates ◽  
Temperature Programmed ◽  
Major Chemical ◽  
Temperature Programmed Reaction

ABSTRACTThe effects of vacuum and inert gas annealing of ultra-thin (20Å) CVD Ta2O5 films deposited on Si substrates, with and without oxynitride interface layer, on the Ta2O5/Si interface stability were examined extensively by means of in-situ X-ray Photoelectron Spectroscopy (XPS), ex-situ Time-of-Flight Secondary Ion mass Spectrometry (ToF-SIMS), and Temperature Programmed Reaction (TPR). When annealed to 680 °C for up to 50 min, changes in ∼ 20Å Ta2O5 films formed on Si(100) are negligible, but annealing to 820 °C for 10 min in vacuum, Ar or N2 produces major chemical restructuring. SiO is formed at the Ta2O5 - Si(100) interfaces and becomes incorporated into the tantalum oxide. A reduced form of Ta, attributed to TaSix, forms at the buried interface. Extending the annealing time to 20 min produces no further changes. SiO desorbs during annealing at 1000 °C. Nitriding Si prior to forming the Ta2O5 film deposition inhibits these processes.

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

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