Fabrication of Tungsten-Tellurite Glass Thin Films using Radio Frequency Magnetron Sputtering Method and Optical Property Characterization

2004 ◽  
Vol 817 ◽  
Author(s):  
Ki-Young Yoo ◽  
Sanghoon Shin ◽  
Youngman Kim ◽  
Jong-Ha Moon ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Gas Flow ◽  
Room Temperature ◽  
Tellurite Glass ◽  
Processing Parameters ◽  
Flow Ratio ◽  
Rf Power ◽  
Gas Flow Ratio

AbstractTungsten-tellurite glass thin films were fabricated by radio-frequency (rf) magnetron sputtering method at various processing parameters such as substrate temperatures, Ar/O2 processing gas flow ratio, processing pressure, and rf power from a 70TeO2-30WO3 target fabricated by solid–state sintering method. The effects of processing parameters on the growth rate, the surface morphologies, the crystallinity, and refractive indices of thin films were investigated using atomic force microscopy, X-ray diffractometer, scanning electron microscopy, and UV spectrometer. Amorphous glass thin films with a surface roughness of 4∼6 nm were obtained only at room temperature and crystalline phase were observed in all as-deposited thin films prepared at above the room temperature. The deposition rate strongly depends on the processing parameters. It increases as the rf power increases and the processing pressure decreases. Especially, it changes remarkably as varying the Ar/O2 gas flow ratio from 40sccm/0sccm to 0sccm/40sccm. When the films were formed in pure Ar atmosphere it shows a deposition rate of ∼0.2 μm /h, whereas ∼1.5 μm/h when the films was formed in pure O2 atmosphere.

Preparation and Characterization of 70TeO2-30WO3 Glass Thin Films by Radio-Frequency Magnetron Sputtering Method

2007 ◽  
Vol 124-126 ◽  
pp. 487-490 ◽  
Author(s):  
Jin Hyeok Kim ◽  
Ki Young Yoo ◽  
Sang Hoon Shin ◽  
Sun Hyun Youn ◽  
Jong Ha Moon
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Rate ◽  
Room Temperature ◽  
Processing Parameters ◽  
Radio Frequency Magnetron ◽  
Refractive Indices ◽  
Bandgap Energy ◽  
Radio Frequency Magnetron Sputtering

70TeO2-30WO3 glass thin films were fabricated using radio-frequency magnetron sputtering method and the effects of processing parameters on the growth rate, the surface morphologies, the crystallinity, and refractive indices of thin films have been investigated using AFM, XRD, SEM, and UV-Vis-IR spectrometer. Amorphous glass thin films with surface roughness of 4~6 nm could be formed only at room temperature and crystalline WO3 phase was observed in all the films prepared at above the room temperature. The deposition rate strongly depended on the processing parameters. It increased with increasing rf power and with decreasing processing pressure. Especially, it changed remarkably as varying the Ar/O2 gas flow ratio from 40sccm/0sccm to 0sccm/40sccm. When the films were formed in pure Ar atmosphere it shows a deposition rate of ~0.2 μm/h, whereas ~1.5 μm/h when the films was formed in pure O2 atmosphere. The refractive indices of TeO2-WO3glass thin films could be measured to be about 1.849~2.165 depending on the wavelength in the range of 500-1100 nm and the bandgap energy of glass thin film was ~3.34 eV.

The Structure and Magnetic Properties of NiZn-Ferrite Films Deposited by Magnetron Sputtering at Room Temperature

2013 ◽  
Vol 690-693 ◽  
pp. 1702-1706 ◽  
Author(s):  
Shuang Jun Nie ◽  
Hao Geng ◽  
Jun Bao Wang ◽  
Lai Sen Wang ◽  
Zhen Wei Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Saturation Magnetization ◽  
Room Temperature ◽  
Oxygen Flow ◽  
Flow Ratio ◽  
Study Results ◽  
Ferrite Thin Films ◽  
Ferrite Films

NiZn-ferrite thin films were deposited onto silicon and glass substrates by radio frequency magnetron sputtering at room temperature. The effects of the relative oxygen flow ratio on the structure and magnetic properties of the thin films were investigated. The study results reveal that the films deposited under higher relative oxygen flow ratio show a better crystallinity. Static magnetic measurement results indicated that the saturation magnetization of the films was greatly affected by the crystallinity, grain dimension, and cation distribution in the NiZn-ferrite films. The NiZn-ferrite thin films with a maximum saturation magnetization of 151 emucm-3, which is about 40% of the bulk NiZn ferrite, was obtained under relative oxygen flow ratio of 60%.

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

2022 ◽  
Vol 1048 ◽  
pp. 158-163
Author(s):  
Mekala Lavanya ◽  
Srirangam Sunita Ratnam ◽  
Thota Subba Rao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Visible Region ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Glass Substrates ◽  
Gas Flow Ratio

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

Dependence of Electrical and Optical Properties of the Al Doped ZnO for Transparent Conductors Deposited by rf–Magnetron Sputtering on the O2/Ar Gas Flow Ratio

2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Magnetron Sputter Deposition ◽  
Ar Gas

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

Sign in / Sign up

Export Citation Format

Share Document