A Nucleation Study of GaN Multifunctional Nanostructures

2004 ◽  
Vol 831 ◽  
Author(s):  
Gupta Shalini ◽  
Kang Hun ◽  
Strassburg Martin ◽  
Asghar Ali ◽  
Senawiratne Jayantha ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Mocvd Growth ◽  
Aspect Ratios ◽  
Nucleation Sites ◽  
Wide Range ◽  
Metal Organic ◽  
Multifunctional Nanostructures

ABSTRACTThis paper reports the Metal Organic Chemical Vapor Deposition (MOCVD) growth of GaN nanostructures. The use of MOCVD allows the direct integration of these nanostructures into pre-existing device technology. The formation of GaN nanostructures grown on AlN epitaxial layers were studied as a function of growth temperature, growth rate, V-III ratio and the amount of deposited material. A wide range of temperatures from 800 °C to 1100 °C and V-III ratios from 30 to 3500 were applied to determine the optimal growth conditions for nucleation studies in a modified production reactor. Small GaN nanostructures with lateral dimensions below 50 nm and low aspect ratios were obtained using relatively low temperatures of 815 °C and extreme metal-rich growth conditions. Island densities up to 1010 cm−2 were achieved using silane as an anti-surfactant to increase the available nucleation sites. Manganese has been incorporated into these nanostructures to enhance the multifunctional ferromagnetic properties of GaMnN.

scholarly journals Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4050 ◽  
Author(s):  
Chuan-Yang Liu ◽  
Ya-Chao Zhang ◽  
Sheng-Rui Xu ◽  
Li Jiang ◽  
Jin-Cheng Zhang ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Layer Growth ◽  
Organic Chemical ◽  
Propagation Mechanism ◽  
Nucleation Layer ◽  
Low Dislocation Density ◽  
Structural And Electrical Properties ◽  
Metal Organic

In this work, a sputtered AlN template is employed to grow high-quality AlGaN/GaN heterostructures, and the effects of AlN nucleation layer growth conditions on the structural and electrical properties of heterostructures are investigated in detail. The optimal growth condition is obtained with composited AlN nucleation layers grown on a sputtered AlN template, resulting in the smooth surface morphology and superior transport properties of the heterostructures. Moreover, high crystal quality GaN material with low dislocation density has been achieved under the optimal condition. The dislocation propagation mechanism, stress relief effect in the GaN grown on sputtered AlN, and metal organic chemical vapor deposition AlN nucleation layers are revealed based on the test results. The results in this work demonstrate the great potential of AlGaN/GaN heterostructures grown on sputtered AlN and composited AlN nucleation layers for microelectronic applications.

MOCVD Growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration and Growth Duration on the In-Incorporation in InGaN

2001 ◽  
Vol 680 ◽  
Author(s):  
Marco Schowalter ◽  
Brigitte Neubauer ◽  
Andreas Rosenauer ◽  
Dagmar Gerthsen ◽  
Oliver Schön ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Growth Duration ◽  
Mocvd Growth ◽  
Transmission Electron ◽  
Metal Organic ◽  
Composition Fluctuations ◽  
Organic Chemical Vapor Deposition

ABSTRACTTransmission electron microscopy (TEM) has been applied to analyze the thickness and the In-concentration of InGaN layers in GaN/InGaN/GaN- and AlGaN/InGaN/AlGaN-quantum well (QW) structures. Two series of samples were grown by metal organic chemical vapor deposition varying either only the growth duration for the InGaN QW or by changing the Al- concentration in the buffer layers at unaltered InGaN growth conditions. A rising average In- concentration from 6.5 to 15.4 % and a decreasing growth rate are observed with increasing growth duration. The increase of the Al-concentration in the buffer layers from 0 to 36 % strongly affects the In-incorporation during the InGaN growth, which decreases from 17.5 to 2.5 %. All samples are characterized by an inhomogeneous In-distribution containing In-rich agglomerates with a size of only a few nanometers and less pronounced composition fluctuations on a scale of 100 nm.

Dependence on MOCVD Growth Temperature of The Photoluminescence Properties of ZnSe, ZnTe, and ZnSe(1-x)Te(x) Alloys and ZnSe/ZnTe Superlattices

1992 ◽  
Vol 263 ◽  
Author(s):  
B.E. Ponga ◽  
J. Calas ◽  
M. Averous ◽  
T. Cloitre ◽  
O. Briot ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Physical Situation ◽  
Temperature Growth ◽  
Mocvd Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Ethyl Amine

ABSTRACTIt has been recently shown that high quality ZnSe and ZnTc filns can be grown on GaAs using low temperature growth techniques such as Metal-Organic Chemical Vapor Deposition ( MOCVD). All samples: ZnSe, ZnTe, ZnSc(l−x)Tc(x) epilayers and ZnSe/ZnTc superlattices were grown using a novel zinc precursor, the Tri-Ethyl-Amine Di-Methyl-Zinc, while we used the classical precursors H2Se and Di-Isopropyl-Tellurium for selenium and tellurium. Investigation of the photoluminescence (PL) properties of ZnSc and ZnTe single layers enabled us to optimize the growth conditions of these compounds. The crystal growth conditions for mixed alloys and superlattices were determined by direct comparison to the aspect of low-temperature PL features. Strong PL spectra were obtained from these materials, suggesting us that tellurium has the ability to behave like an iso-clectronic center. At low concentration of tellurium in ZnSe, an interesting physical situation is observed, which we have interpreted in terms of extrinsic exciton “self-trapping” mechanism.

Metal Organic Chemical Vapor Deposition of Zinc Oxide

2005 ◽  
Vol 892 ◽  
Author(s):  
William E. Fenwick ◽  
Vincent T. Woods ◽  
Ming Pan ◽  
Nola Li ◽  
Matthew H. Kane ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractThin films of ZnO were grown by metal organic chemical vapor deposition (MOCVD) in a vertical injection rotating disk reactor (RDR) system on sapphire substrates. Kinetics of ZnO growth by MOCVD were studied and an optimal growth window for a RDR tool was determined. Experimental growth conditions were chosen based on calculations of Reynolds Number (Re) and mixed convection parameter in order to select a growth window with stable gas flow and uniform heat transfer. Growth parameters were systemically varied within this window to determine the optimal growth conditions for this MOCVD tool and to study how these parameters affect film growth and quality. Properties of ZnNiO films grown by MOCVD were also studied to determine the effects of Ni incorporation on structural, optical, and magnetic properties.

MOCVD Growth of SiC Nanowires Aiming at the Control of their Shape

2007 ◽  
Vol 26-28 ◽  
pp. 657-660 ◽  
Author(s):  
S. Takao ◽  
Hideo Kohno ◽  
Seiji Takeda
Keyword(s):  
Chemical Vapor ◽  
Growth Conditions ◽  
High Yield ◽  
Organic Chemical ◽  
Ni Catalyst ◽  
Silicon Substrates ◽  
Sic Nanowires ◽  
Mocvd Growth ◽  
Transmission Electron ◽  
Metal Organic

We report the growth of silicon carbide (SiC) nanowires on silicon substrates by metal organic chemical vapor deposition (MOCVD) using dimethylvinyllsilane [CH2CHSi(CH3)Cl2] as a source gas and metal catalysts of Ni and Fe. Various growth conditions such as the growth temperature and the pressure of the source gas are examined to achieve high yield growth of SiC nanowires and to control their shape. No SiC nanowires were formed when using Fe. In contrast, by using Ni catalyst, numerous SiC nanowires of about 30 nm thick can be grown at the pressure of the source gas of 30 Pa at 800 °C. Their microstructure is revealed by scanning electron microscopy (SEM) and transmission electron microscope (TEM).

Structural and electronic properties of defects in semiconductors

1995 ◽  
Vol 53 ◽  
pp. 4-5
Author(s):  
J.L. Batstone
Keyword(s):  
Semiconductor Device ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Extended Defects ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Metal Organic ◽  
Film Substrate

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

MOCVD Copper Metallization for High Aspect Ratios TSV 3D Integration.

2018 ◽  
Vol 2018 (1) ◽  
pp. 000718-000727 ◽  
Author(s):  
Sabrina Fadloun ◽  
Dean Stephens ◽  
Patrice Gergaud ◽  
Elisabeth Blanquet ◽  
Thierry Mourier ◽  
...  
Keyword(s):  
Seed Layer ◽  
Copper Film ◽  
Chemical Vapor ◽  
Copper Metallization ◽  
Organic Chemical ◽  
Aspect Ratios ◽  
Organometallic Precursor ◽  
Strong Adhesion ◽  
Metal Organic ◽  
Copper Seed Layer

Abstract MOCVD (Metal-Organic Chemical Vapor Deposition) copper metallization was developed on 300mm wafers, to fulfil 3D Through-Silicon Via (TSV) interconnect requirements. Using a fluorine-free organometallic precursor, the bis(dimethylamino-2-propoxy)copper (II) Cu[OCHMeCH2NMe2]2 at low temperature deposition, we developed a high purity, low stress copper film with strong adhesion to a TiN barrier layer. Argon was used as a carrier gas and H2 and/or H2O as a co-reactant. This MOCVD technique offers good conformality observed with 10μm×120μmTSVs. The thin copper seed layer was successfully integrated on 300mm wafers. A new XRD protocol was developed to characterize the copper seed layer along the TSV sidewalls, revealed higher microstructure quality, lower stressed in the case of copper film deposited by CVD compared to those deposited by i-PVD.

Novel Design of MOCVD Reactor with Three Radial Inward Flows for Epitaxial Growth of GaN Thin Films

2011 ◽  
Vol 308-310 ◽  
pp. 1037-1040
Author(s):  
Liao Qiao Yang ◽  
Jian Zheng Hu ◽  
Zun Miao Chen ◽  
Jian Hua Zhang ◽  
Alan G. Li
Keyword(s):  
Gas Flow ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Operating Pressure ◽  
Axisymmetric Mode ◽  
Mocvd Reactor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
D Model

In this paper, a novel super large metal organic chemical vapor deposition (MOCVD) reactor with three inlets located on the periphery of reactor was proposed and numerical evaluation of growth conditions for GaN thin film was characterized. In this design, the converging effects of gas flow in the radial direction could counterbalance the dissipation of metal organics source. CFD was used for the mathematical solution of the fluid flow, temperature and concentration fields. A 2-D model utilizing axisymmetric mode to simulate the gas flow in a MOCVD has been developed. The growth of GaN films using TMGa as a precursor, hydrogen as carrier gas was investigated. The effects of flow rates, mass fraction of various species, operating pressure, and gravity were analyzed and discussed, respectively. The numerical simulation results show all the fields distributions were in an acceptable range.

Analysis of the Physical and Chemical Factors Determining Compositional Variations in the MOCVD Growth of Indium Gallium Arsenide

1990 ◽  
Vol 204 ◽  
Author(s):  
Erik O. Einset ◽  
Klavs F. Jensen ◽  
Thomas F. Kuech
Keyword(s):  
Transport Model ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Mocvd Growth ◽  
Metal Organic ◽  
Compositional Variations ◽  
Wall Depletion ◽  
Physical And Chemical

ABSTRACTWe present an analysis of compositional variations in the growth of the compound semiconductor, InxGal-xAs, by metal organic chemical vapor deposition (MOCVD). A three dimensional transport model for fluid flow, heat, and mass transfer is solved using the finite element method. The Delta Lattice Parameter (DLP) model is used to describe the thermodynamics of the solid solution, and the Hertz-Langmuir equation is used to calculate the evaporation rate of indium from the growing crystal. Wall depletion is incorporated by allowing for explicit wall deposition of In vapor throughout the reactor.Comparison of model predictions with experimental observations by MOCVD of InGaAs in a horizontal reactor suggests that transport phenomena lead to composition variations across the substrate, and that solution thermodynamics have little effect on the InAs incorporation rate at a given deposition temperature. However, thermodynamic factors appear to influence the change in indium incorporation with growth temperature.

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