High Conductive a-Si:H/a-SiC:H:F Super Lattice Prepared by a Chemically Controlled Method

1987 ◽  
Vol 95 ◽  
Author(s):  
H. Koinuma ◽  
M. Kawasaki ◽  
K. Fueki
Keyword(s):  
Electrical Properties ◽  
Barrier Layer ◽  
Layered Structure ◽  
Gas Mixture ◽  
Optical And Electrical Properties ◽  
Pulsed Plasma ◽  
Silicon Source ◽  
Cvd Method ◽  
The Difference

AbstractAmorphous super lattices composed of a-Si:H and a-SiC:H:F layers were continuously prepared from a gas miture of CF4 and either SiH4 or Si2 H6 by the pulsed plasma and photo (PP&P) CVD method. The method utilizes the difference in photochemical reactivity of the source gases for the formation of layered structure. The layered films prepared by using Si2H6 as silicon source under the condition that they had optical gaps up to 2.0 eV were found to show photoconductivities higher not only than those of a-SiC:H:F films prepared from the same gas mixture by the continuous plasma and photo hybrid CVD but also than those of a-Si:H films by the photo CVD. From the comparison of optical and electrical properties of super lattices prepared, the photoconductivity of the films is suggested to be primarily dependent on the quality of barrier layer rather than on the quality of well layer.

Optical and Electrical Properties of Cd Te Laser-Synthetized

1982 ◽  
Vol 13 ◽  
Author(s):  
L. Baufay ◽  
A. Pigeolet ◽  
R. Andrew ◽  
L.D. Laude
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Electrical Characterization ◽  
Point Of View ◽  
Optical And Electrical Properties ◽  
Impurity States ◽  
Absorption Measurements ◽  
Forbidden Gap

ABSTRACTOptical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.

Optical and electrical properties of new carrier barrier layer structure of II–VI compounds

1996 ◽  
Vol 159 (1-4) ◽  
pp. 493-497 ◽  
Author(s):  
N. Teraguchi ◽  
H. Mouri ◽  
Y. Tomomura ◽  
A. Suzuki ◽  
J. Rorison ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Layer ◽  
Layer Structure ◽  
Optical And Electrical Properties

Nitrogen Effects on Optical and Electrical Properties of Amorphous Carbon

2010 ◽  
Vol 636-637 ◽  
pp. 423-429 ◽  
Author(s):  
M. Fathallah ◽  
N. Alassimi ◽  
N. Alzayed ◽  
R. Gharbi
Keyword(s):  
Electrical Properties ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Gas Mixture ◽  
Optical And Electrical Properties ◽  
Photoluminescence Spectra ◽  
Graphite Target ◽  
Triple Bonds ◽  
C And N ◽  
Amorphous Carbon Nitride

Optical and electrical properties amorphous carbon nitride (a-CN) has been investigated on films deposited by reactive R.F. sputtering source with a graphite target. The amorphous carbon nitride samples were prepared under a gas mixture of nitrogen (N2) and /or Argon (Ar).The optical transitions are governed by the  and * electronic state distributions, related to sp2- and sp1-hybridized C and N atoms. Specific lonepair electronic states arise from groups (CN) with sp1-hybridized C atoms, which may form C≡N triple bonds or —N=C=N— longer chains. Photoluminescence spectra show a maximum around 650 nm. Two conduction regimes at high and low temperature are found in a-CN samples. The corresponding activation energies decrease with the increase of target voltage.

Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation

2013 ◽  
Vol 634-638 ◽  
pp. 2458-2461
Author(s):  
Jing Lv
Keyword(s):  
Electrical Properties ◽  
Thermal Evaporation ◽  
Optical And Electrical Properties ◽  
Structure And Properties ◽  
Structure And Morphology ◽  
The Difference ◽  
Quartz Substrates ◽  
Deposited Film

Al films were prepared on quartz substrates by thermal evaporation. The effects of annealing in air on structure and optical and electrical properties have been studied. It is found that the annealing in air will affect on structure and morphology of the films, which results in the difference in the optical and electrical properties. The as-deposited film is amorphous, the films annealed at 200 and 400oC are polycrystalline. After annealed at 600oC, the film was oxidized and changed to porous γ-Al2O3. The film annealed at 200 oC has the maximum reflectance and at 400 oC has the minimum resistivity in all samples. While for the film annealed at 600 oC, the resistivity is close to be infinite, the reflectance is the minimum at wavelength ranging from 400 to 800 nm in all the samples.

INDIUM SELENIDE THIN FILMS BY LASER IRRADIATION OF In/Se LAYERED STRUCTURE

2013 ◽  
Vol 20 (06) ◽  
pp. 1350058 ◽  
Author(s):  
R. E. ORNELAS-ACOSTA ◽  
S. SHAJI ◽  
D. AVELLANEDA ◽  
G. A. CASTILLO ◽  
T. K. DAS ROY ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Irradiation ◽  
Layered Structure ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Structure Morphology ◽  
532 Nm

In this work, we report the formation of In 6 Se 7 thin films by laser irradiation of In / Se layered structure. Indium layer was deposited on glass substrates by thermal evaporation on which selenium thin film was grown by chemical bath deposition from an aqueous solution containing 10 ml of sodium selenosulphate (0.1 M), 1.0 ml acetic acid (25%) and 70 ml distilled water during 5 min. The In / Se coated glass substrates were irradiated using a 532 nm continuous laser for 3–5 min. Structure, morphology, optical and electrical properties of the irradiated thin films were analyzed using various techniques. X-ray diffraction analysis showed that the irradiated thin films were In 6 Se 7 of monoclinic structure. X-ray photoelectron spectroscopic study on the laser irradiated samples provided uniform relative composition of In and Se in the thin films formed after laser irradiation. The morphology, optical and electrical properties of the irradiated samples were investigated. The optical band gap of the In 6 Se 7 thin films was 2.2 eV and also, the thin films were photoconductive.

scholarly journals Improvement of the Efficiency of Perennial Seed Mixtures Separation on a Drum Vibro Electric Separator

2018 ◽  
Vol 66 (5) ◽  
pp. 1157-1164
Author(s):  
Stepan Kovalyshyn ◽  
Oleksanda Kovalyshyn
Keyword(s):  
Electrical Properties ◽  
Electric Field ◽  
Corona Discharge ◽  
Oscillation Frequency ◽  
Perennial Grasses ◽  
High Quality ◽  
Original Mixture ◽  
The Difference ◽  
Seed Mixtures

Separation of seed mixtures plays a very important role in obtaining high‑quality seeds, which is characterized by the absence of hard‑to‑separate admixtures of weeds. The aim of the work was to improve the quality of seed mixtures of perennial grasses due to the use of the drum separator in the process of their additional cleaning. The conducted studies determined the basic geometric dimensions of the components of seed mixtures of perennial grasses and their coefficients of friction on various materials. The difference in their values was insignificant, as a result of which it was found that separating by these indicators is inappropriate. We can intensify the separation of the studied mixtures by using a drum vibro electric separator, where the separation takes place in a combination of frictional and electrical properties of the components. The main adjustable parameters of vibro electric separation established by previous studies were: the drum speed f = 8 rpn; the electric field of corona discharge E = 3.0 kV/cm; the oscillation frequency of the drum f1 = 50 Hz; drum amplitude A = 1,6 mm. With such parameters of separation we achieved the purity of the seed of the clover and the timothy grass in the range of 97…98 %, which, respectively, for 22.5 % and 17.5 % exceeds the purity of the original mixture.

Study on TlBr Single Crystal Growth Using Improved Electro Dynamic Gradient Method

2011 ◽  
Vol 415-417 ◽  
pp. 1979-1982
Author(s):  
Zhi Ping Zheng ◽  
Jing Wang ◽  
Lin Quan ◽  
Shu Ping Gong ◽  
Dong Xiang Zhou
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Electrical Properties ◽  
Temperature Gradient ◽  
Growth Conditions ◽  
Single Crystal Growth ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray

Electro Dynamic Gradient (EDG) method was utilized for TlBr crystal growth in this paper. The influence of crystal growth conditions such as temperature gradient and growth rate on optical and electrical properties of grown TlBr crystals was investigated. The quality of TlBr crystals was characterized by infrared (IR) transmittance spectrum, X-ray diffraction, and I-V measurements.

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