scholarly journals The Influence of Sodium on the Characterization of Cu(In,Ga)Se2 Thin Films Prepared by Three-Stage Deposition Process

2018 ◽  
Vol 6 (2) ◽  
Author(s):  
Jseng YY ◽  
Chao CJ ◽  
Sung HH ◽  
Chen TC
Keyword(s):  
Thin Films ◽  
Deposition Process

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

TI-X Alloy Composition Modulated Layered Structures

1986 ◽  
Vol 77 ◽  
Author(s):  
A. F. Jankowski ◽  
R. O. Adams ◽  
L. Williams
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Physical Vapor Deposition ◽  
Deposition Process ◽  
Beta Phase ◽  
Layered Structures ◽  
X Ray Diffraction ◽  
Alumina Crucible ◽  
Alloy Series

ABSTRACTThe binary alloy series of Ti-X metallic, composition modulated layered structures has been fabricated via magnetron sputtering. The Ti-X systems (where X is Ta, Mo, or V) explored are exemplary of solid solution systems, such as the supermodulus systems of Cu-Ni, Ag-Pd, Au-Ni, and Cu-Pd (which all feature fee crystalline compatibility). In the present case, the beta-phase of Ti sought in these Ti-X systems suggests bec crystalline compatibility, with interlayer misfit strains not exceeding 10%.The Ti-X series examined, matches elements of high and low atomic number. (Z of Ti, V, Mo, and Ta are 22, 23, 42, and 73, respectively.) Difficulties which arise in a conventional tungsten basket - alumina crucible physical vapor deposition process, i.e. obtaining thr vaporization temperatures for Ti, V, Mo and Ta of 1235, 1332, 1822, and 2240 °C at 130 mPa, respectively, are overcome by magnetron sputtering. Thin films produced by alternate deposition of Ti with V, Mo, or Ta, are desired with individually unique, regular repeating layer thicknesses which range from 1.5 to 15 nm.An initial characterization of the Ti-X composition modulated alloys has been conducted using X-ray diffraction. The pole figure constructions of the various composition wavelengths give a qualitative look at the strain accomodation within the thin films and possible manifestations in mechanical properties.

Effect of Oxygen Flow Rate on the Memristive Behavior of Reactively Sputtered TiO2 Thin Films

2014 ◽  
Vol 1024 ◽  
pp. 64-67 ◽  
Author(s):  
Nur Syahirah Kamarozaman ◽  
Muhamad Uzair Shamsul ◽  
Sukreen Hana Herman ◽  
Wan Fazlida Hanim Abdullah
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Switching Behavior ◽  
Memristive Behavior ◽  
Effect Of Oxygen

The paper presents the memristive behavior of sputtered titania thin films on ITO substrate. Titania thin films were deposited by RF magnetron sputtering method while varying the oxygen flow rate of (O2/ (O2 + Ar) x100 = 10, 20 and 30 %) during deposition process. The effect of oxygen flow rate to the structural properties was studied including the physical thickness, and also the effect towards switching behavior. It was found that sample deposited at 20 % oxygen flow rate gave better memristive behavior compared to other samples, with larger ROFF/RON ratio of 9. The characterization of memristive behavior includes the effect of electroforming process and successive of I-V measurements are discussed.

scholarly journals Preparation and Characterization of NbxOy Thin Films: A Review

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1246
Author(s):  
Nwanna Charles Emeka ◽  
Patrick Ehi Imoisili ◽  
Tien-Chien Jen
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Deposition Process ◽  
Optical Systems ◽  
Electrochromic Devices ◽  
Comprehensive Properties ◽  
Direct Band ◽  
Film Characteristics ◽  
The Impact

Niobium oxides (NbO, NbO2, Nb2O5), being a versatile material has achieved tremendous popularity to be used in a number of applications because of its outstanding electrical, mechanical, chemical, and magnetic properties. NbxOy films possess a direct band gap within the ranges of 3.2–4.0 eV, with these films having utility in different applications which include; optical systems, stainless steel, ceramics, solar cells, electrochromic devices, capacitor dielectrics, catalysts, sensors, and architectural requirements. With the purpose of fulfilling the requirements of a vast variety of the named applications, thin films having comprehensive properties span described by film composition, morphology, structural properties, and thickness are needed. The theory, alongside the research status of the different fabrication techniques of NbxOy thin films are reported in this work. The impact of fabrication procedures on the thin film characteristics which include; film thickness, surface quality, optical properties, interface properties, film growth, and crystal phase is explored with emphases on the distinct deposition process applied, are also described and discussed.

scholarly journals Compositionally-Driven Formation Mechanism of Hierarchical Morphologies in Co-Deposited Immiscible Alloy Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2635
Author(s):  
Max Powers ◽  
James A. Stewart ◽  
Rémi Dingreville ◽  
Benjamin K. Derby ◽  
Amit Misra
Keyword(s):  
Thin Films ◽  
Formation Mechanism ◽  
Threshold Value ◽  
Deposition Process ◽  
Immiscible Alloy ◽  
Multiple Length Scales ◽  
Constituent Element ◽  
The Difference ◽  
Microscopy Characterization

Co-deposited, immiscible alloy systems form hierarchical microstructures under specific deposition conditions that accentuate the difference in constituent element mobility. The mechanism leading to the formation of these unique hierarchical morphologies during the deposition process is difficult to identify, since the characterization of these microstructures is typically carried out post-deposition. We employ phase-field modeling to study the evolution of microstructures during deposition combined with microscopy characterization of experimentally deposited thin films to reveal the origin of the formation mechanism of hierarchical morphologies in co-deposited, immiscible alloy thin films. Our results trace this back to the significant influence of a local compositional driving force that occurs near the surface of the growing thin film. We show that local variations in the concentration of the vapor phase near the surface, resulting in nuclei (i.e., a cluster of atoms) on the film’s surface with an inhomogeneous composition, can trigger the simultaneous evolution of multiple concentration modulations across multiple length scales, leading to hierarchical morphologies. We show that locally, the concentration must be above a certain threshold value in order to generate distinct hierarchical morphologies in a single domain.

Chemical Solution Deposition Process and Characterization of Li and Ti Doped NiO Thin Films

2005 ◽  
pp. 1595-1598
Author(s):  
Bo Ping Zhang ◽  
Jing Feng Li ◽  
Li Min Zhang ◽  
Jun Zeng ◽  
Yan Dong
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Deposition Process ◽  
Chemical Solution ◽  
Solution Deposition

Fabrication and Characterization of Ba(Ti,Zr)O3 Thin Films Through the Chemical Solution Deposition Process

2004 ◽  
Vol 64 (1) ◽  
pp. 227-236 ◽  
Author(s):  
KIYOTAKA TANAKA ◽  
KAZUYUKI SUZUKI ◽  
DESHENG FU ◽  
KAORI NISHIZAWA ◽  
TAKESHI MIKI ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Deposition Process ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Fabrication And Characterization

Synthesis and Characterization of Bi2Mn0.1V0.9O5.35-δ Thin Films

2011 ◽  
Vol 480-481 ◽  
pp. 639-643
Author(s):  
Ming Guo ◽  
Lan Ying Wu ◽  
Chang Xin Liu ◽  
Song Hua Zhou
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Complex Impedance ◽  
Low Frequency ◽  
Deposition Process ◽  
Debye Model ◽  
Homogeneous Distribution ◽  
Solution Deposition ◽  
Complex Impedance Spectra

The Bi2Mn0.1V0.9O5.35-δ (BIMNVOX.10) thin films have been successfully deposited on the LaNiO3(LNO)/Si (100) substrates by chemical solution deposition process. The phases, morphology and electrical properties of samples have been studied. The BIMNVOX.10 films show a (00l)-preferred orientation and have a homogeneous distribution of grains. A low frequency dielectric dispersion observed in the films may be originated from the short distant diffusion of oxygen vacancies. The Cole-Cole plots of dielectric constant for the BIMNVOX.10 films appear semicircular arc with the center off the x-axis and deviate from the ideal mono-dispersive Debye model. The frequency dependent of ac conductivity for BIMNVOX.10 films follows the Joscher’s power law, mainly contributed to the grain resistivity and predicts the nature of an oxygen vacancies conduction process. The complex impedance spectra reveal that electrical process arises due to contribution from the grain interior and grain boundary effects.

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