scholarly journals Microwave cyclotron protective devices for radar receivers

2021 ◽  
Vol 13 (3) ◽  
pp. 297-302
Author(s):  
Sergey V. Bykovskiy ◽  
◽  
◽  
Keyword(s):  
Recovery Time ◽  
Noise Figure ◽  
Signal Transmission ◽  
Input Pulse ◽  
Input Power ◽  
Low Noise ◽  
Output Frequency ◽  
Protective Devices ◽  
Upper Limit ◽  
Protection Mode

Brief overview of the latest developments of microwave cyclotron protective devices, their functioning and parameters is given. It is noted that these devices have a number of important advantages over other types of protective devices: they are autonomous, provide no peak of microwave power leaking to the output, frequency filtering and low noise figure (0.7-1.2 dB). The upper limit of the linearity of cyclotron protective devices in the signal transmission mode when the transmission coefficient is compressed by 1 dB is ~ 1 mW. The devices can operate with an input pulse power of up to 10 kW or more, while the attenuation of the input power in the protection mode is more than 60-80 dB. The recovery time of parameters after the end of a powerful input pulse is 10-20 ns. For devices of the 3-cm wavelength range, experimental data are given on the recovery time, the upper limit of linearity, attenuation of the input power in the protection mode, and filtration characteristics.

scholarly journals GaN-based single-chip frontend for next-generation X-band AESA systems

2018 ◽  
Vol 10 (5-6) ◽  
pp. 660-665 ◽  
Author(s):  
Patrick Schuh ◽  
Hardy Sledzik ◽  
Rolf Reber
Keyword(s):  
Generation X ◽  
Noise Figure ◽  
Power Level ◽  
Input Power ◽  
Low Noise ◽  
Next Generation ◽  
Frequency Range ◽  
Single Chip ◽  
Large Signal ◽  
Integration Density

AbstractA next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside aT/Rmodule. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chipT/Rmodule frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.

A 79GHz Adaptive Gain Low Noise Amplifier for Radar Receivers

2018 ◽  
Vol 7 (2.24) ◽  
pp. 227
Author(s):  
J Manjula ◽  
A Ruhan Bevi
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Cmos Technology ◽  
Input Power ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Center Frequency ◽  
Common Source ◽  
Adaptive Biasing ◽  
Noise Amplifier

This paper presents an Adaptive Gain 79GHz Low Noise Amplifier (LNA) suitable for Radars applications. The circuit schematic is a two stage LNA consists of Differential cascode configuration followed by a simple common source amplifier with an Adaptive Biasing (ADB) circuit. Adaptive biasing is a three- stage common source amplifier to decrease output voltage as input power increases. The circuit is simulated in 180nm CMOS technology and the simulation results have proved that the circuit operates at the center frequency 79GHz with adaptive biasing for adaptive gain. The gain analysis shows a decrease of 35-30dB with an increase in input power -50 to 0 dB. At 79GHz the circuit has achieved the input reflection coefficient (S11) of -24.7dB, reverse isolation (S12) of -3 dB, forward transmission coefficient (S21) of -2.97dB and output reflection coefficient (S22) of -5.62 dB with the reduced noise figure of 0.9 dB and a power consumption of 236 mW.  

scholarly journals Design and Development of Monolithic Microwave Integrated Amplifiers and Coupling Circuits for Telecommunication Systems Applications

2002 ◽  
Vol 25 (1) ◽  
pp. 1-22 ◽  
Author(s):  
R. Makri ◽  
M. Gargalakos ◽  
N. K. Uzunoglu
Keyword(s):  
Fiber Optics ◽  
Noise Figure ◽  
Input Power ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Single Chip ◽  
Telecommunication Systems ◽  
Noise Amplifier ◽  
Shunt Capacitors ◽  
Total Gain

Recent advances in printed circuit and packaging technology of microwave and millimeter wave circuits result to the increasing use of MMICs in telecommunication systems. At Microwave and Fiber Optics Lab of NTUA several designs of various MMICs were conducted using the HP Eesof CAD Tool and FET and HEMT models of F20 and H40 GaAs foundry process of GEC Marconi. The designed MMICs are constructed in Europractice Organization while on-wafer probe measurements are performed in the Lab. In that framework, MMIC technologies are employed in the design of power and low noise amplifiers and couplers to be used for mobile and wireless communications as well as remote sensing and radar applications. A medium power linear FET amplifier has been designed with combining techniques on a single chip. The circuit operates at 14.4–15.2 GHz with an input power of−15dB m, a 36 dB total gain, while the input and output VSWR is less than 1.6. Due to high cost of MMIC fabrication only the first subunit was manufactured and tests verified the simulation results. Additionally, novel techniques have been used for the design of two coupling networks at 10 GHz in order to minimize the area occupied. A meander-kind design as well as shunt capacitors were implemented for a90°quadrature coupler and a Wilkinson one in order to reduce size. Finally, a two stages low noise amplifier was designed with the use of H40 GaAs process in order the differences between the relevant designs to be explored. The key specifications for this MMIC LNA include operation at 10 GHz with a total gain of 17 dB while the noise figure is less than 1.5 dB.

Design low noise figure phemt lna using inductive drain feedback for WIMAX application

2014 ◽  
Author(s):  
K. Pongot ◽  
J.S. Hamidon ◽  
A. Ahmad ◽  
M.K. Suaidi ◽  
A.H. Hamidon ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

scholarly journals A compact low-noise frontend for interleaved Rx/Tx arrays at K-/Ka-Band

2021 ◽  
pp. 1-7
Author(s):  
Anton Sieganschin ◽  
Thomas Jaschke ◽  
Arne F. Jacob
Keyword(s):  
Insertion Loss ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Low Noise ◽  
Single Band ◽  
Circuit Board ◽  
Dual Band ◽  
Ka Band ◽  
Compression Properties ◽  
The Individual

Abstract This contribution deals with a frontend for interleaved receive (Rx)-/transmit (Tx)-integrated phased arrays at K-/Ka-band. The circuit is realized in printed circuit board technology and feeds dual-band Rx/Tx- and single-band Tx-antenna elements. The dual-band element feed is composed of a substrate-integrated waveguide (SIW) diplexer with low insertion loss, a low-noise amplifier (LNA), a bandpass filter, and several passive transitions. The compression properties of the LNA are identified through two-tone measurements. The results dictate the maximum allowable output power of the power amplifier. The single band feed consists of a SIW with several transitions. Simulation and measurement results of the individual components are presented. The frontend is assembled and measured. It exhibits an Rx noise figure of 2 dB, a Tx insertion loss of ~ 2.9 dB, and an Rx/Tx-isolation of 70 dB. The setup represents the unit cell of a full array and thus complies with the required half-wave spacing at both Rx and Tx.

Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure

2007 ◽  
Vol 17 (7) ◽  
pp. 546-548 ◽  
Author(s):  
T. Gaier ◽  
L. Samoska ◽  
A. Fung ◽  
W. R. Deal ◽  
V. Radisic ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier

scholarly journals A 5.7GHz low noise figure ultra high gain CMOS LNA with inter stage technique

2010 ◽  
Vol 7 (23) ◽  
pp. 1686-1693 ◽  
Author(s):  
Ehsan Kargaran ◽  
Hojat Khosrowjerdi ◽  
Karim Ghaffarzadegan ◽  
Hooman Nabovati
Keyword(s):  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Cmos Lna

scholarly journals Active Balun with Center-Tapped Inductor and Double-Balanced Gilbert Mixer for GNSS Applications

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1351
Author(s):  
Daniel Pietron ◽  
Tomasz Borejko ◽  
Witold Adam Pleskacz
Keyword(s):  
Phase Shift ◽  
Noise Figure ◽  
Low Noise ◽  
Global Navigation Satellite Systems ◽  
Cmos Process ◽  
Differential Signal ◽  
Satellite Systems ◽  
Active Balun ◽  
Noise Amplifier ◽  
Global Navigation Satellite

A new 1.575 GHz active balun with a classic double-balanced Gilbert mixer for global navigation satellite systems is proposed herein. A simple, low-noise amplifier architecture is used with a center-tapped inductor to generate a differential signal equal in amplitude and shifted in phase by 180°. The main advantage of the proposed circuit is that the phase shift between the outputs is always equal to 180°, with an accuracy of ±5°, and the gain difference between the balun outputs does not change by more than 1.5 dB. This phase shift and gain difference between the outputs are also preserved for all process corners, as well as temperature and voltage supply variations. In the balun design, a band calibration system based on a switchable capacitor bank is proposed. The balun and mixer were designed with a 110 nm CMOS process, consuming only a 2.24 mA current from a 1.5 V supply. The measured noise figure and conversion gain of the balun and mixer were, respectively, NF = 7.7 dB and GC = 25.8 dB in the band of interest.

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