scholarly journals FEI Helios NanoLab 460F1 FIB-SEM

2016 ◽  
Vol 2 ◽  
Author(s):  
Max Kruth ◽  
Doris Meertens ◽  
Karsten Tillmann
Keyword(s):  
High Performance ◽  
Process Development ◽  
Atom Probe ◽  
Inert Gas ◽  
Gas Transfer ◽  
Contrast Imaging ◽  
Dual Beam ◽  
Transmission Electron ◽  
Material Contrast ◽  
Technical Specifications

The FEI Helios NanoLab 460F1 is a highly advanced dual beam FIB-SEM platform for imaging and analytical measurements, transmission electron microscopy (TEM) sample and atom probe (AP) needle preparation, process development and process control. For these purposes, the FEI Helios NanoLab 460F1 combines an ElstarTM UC technology electron column for high-resolution and high material contrast imaging with the high-performance TomahawkTM ion column for fast and precise sample preparation. The FEI Helios NanoLab 460F1 is additionally equipped with the MultiChemTM gas delivery system, an EasyLiftTM nanomanipulator, a cooling trap, an inert gas transfer (IGT) holder loadlock, a quick loader, a FlipStage 3TM, an EDX-System and an STEM III detector. This instrument is one of the few dual beam systems which combine an IGT holder loadlock with a FlipStage 3+TM EasyLiftTM nanomanipulator. Typical examples of use and technical specifications for the instrument are given below.

scholarly journals Unconventional magnetization textures and domain-wall pinning in Sm–Co magnets

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Leonardo Pierobon ◽  
András Kovács ◽  
Robin E. Schäublin ◽  
Stephan S. A. Gerstl ◽  
Jan Caron ◽  
...  
Keyword(s):  
Domain Wall ◽  
High Performance ◽  
Domain Walls ◽  
Atom Probe ◽  
Electron Holography ◽  
Micromagnetic Simulations ◽  
Transmission Electron ◽  
Domain Wall Pinning ◽  
Weak Points ◽  
Magnetic Hardness

AbstractSome of the best-performing high-temperature magnets are Sm–Co-based alloys with a microstructure that comprises an $$\hbox {Sm}_2\hbox {Co}_{17}$$ Sm 2 Co 17 matrix and magnetically hard $$\hbox {SmCo}_5$$ SmCo 5 cell walls. This generates a dense domain-wall-pinning network that endows the material with remarkable magnetic hardness. A precise understanding of the coupling between magnetism and microstructure is essential for enhancing the performance of Sm–Co magnets, but experiments and theory have not yet converged to a unified model. Here, transmission electron microscopy, atom probe tomography, and nanometer-resolution off-axis electron holography have been combined with micromagnetic simulations to reveal that the magnetization state in Sm–Co magnets results from curling instabilities and domain-wall pinning effects at the intersections of phases with different magnetic hardness. Additionally, this study has found that topologically non-trivial magnetic domains separated by a complex network of domain walls play a key role in the magnetic state by acting as nucleation sites for magnetization reversal. These findings reveal previously hidden aspects of magnetism in Sm–Co magnets and, by identifying weak points in the microstructure, provide guidelines for improving these high-performance magnetic materials.

scholarly journals FEI Helios NanoLab 400S FIB-SEM

2016 ◽  
Vol 2 ◽  
Author(s):  
Doris Meertens ◽  
Max Kruth ◽  
Karsten Tillmann
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Sample Preparation ◽  
High Performance ◽  
Process Development ◽  
Ion Beam ◽  
High Deposition Rate ◽  
Contrast Imaging ◽  
X Ray ◽  
Sem Imaging

The FEI Helios NanoLab400S FIB-SEM is one of the world's most advanced DualBeamTM focused ion beam (FIB) platforms for transmission electron microscopy (TEM) sample preparation, scanning electron microscopy (SEM) imaging and analysis in semiconductor failure analysis, process development and process control. The FEI Helios NanoLab400S FIB-SEM combines an ElstarTM electron column for high-resolution and high-contrast imaging with a high-performance SidewinderM ion column for fast and precise cross sectioning. The FEI Helios NanoLab M 400S is optimised for high throughput high-resolution S/TEM sample preparation, SEM imaging and energy dispersive X-ray analysis. Its exclusive FlipStageTM and in situ STEM detector can flip from sample preparation to STEM imaging in seconds without breaking vacuum or exposing the sample to the environment. Platinum gas chemistry is the preferred metal deposition when a high deposition rate and precision of the deposition are required. Carbon deposition can be chosen as well. The system additionally allows for spatially resolved compositional analysis using the attached EDAX Genesis XM 4i X-ray microanalysis system.

Prospects for convergent beam electron diffraction with a 200kV cold field-emission transmission electron microscope

1991 ◽  
Vol 49 ◽  
pp. 466-467
Author(s):  
J W Steeds ◽  
R Vincent
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Small Diameter ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Medium Voltage ◽  
Transmission Electron ◽  
Good Crystallinity ◽  
Special Modification ◽  
Convergent Beam

We review the analytical powers which will become more widely available as medium voltage (200-300kV) TEMs with facilities for CBED on a nanometre scale come onto the market. Of course, high performance cold field emission STEMs have now been in operation for about twenty years, but it is only in relatively few laboratories that special modification has permitted the performance of CBED experiments. Most notable amongst these pioneering projects is the work in Arizona by Cowley and Spence and, more recently, that in Cambridge by Rodenburg and McMullan.There are a large number of potential advantages of a high intensity, small diameter, focussed probe. We discuss first the advantages for probes larger than the projected unit cell of the crystal under investigation. In this situation we are able to perform CBED on local regions of good crystallinity. Zone axis patterns often contain information which is very sensitive to thickness changes as small as 5nm. In conventional CBED, with a lOnm source, it is very likely that the information will be degraded by thickness averaging within the illuminated area.

High-resolution x-ray imaging of small copper-rich precipitates in steels

1988 ◽  
Vol 46 ◽  
pp. 528-529
Author(s):  
J. R. Michael ◽  
K. A. Taylor
Keyword(s):  
Electron Microscopy ◽  
Thermomechanical Processing ◽  
Atom Probe ◽  
Ferrite Matrix ◽  
Scanning Transmission Electron Microscope ◽  
Probe Field ◽  
X Ray ◽  
Subsequent Transformation ◽  
Transmission Electron ◽  
Scanning Transmission

Although copper is considered an incidental or trace element in many commercial steels, some grades contain up to 1-2 wt.% Cu for precipitation strengthening. Previous electron microscopy and atom-probe/field-ion microscopy (AP/FIM) studies indicate that the precipitation of copper from ferrite proceeds with the formation of Cu-rich bcc zones and the subsequent transformation of these zones to fcc copper particles. However, the similarity between the atomic scattering amplitudes for iron and copper and the small misfit between between Cu-rich particles and the ferrite matrix preclude the detection of small (<5 nm) Cu-rich particles by conventional transmission electron microscopy; such particles have been imaged directly only by FIM. Here results are presented whereby the Cu Kα x-ray signal was used in a dedicated scanning transmission electron microscope (STEM) to image small Cu-rich particles in a steel. The capability to detect these small particles is expected to be helpful in understanding the behavior of copper in steels during thermomechanical processing and heat treatment.

Advanced TEM sample preparation techniques for submicron Si devices

1995 ◽  
Vol 53 ◽  
pp. 516-517 ◽  
Author(s):  
P. B. Basham ◽  
H. L. Tsai
Keyword(s):  
Sample Preparation ◽  
Process Development ◽  
Light Transmission ◽  
Specific Area ◽  
Turnaround Time ◽  
Small Hole ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Polished Side ◽  
Preparation Techniques

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.

Strain analysis with nanometer resolution using a conventional transmission electron microsopy technique: electron diffraction contrast imaging revisited

1995 ◽  
Vol 53 ◽  
pp. 168-169
Author(s):  
Koenraad G F Janssens ◽  
Omer Van der Biest ◽  
Jan Vanhellemont ◽  
Herman E Maes ◽  
Robert Hull
Keyword(s):  
Electron Diffraction ◽  
Strain Field ◽  
Elastic Strain ◽  
Strain Analysis ◽  
Local Strain ◽  
Contrast Imaging ◽  
Strain Characterization ◽  
Physical Mechanisms ◽  
Diffraction Contrast ◽  
Transmission Electron

There is a growing need for elastic strain characterization techniques with submicrometer resolution in several engineering technologies. In advanced material science and engineering the quantitative knowledge of elastic strain, e.g. at small particles or fibers in reinforced composite materials, can lead to a better understanding of the underlying physical mechanisms and thus to an optimization of material production processes. In advanced semiconductor processing and technology, the current size of micro-electronic devices requires an increasing effort in the analysis and characterization of localized strain. More than 30 years have passed since electron diffraction contrast imaging (EDCI) was used for the first time to analyse the local strain field in and around small coherent precipitates1. In later stages the same technique was used to identify straight dislocations by simulating the EDCI contrast resulting from the strain field of a dislocation and comparing it with experimental observations. Since then the technique was developed further by a small number of researchers, most of whom programmed their own dedicated algorithms to solve the problem of EDCI image simulation for the particular problem they were studying at the time.

Ordering in Ni4Mo by TEM and APFIM

1987 ◽  
Vol 45 ◽  
pp. 214-215
Author(s):  
E.A. Kenik ◽  
T.A. Zagula ◽  
M.K. Miller ◽  
J. Bentley
Keyword(s):  
Electron Irradiation ◽  
Low Temperatures ◽  
Short Range ◽  
Atom Probe ◽  
Range Order ◽  
Considerable Time ◽  
Probe Field ◽  
Disordered Phase ◽  
Transmission Electron ◽  
Diffraction Patterns

The state of long-range order (LRO) and short-range order (SRO) in Ni4Mo has been a topic of interest for a considerable time (see Brooks et al.). The SRO is often referred to as 1½0 order from the apparent position of the diffuse maxima in diffraction patterns, which differs from the positions of the LRO (D1a) structure. Various studies have shown that a fully disordered state cannot be retained by quenching, as the atomic arrangements responsible for the 1½0 maxima are present at temperatures above the critical ordering temperature for LRO. Over 20 studies have attempted to identify the atomic arrangements associated with this state of order. A variety of models have been proposed, but no consensus has been reached. It has also been shown that 1 MeV electron irradiation at low temperatures (∼100 K) can produce the disordered phase in Ni4Mo. Transmission electron microscopy (TEM), atom probe field ion microscopy (APFIM), and electron irradiation disordering have been applied in the current study to further the understanding of the ordering processes in Ni4Mo.

Secondary electron imaging of YBa2Cu3O7-x high-Tc superconductors in Scanning Transmission Electron Microscope

1989 ◽  
Vol 47 ◽  
pp. 684-685
Author(s):  
D. R. Liu ◽  
D. B. Williams
Keyword(s):  
Electron Microscope ◽  
Secondary Electron ◽  
Scanning Transmission Electron Microscope ◽  
Superconducting Phase ◽  
Contrast Imaging ◽  
High Tc ◽  
Bright Contrast ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Imaging

The secondary electron imaging technique in a scanning electron microscope (SEM) has been used first by Millman et al. in 1987 to distinguish between the superconducting phase and the non-superconducting phase of the YBa2Cu3O7-x superconductors. They observed that, if the sample was cooled down below the transition temperature Tc and imaged with secondary electrons, some regions in the image would show dark contrast whereas others show bright contrast. In general, the contrast variation of a SEM image is the variation of the secondary electron yield over a specimen, which in turn results from the change of topography and conductivity over the specimen. Nevertheless, Millman et al. were able to demonstrate with their experimental results that the dominant contrast mechanism should be the conductivity variation and that the regions of dark contrast were the superconducting phase whereas the regions of bright contrast were the non-superconducting phase, because the latter was a poor conductor and consequently, the charge building-up resulted in high secondary electron emission. This observation has since aroused much interest amoung the people in electron microscopy and high Tc superconductivity. The present paper is the preliminary report of our attempt to carry out the secondary electron imaging of this material in a scanning transmission electron microscope (STEM) rather than in a SEM. The advantage of performing secondary electron imaging in a TEM is obvious that, in a TEM, the spatial resolution is higher and many more complementary techniques, e.g, diffraction contrast imaging, phase contrast imaging, electron diffraction and various microanalysis techniques, are available.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

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