scholarly journals Basal Plane Bending of Homoepitaxial MPCVD Single-crystal Diamond

2020 ◽  
Author(s):  
Xiaotong Han ◽  
Peng Duan ◽  
Yan Peng ◽  
Xuejian Xie ◽  
Xiwei Wang ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Single Crystal ◽  
Basal Plane ◽  
Growth Parameters ◽  
Substrate Surface ◽  
Chemical Vapour ◽  
Growth Time ◽  
X Ray Diffraction ◽  
Single Crystal Diamond ◽  
Plane Bending

We report herein high-resolution x-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). The results reveal that growth parameters such as temperature, growth time and basal plane bending of the substrate affect the basal plane bending of SCD. First, the basal plane bending of SCD depends mainly on the substrate itself. The basal plane bending of SCD becomes more severe with increasing basal plane bending of the substrate and this type of basal plane bending cannot be recovered. The SCD growth experiments show that the basal plane bending increases at high temperature and with increasing growth time. Finally, to understand the mechanism behind basal plane bending, we investigate the substrate-surface temperature distribution as a function of basal plane bending of SCD fabricated by chemical vapour deposition (CVD). This allows us to propose a bending model and understand the origin of basal plane bending. The results indicate that an uneven temperature distribution on the substrate surface is the main cause of the CVD diamond base-plane bending.

scholarly journals Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

Materials ◽  
2020 ◽  
Vol 13 (20) ◽  
pp. 4510
Author(s):  
Xiaotong Han ◽  
Peng Duan ◽  
Yan Peng ◽  
Xiwei Wang ◽  
Xuejian Xie ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Single Crystal ◽  
Basal Plane ◽  
Growth Parameters ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Growth Time ◽  
Base Plane ◽  
Single Crystal Diamond ◽  
Plane Bending

We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affect the basal plane bending of SCD. First, the basal plane bending of SCD depends mainly on the substrate and becomes severe with increasing basal plane bending of the substrate. The SCD growth experiments show that the basal plane bending increases with elevated growth temperature and increased growth time. Finally, to understand the mechanism, we investigated the substrate-surface temperature distribution as a function of basal plane bending of SCD fabricated by chemical vapor deposition (CVD). This allowed us to propose a model and understand the origin of basal plane bending. The results indicate that an uneven temperature distribution on the substrate surface is the main cause of the base-plane bending of CVD diamond.

Growth of High Quality Poly-SiGe on Glass Substrates

1996 ◽  
Vol 452 ◽  
Author(s):  
Kunihiro Shiota ◽  
Daisuke Inoue ◽  
Kouichirou Minami ◽  
Masaji Yamamoto ◽  
Jun-ichi Hanna
Keyword(s):  
Electron Microscopy ◽  
Gas Flow ◽  
Growth Parameters ◽  
Substrate Surface ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Composition Variation ◽  
Gas Flow Ratio

AbstractThe composition variation and strutural properties of poly-SiGe thin films were investigated by Reactive Thermal CVD with Si2H6 and GeF4. Deposition of the films was carried out at a low temperature of 450°C on oxidized silicon substrates using different growth parameters, i.e., the source gas flow ratio (Si2H6/ GeF4) and thegas flow rate. The structural profiles of as-deposited films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).All these films show (220) preferential orientation. The mole fractions of Si in poly-SixGe1−x films were estimated to be from 0.95 to 0.05 for x by using Vegard's law for the XRD peaks. TEM observation revealed that high crystallinity was well established even in poly-Si0.95Ge0.05 films owing to the direct nucleation on the substrate surface.

X-ray diffraction method for determination of interplanar spacing and temperature distribution in crystals under an external temperature gradient

2015 ◽  
Vol 48 (3) ◽  
pp. 853-856 ◽  
Author(s):  
V. R. Kocharyan ◽  
A. S. Gogolev ◽  
A. E. Movsisyan ◽  
A. H. Beybutyan ◽  
S. G. Khlopuzyan ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Temperature Gradient ◽  
Single Crystal ◽  
Interplanar Spacing ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
External Temperature ◽  
X Ray ◽  
Spacing Distribution

An X-ray diffraction method is developed for the determination of the distribution of temperature and interplanar spacing in a single-crystal plate. In particular, the temperature and the interplanar spacing differences in two different parts of a quartz single crystal of X-cut are experimentally determined depending on the value of the temperature gradient applied perpendicularly to the reflecting atomic planes (10\bar 11). The temperature distribution along the direction perpendicular to the reflecting atomic planes (10\bar 11) and the interplanar spacing distribution of atomic planes (10\bar 11) are determined as well.

scholarly journals Finite element method study on the temperature distribution in the cell of large single crystal diamond

2010 ◽  
Vol 59 (3) ◽  
pp. 1923
Author(s):  
Han Qi-Gang ◽  
Ma Hong-An ◽  
Xiao Hong-Yu ◽  
Li Rui ◽  
Zhang Cong ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Temperature Distribution ◽  
Single Crystal ◽  
Large Single Crystal ◽  
Single Crystal Diamond ◽  
Element Method

Effect of Growth Parameters on Single Crystal Diamond Deposition by DC Arc Plasma Jet CVD

2012 ◽  
Vol 490-495 ◽  
pp. 3094-3099 ◽  
Author(s):  
Li Fu Hei ◽  
Jie Liu ◽  
Fan Xiu Lu ◽  
Cheng Ming Li ◽  
Jian Hua Song ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Single Crystal ◽  
Growth Parameters ◽  
Plasma Jet ◽  
Typical Feature ◽  
Arc Plasma ◽  
Diamond Sample ◽  
Single Crystal Diamond ◽  
Dc Arc

Homoepitaxial diamond layers were grown on commercial 3.5 x 3.5 x 1.2 mm3 HPHT synthetic type Ib (100) single crystal diamond plates using a DC Arc Plasma Jet CVD operating at gas recycling mode. The effects of substrate temperature and CH4/H2 ratio on the surface morphology, the growth rate and the quality of the synthesized diamond have been studied using optical microscopy and Raman spectroscopy. With no intentional nitrogen added, the growth rate up to 12.3µm/h has been obtained in the single crystal diamond sample deposited at 1000 °C with CH4/H2=0.625%, exhibiting relatively smooth surface morphology without any growth hillocks nor non-epitaxial crystallites, and presenting the typical feature of the epitaxial step-flow growth. The full width at half maximum (FWHM) of the Raman spectra was 2.08 cm-1, which was close to that of the natural type IIa single crystal diamond.

Epitaxy, microstructure, and processing-structure relationships of TiO2 thin films grown on sapphire (0001) by MOCVD

1993 ◽  
Vol 8 (10) ◽  
pp. 2634-2643 ◽  
Author(s):  
H.L.M. Chang ◽  
T.J. Zhang ◽  
H. Zhang ◽  
J. Guo ◽  
H.K. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Film Growth ◽  
Growth Parameters ◽  
Substrate Surface ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Tio2 Thin Films ◽  
Growth Plane ◽  
Deposited Films

TiO2 thin films have been deposited on sapphire (0001) substrates under various conditions by metal-organic chemical vapor deposition. The structural properties of the deposited films were characterized by x-ray diffraction and transmission electron microscopy. The important growth parameters were found to be the deposition temperature and the deposition rate. The ranges studied for the two parameters were 400 to 850 °C and 10 to 120 Å/min, respectively. Depending on the growth conditions, most of the deposited films were either single-phase anatase or rutile, or a mixture of the two. These films were all epitaxial, but none of them were single-crystal films. Three distinct epitaxial relationships were observed between the films and the substrates, and, depending on the growth conditions, a deposited film can contain one, two, or all three of them. The fact that the films we obtained, although epitaxial, were never single crystal is explained based on the consideration of the difference in the rotational symmetries of the substrate surface and the film growth plane. We believe that it should be generally true that, in heteroepitaxial growth, a true single-crystal film can never be obtained as long as the point symmetry group of the substrate surface is not a subgroup of that of the film growth plane.

scholarly journals Preparation of Samarium Doped Calcium Hydrogen Phosphate and Study of Its Density and Thermal and Dielectric Characteristics

2014 ◽  
Vol 2014 ◽  
pp. 1-8
Author(s):  
K. K. Bamzai ◽  
Goldy Slathia ◽  
Bindu Raina ◽  
Rashmi Gupta ◽  
Seema Verma ◽  
...  
Keyword(s):  
Single Crystal ◽  
Growth Parameters ◽  
X Ray Diffraction ◽  
Hydrogen Phosphate ◽  
Monoclinic System ◽  
Dielectric Characteristics ◽  
Growth Technique ◽  
Temperature Solution ◽  
Flotation Method ◽  
Kinetics Of

Samarium doped calcium hydrogen phosphate was synthesized as single crystal by room temperature solution growth technique, namely, silica gel technique. The kinetics of the growth parameters was studied with regard to variation of pH, dopant concentration, gel ageing, and upper reactant concentration. The optimum conditions for the growth of good quality single crystal were worked out. Single crystal X-ray diffraction analysis establishes that the crystal belongs to monoclinic system. The density observed by the flotation method is greater than the density of the reported pure calcium hydrogen phosphate thereby suggesting the incorporation of the dopant (Sm) ion into the lattice of host (CHP). Thermal analysis gave two sharp endothermic peaks which are due to partial dehydration and phase transition, respectively. Dielectric studies establish a shift in the Curie temperature from 355 to 370°C only at higher frequencies thereby suggesting the relaxational behavior of the material.

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