Growth of High Quality Poly-SiGe on Glass Substrates

1996 ◽  
Vol 452 ◽  
Author(s):  
Kunihiro Shiota ◽  
Daisuke Inoue ◽  
Kouichirou Minami ◽  
Masaji Yamamoto ◽  
Jun-ichi Hanna
Keyword(s):  
Electron Microscopy ◽  
Gas Flow ◽  
Growth Parameters ◽  
Substrate Surface ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Composition Variation ◽  
Gas Flow Ratio

AbstractThe composition variation and strutural properties of poly-SiGe thin films were investigated by Reactive Thermal CVD with Si2H6 and GeF4. Deposition of the films was carried out at a low temperature of 450°C on oxidized silicon substrates using different growth parameters, i.e., the source gas flow ratio (Si2H6/ GeF4) and thegas flow rate. The structural profiles of as-deposited films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).All these films show (220) preferential orientation. The mole fractions of Si in poly-SixGe1−x films were estimated to be from 0.95 to 0.05 for x by using Vegard's law for the XRD peaks. TEM observation revealed that high crystallinity was well established even in poly-Si0.95Ge0.05 films owing to the direct nucleation on the substrate surface.

Effects of Surface Energy on the Microstructures of Thin Sb Films

1990 ◽  
Vol 202 ◽  
Author(s):  
L. H. Chou ◽  
M. C. Kuo
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Grain Growth ◽  
Grain Orientation ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Diffraction Peaks

ABSTRACTThin Sb films have been prepared on glass substrates by rapid thermal evaporation. Films with thicknesses varied from 260 Å to 1300Å were used for the study. X-ray diffraction data showed that for films deposited at room substrate temperature, an almost random grain orientation was observed for films of 1300 Å thick and a tendency for preferred grain orientation was observed as films got thinner. For films of 260 Å thick, only two x-ray diffraction peaks--(003) and (006) were observed. After thermal annealing, secondary grains grew to show preferred orientation in all the films. This phenomenon was explained by surface-energy-driven secondary grain growth. This paper reports the effects of annealing time and film thickness on the secondary grain growth and the evolution of thin Sb film microstmctures. Transmission electron microscopy (TEM) and x-ray diffraction were used to characterize the films.

Preparation and Characterization of Nanocrystalline Gadolinium Oxide Powders and Films

2020 ◽  
Vol 850 ◽  
pp. 267-272 ◽  
Author(s):  
Regina Burve ◽  
Vera Serga ◽  
Aija Krūmiņa ◽  
Raimons Poplausks
Keyword(s):  
Electron Microscopy ◽  
Single Phase ◽  
Gadolinium Oxide ◽  
X Ray Diffraction ◽  
Cubic Crystal ◽  
Glass Substrates ◽  
Oxide Powders ◽  
Transmission Electron ◽  
The Mean

Due to its magnetic, electrical, absorption, and emission properties, nanoscale gadolinium oxide is widely used in various fields. In this research, nanocrystalline Gd2O3 powders and films on glass substrates have been produced by the extraction-pyrolytic method. X-ray diffraction analysis revealed the formation of single phase Gd2O3 with cubic crystal structure and the mean crystallite size from 9 to 25 nm in all produced materials. The morphology of samples has been characterized by scanning electron microscopy and transmission electron microscopy.

Synthesis of Crystalline C3N4 films and the new C-N Phases

1996 ◽  
Vol 441 ◽  
Author(s):  
Yan Chen ◽  
D. J. Johnson ◽  
R. H. Prince ◽  
Liping Guo ◽  
E. G. Wang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Monoclinic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Hot Filament

AbstractCrystalline C-N films composed of α- and β-C3N4, as well as other C-N phases, have been synthesized via bias-assisted hot-filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy(SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the films. Lattice constants of the α- and β-C3N4 phases obtained coincide very well with the theoretical values. In addition to these phases, two new C-N phases in the films have been identified by TEM and XRD; one having a tetragonal structure with a = 5.65 Å, c = 2.75Å, and the second having a monoclinic structure with a = 5.065 Å, b= 11.5 Å, c = 2.801 Å and β = 96°. Their stoichiometric values and atomic arrangements have not yet been identified. Furthermore, variation in growth parameters, for example methane concentration, bias voltage, etc., can yield preferred growth of different C-N phases.

Visible-Range Luminescence Study in Indium Oxide Nanowires

2007 ◽  
Vol 1010 ◽  
Author(s):  
Davide Calestani ◽  
Mingzheng Zha ◽  
Margherita Mazzera ◽  
Laura Lazzarini ◽  
Andrea Zappettini ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Gas Sensing ◽  
Visible Range ◽  
Silicon Substrates ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Oxide Nanowires ◽  
Fundamental Properties ◽  
Transmission Electron ◽  
Temperature Spectra

AbstractThe interest in semiconducting metal oxide nanowires for gas sensing devices is today very high. Besides common materials such as SnO2 or ZnO, also In2O3 has been obtained in this quasi-1D morphology . In the present work In2O3 nanowires have been grown by vapor transport process starting from 6N pure In. For a better knowledge of the fundamental properties and the sensing mechanism of In2O3 nanowires, the obtained samples have been investigated by different techniques, focusing mainly on the optical characterization. Their morphology and structure have been studied by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and X-Ray diffraction. The optical properties have been investigated as well, mainly by means of photo- (PL) and Cathodo-luminescence (CL) both applied in the UV-Visible range. A complex emission spectrum has been revealed and assigned to specific defects thanks to a deep analysis of the bands as functions of temperature (varying from 20 to 300K) and to suitable thermal treatments (in oxygen rich atmosphere at 1000°C). Moreover, the effects of electron beam irradiation have been pointed out by performing CL spectra on a single In2O3 nanowire after different irradiation times. The possible influence of the substrate has been verified by measuring low temperature spectra on In2O3 nanowires grown both on alumina and silicon substrates.

scholarly journals CATALYST–FREE GROWTH OF WELL–ALIGNED ZnO NANOWIRES ON GRAPHENE/Si SUBSTRATEBY THERMAL EVAPORATION

2018 ◽  
Vol 55 (1B) ◽  
pp. 174
Author(s):  
Tran Van Khai
Keyword(s):  
Electron Microscopy ◽  
Thermal Evaporation ◽  
Substrate Surface ◽  
Zinc Powder ◽  
X Ray Diffraction ◽  
Ultraviolet Emission ◽  
Hexagonal Wurtzite Crystal Structure ◽  
Transmission Electron ◽  
Strong Ultraviolet Emission ◽  
Hexagonal Wurtzite Crystal

Vertically well–aligned ZnO nanowire (NW) arrays with high density were directly synthesized on graphene/Si substrate by thermal evaporation of zinc powder without catalysts or additives. The ZnO NWs were characterized by field emission scanning electron microscopy (FE–SEM), high resolution transmission electron microscopy (HRTEM), X–ray diffraction (XRD), photoluminescence (PL), and Raman spectroscopy. The results showed that the obtained ZnO NWs have diameters in the range of 300–350 nm with lengths of several tens micrometers. The prepared ZnO NWs are of a single crystal, which have a hexagonal wurtzite crystal structure with c–axis (002) orientation growth perpendicular to the substrate surface. The NW arrays had a good crystal quality with excellent optical properties, indicating a sharp and strong ultraviolet emission at 380 nm, and a weak visible emission at around 516 nm. 

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

2022 ◽  
Vol 1048 ◽  
pp. 158-163
Author(s):  
Mekala Lavanya ◽  
Srirangam Sunita Ratnam ◽  
Thota Subba Rao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Visible Region ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Glass Substrates ◽  
Gas Flow Ratio

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

scholarly journals Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Angela De Bonis ◽  
Agostino Galasso ◽  
Antonio Santagata ◽  
Roberto Teghil
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Target ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A MgB2target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

Morphological and structural evolutions of nonequilibrium titanium-nitride alloy powders produced by reactive ball milling

1992 ◽  
Vol 7 (4) ◽  
pp. 888-893 ◽  
Author(s):  
M. Sherif El-Eskandarany ◽  
K. Sumiyama ◽  
K. Aoki ◽  
K. Suzuki
Keyword(s):  
Electron Microscopy ◽  
Titanium Nitride ◽  
Gas Flow ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Nitrogen Gas ◽  
X Ray ◽  
Grain Sizes ◽  
Transmission Electron

Nonequilibrium titanium-nitride alloy powders have been fabricated by a high energetic ball mill under nitrogen gas flow at room temperature and characterized by means of x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and differential scanning calorimetry. Initial hcp titanium is completely transformed to nonequilibrium-fcc Ti–N after 720 ks of the milling time. The fcc Ti–N phase is stable at relatively low temperature and transforms at 855 K to Ti2N and δ phases. At the final stage of milling, the particle- and grain-sizes of alloy powders are 1 mm and 5 nm, respectively, and the lattice parameter is 0.419 nm.

Characteristics of Palladium Thin Films Deposited by the Ionized Cluster Beam Technique

1991 ◽  
Vol 239 ◽  
Author(s):  
Maria Huffman ◽  
T. S. Kalkur ◽  
L. Kammerdiner ◽  
R. Kwor ◽  
L. L. Levenson ◽  
...  
Keyword(s):  
Grain Size ◽  
Substrate Temperature ◽  
Substrate Surface ◽  
Silicon Substrates ◽  
Cluster Beam ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Neutral Mode ◽  
Almost All ◽  
Substrate Temperatures

ABSTRACTAn ionized cluster beam (ICB) source was used to deposit Pd onto oxidized silicon substrates. The ICB source was operated in both the neutral mode (no ionization and no acceleration) and in the ICB mode with ionization and acceleration voltages at 3 kV and 6 k.V. Also, substrate temperatures were varied between 100°C and 400°C. The Pd film thicknesses were generally between 1, 200Å and 1, 800Å, with one film thickness about 500Å. The films were examined by transmission electron microscopy (TEM), transmission electron diffraction (TED), and x-ray diffraction (XRD). Grain size measurements by TEM and XRD showed that ionization and acceleration of Pd resulted in a slight increase in grain size compared to films deposited without ionization or acceleration at any substrate temperature. However, the grain size increased significantly as the substrate temperature rose. XRD showed that all ICB deposited Pd films have significant (111) texturing as determined by comparison to XRD data for Pd powder. For Pd films deposited at 400°C, almost all grains were oriented with the (111) planes parallel to the substrate surface. The electrical conductivity of all Pd films was comparable to that of bulk Pd.

scholarly journals Synthesis and Characterization of Single-Crystalline SnO2Nanowires

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Dezhou Wei ◽  
Yanbai Shen ◽  
Mingyang Li ◽  
Wengang Liu ◽  
Shuling Gao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Ambient Pressure ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Peak Sensitivity ◽  
The Fourier Transform

Tin oxide (SnO2) nanowires were synthesized on oxidized silicon substrates by thermal evaporation of tin grains at 900°C in Ar flow at ambient pressure. Structural characterization using X-ray diffraction and transmission electron microscopy shows that SnO2nanowires have a single crystal tetragonal structure. Scanning electron microscopy observation demonstrates that SnO2nanowires are 30–200 nm in diameter and several tens of micrometers in length. The surface vibration mode resulting from the nanosize effect at 565.1 cm−1was found from the Fourier transform infrared spectrum. The formation of SnO2nanowires follows a vapour-solid (VS) growth mechanism. The gas sensing measurements indicate that SnO2nanowire gas sensor obtains peak sensitivity at a low operating temperature of 150°C and shows reversible response to H2gas (100–1000 ppm) at an operating temperature of RT-300°C.

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