Mold Pattern Fabrication by Nanoscratching

2013 ◽  
Vol 7 (6) ◽  
pp. 686-693 ◽  
Author(s):  
Jun Shimizu ◽  
◽  
Libo Zhou ◽  
Takeyuki Yamamoto ◽  
Hirotaka Ojima ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Single Layer ◽  
Silicon Substrates ◽  
Nanoscale Structures ◽  
Multistage Processes ◽  
Atomic Force ◽  
Layer Structures ◽  
Long Time ◽  
Scale Structures ◽  
Alternative Solutions

MEMS technologies for various nano/micro-devices often requires special facilities and complicated,multistage processes. The fabrication cost is thus extremely high. Consequently, alternative solutions have been sought, and NanoImprint Lithography (NIL) is one of the potential solutions. To date, the nano/micromolds for NIL are mainly fabricated using photolithography or focused ion beams. However, such beam methods generally make use of special instruments and require a long time to draw precise patterns. Thus, this study aims to fabricate nanoscale structures on monocrystalline silicon substrates using nanoscratching, which can potentially be used to fabricate nano/micro-molds for NIL. This paper discusses how various nano/micro-scale structures such as lineand-space, single-layer, and multiple-layer structures were fabricated on a silicon substrate using nanoscratching by an atomic force microscope equipped with a sharp probe made of monocrystalline diamond. Subsequent chemical etching was also conducted on the fabricated groove patterns to enlarge the depth of the fabricated groove patterns. The results confirmed that the groove was deepened several times, with only a slight increase in its width. A nanoimprint experiment was also carried out, and the line-and-space patterns were duplicated successfully on a polycarbonate resin film.

Mold Fabricated by Nanoscratching for Nanoimprint Lithography

2010 ◽  
Vol 126-128 ◽  
pp. 843-848
Author(s):  
Wataru Ohsone ◽  
Jun Shimizu ◽  
Li Bo Zhou ◽  
Hirotaka Ojima ◽  
Teppei Onuki ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Single Step ◽  
Silicon Substrates ◽  
Multistage Processes ◽  
Fabrication Cost ◽  
Atomic Force ◽  
Layer Structures ◽  
Mems Technology ◽  
Scale Structures ◽  
Monocrystalline Diamond

The MEMS technology for various nano/micro devices often requires special facilities and complicated and multistage processes, thus the fabrication cost is extremely high. This research aimed to fabricate nanoscale basic structures on silicon substrates using nanoscratching, which can be potentially used to make nano/micro molds for nanoimprint lithography. In this study, various nano/micro-scale structures, such as groove and, single and multiple layer structures were generated on the silicon substrate using an atomic force microscope equipped with a sharp probe made of monocrystalline diamond. The nanoimprint experiment was also performed using the fabricated single-step mold and silicon-resin to fabricate single island structures.

scholarly journals Realization of Ultraflat Plastic Film Using Dressed-Photon-Phonon-Assisted Selective Etching of Nanoscale Structures

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Takashi Yatsui ◽  
Wataru Nomura ◽  
Motoichi Ohtsu
Keyword(s):  
Continuous Wave ◽  
Wavelength Dependence ◽  
Selective Etching ◽  
Pmma Substrate ◽  
Height Difference ◽  
Nanoscale Structures ◽  
Photochemical Etching ◽  
Atomic Force ◽  
Difference Function ◽  
Scale Structures

We compared dressed-photon-phonon (DPP) etching to conventional photochemical etching and, using a numerical analysis of topographic images of the resultant etched polymethyl methacrylate (PMMA) substrate, we determined that the DPP etching resulted in the selective etching of smaller scale structures in comparison with the conventional photochemical etching. We investigated the wavelength dependence of the PMMA substrate etching using an O2 gas. As the dissociation energy of O2 is 5.12 eV, we applied a continuous-wave (CW) He-Cd laser (λ= 325 nm, 3.81 eV) for the DPP etching and a 5th-harmonic Nd:YAG laser (λ= 213 nm, 5.82 eV) for the conventional photochemical etching. From the obtained atomic force microscope images, we confirmed a reduction in surface roughness, Ra, in both cases. However, based on calculations involving the standard deviation of the height difference function, we confirmed that the conventional photochemical etching method etched the larger scale structures only, while the DPP etching process selectively etched the smaller scale features.

Interfacial Sliding in Back-End Interconnect Structures in Microelectronic Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.A. Peterson ◽  
C. Park ◽  
I. Dutta
Keyword(s):  
Dielectric Material ◽  
Single Layer ◽  
Component Reliability ◽  
Force Microscopy ◽  
Interfacial Sliding ◽  
Microelectronic Devices ◽  
Atomic Force ◽  
Layer Structures ◽  
Out Of Plane ◽  
Plane Step

AbstractDeformation of interconnect structures at the back-end of microelectronic devices during processing or service can have a pronounced effect on component reliability. Here, we use atomic force microscopy (AFM) to study plastic deformation and interfacial sliding of Cu interconnects lines on Si. The behavior of both stand-alone Cu lines and lines embedded in a low K dielectric was studied. Following thermal cycling, changes were observed in the in-plane Cu line dimensions, as well as the out-of plane step height between Cu and dielectric in single layer structures. These were attributed to differential deformation of the Cu/Si and Cu/dielectric material pairs due to thermal expansion mismatch, accommodated by interfacial creep. These results are discussed in light of previous work on the mechanism of interfacial creep. Some preliminary results on the distortion of Cu lines due to package-level stresses are also presented.

scholarly journals Differences in the Mechanical Properties of Monolayer and Multilayer WSe2/MoSe2

MRS Advances ◽  
2018 ◽  
Vol 3 (6-7) ◽  
pp. 373-378
Author(s):  
Y. M. Jaques ◽  
P. Manimunda ◽  
Y. Nakanishi ◽  
S. Susarla ◽  
C. F. Woellner ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Transition Metal Dichalcogenides ◽  
Single Layer ◽  
Silicon Substrates ◽  
2D Layered Materials ◽  
Layer Structures ◽  
Crystal Properties ◽  
Metal Dichalcogenides ◽  
Optical And Mechanical Properties ◽  
Dynamics Simulations

ABSTRACTTransition metal dichalcogenides are 2D structures with remarkable electronic, chemical, optical and mechanical properties. Monolayer and crystal properties of these structures have been extensively investigated, but a detailed understanding of the properties of their few-layer structures are still missing. In this work we investigated the mechanical differences between monolayer and multilayer WSe2 and MoSe2, through fully atomistic molecular dynamics simulations (MD). It was observed that single layer WSe2/MoSe2 deposited on silicon substrates have larger friction coefficients than 2, 3 and 4 layered structures. For all considered cases it is always easier to peel off and/or to fracture MoSe2 structures. These results suggest that the interactions between first layer and substrate are stronger than interlayer interactions themselves. Similar findings have been reported for other nanomaterials and it has been speculated whether this is a universal-like behavior for 2D layered materials. We have also analyzed fracture patterns. Our results show that fracture is chirality dependent with crack propagation preferentially perpendicular to W(Mo)-Se bonds and faster for zig-zag-like defects.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

scholarly journals Mastering of NIL Stamps with Undercut T-Shaped Features from Single Layer to Multilayer Stamps

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 956
Author(s):  
Philipp Taus ◽  
Adrian Prinz ◽  
Heinz D. Wanzenboeck ◽  
Patrick Schuller ◽  
Anton Tsenov ◽  
...  
Keyword(s):  
Electron Beam Lithography ◽  
Nanoimprint Lithography ◽  
Silicon Oxide ◽  
Three Dimensional ◽  
Single Layer ◽  
Fabrication Technology ◽  
Large Area ◽  
Structural Colors ◽  
Biomimetic Structures ◽  
Morpho Butterfly

Biomimetic structures such as structural colors demand a fabrication technology of complex three-dimensional nanostructures on large areas. Nanoimprint lithography (NIL) is capable of large area replication of three-dimensional structures, but the master stamp fabrication is often a bottleneck. We have demonstrated different approaches allowing for the generation of sophisticated undercut T-shaped masters for NIL replication. With a layer-stack of phase transition material (PTM) on poly-Si, we have demonstrated the successful fabrication of a single layer undercut T-shaped structure. With a multilayer-stack of silicon oxide on silicon, we have shown the successful fabrication of a multilayer undercut T-shaped structures. For patterning optical lithography, electron beam lithography and nanoimprint lithography have been compared and have yielded structures from 10 µm down to 300 nm. The multilayer undercut T-shaped structures closely resemble the geometry of the surface of a Morpho butterfly, and may be used in future to replicate structural colors on artificial surfaces.

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Strain-Engineered Rippling and Manipulation of Single-Layer WS2 by Atomic Force Microscopy

2021 ◽  
Vol 125 (16) ◽  
pp. 8696-8703
Author(s):  
Fei Pang ◽  
Feiyue Cao ◽  
Le Lei ◽  
Lan Meng ◽  
Shili Ye ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Single Layer ◽  
Force Microscopy ◽  
Atomic Force

Well-Aligned Graphene Oxide Nanosheets Decorated with Zinc Oxide Nanocrystals for High Performance Photocatalytic Application

2015 ◽  
Vol 14 (03) ◽  
pp. 1550007 ◽  
Author(s):  
K. Kaviyarasu ◽  
C. Maria Magdalane ◽  
E. Manikandan ◽  
M. Jayachandran ◽  
R. Ladchumananandasivam ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Graphene Oxide ◽  
High Performance ◽  
Chemical Reduction ◽  
Visible Region ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Graphene Oxides ◽  
X Ray ◽  
Nanoscale Structures

Graphene oxide (GO) nanosheets modified with zinc oxide nanocrystals were achieved by a green wet-chemical approach. As-obtained products were characterized by XRD, Raman spectra, XPS, HR-TEM, EDS, PL and Photocatalytic studies. XRD studies indicate that the GO nanosheet have the same crystal structure found in hexagonal form of ZnO . The enhanced Raman spectrum of 2D bands confirmed formation of single layer graphene oxides. The gradual photocatalytic reduction of the GO nanosheet in the GO : ZnO suspension of ethanol was studied by using X-ray photoelectron (XPS) spectroscopy. The nanoscale structures were observed and confirmed using high resolution transmission electron microscopy (HR-TEM). The evolution of the elemental composition, especially the various numbers of layers were determined from energy dispersive X-ray spectra (EDS). PL properties of GO : ZnO nanosheet were found to be dependent on the growth condition and the resultant morphology revealed that GO nanosheet were highly transparent in the visible region. The photocatalytic performance of GO : ZnO nanocomposites was performed under UV irradiation. Therefore, the ZnO nanocrystals in the GO : ZnO composite could be applied in gradual chemical reduction and consequently tuning the electrical conductivity of the graphene oxide nanosheet.

Sol-Gel Derived Titaniajormosil Composite Thin Films For Optical Waveguide Applications

1999 ◽  
Vol 576 ◽  
Author(s):  
Wenxiu Que ◽  
Y. Zhou ◽  
Y. L. Lam ◽  
Y. C. Chan ◽  
S. D. Cheng ◽  
...  
Keyword(s):  
Sol Gel ◽  
Single Layer ◽  
Titanium Content ◽  
Gravimetric Analysis ◽  
Force Microscopy ◽  
Free Film ◽  
Free Silica ◽  
Atomic Force ◽  
Bonding Properties ◽  
Single Layer Film

ABSTRACTWe report the preparation of sol-gel waveguide films based on a newly developed recipe to incorporate organic molecules into the inorganic sol-gel glass matrix. The film was derived from a sol that has a higher titanium content in an organically modified silane (ORMOSIL), namely, ÿ-Glycidoxypropyltrimethoxysilane. We have shown that using spin-coating and low temperature baking, a single coating layer can have a thickness of more than 1.5 μm. When such a single layer film is deposited on a microscope glass slide or a piece of silicon with a buffercladding layer, it is able to support the guiding of optical waves. We have characterized the film using scanning electron microscopy, atomic force microscopy, X-ray diffractometry, thermal gravimetric analysis. differential thermal analysis and Fourier transform infrared spectroscopy and have studied the properties of the waveguide film, including the microstructural properties. the chemical bonding properties, and the optical properties. Based on these experimental results, we found that a heat-treatment at a temperature slightly below 200°C is necessary to attain a dense pore-free film. It has also been noted that a purely inorganic and crack-free silica-titania film can be obtained after baking the titania-ORMOSIL composite film at 500°C or higher.

Sign in / Sign up

Export Citation Format

Share Document