scholarly journals Enhanced Breakdown Voltage of Si-GaN Monolithic Heterogeneous Integrated Cascode FETs by the Device Structure Design

2021 ◽  
Author(s):  
Jiaqi Zhang ◽  
Weihang Zhang ◽  
Jing Wan ◽  
Guofang Yang ◽  
Ya’nan Cheng ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Structure Design ◽  
Avalanche Breakdown ◽  
Transfer Printing ◽  
Device Structure ◽  
Factors Affecting ◽  
Electrical Isolation ◽  
Isolation Layer ◽  
Device Structures ◽  
Two Factors

Abstract In this work, the factors affecting the breakdown voltage of Si-GaN monolithic heterogeneous integrated Casccode FET fabricated by transfer printing were investigated. These two factors are the avalanche breakdown resistance of the Si device and the thickness of SiN electrical isolation layer. Two kinds of device structures, Si MOSFET and Si laterally-diffused MOSFET (LDMOSFET), were designed to study the effect of the avalanche breakdown resistance of the Si devices on the breakdown characteristics of Cascode FET. The effect of the thickness of SiN electrical isolation layer was analyzed. Finally, the breakdown voltage of monolithic integrated Cascode FET reached 770 V.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node

2019 ◽  
Vol 11 (6) ◽  
pp. 349-355 ◽  
Author(s):  
Weitao Cheng ◽  
Akinobu Teramoto ◽  
Tadahiro Ohmi
Keyword(s):  
Structure Design ◽  
Device Structure ◽  
New Device

Non-Destructive Measurements of III-V Semiconductor Device Structure by a Hard X-ray Microprobe

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Uchida ◽  
J. Shigeta ◽  
Y. SUZUKI
Keyword(s):  
Semiconductor Device ◽  
Film Structure ◽  
Device Structure ◽  
X Ray ◽  
Model Sample ◽  
Device Structures ◽  
The Difference ◽  
X Ray Absorption ◽  
Non Destructive ◽  
Non Destructive Characterization

ABSTRACTA non-destructive characterization technique featuring a hard X-ray Microprobe is demonstrated for lll-V semiconductor device structures. A GaAs FET with a 2 μm gate length is measured as a model sample of a thin film structure. X-ray scanning microscopic images of the FET are obtained by diffracted X-ray and fluorescence X-ray detection. Diffracted X-ray detection measures the difference in gate material and source or drain material as a gray level difference on the image due to the X-ray absorption ratio. Ni Ka fluorescence detection, on the other hand, provides imaging of 500 Å thick Ni layers, which are contained only in the source and drain metals, through non-destructive observation.

Initial weight and virus dose: two factors affecting the onset of acute coxsackievirus B3 myocarditis in C57BL/6 mouse—a histopathology-based study

2013 ◽  
Vol 22 (1) ◽  
pp. 96-101 ◽  
Author(s):  
Minghui Li ◽  
Xinggang Wang ◽  
Yuquan Xie ◽  
Yeqing Xie ◽  
Xian Zhang ◽  
...  
Keyword(s):  
Coxsackievirus B3 ◽  
Initial Weight ◽  
Factors Affecting ◽  
Virus Dose ◽  
Two Factors

scholarly journals Using a Novel Grey DANP Model to Identify Interactions between Manufacturing and Logistics Industries in China

2018 ◽  
Vol 10 (10) ◽  
pp. 3456 ◽  
Author(s):  
Peng Jiang ◽  
Yi-Chung Hu ◽  
Ghi-Feng Yen ◽  
Hang Jiang ◽  
Yu-Jing Chiu
Keyword(s):  
Manufacturing Industry ◽  
Multiple Criteria Decision Making ◽  
Value Added ◽  
Manufacturing Industries ◽  
Direct Influence ◽  
Key Factors ◽  
Logistics Industry ◽  
Influence Matrix ◽  
Factors Affecting ◽  
Two Factors

As a crucial part of producer services, the logistics industry is highly dependent on the manufacturing industry. In general, the interactive development of the logistics and manufacturing industries is essential. Due to the existence of a certain degree of interdependence between any two factors, interaction between the two industries has produced a basis for measurement; identifying the key factors affecting the interaction between the manufacturing and logistics industries is a kind of decision problem in the field of multiple criteria decision making (MCDM). A hybrid MCDM method, DEMATEL-based ANP (DANP) is appropriate to solve this problem. However, DANP uses a direct influence matrix, which involves pairwise comparisons that may be more or less influenced by the respondents. Therefore, we propose a decision model, Grey DANP, which can automatically generate the direct influence matrix. Statistical data for the logistics and manufacturing industries in the China Statistical Yearbook (2006–2015) were used to identify the key factors for interaction between these two industries. The results showed that the key logistics criteria for interaction development are the total number of employees in the transport business, the volume of goods, and the total length of routes. The key manufacturing criteria for interaction development are the gross domestic product and the value added. Therefore, stakeholders should increase the number of employees in the transport industry and freight volumes. Also, the investment in infrastructure should be increased.

Lab Testing and Finite Element Method Simulation of Hole Deflector Performance for Radial Jet Drilling

2017 ◽  
Vol 139 (3) ◽  
Author(s):  
Bin Wang ◽  
Gensheng Li ◽  
Zhongwei Huang ◽  
Tianqi Ma ◽  
Dongbo Zheng ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Low Cost ◽  
Geometric Model ◽  
Frictional Resistance ◽  
Finite Element Method Simulation ◽  
Optimization Method ◽  
Structure Design ◽  
Coal Bed ◽  
Factors Affecting ◽  
High Pressure Water Jet

Radial jet drilling (RJD) is an efficient approach for improving the productivity of wells in low permeability, marginal and coal-bed methane (CBM) reservoirs at a very low cost. It uses high-pressure water jet to drill lateral holes from a vertical wellbore. The length of the lateral holes is greatly influenced by the frictional resistance in the hole deflector. However, the hole deflector frictional resistance and structure design have not been well studied. This work fills that gap. Frictional resistances were measured in a full-scale experiment and calculated by numerical simulation. The structure of the hole deflector was parameterized and a geometric model was developed to design the hole deflector track. An empirical model was then established to predict the frictional resistance as a function of the hole deflector structure parameters and an optimization method for designing the hole deflector was proposed. Finally, four types of hole deflectors were optimized using this method. The results show good agreement between the numerical simulation and the experimental data. The model error is within 11.6%. The bend radius R and exit angle β are the key factors affecting the performance of the hole deflector. The validation test was conducted for a case hole deflector (5½ in. casing). The measured frictional resistance was decreased from 31.44 N to 23.16 N by 26.34%. The results from this research could serve as a reference for the design of hole deflectors for radial jet drilling.

scholarly journals Impact of external factors on quality financial reporting: The case of Vietnam

2016 ◽  
Vol 19 (1) ◽  
pp. 61-70
Author(s):  
Thuan Quoc Pham ◽  
Dao Xuan La
Keyword(s):  
Financial Reporting ◽  
External Factors ◽  
Internal Factors ◽  
Factors Affecting ◽  
Two Factors ◽  
Accounting Software ◽  
Major Factors ◽  
Pressure Factor ◽  
Independent Audit

The objective of this study is to identify the major factors that impact on the quality of financial reporting and to suggest model of the factors affecting on the quality of financial reporting for Vietnamese enterprises . There are two factors group affecting on the quality of financial reporting: internal factors and external factors, this study is limited to the scope of the external factors. By using case studies, analytical results indicate that Tax Pressure factor has the greatest impact on the quality of financial reporting, the remaning factors include: Listed Securities, Accounting Software and Independent Audit. Two factors, Politics and Regulatory Environment have limited impact on the quality financial reporting.

Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 865-868
Author(s):  
Stanislav I. Soloviev ◽  
Alexey V. Vert ◽  
Jody Fronheiser ◽  
Peter M. Sandvik
Keyword(s):  
Optical Properties ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Avalanche Photodiodes ◽  
Positive Temperature Coefficient ◽  
Avalanche Breakdown ◽  
Positive Temperature ◽  
Electrical And Optical Properties ◽  
Positive Angle

In this work, avalanche photodiodes (APDs) were fabricated using a-plane 6H- and 4H-SiC materials to investigate their electrical and optical properties. Temperature dependence of avalanche breakdown was measured. The diode structures were fabricated with positive angle beveling and oxide passivation to ensure a uniform breakdown across the device area. Despite the apparent presence of micro-plasmas, we observed that the breakdown voltage of a-plane 6H-SiC APDs increased with temperature suggesting a positive temperature coefficient.

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