scholarly journals Scaling Behavior of InAlN/GaN HEMTs on Silicon for RF Applications

2022 ◽  
Author(s):  
Peng Cui ◽  
Yuping Zeng
Keyword(s):  
Cutoff Frequency ◽  
Equivalent Circuit Model ◽  
Scaling Behavior ◽  
Gate Length ◽  
High Electron ◽  
Intrinsic Parameters ◽  
Gan Hemt ◽  
Gan Hemts ◽  
Rf Applications ◽  
20 Nm

Abstract Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (Ion/Ioff) ratio of 7.28 × 106, an average subthreshold swing (SS) of 72 mV/dec, a low drain-induced barrier lowing (DIBL) of 88 mV, an off-state three-terminal breakdown voltage (BVds) of 36 V, a current/power gain cutoff frequency (fT/fmax) of 140/215 GHz, and a Johnson’s figure-of-merit (JFOM) of 5.04 THz∙V is simultaneously demonstrated. The device extrinsic and intrinsic parameters are extracted using equivalent circuit model, which is verified by the good agreement between simulated and measured S-parameter values. Then the scaling behavior of InAlN/GaN HEMTs on Si is predicted using the extracted extrinsic and intrinsic parameters of devices with different gate lengths (Lg). It presents that a fT/fmax of 230/327 GHz can be achieved when Lg­ scales down to 20 nm with the technology developed in the study, and an improved fT/fmax of 320/535 GHz can be achieved on a 20-nm-gate-length InAlN/GaN HEMT with regrown ohmic contact technology and 30% decreased parasitic capacitance. This study confirms the feasibility of further improvement of InAlN/GaN HEMTs on Si for RF applications.

scholarly journals Scaling Behavior of Sub-100 nm InAlN/GaN HEMTs on Silicon for RF Applications

2021 ◽  
Author(s):  
Peng Cui ◽  
Yuping Zeng
Keyword(s):  
Cutoff Frequency ◽  
Equivalent Circuit Model ◽  
Scaling Behavior ◽  
Gate Length ◽  
High Electron ◽  
Intrinsic Parameters ◽  
Gan Hemt ◽  
Gan Hemts ◽  
Rf Applications ◽  
20 Nm

Abstract Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (Ion/Ioff) ratio of 7.28 × 106, an average subthreshold swing (SS) of 72 mV/dec, a low drain-induced barrier lowing (DIBL) of 88 mV, an off-state three-terminal breakdown voltage (BVds) of 36 V, a current/power gain cutoff frequency (fT/fmax) of 140/215 GHz, and a Johnson’s figure-of-merit (JFOM) of 5.04 THz∙V is simultaneously demonstrated. The device extrinsic and intrinsic parameters are extracted using equivalent circuit model, which is verified by the good agreement between simulated and measured S-parameter values. Then the scaling behavior of InAlN/GaN HEMTs on Si is predicted using the extracted extrinsic and intrinsic parameters of devices with different gate lengths (Lg). It presents that a fT/fmax of 230/327 GHz can be achieved when Lg­ scales down to 20 nm with the technology developed in the study, and an improved fT/fmax of 320/535 GHz can be achieved on a 20-nm-gate-length InAlN/GaN HEMT with regrown ohmic contact technology and 30% decreased parasitic capacitance. This study confirms the feasibility of further improvement of InAlN/GaN HEMTs on Si for RF applications.

Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band

2012 ◽  
Vol 4 (5) ◽  
pp. 495-503 ◽  
Author(s):  
Jérôme Chéron ◽  
Michel Campovecchio ◽  
Denis Barataud ◽  
Tibault Reveyrand ◽  
Michel Stanislawiak ◽  
...  
Keyword(s):  
High Efficiency ◽  
Extraction Procedure ◽  
Equivalent Circuit Model ◽  
High Electron Mobility Transistor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Electrical Modeling ◽  
Power Matching ◽  
Gan Hemt ◽  
Gan Hemts

The electrical modeling of power packages is a major issue for designers of high-efficiency hybrid power amplifiers. This paper reports the synthesis and the modeling of a packaged Gallium nitride (GaN) High electron mobility transistor (HEMT) associating a nonlinear model of the GaN HEMT die with an equivalent circuit model of the package. The extraction procedure is based on multi-bias S-parameter measurements of both packaged and unpackaged (on-wafer) configurations. Two different designs of 20 W packaged GaN HEMTs illustrate the modeling approach that is validated by time-domain load-pull measurements in S-band. The advantage of the electrical modeling dedicated to packaged GaN HEMTs is to enable a die-package co-design for power matching. Internal matching elements such as Metal oxide semiconductor (MOS) capacitors, Monolithic microwave integrated circuits (MMICs), and bond wires can be separately modeled to ensure an efficient optimization of the package for high power Radio frequency (RF) applications.

Strain-engineering in AlGaN/GaN HEMTs: impact of silicon nitride passivation layer on electrical performance

2021 ◽  
Author(s):  
Sanghamitra Das ◽  
Taraprasanna Dash ◽  
Devika Jena ◽  
Eleena Mohapatra ◽  
C K Maiti
Keyword(s):  
Experimental Data ◽  
Compressive Strain ◽  
Cutoff Frequency ◽  
Strain Engineering ◽  
Electrical Performance ◽  
Current Gain ◽  
Great Promise ◽  
High Electron ◽  
Wide Range ◽  
Gan Hemts

Abstract In this work, we present a physics-based analysis of two-dimensional electron gas (2DEG) sheet carrier density and other microwave characteristics such as transconductance and cutoff frequency of AlxGa1-xN/GaN high electron mobility transistors (HEMT). An accurate polarization-dependent charge control-based analysis is performed for microwave performance assessment in terms of current, transconductance, gate capacitances, and cutoff frequency of lattice-mismatched AlGaN/GaN HEMTs. The influence of stress on spontaneous and piezoelectric polarization is included in the simulation of an AlGaN/GaN HEMT. We have shown the change in threshold voltage (Vt) due to tensile and compressive strain with different gate lengths. Also, the influence of stress due to the change in nitride thickness is presented. Our simulation results for drain current, transconductance, and current-gain cutoff frequency for various gate length devices are calibrated and verified with experimental data over a wide range of gate and drain applied voltages, which are expected to be useful for microwave circuit design. The predicted transconductance, drain conductance, and operation frequency are quite close to the experimental data. The AlGaN/GaN heterostructure HEMTs with nitride passivation layers show great promise as a candidate in future high speed and high power applications.

scholarly journals A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 353 ◽  
Author(s):  
Giovanni Crupi ◽  
Antonio Raffo ◽  
Valeria Vadalà ◽  
Giorgio Vannini ◽  
Alina Caddemi
Keyword(s):  
Short Circuit ◽  
Equivalent Circuit Model ◽  
Short Circuit Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
Device Performance ◽  
High Electron ◽  
Gan Hemt ◽  
Temperature Conditions ◽  
Conventional Instrumentation

The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current-gain (h21) of solid-state electronic devices. To gain a clear and comprehensive understanding of how these anomalous phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the experimental results are analyzed and interpreted in terms of the circuit elements to investigate the origin of the kink effects and their dependence on the operating condition. This empirical analysis provides valuable information, simply achievable by conventional instrumentation, that can be used not only by GaN foundries to optimize the technology processes and, as a consequence, device performance, but also by designers that need to face out with the pronounced kink effects of this amazing technology.

Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT

2012 ◽  
Vol 217-219 ◽  
pp. 2393-2396 ◽  
Author(s):  
Han Guo ◽  
Wu Tang ◽  
Wei Zhou ◽  
Chi Ming Li
Keyword(s):  
Electrical Properties ◽  
Doping Concentration ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Saturation Current ◽  
Gan Hemt ◽  
Cap Layer ◽  
Dimensional Electron Gas

The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance gm, saturation current Ids, current-gain cutoff frequency fT, maximum oscillation frequency fmax and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large Ids of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the gm and Ids.

scholarly journals Junctionless Gate-All-Around Nanowire FET with Asymmetric Spacer for Continued Scaling

2021 ◽  
Author(s):  
Bharath Sreenivasulu Vakkalak ◽  
Vadthiya Narendar
Keyword(s):  
Electrical Properties ◽  
Cutoff Frequency ◽  
Subthreshold Swing ◽  
Electrical Performance ◽  
Gate Length ◽  
Dynamic Power ◽  
Gate Capacitance ◽  
Static Power ◽  
Rf Applications

Abstract In this paper we have performed scaling performance of asymmetric junctionless (JL) SOI nanowire FET at 10 nm gate length (LG). To study the device electrical performance various DC metrics like SS, DIBL, ION/IOFF ratio are performed. Even at 5 nm, the device has good electrical properties with subthreshold swing (SS) = 64 mV/dec, drain induced barrier lowering (DIBL) = 45 mV/V, and switching ratio (ION/IOFF) = 106 shows a higher level of electrostatic integrity. Moreover, to study scaling flexibility towards analog/RF applications various parameters like transconductance (I), transconductance generation factor (TGF), total gate capacitance (Cgg), and cutoff frequency (fT) are determined. Furthermore, the dynamic power (DP) and static power (SP) consumption of the device with scaling is also presented. The findings of the study show that asymmetric JL nanowire FET is one of the scaling possibilities.

scholarly journals An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 549
Author(s):  
Mohammad Abdul Alim ◽  
Christophe Gaquiere ◽  
Giovanni Crupi
Keyword(s):  
Ambient Temperature ◽  
Equivalent Circuit Model ◽  
Gate Length ◽  
Scattering Parameters ◽  
Temperature Dependent ◽  
Gan Hemt ◽  
Electron Transport Properties ◽  
The Impact ◽  
Insight Into ◽  
Microwave Characteristics

Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from −40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.

Study on the electron mobility related with ohmic contact width in AlGaN/GaN HEMTs

2020 ◽  
pp. 2150008
Author(s):  
Ming Yang ◽  
Qizheng Ji ◽  
Xinguang Su ◽  
Weihong Zhang ◽  
Yuanyuan Wang ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
Scattering Theory ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gan Hemt ◽  
Polarization Charge ◽  
Electron Mobility Transistors ◽  
Contact Width ◽  
Gan Hemts

For the fabricated AlGaN/GaN high electron mobility transistors (HEMTs) with different Ohmic contact widths, the gate-channel electron mobility is obtained experimentally. Mobility curves show very different values and trends. This phenomenon is investigated with the scattering theory in AlGaN/GaN HEMTs. The reason for the different mobility curves is found to be attributed to the different polarization charge distributions at the AlGaN/GaN interface. The AlGaN/GaN HEMT with a smaller Ohmic contact width corresponds to positive additional polarization charge near the Ohmic contact. The AlGaN/GaN HEMT with a larger Ohmic contact width corresponds to negative additional polarization charge near the Ohmic contact. Changing the Ohmic contact width will be a new dimension to optimize the characteristics of AlGaN/GaN HEMTs effectively.

scholarly journals Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

2021 ◽  
Author(s):  
Samaneh Sharbati ◽  
Iman Gharibshahian ◽  
Thomas Ebel ◽  
Ali A. Orouji ◽  
Wulf-Toke Franke
Keyword(s):  
Analytical Model ◽  
Electron Gas ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Dimensional Electron Gas ◽  
Recessed Gate

AbstractA physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction in non-recessed depletion-mode GaN HEMTs. The analytical model indicates that the 2DEG charge density in the channel increases from 2.4 × 1012 cm−2 to 1.8 × 1013 cm−2 when increasing the Al mole fraction from x = 0.1 to 0.4 for an experimental non-recessed-gate GaN HEMT. In the recessed-gate GaN HEMT, in addition to these parameters, the recess height can also control the 2DEG to achieve high-performance power electronic devices. The model also calculates the critical recess height for which a normally-ON GaN switch becomes normally-OFF. This model shows good agreement with reported experimental results and promises to become a useful tool for advanced design of GaN HEMTS.

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