scholarly journals Multilevel resistive switching memory based on a CH3NH3PbI3-xClx film with potassium chloride additives

2020 ◽  
Author(s):  
Fengzhen Lv ◽  
Kang Ling ◽  
Tingting Zhong ◽  
Fuchi Liu ◽  
Xiaoguang Liang ◽  
...  
Keyword(s):  
Potassium Chloride ◽  
Resistive Switching ◽  
Indium Tin Oxide ◽  
Switching Behavior ◽  
Carrier Injection ◽  
Retention Performance ◽  
Resistive Switching Behavior ◽  
Glass Substrates ◽  
Ito Glass ◽  
Temperature Solution

Abstract High-quality CH3NH3PbI3-xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide(ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/Glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.

scholarly journals Multilevel resistive switching memory based on a CH3NH3PbI3-xClx film with potassium chloride additives

2020 ◽  
Author(s):  
Fengzhen Lv ◽  
Kang Ling ◽  
Tingting Zhong ◽  
Fuchi Liu ◽  
Xiaoguang Liang ◽  
...  
Keyword(s):  
Potassium Chloride ◽  
Resistive Switching ◽  
Indium Tin Oxide ◽  
Switching Behavior ◽  
Carrier Injection ◽  
Retention Performance ◽  
Resistive Switching Behavior ◽  
Glass Substrates ◽  
Ito Glass ◽  
Temperature Solution

Abstract High-quality CH3NH3PbI3-xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide(ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/Glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.

scholarly journals Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1361
Author(s):  
Fengzhen Lv ◽  
Tingting Zhong ◽  
Yongfu Qin ◽  
Haijun Qin ◽  
Wenfeng Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Indium Tin Oxide ◽  
Double Perovskite ◽  
Memory Device ◽  
Lead Free ◽  
Switching Behavior ◽  
Light Illumination ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Ito Glass

Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs2AgBiBr6 films with dense surfaces and uniform grains were prepared by the low-temperature sol-gel method on indium tin oxide (ITO) substrates. A memory device based on a lead-free double perovskite Cs2AgBiBr6 film, Pt/Cs2AgBiBr6/ITO/glass, presents obvious bipolar resistive switching behavior. The ROFF/RON ratio under 445 nm wavelength light illumination is ~100 times greater than that in darkness. A long retention capability (>2400 s) and cycle-to-cycle consistency (>500 times) were observed in this device under light illumination. The resistive switching behavior is primarily attributed to the trap-controlled space-charge-limited current mechanism caused by bromine vacancies in the Cs2AgBiBr6 medium layer. Light modulates resistive states by regulating the condition of photo-generated carriers and changing the Schottky-like barrier of the Pt/Cs2AgBiBr6 interface under bias voltage sweeping.

The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

2016 ◽  
Vol 99 ◽  
pp. 75-80
Author(s):  
Arsen Igityan ◽  
Yevgenia Kafadaryan ◽  
Natella Aghamalyan ◽  
Silva Petrosyan
Keyword(s):  
Resistive Switching ◽  
Electrode Materials ◽  
Switching Behavior ◽  
Zno Films ◽  
Lithium Content ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Glass Substrates ◽  
Ohmic Behavior ◽  
Doped Zno

Lithium (0, 1.0 and 10 at.%)-doped ZnO (LiZnO) polycrystalline thin films were deposited on Pt/SiO2, LaB6/Al2O3, Au/SiO2 and 20 at.% fluorine-doped SnO2(FTO)/glass substrates by an e-beam evaporation method. Metal/LiZnO/Metal sandwich structures were constructed by depositing different top electrodes (Ag, Al and Au) to find memristive characteristics depending on the lithium content and electrode materials. Compared with undoped and 1%Li-doped ZnO devices, the 10 at.%Li-doped ZnO (10LiZnO) device exhibits resistive switching memory. The Ag/10LiZnO/Pt and Ag/10LiZnO/LaB6 memory devices exhibit unipolar resistive switching behavior while bipolar resistive switching in Ag/10LiZnO/FTO, Au/10LiZnO/FTO and Al/10LiZnO/LaB6 structures is revealed. The dominant conduction mechanisms are explained in terms of Ohmic behavior, space charge limited current (SCLC) and Schottky emission for the URS and BRS behaviors.

scholarly journals Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Tingting Zhong ◽  
Yongfu Qin ◽  
Fengzhen Lv ◽  
Haijun Qin ◽  
Xuedong Tian
Keyword(s):  
Resistive Switching ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Resistance Switching ◽  
High Density ◽  
Switching Behavior ◽  
Photoelectrical Properties ◽  
Ito Glass ◽  
One Step ◽  
Switching Characteristics

Abstract High-density Cs2AgBiBr6 films with uniform grains were prepared by a simple one-step and low-temperature sol–gel method on indium tin oxide (ITO) substrates. An explicit tristate bipolar resistance switching behavior was observed in the Pt/Cs2 AgBiBr6/ITO/glass devices under irradiation of 10 mW/cm2 (445 nm). This behavior was stable over 1200 s. The maximum ratio of the high and low resistance states was about 500. Based on the analysis of electric properties, valence variation and absorption spectra, the resistive switching characteristics were attributed to the trap-controlled space charge-limited current mechanism due to the bromine vacancies in the Cs2AgBiBr6 layer. On the other hand, it is suggested that the ordering of the Schottky-like barrier located at Pt/Cs2AgBiBr6 affects the three-state resistance switching behavior under light irradiation. The ability to adjust the photoelectrical properties of Cs2AgBiBr6-based resistive switching memory devices is a promising strategy to develop high-density memory. Graphical Abstract

scholarly journals The Influence of Adsorption Small Molecules Atrazine on Nonvolatile Resistive Switching Behavior in Co-Al Layered Double Hydroxide Films

2020 ◽  
Author(s):  
Yanmei Sun ◽  
Li Li ◽  
Keying Shi
Keyword(s):  
Thin Films ◽  
Small Molecules ◽  
Memory Effect ◽  
Resistive Switching ◽  
Casting Process ◽  
Switching Behavior ◽  
Impregnation Method ◽  
Resistive Switching Behavior ◽  
Glass Substrates ◽  
Current Voltage

Abstract Co-Al layered double hydroxides (LDHs) thin films were prepared by drop-casting process on ITO coated glass substrates. And then the small molecule atrazine was adsorbed on the Co-Al LDHs film by impregnation method. Current-voltage characteristics revealed nonvolatile resistive switching in Co-Al LDHs adsorbed atrazine films. The Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co-Al LDHs Film has been investigated. By varying the atrazine adsorbed content in Co-Al LDHs thin films, the nonvolatile resistive switching behavior of device could be adjusted in a controlled way. Entirely different nonvolatile resistive switching characteristic, such as write-once read-many-times memory effect and rewritable memory effect are discriminable by the current-voltage curves.

scholarly journals Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films

Polymers ◽  
2021 ◽  
Vol 13 (5) ◽  
pp. 710
Author(s):  
Kai-Wen Lin ◽  
Ting-Yun Wang ◽  
Yu-Chi Chang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Indium Tin Oxide ◽  
Interface Reaction ◽  
Design Guidelines ◽  
Switching Behavior ◽  
Native Oxide ◽  
Clear Understanding ◽  
Native Oxide Layer ◽  
Ito Glass

Natural citrus thin films on an indium tin oxide (ITO)/glass substrate were synthesized using the solution method for resistive random access memory (RRAM) applications. The results indicated that the citrus memory device possessed stable resistive switching behavior. For a clear understanding of the role of the interface reaction between the top metal electrode and the citrus film, we investigated the influences of various top electrode (TE) materials on the resistive switching in TE/citrus/ITO devices. In comparison with Au/citrus/ITO and Ti/citrus/ITO devices, the Al/citrus/ITO device can be reproduced with a DC voltage of more than 100 times while only showing a slight decrease in the ON/OFF ratio. In addition, the Al/citrus/ITO device exhibited a high ON/OFF ratio of over 104 and an outstanding uniformity, which was attributed to the fast formation of a native oxide layer (AlOx), as confirmed by the line scan analysis. This indicated that the interface layer, created by the redox reaction between the Al electrode and citrus film, played an important role in the resistive switching properties of TE/citrus/ITO structures. These findings can serve as design guidelines for future bio-based RRAM devices.

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