Investigation of Ti Doping on the Structural, Optical and Magnetic Properties of ZnO Nanoparticles

2021 ◽  
Author(s):  
Raji P ◽  
K Balachandra Kumar
Keyword(s):  
Hexagonal Wurtzite Structure ◽  
Xrd Analysis ◽  
Infrared Analysis ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Absorption Bands ◽  
X Ray ◽  
Co Precipitation ◽  
Ti Doping

Abstract Ti - doped ZnO (TixZn1-xO x= 0.00, 0.05, 0.10, 0.15) nanoparticles have been synthesized through co - precipitation approach. X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), UV-Visible spectroscopy, and Vibrating Sample Magnetometer (VSM) have been used to characterize the samples. X-Ray Diffraction (XRD) analysis manifested the hexagonal wurtzite structure. The crystallite size decreased from 37 ​nm to 29 ​nm as dopant concentration is increased. Fourier transform infrared analysis showed the absorption bands of ZnO, with few within the intensities. SEM investigation showed the irregular shape and agglomeration of the particles. Ti, Zn, and O composition were determined from EDX analysis and confirmed the purity of the samples.PL spectra showed a near band edge emission and visible emission.Vibrating sample magnetometer (VSM) demonstrated pure and doped samples exhibited ferromagnetism behavior at room temperature.

Al2O3 as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD

2009 ◽  
Vol 1201 ◽  
Author(s):  
Nola Li ◽  
Shen-Jie Wang ◽  
William E. Fenwick ◽  
Andrew Melton ◽  
Chung-Lung Huang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Chemical Vapor ◽  
Shallow Donor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
X Ray ◽  
20 Nm ◽  
Related Level

AbstractGaN and InGaN layers were grown on annealed 20 and 50nm Al2O3/ZnO substrates by metalorganic chemical vapor deposition (MOCVD). GaN was only observed by high resolution x-ray diffraction (HRXRD) on 20 nm Al2O3/ZnO substrates. Room temperature photoluminescence (RT-PL) showed the red shift of the GaN near band-edge emission, which might be from oxygen incorporation forming a shallow donor-related level in GaN. HRXRD measurements revealed that (0002) InGaN layers were also successfully grown on 20nm Al2O3/ZnO substrates. In addition, thick InGaN layers (∼200-300nm) were successfully grown on Al2O3/ZnO and bare ZnO substrates. These results are significant as previous studies showed decomposition of the layer at InGaN thicknesses of 100nm or less.

scholarly journals Synthesis and Characterization of Ni2+-doped SnO2 Powders

2019 ◽  
Vol 35 (4) ◽  
Author(s):  
Trinh Thi Loan ◽  
Nguyen Ngoc Long
Keyword(s):  
Oxygen Vacancies ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Near Band Edge ◽  
X Ray Diffraction ◽  
Violet Emission ◽  
Dopant Content ◽  
X Ray ◽  
Undoped Sno2

The SnO2:Ni2+ powders with dopant contents ranging from 0.0 to 12 mol% have been synthesized by sol-gel method. The samples were characterized by X-ray diffraction (XRD) Raman spectroscopy, energy-dispersive X-ray spectrometer (EDS) and photoluminescense (PL) spectra. XRD analysis showed that samples doped with low Ni- concentrations exhibited single SnO2 crystalline phase, whereas the samples with high Ni- concentrations exhibited a mixture of SnO2 and NiO phases. The lattice parameters of the SnO2 host were independent on Ni2+ dopant content, while Raman mode positions were dependenton Ni2+ dopant content. The PL spectrum of the undoped SnO2 was characterized by the emission peaks due to near band edge (NBE) emission and the violet emission peaks associated with surface dangling bonds or oxygen vacancies and Sn interstitials.

scholarly journals Chlorapatite Derived from Fish Scales

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1129
Author(s):  
Luyara de Almeida Cavalcante ◽  
Laís Sibaldo Ribeiro ◽  
Mitsuo Lopes Takeno ◽  
Pedro Tupa Pandava Aum ◽  
Yanne Katiussy Pereira Gurgel Aum ◽  
...  
Keyword(s):  
Biomedical Applications ◽  
Xrd Analysis ◽  
Fish Scales ◽  
X Ray Diffraction ◽  
Absorption Bands ◽  
X Ray ◽  
Arapaima Gigas ◽  
Treated Fish ◽  
Different Temperatures ◽  
Increasing Temperature

The present work demonstrates the production of chlorapatite (ClAp) through thermal decomposition of chemically treated fish scales, originating from an Amazon fish species (Arapaima gigas). The scales were treated with hydrochloric acid (HCl) solution for deproteinization. Afterwards, the solution was neutralized by sodium hydroxide (NaOH) treatment to obtain an apatite-rich slurry. The heat treatment was carried out at different temperatures including 600 °C, 800 °C, and 1000 °C. The powders obtained were characterized through X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), energy-dispersive X-ray spectroscopy (EDS), and scanning electron microscopy (SEM). The XRD analysis and FTIR spectra confirmed the incorporation of chlorine into the apatite structure. The FTIR results showed absorption bands relative to the OH–, PO43− functional groups which are a characteristic of chlorapatite. Moreover, the intensity of the OH–Cl elongation could be observed. Chlorapatite Ca5(PO4)3Cl, NaCl, and NaCaPO4 phases were identified, achieving up to 87.4 wt% for ClAp. The SEM observations show that with increasing temperature, the ClAp obtained consists of slightly larger, more crystalline grains. Furthermore, the grains ranged in size, between 1-5 μm and ClAp1000 sample recorded crystallinity of 84.27%. ClAp and NaCaPO4 can be used in electronics as phosphor materials due to their luminescence and biomedical applications.

Growth and Characterization of GaN Thin Films on Si(111) Substrates Using SiC Intermediate Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
K. Y. Lim ◽  
K. J. Lee ◽  
C. I. Park ◽  
K.C. Kim ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gan Buffer Layer

AbstractGaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH4 gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH3. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using an AlN or GaN buffer layer. Compared with GaN layers grown using a GaN buffer layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The GaN films were characterized by x-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). Full width at half maximum (FWHM) of double crystal x-ray diffraction (DCXD) rocking curve for GaN (0002) on 3C-SiC/Si(111) was 890 arcsec. PL near band edge emission peak position and FWHM at room temperature are 3.38 eV and 79.35 meV, respectively.

scholarly journals Structural properties and magnetic interactions in Al3+ and Cr3+ co-substituted CoFe2O4 ferrite

2010 ◽  
Vol 8 (2) ◽  
pp. 419-425 ◽  
Author(s):  
Surendra More ◽  
Ram Kadam ◽  
Ankush Kadam ◽  
Dhanraj Mane ◽  
Govind Bichile
Keyword(s):  
Curie Temperature ◽  
Magnetic Interactions ◽  
X Ray Diffraction ◽  
Absorption Bands ◽  
X Ray ◽  
Cr Content ◽  
Phase Spinel ◽  
Cr Substitution ◽  
Xrd Patterns ◽  
Co Precipitation

AbstractA series of CoAlxCrxFe2−2xO4 systems (x = 0.1 to 0.5 in steps of x = 0.1) spinel ferrites have been synthesized successfully using wet chemical co-precipitation technique. The samples were characterized by X-ray diffraction (XRD), infrared spectroscopy (IR) and magnetization measurements. The powder XRD patterns confirm the single phase spinel structure for the materials synthesized. X -ray diffraction measurements were performed to yield the lattice constant as function of the amount x corresponding to Al-Cr substitution. Lattice parameters, X-ray density, bulk density and particle size decrease whereas porosity increases with the increase in Al-Cr content, ‘x’. Infrared studies show two absorption bands at about 400 cm−1 and 600 cm−1 for octahedral and tetrahedral sites, respectively. Saturation magnetization decreases with the increase in Al-Cr content x. AC magnetic susceptibility measurements were carried out as a function of temperature to measure the Curie temperature, which was found to decrease with Al-Cr content x. The decrease of Curie temperature has been explained by A-B interaction.

Hydrothermal Synthesis of Flower-Like ZnO Nanostructures and their Optical Properties

2013 ◽  
Vol 678 ◽  
pp. 91-96
Author(s):  
Krishnan Sambath ◽  
Manickam Saroja ◽  
Muthusamy Venkatachalam ◽  
Krishnan Rajendran ◽  
Kumaravelu Jagatheeswaran
Keyword(s):  
Visible Region ◽  
Blue Emission ◽  
Hexagonal Wurtzite Structure ◽  
Zinc Nitrate ◽  
Near Band Edge ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission

Flower-like ZnO nanostructures have been synthesized using zinc nitrate hexahydrate and hexamethylenetetramine (HMT) by a low-temperature hydrothermal technique. The prepared ZnO nanostructures exhibit hexagonal wurtzite structure, well-defined flower-like morphology, and a strong blue emission photoluminescence. Flower-like ZnO nanostructures consisting of multilayered petals are formed with the length of about 1 μm. All the flower petals exhibit the tapering feature with the root size of 300-500 nm and tip size of 50-100 nm. The prepared ZnO sample has been studied using x-ray diffraction technique, energy dispersive x-ray analysis, scanning electron microscope and FTIR spectroscopy. The photoluminescence spectrum demonstrated two emission bands, a near band edge (NBE) emission in the UV region centering at 386 nm and a high intensity deep band emission (DBE) in the visible region centering at 483 nm.

scholarly journals Synthesis and Structural Investigation of Nano-Sized Cadmium Ferrite

2016 ◽  
Vol 2 (1) ◽  
pp. 7-12 ◽  
Author(s):  
Rakesh M. Shedam ◽  
Ashok B. Gadkari ◽  
Shridhar N Mathad ◽  
Mahadev R. Shedam
Keyword(s):  
Infrared Spectroscopy ◽  
Structural Investigation ◽  
Spinel Phase ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Absorption Bands ◽  
X Ray ◽  
Ferrite Sample ◽  
Octahedral Group ◽  
Co Precipitation

This report presents the synthesis of cadmium ferrite (CdFe2O4) by Oxalate co-precipitation and its subsequent characterization by using X-ray diffraction (XRD) and Fourier transform Infrared spectroscopy (FTIR) techniques. XRD results confirm the single cubic spinel phase formation with lattice parameter 8.7561Ao. An infrared spectroscopy study shows the presence of main two absorption bands indicating the presence of tetrahedral and octahedral group complexes, respectively, within the spinel lattice. We also report strain, hopping length (LA and LB) and dislocation density  of ferrite sample.

scholarly journals Syntheses and Thermal Characterisation of Mixed (Sm-Y) Oxalates Prepared by Coprecipitation Method

2011 ◽  
Vol 8 (1) ◽  
pp. 113-117
Author(s):  
Presenjit Pauri ◽  
S. K. Ghoshal ◽  
H. S. Tewari
Keyword(s):  
Solid Solution ◽  
Thermal Decomposition ◽  
Thermal Treatment ◽  
Differential Scanning Calorimeter ◽  
Mixed Oxides ◽  
Xrd Analysis ◽  
Precipitation Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Co Precipitation

In this work, mixed (Sm1-xYx)2[C2O4]3.nH2O with x= 0.50 and 0.70 were prepared using standardized co precipitation method. All the synthesized oxalates were characterized by x-ray diffraction and differential scanning calorimeter. All the samples are homogeneous in stoichiometry. The XRD analysis of these synthesized samples reveals that a solid solution forms for these two compositions The thermal decomposition of the mixed oxalates is complex although completed a lower temperatures. This is an important result for the preparation of Sm-Y mixed oxides, because all the properties of the mixed oxides are intrinsic and depend only on their composition and thermal treatment schedules.

scholarly journals Short-Period Superlattice Structure of Sn-doped In2O3(ZnO)4 and In2O3(ZnO)5 Nanowires

2005 ◽  
Vol 879 ◽  
Author(s):  
Chan Woong Na ◽  
Seung Yong Bae ◽  
Jeunghee Park
Keyword(s):  
Peak Shift ◽  
Structural Defects ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Superlattice Structure ◽  
Short Period ◽  
Superlattice Structures

AbstractTwo longitudinal superlattice structures of In2O3(ZnO)4 and In2O3(ZnO)5 nanowires were exclusively produced by thermal evaporation method. The diameter is periodically modulated in the range of 50-90 nm. They consist of one In-O layer and five (or six) layered Zn-O slabs stacked alternately perpendicular to the long axis, with a modulation period of 1.65 (or 1.9) nm. These superlattice nanowires were doped with 6-8 % Sn. X-ray diffraction pattern reveals the structural defects of wurtzite ZnO crystals due to the In/Sn incorporation. High-resolution X-ray photoelectron spectrum suggests that In/Sn withdraw the electrons from Zn, and enhance the number of dangling-bond O 2p states, resulting in the reduction of band gap. Photoluminescence exhibit the peak shift of near band edge emission to the lower energy as the In/Sn content increases.

Synthesis and Characterization of Bi2Al4O9 Powders

2012 ◽  
Vol 624 ◽  
pp. 34-37
Author(s):  
Xiao Yan Zhang ◽  
Wen Shu Hu ◽  
Xi Wei Qi ◽  
Gui Fang Sun ◽  
Jian Quan Qi ◽  
...  
Keyword(s):  
Crystallization Process ◽  
Sol Gel ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Absorption Bands ◽  
X Ray ◽  
Oxide Powders ◽  
Sol Gel Process ◽  
Ft Ir

Bi2Al4O9 powders were prepared by sol-gel process. The precursors were heated at 500-800°C for 2h to obtain Bi2Al4O9 powder and X-ray diffraction (XRD), Differential thermal analysis (DTA), thermogravimetric analysis (TG), field emission scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FT-IR) techniques were used to characterize precursor and derived oxide powders. XRD analysis show that the powder is still amorphous after calcined at 500°C. The peaks of Bi2Al4O9 become sharp after calcined at 575°C though still existing some amorphous phase. After calcining at 675-800°C, the powder has fully turned into pure Bi2Al4O9 phase. The crystallization process can also be confirmed by DTA-TG and IR. Calcining the precursor at 575°C, the absorption bands at 527 cm-1, 738 cm-1, 777 cm-1, and 919 cm-1are observed, which are assigned to Bi2Al4O9 and becoming stronger and sharper with the increase of temperature.

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