scholarly journals The Effect of Increased Methane Flow Rate on Electronic Correlation of Amorphous Silicon Carbon (a-SiC: H)

2021 ◽  
Author(s):  
soni Prayogi ◽  
Ayunis Sholehah ◽  
Yoyok Cahyono ◽  
Darminto D
Keyword(s):  
Refractive Index ◽  
Flow Rate ◽  
Indium Tin Oxide ◽  
Complex Refractive Index ◽  
Chemical Vapor ◽  
Type A ◽  
Electronic Correlation ◽  
Type Layer ◽  
P Type ◽  
Methane Flow

Abstract In this study, we report for the first time that the addition of methane (CH4) flow rate in the p-type a-SiC: H layer greatly affects the electronic correlation in increasing the conversion efficiency of solar cells. The a-SiC: H p-type layer was grown using Plasma Enhanced Chemical Vapor Deposition (PECVD) on Indium Tin Oxide (ITO) substrate with various methane flow rates. The a-SiC: H p-type layer was characterized including the complex dielectric properties and the complex refractive index using Ellipsometric Spectroscopy (ES), while the surface roughness morphology was used Atomic Force Microscopy (AFM). In sample P-2 there is a change in the form of a decrease in the value of the refractive index < n > and the E0 energy in the lower energy compared to the P-1 sample with a change of 0.3 eV, an increase in the optical gap and a decrease in the value of the real and imaginary dielectric function. While the influence of an increase in the carbon composition of the amorphous network order shows the addition of amorphous tissue disorder. Our results, show that the optical magnitude of the p-type a-SiC: H layer is not only affected by the amount of carbon in the film but also the hydrogen which is thought to contribute.

Optical Transmission of p-Type a-Si:H Thin Film Deposited by PECVD on ITO-Coated Glass

2019 ◽  
Vol 966 ◽  
pp. 72-76
Author(s):  
Soni Prayogi ◽  
Malik Anjelh Baqiya ◽  
Yoyok Cahyono ◽  
Darminto
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Transmission Spectrum ◽  
Chemical Vapor ◽  
Type A ◽  
Deposition Process ◽  
Atomic Force ◽  
Frequency Plasma ◽  
Large Period ◽  
P Type

A p-type thin film of hydrogenated amporphous silicon (a-Si:H) has successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique. Substrate used in the deposition process is indium tin oxide (ITO) layer coated having size of 10 x10 cm2 and being cleaned with 97% alcohol using ultrasonic bath. According to Atomic Force Microscope (AFM) observation, the layer thickness of p-type a-Si: H film was 150 nm. The Transmission spectrum at room temperature obtained from UV-Vis measurement demonstrates a large period modulation, which is due to the interference within the film. At wavelength longer than 1000 nm (or energy <1 eV), the interference modulation in the transmission spectrum of the film is seen to broaden. It is shown in a zoomed - scale around the related band gap area that one may find an exciton structure.

scholarly journals Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Sunhwa Lee ◽  
Seungman Park ◽  
Jinjoo Park ◽  
Youngkuk Kim ◽  
Hyeongsik Park ◽  
...  
Keyword(s):  
Solar Cell ◽  
Spectroscopic Study ◽  
Type A ◽  
Si Solar Cell ◽  
Type Layer ◽  
P Type

Magnesium Doping of GaN by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Hongqiang Lu ◽  
Ishwara Bhat
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Base Layer ◽  
Magnesium Doping ◽  
Acceptor Concentration ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTP-type GaN films were grown on sapphire substrates in a horizontal metalorganic chemical vapor deposition system using (C5H5)2Mg (Cp2Mg) as the p-dopant source. It is found that the acceptor concentration in the post-growth annealed GaN samples increases with the Mg flow rate and reaches a peak value of 1×1019 cm−3 at Mg flow rate of 0.84 ĉmol/min. The films remain semi-insulating even after annealing when the Mg flow rate is higher than 1.08 ĉmol/min. The effects of annealing temperature and duration on the electrical properties of GaN are also investigated. The results confirm that a 800 °C, 30 minutes post-growth annealing in N2 ambient is sufficient to activate most of the Mg atoms. In addition, study of rapid thermal annealing of Mg-doped GaN was carried out and the results show that the p-type acceptor concentration obtained is comparable to the results obtained using furnace annealing process. Finally, GaN light emitting diodes (LEDs) are demonstrated using undoped layer as the n-type base layer in a p-on-n structure. The light emission spectra are dominated by the 430 nm peak, accompanied with two relatively weak peaks located at 380nm and 550nm.

Characterization Of Boron Films Prepared By Chemical Vapor Deposition And Their Application In X-Ray Imaging

1993 ◽  
Vol 306 ◽  
Author(s):  
Fang Yuan ◽  
David D. Allred
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Energy Gap ◽  
Complex Refractive Index ◽  
Chemical Vapor ◽  
Amorphous Semiconductor ◽  
X Ray ◽  
X Ray Imaging

AbstractBoron, a low Z element, is useful for x-ray optics since it has a low atomic absorption coefficient. Boron films prepared by chemical vapor deposition were characterized optically, electronically and mechanically. Auger, infrared and hydrogen effusion analyses showed that the films are amorphous hydrogenated boron. The hydrogen content ranges from 8–71%. The measurements of the complex refractive index and the resistance vs. temperature determined that they are a typical amorphous semiconductor with the energy gap ranging from 1.09 to 1.36 eV, decreasing with increasing hydrogen content and with the Fermi energy level pinned about midgap. The real refractive index at 490 nm increases from 3.25–3.59 with increasing hydrogen content. The Young's modulus and hardness were found to be 3.05 × 1013 dyne/cm2 and around 2500 Vickers, respectively. The chemical tests suggested that boron films are stable in nonoxidizing bases and concentrated acids. Some oxidizing bases such as basic ferricyanide and permanganate solutions are good etchants for CVD boron films. Boron coated beryllium x-ray windows which have enhanced resistance to degradation are now commercially available, and self-supporting boron windows are potential future products for x-ray imaging.

Characterization of a‐SiNx Thin Film Deposited By Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

1996 ◽  
Vol 446 ◽  
Author(s):  
Sang‐Soo Han ◽  
Byung‐Hyuk Jun ◽  
Kwangsoo No ◽  
Byeong‐Soo Bae
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Rf Power ◽  
Inductively Coupled

AbstractSilicon nitride thin films are deposited at low temperature using the inductively coupled plasma enhanced chemical vapor deposition.(ICP‐CVD) N2 and SiH4 gases are used as reactant gases for deposition of silicon nitride thin films with low hydrogen content. Composition, refractive index, and hydrogen content of the films were examined with variation of N2 flow rate, RF power and substrate temperature. As N2 flow rate and RF power increase and substrate temperature is lowered, N/Si ratio is reduced producing higher refractive index of the film. Hydrogen content of the films is calculated by FTIR spectroscopy and is much less than those of the films deposited by conventional PECVD using SiH4/N2 gases since N2 gas is used instead of NH3 gas. Total hydrogen content is constant regardless of RF Power and N2 flow rate. However, the hydrogen content decreases with increasing substrate temperature due to the release of hydrogen at high temperature.

On the asymmetric evolution of the optical properties of a conjugated polymer during electrochemical p- and n-type doping

2017 ◽  
Vol 5 (19) ◽  
pp. 4706-4715 ◽  
Author(s):  
T. Lanz ◽  
E. M. Lindh ◽  
L. Edman
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Conjugated Polymer ◽  
Complex Refractive Index ◽  
Electrochemical Doping ◽  
P Type

The complex refractive index of a conjugated polymer is measured during electrochemical doping, and the response to p-type and n-type doping is highly asymmetric.

scholarly journals Study on the deposition of amorphous silicon and ito thin films for heterojunction solar cell application

2013 ◽  
Vol 16 (1) ◽  
pp. 101-111
Author(s):  
Chien Mau Dang ◽  
Tung Thanh Bui ◽  
Hung Thanh Le ◽  
Vu Ngoc Hoang ◽  
Linh Ngoc Tran ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Sheet Resistance ◽  
Indium Tin Oxide ◽  
High Efficiency ◽  
Cell Structure ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Ito Thin Films ◽  
P Type

In the heterojunction with intrinsic thin-layer (HIT) solar cell structure studied in this work, an intrinsic amorphous silicon (a-Si) layer followed by a n-type amorphous silicon was deposited on a p-type Czochralski (CZ) monocrystalline silicon (c-Si) wafer by plasma enhanced chemical vapor deposition (PECVD) method to form an heterojunction device. Then, indium tin oxide (ITO) layer was formed by DC magnetron sputtering as the top electrode and the anti-reflection coating layer. In order to obtain the high efficiency heterojunction structure, two important aspects were focused: improving the passivation properties of a-Si/c-Si heterojunction and reducing the light absorption and the sheet resistance of ITO layers. It was found that hydrogenated amorphous silicon (a- Si:H) layers can be grown at low substrate temperature, about 200°C. High-quality ITO layers with the sheet resistance less than 15 ohm/sq and the transmittance of about 70%, can be deposited at relatively low DC power (50W).

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