scholarly journals Screening of Antifungal Substances from Bovistella Radicata (Mont.) Pat and Their Antifungal Effect

2020 ◽  
Author(s):  
Yong Ye ◽  
Qinghua Zeng ◽  
Kun Liu ◽  
zeng qingmei
Keyword(s):  
Tinea Pedis ◽  
Positive Control ◽  
Tem Analysis ◽  
Active Compounds ◽  
Alcohol Extract ◽  
Antifungal Effect ◽  
Transmission Electron ◽  
Antifungal Substances ◽  
Altered Surface ◽  
Main Component

Abstract Background To analyse the antifungal active compounds in B. radicata alcohol extract, the alcohol extract was purified by column chromatography (macroporous resinD-101) and the active compounds was named as SPAF-1(the spore powder active fraction). Results Alcohol extracts and SPAF-1 were submitted to GC-MS analysis, there were two characteristic peaks(peak1 and peak2) in Gas chromatogram. By comparing in NIST, the compound were 2-propyl-1-pentanol corresponding to peak1 and decanal, n-decanol and 2E-decanol corresponding to peak2. The main constituents were decanal(24.3%) n-decanol(27.9%), 2E-decenol (21.2%) and 2-Propyl-1-pentanol (13.6%). Their MIC values were 62.5 µg/ml, 31.2 µg/ml, 31.2 µg/ml and 250 µg/ml against T. rubrum respectively. Furthermore, transmission electron microscope (TEM) analysis showed altered surface morphology in the majority of T. rubrum cells after treatment with SPAF-1. Conclusions In this paper, we successfully separate SPAF-1 from alcohol extract of B. radicata. The antifungal effect of SPAF-1 is similar to positive control, the main component were decanal, n-decanol, 2E-decenol and 2-Propyl-1-pentanol, the anti-tinea pedis effect of them was obvious.

TEM Analysis of Long-Period Polytypes in SiC—S

1976 ◽  
Vol 34 ◽  
pp. 630-631
Author(s):  
S. Shinozaki ◽  
J. W. Sprys
Keyword(s):  
Electron Diffraction ◽  
Isothermal Annealing ◽  
Tem Analysis ◽  
Long Period ◽  
Transmission Electron ◽  
Average Grain Size ◽  
High Resolution Tem ◽  
Structural Lattice ◽  
The Stability ◽  
Continuous Curves

In reaction sintered SiC (∽ 5um average grain size), about 15% of the grains were found to have long-period structures, which were identifiable by transmission electron microscopy (TEM). In order to investigate the stability of the long-period polytypes at high temperature, crystal structures as well as microstructural changes in the long-period polytypes were analyzed as a function of time in isothermal annealing.Each polytype was analyzed by two methods: (1) Electron diffraction, and (2) Electron micrograph analysis. Fig. 1 shows microdensitometer traces of ED patterns (continuous curves) and calculated intensities (vertical lines) along 10.l row for 6H and 84R (Ramsdell notation). Intensity distributions were calculated based on the Zhdanov notation of (33) for 6H and [ (33)3 (32)2 ]3 for 84R. Because of the dynamical effect in electron diffraction, the observed intensities do not exactly coincide with those intensities obtained by structure factor calculations. Fig. 2 shows the high resolution TEM micrographs, where the striped patterns correspond to direct resolution of the structural lattice periodicities of 6H and 84R structures and the spacings shown in the figures are as expected for those structures.

Transmission Electron Microscopy of an Aluminum-Silver-Stainless Steel Solid State Bond

1985 ◽  
Vol 43 ◽  
pp. 172-173
Author(s):  
M. J. Carr ◽  
J. F. Shewbridge ◽  
T. O. Wilford
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Specimen Preparation ◽  
Dimensional Control ◽  
Tem Analysis ◽  
Metal Parts ◽  
Dissimilar Metal ◽  
Transmission Electron ◽  
Short Time

Strong solid state bonds are routinely produced between physical vapor deposited (PVD) silver coatings deposited on sputter cleaned surfaces of two dissimilar metal parts. The low temperature (200°C) and short time (10 min) used in the bonding cycle are advantageous from the standpoint of productivity and dimensional control. These conditions unfortunately produce no microstructural changes at or near the interface that are detectable by optical, SEM, or microprobe examination. Microstructural problems arising at these interfaces could therefore easily go undetected by these techniques. TEM analysis has not been previously applied to this problem because of the difficulty in specimen preparation. The purpose of this paper is to describe our technique for preparing specimens from solid state bonds and to present our initial observations of the microstructural details of such bonds.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Utilizing Nanoprobing and Circuit Diagnostics to Identify Key Failure Mechanism of Otherwise Nonvisible Defects in 20 nm Logic Devices

2014 ◽  
Author(s):  
M.K. Dawood ◽  
C. Chen ◽  
P.K. Tan ◽  
S. James ◽  
P.S. Limin ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Contact Layer ◽  
Fault Isolation ◽  
Tem Analysis ◽  
Logic Devices ◽  
Technology Advancement ◽  
Transmission Electron ◽  
Voltage Contrast ◽  
Almost All ◽  
20 Nm

Abstract In this work, we present two case studies on the utilization of advanced nanoprobing on 20nm logic devices at contact layer to identify the root cause of scan logic failures. In both cases, conventional failure analysis followed by inspection of passive voltage contrast (PVC) failed to identify any abnormality in the devices. Technology advancement makes identifying failure mechanisms increasingly more challenging using conventional methods of physical failure analysis (PFA). Almost all PFA cases for 20nm technology node devices and beyond require Transmission Electron Microscopy (TEM) analysis. Before TEM analysis can be performed, fault isolation is required to correctly determine the precise failing location. Isolated transistor probing was performed on the suspected logic NMOS and PMOS transistors to identify the failing transistors for TEM analysis. In this paper, nanoprobing was used to isolate the failing transistor of a logic cell. Nanoprobing revealed anomalies between the drain and bulk junction which was found to be due to contact gouging of different severities.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

Sample Preparation and Preservation for TEM Analysis of Copper Interconnect Integrated Circuit

2004 ◽  
Author(s):  
Qiang Gao ◽  
Mark Zhang ◽  
Ming Li ◽  
Chorng Niou ◽  
W.T. Kary Chien
Keyword(s):  
Integrated Circuit ◽  
Thermal Exposure ◽  
Ambient Atmosphere ◽  
Ion Milling ◽  
Tem Analysis ◽  
Single Beam ◽  
Copper Interconnect ◽  
Beam Modulation ◽  
Area Of Interest ◽  
Transmission Electron

Abstract This paper examines copper-interconnect integrated circuit transmission electron microscope (TEM) sample contamination. It investigates the deterioration of the sample during ion milling and storage and introduces prevention techniques. The paper discusses copper grain agglomeration issues barrier/seed step coverage checking. The high temperature needed for epoxy solidifying was found to be harmful to sidewall coverage checking of seed. Single beam modulation using a glass dummy can efficiently prevent contamination of the area of interest in a TEM sample during ion milling. Adoption of special low-temperature cure epoxy resin can greatly reduce thermal exposure of the sample and prevent severe agglomeration of copper seed on via sidewall. TEM samples containing copper will deteriorate when stored in ordinary driers and sulphur contamination was found at the deteriorated point on the sample. Isolation of the sample from the ambient atmosphere has been verified to be very effective in protecting the TEM sample from deterioration.

scholarly journals Structural Analysis of Jumbo Coliphage phAPEC6

2020 ◽  
Vol 21 (9) ◽  
pp. 3119 ◽  
Author(s):  
Jeroen Wagemans ◽  
Jessica Tsonos ◽  
Dominique Holtappels ◽  
Kiandro Fortuna ◽  
Jean-Pierre Hernalsteens ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Capsid Protein ◽  
Tem Analysis ◽  
Host Interaction ◽  
Cryo Electron Microscopy ◽  
Transmission Electron ◽  
Tail Sheath ◽  
Associated Proteins ◽  
Contractile Tail ◽  
Phage Capsid

The phAPEC6 genome encodes 551 predicted gene products, with the vast majority (83%) of unknown function. Of these, 62 have been identified as virion-associated proteins by mass spectrometry (ESI-MS/MS), including the major capsid protein (Gp225; present in 1620 copies), which shows a HK97 capsid protein-based fold. Cryo-electron microscopy experiments showed that the 350-kbp DNA molecule of Escherichia coli virus phAPEC6 is packaged in at least 15 concentric layers in the phage capsid. A capsid inner body rod is also present, measuring about 91 nm by 18 nm and oriented along the portal axis. In the phAPEC6 contractile tail, 25 hexameric stacked rings can be distinguished, built of the identified tail sheath protein (Gp277). Cryo-EM reconstruction reveals the base of the unique hairy fibers observed during an initial transmission electron microscopy (TEM) analysis. These very unusual filaments are ordered at three annular positions along the contractile sheath, as well as around the capsid, and may be involved in host interaction.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Lignin distribution in waterlogged archaeological Picea abies (L.) Karst degraded by erosion bacteria

Holzforschung ◽  
2014 ◽  
Vol 68 (7) ◽  
pp. 791-798 ◽  
Author(s):  
Nanna Bjerregaard Pedersen ◽  
Uwe Schmitt ◽  
Gerald Koch ◽  
Claus Felby ◽  
Lisbeth Garbrecht Thygesen
Keyword(s):  
Picea Abies ◽  
Lignin Content ◽  
Middle Lamella ◽  
Uv Absorbance ◽  
Tem Analysis ◽  
Lignin Distribution ◽  
Transmission Electron ◽  
Residual Material ◽  
Ray Parenchyma Cells ◽  
Very High

Abstract The lignin distribution in poles of waterlogged archaeological Picea abies (L.) Karst, which was decayed by erosion bacteria (EB) under anoxic conditions for approximately 400 years, was topochemically identified by transmission electron microscopy (TEM) and high resolution UV-microspectrophotometry (UMSP). Lignin rich cell wall compartments such as cell corner (CC), compound middle lamella (CML), torus, initial pit border and mild compression wood (CW) appeared morphologically well preserved together with S1 and S3 layers and epithelial and ray parenchyma cells. Residual material (RM) from degraded S2 showed a varied lignin distribution as evidenced by the different local UV-absorbance intensities. However, evaluation of UV-absorbance line spectra of RM revealed no change in conjugation of the aromatic ring system. Presence of RM with both very low and very high lignin absorbances showed evidence for disassembly of lignin during degradation combined with aggregation of lignin fragments and physical movement of these fractions. In contrast to TEM analysis, locally decreasing lignin content was found by UMSP in CML regions.

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