scholarly journals Process dependent strain behaviour, fractal analysis, and bonding network of nc-Si(SiC) thin films

2021 ◽  
Author(s):  
Bibhu Prasad Swain
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Substrates ◽  
Sem Images ◽  
Thermal Chemical Vapor Deposition ◽  
Strain Behaviour ◽  
Dependent Strain ◽  
P Type

Abstract Nanocrystalline silicon embedded silicon carbide, nc-Si(SiC) thin films were deposited on p-type silicon substrates by using a thermal chemical vapor deposition (CVD) with different process temperatures varied from 700-1000oC. The SEM images reveal the Si particles are embedded with SiC thin films. The estimated lattice-strainof nc-Si(SiC) thin films from Williamson-Hall and Scherer formula was varied from 0.00227 to 0.00469 and 0.000855 to 0.00574 respectively. The Raman signature at the 1346.19 cm− 1, 1491.78 cm− 1 and 1570.94 cm− 1 bonding correspond to D, G-Si and G peaks respectively. The estimated band gap from Tauc’s plot of nc-Si(SiC) thin films are 3.17 to 2.87 eV respectively with increasing of process temperature. The observed crystalline size of nc-Si in nc-Si(SiC) is from 21 nm to 27 nm from 700 to 1000 oC respectively. The possible bonding network of core-orbital of Si(2p), C(1s), and O(1s) in the C: ZnO thin films have been discussed by deconvolution with the Origin 2018.

Nanocrystalline Silicon Films with High Conductivity Prepared by Hot Wire Chemical Vapor Deposition

2012 ◽  
Vol 152-154 ◽  
pp. 513-518
Author(s):  
Chueh Yang Liu ◽  
Yao Ting Yun ◽  
Ping Chen Hsieh ◽  
Jen Ken Hsu ◽  
Shui Yang Lien
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Dark Conductivity ◽  
Hot Wire ◽  
P Type ◽  
Doping Ratio

Nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD). We report on the effects of B2H6 doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by HWCVD at low substrate temperature of 200 °C. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B2H6 ratio, crystalline volume fraction, optical band gap and dark conductivity. Characterization of these films from Raman spectroscopy revealed that the high conductive film consists of mixed phase of nanocrystalline silicon embedded in an amorphous network. A small increase in B2H6 doping ratio showed marked effect on film microstructure. At the optimal condition, high dark conductivity (8 S/cm) with high optical band gap (~2.0 eV) was obtained.

scholarly journals Synthesis of diamond thin films by atmospheric-pressure thermal chemical vapor deposition and their characterization.

Shinku ◽  
1987 ◽  
Vol 30 (2) ◽  
pp. 60-68
Author(s):  
Yoichi HIROSE ◽  
Yuki TERASAWA ◽  
Kazuya IWASAKI ◽  
Katumi TAKAHASHI ◽  
Kazuo TEZUKA
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Diamond Thin Films

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament

Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes

2009 ◽  
Vol 1153 ◽  
Author(s):  
Yuri Vygranenko ◽  
Ehsanollah Fathi ◽  
Andrei Sazonov ◽  
Manuela Vieira ◽  
Gregory Heiler ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Chemical Vapor ◽  
Percolation Cluster ◽  
Nanocrystalline Silicon ◽  
Film Structure ◽  
Silicon Thin Films ◽  
Low Leakage ◽  
In Doping ◽  
P Type

AbstractWe report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1%. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25% at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhanced p-i-n photodiode with an nc-Si p-layer was also fabricated and characterized.

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