scholarly journals Piezoelectric Response in WO3-x Thin Films by Aluminum Clustering

2021 ◽  
Author(s):  
Pamela Pineda-Domínguez ◽  
Manuel Ramos ◽  
John Nogan ◽  
Oscar Alberto López-Galán ◽  
José Luis Enríquez-Carrejo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Annealing Treatment ◽  
Grazing Incidence ◽  
Atom Probe ◽  
Piezoelectric Response ◽  
Air Atmosphere ◽  
Atomic Force ◽  
Aluminum Ions ◽  
Xps Characterization

Abstract We report piezoelectric response of d33 = 35 ± 5 pm V− 1 on aluminum doped tungsten trioxide thin films (Al-WO3 − x), prepared by RF-sputtering and post annealing treatment in air atmosphere. Using XPS characterization indicate a stoichiometry of WO2.7 and Raman a distorted octahedral tungsten vibration mode of monoclinic WO3 at 236.9 cm− 1, 691 cm− 1 and 803 cm− 1 corresponding to O-W-O chemical bonds. The grazing incidence X-ray diffraction revealed a non-centrosymmetric monoclinic (P21/c) and tetragonal (P4/nmm) mixed phases of WO3 − x with islands of piezoelectric domains as observed by atomic force microscope, additionally atom probe tomography revealed diffusion of aluminum ions from Al2O3 substrate.

DIRECT GROWTH OF EPITAXIAL La0.67Ca0.33MnO3 - δ THIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1611-1615 ◽  
Author(s):  
G. CAMPILLO ◽  
L. F. CASTRO ◽  
P. VIVAS ◽  
E. BACA ◽  
P. PRIETO ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Electrical Characterization ◽  
Annealing Treatment ◽  
Pure Oxygen ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Afm Analysis ◽  
Direct Growth

La 0.67 Ca 0.33 MnO 3 - δ thin films were deposited using a high-pressure dc-sputtering process. Pure oxygen at a pressure of 3.8 mbar was used as sputtering gas. The films were grown on (001) LaAlO 3 and (001) SrTiO 3 substrates at heater temperature of 850° without any annealing treatment. The formation of highly a-axis-oriented films with sharp interface with substrate surface is demonstrated by X-ray diffraction, transmission electron microscope (TEM), and atomic force microscope (AFM) analysis. Electrical characterization revealed a metal–insulator transition at T MI = 276 K, and magnetic characterization showed good magnetic properties with a PM–FM transition at TC ≈ 262 K.

scholarly journals Annealing-Induced Modifications in Physicochemical and Optoelectronic Properties of Ag-Doped Nanostructured CdS Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Vidya S. Taur ◽  
Rajesh A. Joshi ◽  
Ramphal Sharma
Keyword(s):  
Thin Films ◽  
Annealing Treatment ◽  
Cost Effective ◽  
Peak Position ◽  
Optoelectronic Properties ◽  
Sem Images ◽  
X Ray ◽  
Optical Absorbance ◽  
Air Atmosphere ◽  
Cds Thin Films

The Ag-doped nanostructured CdS thin films are grown by simple, cost effective chemical ion exchange technique at room temperature on ITO-coated glass substrate. These as grown thin films are annealed at 100, 200, 300, and 400°C in air atmosphere for 1 hour. To study the effect of annealing on physicochemical and optoelectronic properties, these as grown and annealed thin films are characterized for structural, compositional, morphological, optical, and electrical properties. X-ray diffraction (XRD) pattern reveals polycrystalline nature of these thin films with increase in crystallite size from 6.4 to 11.2 nm, from XRD the direct identification of Ag doping in CdS thin films cannot be judged, while shift in characteristics peak position of CdS is observed. The Raman spectrum represents increase in full width at half maxima and intensity of characteristic peak, confirming the material modification upon annealing treatment. Presence of Cd, Ag, and S in energy dispersive X-ray analysis spectra (EDAX) confirms expected elemental composition in thin films. Scanning electron microscopy (SEM) images represent grain growth and agglomeration upon annealing. Red shift in optical absorbance strength and energy band gap values from 2.28 to 2.14 eV is obtained.I-Vresponse obtained from as grown and annealed thin films shows an enhancement in photosensitivity from 72% to 96% upon illumination to 100 mW/cm2light source.

Effect of Stress-induced Magnetic Anisotropy on the Properties of Giant Magnetostrictive Single Layer and Multilayer Thin Films

2004 ◽  
Vol 855 ◽  
Author(s):  
J. H. Tan ◽  
V. H. Guerrero ◽  
R. C. Wetherhold ◽  
W. A. Anderson
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Anisotropy ◽  
Rf Sputtering ◽  
Single Layer ◽  
Annealing Treatment ◽  
Deposition Process ◽  
Vacuum System ◽  
Internal Stresses ◽  
Sensors And Actuators

ABSTRACTGiant magnetostrictive thin films deposited on nonmagnetic substrates can constitute effective sensors and actuators for microdevices. In this work, we investigated the effects of a stress-induced anisotropy on the magnetic properties of Tb0.4Fe0.6, Fe0.5Co0.5 single layer films and [Tb0.4Fe0.6/Fe0.5Co0.5]n multilayers deposited on Si substrates. The magnetostrictive thin films were fabricated by means of RF sputtering and were subjected to a post-deposition annealing treatment. The uniaxial magnetic anisotropy was induced by bending the substrate before deposition and then allowing it to resume its original flat shape after depositing the film. The heat treatment was performed in a vacuum system with a vacuum of 10−6 Torr. The magnetic properties of the fabricated specimens were measured using a SQUID. SEM and XRD analyses were performed to ensure that the thermal treatment would relax the internal stresses induced during the deposition process without crystallizing the film. The thickness of the single layer thin films studied was between 300 and 800 nm while multilayer samples consisted of 6 layers with each layer thickness ranged from about 20 to 40 nm. Compared to single layer samples, multilayer samples with stress anneal growth exhibited an improvement in magnetic saturation by a factor of two while maintaining a low coercive field. Manipulations of the magnitude and direction of magnetic anisotropy was observed by introducing various values of tensile and compressive stress into the film.

scholarly journals Thin-film morphologies of block copolymers with nanoparticles

2015 ◽  
Vol 30 (S1) ◽  
pp. S16-S24 ◽  
Author(s):  
Dieter Jehnichen ◽  
Doris Pospiech ◽  
Peter Friedel ◽  
Guping He ◽  
Alessandro Sepe ◽  
...  
Keyword(s):  
Thin Films ◽  
Diblock Copolymers ◽  
Grazing Incidence ◽  
Polymer Surfaces ◽  
Nanostructured Surfaces ◽  
Force Microscopy ◽  
Molar Ratios ◽  
X Ray Scattering ◽  
Atomic Force

Diblock copolymers (BCPs) show phase separation on mesoscopic length scales and form ordered morphologies in both bulk and thin films, the latter resulting in nanostructured surfaces. Morphologies in thin films are strongly influenced by film parameters, the ratio of film thickness and bulk domain spacing. Laterally structured polymer surfaces may serve as templates for controlled assembly of nanoparticles (NPs). We investigated the BCP of poly(n-pentyl methacrylate) and poly(methyl methacrylate) which show bulk morphologies of stacked lamellae or hexagonally packed cylinders. Thin films were investigated by atomic force microscopy and grazing-incidence small-angle X-ray scattering. For film thicknesses f well below dbulk, standing cylinder morphologies were observed in appropriate molar ratios, while film thicknesses around and larger than dbulk resulted in cylinders arranged parallel to surface. To alter and/or improve the morphology also in presence of different NPs (e.g., silica, gold), solvent vapour annealing (SVA) was applied. The BCP morphology usually remains unchanged but periodicities change depending on type and amount of incorporated NPs. It was found that silica clusters enlarge lateral distances of cylinders, whereas Au NPs reduce it. The effect of SVA is weak. The quality of morphology is slightly improved by SVA and lateral distances remain constant or are slightly reduced.

Deposition and Characterization of MgO Thin Films on SrTiO3 and LaAlO3 Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
Bertha P. Chang ◽  
Neville Sonnenberg ◽  
Michael J. Cima
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Electron Beam Evaporation ◽  
Substrate Material ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies

ABSTRACTMgO thin films have been deposited on SrTiO3 and LaA1O3 substrates using both off-axis rf magnetron sputtering and electron beam evaporation techniques. The effects of substrate material, temperature, film thickness, deposition rate, sputtering gas, and pressure on the quality of the MgO films produced have been studied. Films deposited on (100) SrTiO3 at temperatures > 300°C display only the (h00) reflections in their X-ray diffraction traces, with narrow X-ray rocking curve measurements indicating that these films are epitaxial. Epitaxy has been confirmed with grazing incidence diffraction. MgO films deposited on (100) LaAlO3 are crystalline, but have varying orientations depending on the film thickness. From scanning electron microscopy, MgO films on SrTiO3 substrates appear smooth and dense while those deposited on LaAlO3 substrates possess rougher surfaces. Surface morphologies have been analyzed using atomic force microscopy.

Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon

2014 ◽  
Vol 974 ◽  
pp. 116-120
Author(s):  
Q.Z. Mehdi ◽  
Gurumurthy Hegde ◽  
Mohamad Ashry Bin Juusoh ◽  
Jinan B. Al-Dabbagh ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Gas Flow ◽  
Rf Sputtering ◽  
Annealing Treatment ◽  
Visible Spectrum ◽  
Cost Effective ◽  
Morphological Properties ◽  
Argon Gas ◽  
Glass Substrates

Indium tin oxide (ITO) thin films of 150 nm thickness were deposited on quartz glass substrates by RF sputtering technique, followed by thermal annealing treatment. In this technique, the samples have been annealed at different temperature, 300OC, 400OC, 500OC respectively in Argon gas flow. Structural and surface morphological properties were analyzed by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM) after annealing. The XRD showed a polycrystalline structure of ITO film with maximum peak intensity at 2θ= 30.54, <222> orientation without any change in the cubic structure. Continuous and homogeneous films obtained by the AFM after annealing treatment. The visible spectrum from the spectrophotometer showed high transparency between 81% and 95% in the. Increasing the annealing temperature yields evenly distributed pyramidal peaks shaped particles with low roughness. Resistance of ITO thin film was significantly improved from 8.75 kΩ to 1.96 kΩ after 10 minute from 300OC to 500OC annealing temperatures respectively under Argon gas flow. ITO films physical properties would be well improved by this method which is highly suitable for cost effective photonic devices.

Characterization of sputtered iridium dioxide thin films

1998 ◽  
Vol 13 (5) ◽  
pp. 1318-1326 ◽  
Author(s):  
P. C. Liao ◽  
W. S. Ho ◽  
Y. S. Huang ◽  
K. K. Tiong
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Rf Sputtering ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Iridium Dioxide ◽  
Atomic Force ◽  
Average Grain Size

Iridium dioxide (IrO2) thin films, deposited on Si substrates by reactive rf sputtering method under various conditions, were characterized by atomic force microscopy (AFM), x-ray diffraction (XRD), electrical-conductivity, spectrophotometry, ellipsometry and Raman scattering measurements. The average grain sizes of the films were estimated by AFM. A grain boundary scattering model was used to fit the relation between the average grain size and electrical resistivity. The optical and dielectric constants were determined by the ellipsometry measurements. The results of the electrical and optical studies show a metallic character of the films deposited at higher temperatures. The results of XRD and Raman scattering indicate that the IrO2 films deposited at temperatures higher than 300 °C show the presence of (200) texture.

Fabrication and Characterization of MgAl2O4 Thin Films by Sol-Gel Method

2011 ◽  
Vol 216 ◽  
pp. 514-517 ◽  
Author(s):  
Cheng Hsing Hsu ◽  
Jenn Sen Lin ◽  
His Wen Yang
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Annealed Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Force Microscopy ◽  
Microstructure Characteristics ◽  
Atomic Force ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various annealing temperatures. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by scanning electron microscopy and atomic force microscopy. The dependence of the dielectric properties and microstructure characteristics on annealing temperature was also investigated.

Raman and XPS characterization of vanadium oxide thin films deposited by reactive RF sputtering

1999 ◽  
Vol 56 (3-4) ◽  
pp. 249-258 ◽  
Author(s):  
E. Cazzanelli ◽  
G. Mariotto ◽  
S. Passerini ◽  
W.H. Smyrl ◽  
A. Gorenstein
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Rf Sputtering ◽  
Oxide Thin Films ◽  
Xps Characterization ◽  
Vanadium Oxide Thin Films
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