scholarly journals New 4H-SiC Metal Semiconductor Field Effect Transistors with Double Symmetric Step Buried Oxide Layer for High Energy Efficiency Applications

2021 ◽  
Author(s):  
Shunwei Zhu ◽  
Hujun Jia ◽  
Mengyu Dong ◽  
Xiaowei Wang ◽  
Yintang Yang
Keyword(s):  
Energy Efficiency ◽  
Electric Field ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Energy ◽  
Power Added Efficiency ◽  
Buried Oxide ◽  
High Energy Efficiency

Abstract A novel 4H-SiC metal semiconductor field effect transistor (MESFET) device with double symmetric step buried oxide layer is proposed and the mechanism is studied through TCAD simulation. The step buried oxide layer is mainly to reduce the current leakage to the substrate and improve drain current. At the same time, the presence of the oxide layer changes the electric field distribution, reduces the electric field concentration phenomenon, and the breakdown voltage is improved. Due to the presence of the step buried oxide layer, the charge distribution of the device is changed, and the frequency characteristics are improved. When the step buried oxide channel is under the optimized parameter condition, compared with the traditional double-recessed structure 4H-SiC MESFET (DR 4H-SiC MESFET), the direct current (DC) characteristics of the new structure are improved, and the breakdown voltage is increased by 14% to reach 183 V. In radio frequency (RF) characteristics, cut-off frequency is 24.4 GHz, an increase of 11.9 %; maximum operating frequency is 63.9 GHz, an increase of 20.3%; the maximum power added efficiency (PAE) in the L-band and S-band reaches 63.5 %, PAE is 23.7 % higher than the DR structure. At the end of this paper, the new structure is verified for high-energy-efficiency, and the results show that the new structure has great potential in high-frequency applications.

scholarly journals Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 444 ◽  
Author(s):  
Shunwei Zhu ◽  
Hujun Jia ◽  
Tao Li ◽  
Yibo Tong ◽  
Yuan Liang ◽  
...  
Keyword(s):  
Energy Efficiency ◽  
Buffer Layer ◽  
Computer Aided Design ◽  
High Electron Mobility Transistor ◽  
High Energy ◽  
Design System ◽  
High Electron ◽  
Power Added Efficiency ◽  
High Energy Efficiency ◽  
Aided Design

A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. The gate of the new structure is 5 nm higher than the barrier layer, and the buffer layer has two recessed regions in the buffer layer. The TCAD simulation results show that the maximum drain saturation current and transconductance of the HGMRB HEMT decreases slightly, but the breakdown voltage increases by 16.7%, while the gate-to-source capacitance decreases by 17%. The new structure has a better gain than the conventional HEMT. In radio frequency (RF) simulation, the results show that the HGMRB HEMT has 90.8%, 89.3%, and 84.4% power-added efficiency (PAE) at 600 MHz, 1.2 GHz, and 2.4 GHz, respectively, which ensures a large output power density. Overall, the results show that the HGMRB HEMT is a better prospect for high energy efficiency than the conventional HEMT.

Reactions in Activated Peroxide Systems and their Influences on Bleaching Performance

2020 ◽  
Vol 17 ◽  
Author(s):  
Xiaoyan Wang ◽  
Jinmei Du ◽  
Changhai Xu
Keyword(s):  
Aqueous Solution ◽  
Hydrogen Peroxide ◽  
Energy Efficiency ◽  
Textile Industry ◽  
High Energy ◽  
Side Reactions ◽  
Competitive Reactions ◽  
High Energy Efficiency ◽  
Hydrolysis Of ◽  
Bleach Activators

Abstract:: Activated peroxide systems are formed by adding so-called bleach activators to aqueous solution of hydrogen peroxide, developed in the seventies of the last century for use in domestic laundry for their high energy efficiency and introduced at the beginning of the 21st century to the textile industry as an approach toward overcoming the extensive energy consumption in bleaching. In activated peroxide systems, bleach activators undergo perhydrolysis to generate more kinetically active peracids that enable bleaching under milder conditions while hydrolysis of bleach activators and decomposition of peracids may occur as side reactions to weaken the bleaching efficiency. This mini-review aims to summarize these competitive reactions in activated peroxide systems and their influence on bleaching performance.

High Energy Efficiency and Stability for Photoassisted Aqueous Lithium–Iodine Redox Batteries

2016 ◽  
Vol 1 (4) ◽  
pp. 806-813 ◽  
Author(s):  
Georgios Nikiforidis ◽  
Keisuke Tajima ◽  
Hye Ryung Byon
Keyword(s):  
Energy Efficiency ◽  
High Energy ◽  
High Energy Efficiency

Influence of Electric Field on Microstructures of Pentacene Thin-Films in Field-Effect Transistors

2008 ◽  
Vol 18 (2) ◽  
pp. 285-293 ◽  
Author(s):  
H. L. Cheng ◽  
W. Y. Chou ◽  
C. W. Kuo ◽  
Y. W. Wang ◽  
Y. S. Mai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistors

NAND And NOR Logic-In-Memory Comprising Silicon Nanowire Feedback Field-Effect Transistors

2021 ◽  
Author(s):  
Yejin Yang ◽  
Juhee Jeon ◽  
Jaemin Son ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Processing Speed ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Logic Gate ◽  
High Energy ◽  
Zero Bias ◽  
Computing Systems ◽  
Data Movement

Abstract The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindrance, logic-in-memory (LIM) has been proposed that performs both data processing and memory operations. Here, we present a NAND and NOR LIM composed of silicon nanowidre feedback field-effect transistors, whose configuration resembles that of CMOS logic gate circuits. The LIM can perform memory operations to retain its output logic under zero-bias conditions as well as logic operations with a high processing speed of nanoseconds. The newly proposed dynamic voltage-transfer characteristics verify the operating principle of the LIM. This study demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues.

Electrochemical lithium recovery with lithium iron phosphate: What causes performance degradation and how can we improve the stability?

2021 ◽  
Author(s):  
Lei Wang ◽  
Kathleen C Frisella ◽  
Pattarachai Srimuk ◽  
Oliver Janka ◽  
Guido Kickelbick ◽  
...  
Keyword(s):  
Energy Efficiency ◽  
Manganese Oxide ◽  
Lithium Iron Phosphate ◽  
Iron Phosphate ◽  
High Energy ◽  
Performance Degradation ◽  
Electrochemical Processes ◽  
High Energy Efficiency ◽  
The Stability

Electrochemical processes enable fast lithium extraction, for example, from brines, with high energy efficiency and stability. Lithium iron phosphate (LiFePO4) and manganese oxide (λ-MnO2) have usually been employed as the...

Sign in / Sign up

Export Citation Format

Share Document