scholarly journals Effect of Metal (Cu, Mn) Doping on the Structural, Morphological, Optical, Photoluminescence, Electrical and Photocatalytic Properties of In2s3 Nanoparticles

2021 ◽  
Author(s):  
A. Kennedy ◽  
H. Ganesan ◽  
T. Govindaraj ◽  
J. Maalmargan ◽  
K. Bagyalakshmi
Keyword(s):  
Electrical Conductivity ◽  
High Photocatalytic Activity ◽  
Window Layer ◽  
Bandgap Energy ◽  
Cubic Phase ◽  
Acceptor Pair ◽  
Metal Doping ◽  
Donor Acceptor ◽  
Co Precipitation ◽  
Mn Doped

Abstract Pure and metal (Cu, Mn) doped In2S3 nanoparticles were prepared by the standard co-precipitation technique. This work aims to study the influence of metal (Cu, Mn) on the synthesized nanoparticles' structural, morphological, optical, photoluminescence, and electrical properties (NPs). The XRD pattern reveals that the metal (Cu, Mn) doped In2S3 NPs were polycrystalline with a cubic phase whose particle size varies between 36.2 and 49 nm. A significant decrease in the crystallite size was observed after metal doping. It is noted from the EDS spectra the elements like In, Cu, Mn and S are present in the NPs. The optical studies reveal that the high transmittance (80%) was observed for pure In2S3 NPs makes them an efficient window layer for solar cell applications. Also, the calculated bandgap energy was found to increase ( 2.8 – 3.28 e V) for metal doping. Photoluminescence measurements reveal that the photoemission is mainly due to the donor-acceptor pair transitions. The electrical studies indicate that the electrical conductivity decreases significantly with doping, and maximum electrical conductivity of 1.28 x 10-6 (Ω m)-1 was obtained for pure In2S3 NPs. A photocatalytic study reveals that high photocatalytic activity is observed for Mn-doped NPs under Methylene blue (84%).

scholarly journals Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
U. Strauss ◽  
H. Tews ◽  
H. Riechert ◽  
R. Averbeck ◽  
M. Schienle ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Cubic Phase ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Probing Depth ◽  
Decay Times ◽  
Cubic Gan ◽  
Donor Acceptor

Epitaxial layers of GaN on c-plane sapphire are analyzed by continuous-wave and time-resolved photoluminescence at 4K and by X-ray diffraction. Besides the well-known emissions from hexagonal GaN we observe luminescence bands at 3.279 and 3.15 to 3.21 eV which are identified as the transition of the donor bound exciton and the donor-acceptor pair recombination in cubic GaN, respectively. Measurements of the luminescence decay times are essential for the clarification of the emission processes. Due to the probing depth of about 200 nm in PL we find that the fraction of cubic phase typically decreases with layer thickness. In our best samples, however, we do not detect the cubic phase at all.

scholarly journals Optical Properties of Mn-doped GaN

2003 ◽  
Vol 798 ◽  
Author(s):  
O. Gelhausen ◽  
E. Malguth ◽  
M. R. Phillips ◽  
E. M. Goldys ◽  
M. Strassburg ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Mn Doping ◽  
Infrared Spectral Range ◽  
Infrared Spectral ◽  
Deep Donor ◽  
Order Of Magnitude ◽  
Donor Acceptor ◽  
Transmission Measurements ◽  
Mn Doped ◽  
Mn Concentrations

ABSTRACTMolecular beam epitaxy-grown GaN with different Mn concentrations (5–23 × 10 cm-3) and codoped with Si were investigated by cathodoluminescence (CL) spectroscopy and optical transmission measurements. In the GaN:Mn, an intense absorption peak at 1.414 +/- 0.002 eV was observed. This peak was attributed to an internal T2∼> E transition of the deep neutral Mn3+ state since its intensity scaled with the Mn3+ concentration. The CL measurements showed that Mn-doping concentrations around 1020 cm-3 had three effects on the emission spectrum: (i) the donor bound exciton at 3.460 eV was reduced by more than one order of magnitude, (ii) the donor-acceptor-pair band at 3.27 eV was completely quenched and (iii) the yellow luminescence centered at 2.2 eV was the strongly decreased. The latter two effects were attributed to a reduced concentration of VGa. In the infrared spectral range, three broad, Mn-doping related CL emission bands centered at 1.01 ± 0.02 eV, 1.09 ± 0.02 eV and 1.25 ± 0.03 eV were observed. These bands might be related to deep donor complexes, which are generated as a result of the heavy Mn-doping, rather than internal transitions at the Mn atom.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Structural differences between Sb- and Nb-doped tin oxides and consequences for electrical conductivity

2016 ◽  
Vol 40 (3) ◽  
pp. 2655-2660 ◽  
Author(s):  
Emma Oakton ◽  
Jérémy Tillier ◽  
Georges Siddiqi ◽  
Zlatko Mickovic ◽  
Olha Sereda ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Surface Area ◽  
High Surface ◽  
High Surface Area ◽  
Tin Oxides ◽  
Structural Differences ◽  
Co Precipitation

High surface area Nb and Sb-doped tin oxides are prepared by co-precipitation. The differences in conductivity are rationalised using HT-XRD, SSNMR and Nb K-edge XANES characterisation.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials

Electrical Properties of Donor and Acceptor Doped Gd2Ti2O7

1994 ◽  
Vol 369 ◽  
Author(s):  
Igor Kosacki ◽  
Harry L. Tuller
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Conductivity Measurements ◽  
Donor And Acceptor ◽  
Mn Doped

The results of electrical conductivity measurements on Nb, W, and Mn-doped Gd2Ti2O7 are presented. A correlation between electrical conductivity, the oxygen partial pressure and type of dopants has been obtained. The source of the different PO2 dependence for Mn-doped material is discussed.

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