scholarly journals Mathematical Modelling of Bifacial Dual SIS Solar Cell and Optimization of Tilt Angle

Author(s):  
Kaustuv Dasgupta ◽  
Anup Mondal ◽  
Utpal Gangopadhyay

Abstract The major challenge of PV cell design and installation has always been to find the optimum cost per energy and area of installation of solar panels. In densely populated and high-yielding agricultural country like India land acquisition is becoming an issue. Moreover the consisting demand to deduce the cost per energy indulges the worldwide scientists to design more efficient solar cells with low production cost. In developing countries scientists and engineers are trying to find an amicable solution to meet up these problems. In this paper the mathematical modelling of a dual SIS bifacial vertically mounted solar panel has been proposed to mitigate the energy and land area crisis in countries of Indian subcontinent, south Asia and elsewhere. The SIS (Semiconductor-Insulator-Semiconductor) technology was chosen for its extremely low thermal budget and less complicated production procedure. A bifacial solar cell with SIS junction in both sides was modelled. The front surface SIS junction was considered ZnO-SiO2-Si(p-type) while the back surface junction was considered Si(p type)-Al2O3-SnO. The efficiency for front and back surface was calculated as 5.64% and 5.58% respectively. We have further considered the effect of albedo from two different surfaces (soil and concrete) and the efficiencies of front and back surface for these albedo radiations. The angle of installation was optimized for both these effects. Considering both direct and albedo the all-day efficiency was calculated as 22.47% for a sunny day tropical region.

2019 ◽  
Vol 141 (9) ◽  
Author(s):  
Himanshu Sainthiya ◽  
Narendra S. Beniwal

This paper presents the effect of the front surface water cooling on performance parameters (solar cell temperature, back surface temperature, outlet water temperature, electrical efficiency, overall efficiency, etc.) of photovoltaic/thermal (PV/T) module in both winter and summer seasons in Indian climatic conditions. A mathematical model of PV/T module considering energy balance equations has also been presented. A comparative analysis of performance parameters obtained analytically and experimentally has also been presented. A fair agreement has also been found between analytical and experimental results which is supported by correlation coefficient of approximately unity and root mean square error of 10–14%. By front surface water cooling, solar cell and back surface temperature of PV/T module have been found to decrease considerably which in turn resulted in enhanced electrical and overall efficiency of module in winter and summer seasons.


2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Suhaila Sepeai ◽  
M. Y. Sulaiman ◽  
Kamaruzzaman Sopian ◽  
Saleem H. Zaidi

Bifacial solar cell is a specially designed solar cell for the production of electricity from both sides of the solar cell. It is an active field of research to make photovoltaics (PV) more competitive by increasing its efficiency and lowering its costs. We developed an n+pp+ structure for the bifacial solar cell. The fabrication used phosphorus-oxy-trichloride (POCl3) diffusion to form the emitter and Al diffusion using conventional screen printing to produce the back surface field (BSF). The n+pp+ bifacial solar cell was a sandwiched structure of antireflective coatings on both sides, Argentum (Ag) as a front contact and Argentum/Aluminum (Ag/Al) as a back contact. This paper reports the solar cell performance with different surface passivation or antireflecting coatings (ARC). Silicon nitride (SiN) deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), thermally grown silicon dioxide (SiO2), PECVD-SiO2, and SiO2/SiN stack were used as ARC. The efficiency obtained for the best bifacial solar cell having SiN as the ARC is 8.32% for front surface illumination and 3.21% for back surface illumination.


2018 ◽  
Vol 43 ◽  
pp. 01006 ◽  
Author(s):  
Ferdiansjah ◽  
Faridah ◽  
Kelvian Tirtakusuma Mularso

Back Surface Field (BSF) has been used as one of means to enhance solar cell performance by reducing surface recombination velocity (SRV). One of methods to produce BSF is by introducing highly doped layer on rear surface of the wafer. Depending on the type of the dopant in wafer, the BSF layer could be either p+ or n+. This research aims to compare the performance of BSF layer both in p-type and n-type wafer in order to understand the effect of BSF on both wafer types. Monociystalline silicon wafer with thickness of 300 μm. area of 1 cm2, bulk doping level NB = 1.5×1016/cm3 both for p-type wafer and n-type wafer are used. Both wafer then converted into solar cell by adding emitter layer with concentration NE =7.5×1018/cm3 both for p-type wafer and n-type wafer. Doping profile that is used for emitter layer is following complementary error function (erfc) distribution profile. BSF concentration is varied from 1×1017/cm3 to 1×1020/cm3 for each of the cell. Solar cell performance is tested under standard condition, with AM1.5G spectrum at 1000 W/m2. Its output is measured based on its open circuit voltage (Voc). short circuit current density (JSC), efficiency (η). and fill factor (FF). The result shows that the value of VOC is relatively constant along the range of BSF concentration, which is 0.694 V – 0.702 V. The same pattern is also observed in FF value which is between 0.828 – 0.831. On the other hand, value of JSC and efficiency will drop against the increase of BSF concentration. Highest JSC which is 0.033 A/cm2 and highest efficiency which is 18.6% is achieved when BSF concentration is slightly higher than bulk doping level. The best efficiency can be produced when BSF concentration is around 1×1017cm-3.. This result confirms that surface recombination velocity has been reduced due to the increase in cell’s short circuit current density and its efficiency. In general both p-type and n-type wafer will produce higher efficiency when BSF is applied. However, the increase is larger in p-type wafer than in n-type wafer. Better performance for solar cell is achieved when BSF concentration is slightly higher that bulk doping level because at very high BSF concentration the cell’s efficiency will be decreased.


1992 ◽  
Vol 283 ◽  
Author(s):  
Y. S. Tsuo ◽  
M. J. Heben ◽  
X. Wu ◽  
Y. Xiao ◽  
C. A. Moore ◽  
...  

ABSTRACTWe report on the results of our investigation of using porous Si to enhance the performance of crystalline silicon photovoltaic solar cells. Possible approaches include using the porous Si for (1) surface texturing to enhance light trapping, (2) front or back surface fields because of its wider bandgap, and (3) photon color conversion of blue light to longer wavelengths that have higher quantum efficiency in a Si solar cell. In our surface texturing study, a porous-Si-covered single-crystal Si wafer showed an integrated reflectance of only 1.4% at 500-nm wavelength compared to about 40% for a polished Si surface. For our solar cell study, we used a point-contact cell structure with diffused p+ and n+ point contacts on the back of the cell. This cell structure allows us to form the porous Si on the front surface after both the junction formation and the evaporation and alloying of metal contacts.


2021 ◽  
Author(s):  
Kaustuv Dasgupta ◽  
Anup Mondal ◽  
Soma Ray ◽  
Utpal Gangopadhyay

Abstract In this paper we have proposed the design and fabrication of a novel hetero junction SIS front surface and interdigitated back contact solar cell. We have approximated the performance parameters and loss analysis of the proposed solar cell by using MATLAB software programming. Many groups of scientists have reported the experimental analysis of a-Si back contact interdigitated solar cell in different studies. Many silicon hetero junction solar cell design and results have been reported with some promising efficiency in last few decades. In this study a high life time(~2 ms) n-Si substrate was considered so that a sufficient amount of light generated career can reach to the interdigitated layer to get absorbed. The availability of the careers at the interdigitated back surface was further enhanced by considering and high-low junction at the front surface created by a ZnO n+ layer at the front surface. A very thin layer of thermally generated insulator SiO2 was considered in between ZnO and n-Si. This layer improves the detrimental effect of interface defects. This is the first time we have theorized interdigitated back contact (IBC) solar cell using metal oxide semiconductors layer deposition avoiding the expensive and complicated doping and diffusion process. In general a high concentration n+ layer is doped to create the high-low junction at front to accelerate the carriers to the back junctions. We are proposing a cost effective thermal deposition of SiO2 layer followed by sol-gel ZnO layer deposition which serves the same purpose of an n+ layer by introducing an SIS junction potential at front. The interdigitated back surface was designed with subsequent n+ a:Si and p+ a:Si vertical junctions.


2015 ◽  
Vol 8 (1) ◽  
pp. 68-72 ◽  
Author(s):  
Xing-Fang Jiang ◽  
Xiang-Min Kong ◽  
Xin-Lu Li ◽  
Hong Jiang ◽  
Dong-Dong Chen

For the bottleneck problem of the conversion efficiency in silicon-based solar cell, the Metallization Wrap– through (MWT) technology is one of the effective methods based on the analysis of factors affecting the solar cell conversion efficiency. The MWT technology is based on laser perforation and that the bus grid lines in the front surface of the solar cell are moved to the back surface. The effective area on the front surface increases and the conversion efficiency is improved. One of the most important processes in MWT technology is laser perforation and a new perforation scheme using two-dimensional laser array is designed. The high power laser is divided into a number of beams then those beams are arranged in a two-dimensional array. The silicon wafer is placed in a predetermined position by suction cup and is moved by stepper motor. The light barriers are opened by triggering switch and the silicon wafer is exposed. After a series of light, machine, and electric processes a rapid one-time two-dimensional array laser perforation on silicon wafer is formed. This patent is expected to be used in solar cell production department soon.


Solar Energy ◽  
2009 ◽  
Vol 83 (6) ◽  
pp. 812-816 ◽  
Author(s):  
L. Zhao ◽  
H.L. Li ◽  
C.L. Zhou ◽  
H.W. Diao ◽  
W.J. Wang

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.


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