scholarly journals Study of the Optical, Electrical, Structural and Morphological Properties of Electrodeposited Lead Manganese Sulphide (PbMnS) Thin Film Semiconductors for Possible Device Applications

2021 ◽  
Vol 8 (1) ◽  
pp. 40-51
Author(s):  
Augustine Nwode Nwori ◽  
Nnaedozie Laz Ezenwaka ◽  
Ifenyinwa Euphemia Ottih ◽  
Ngozi, Agatha Okereke ◽  
Nonso Livinus Okoli
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Light Emitting Diode ◽  
Xrd Analysis ◽  
Band Gap Energy ◽  
Morphological Properties ◽  
Conductive Glass ◽  
Device Applications ◽  
High Absorption Coefficient ◽  
Range Of Values

Semiconductor thin films of lead manganese sulphide (PbMnS) have been successfully deposited on florinated tin oxide (FTO) conductive glass substrate using an electrodeposition method. Lead acetate (Pb(CH3COO)2), manganese sulphate (MnSO4.H2O) and thiourea (CH4N2S) were the precursor used for cadmium (Cd2+), manganese (Mn2+) and sulphur (S2-) sources respectively. The concentration of manganese (Mn2+) was varied while keeping the concentrations of Pb2+ and S2- constant at 0.2 M and 0.1 M respectively. The deposited films were annealed at temperature of 250 oC and subjected for optical, electrical, structural and morphological characterizations. The results of the characterizations showed that the deposited thin films of PbMnS have high absorbance, high absorption coefficient throughout VIS and NIR regions. The band gap energy of the films is tuned to the order of 1.9 eV to 2.0 eV and tends to constant as concentration of Mn2+ increased. The electrical properties (electrical resistivity and conductivity) of the films are dependent on the concentration of Mn2+ and film thickness. The range of values of the electrical properties is found to be within the range of values for semiconductor materials. The XRD analysis revealed that the deposited thin films of PbMnS is crystalline but the crystallinity declined with increase in concentration of Mn2+. The SEM morphology showed that the surfaces of the films are highly homogeneous in nature and particle sizes are uniform on the substrate with the majority of the particles been spherical in shape. These observed properties exhibited by the deposited thin films of PbMnS make the films good materials for many optoelectronic and electronic applications such as solar cell, light emitting diode (LED), photodetector etc.

Effect of vacuum annealing on the properties of one step thermally evaporated Sb2S3 thin films for photovoltaic applications

2021 ◽  
Author(s):  
Emna Gnenna ◽  
Naoufel Khemiri ◽  
Minghua Kong ◽  
Maria Isabel Alonso ◽  
Mounir Kanzari
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Xrd Analysis ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Optical Parameters ◽  
X Ray ◽  
Vis Spectroscopy ◽  
One Step

Sb2S3 powder was successfully synthesized by solid state reaction technique using high-purity elemental antimony and sulfur. Sb2S3 thin films were deposited on unheated glass substrates by one step thermal evaporation and annealed under vacuum atmosphere for 2 hours at different temperatures 150, 200 and 250 °C. Different characterization techniques were used to better understand the behavior of the Sb2S3 material. X-ray diffraction (XRD) and Raman spectroscopy confirmed the formation of pure Sb2S3 powder with lattice parameters a = 11.07 Å, b = 11.08 Å and c = 3.81 Å. The effect of vacuum annealing temperature on the properties of the films was studied. XRD analysis revealed that as-deposited and annealed films at 150ºC were amorphous in nature whereas those annealed at T ≥ 200°C were polycrystalline with a preferred orientation along (201) plane. The crystallite size of the polycrystalline films showed a decrease from 75.8 to 62.9 nm with the increase of the annealing temperature from 200 to 250 °C. The Raman analysis showed several peaks corresponding to the stibnite Sb2S3 phase. The surface morphology of the films was examined by atomic force microscopy (AFM). The surface roughness decreases slightly as the transformation from the amorphous to the crystalline phase occurs. The chemical compositions of Sb2S3 films were analyzed by energy dispersive X-ray spectroscopy (EDS), revealing that all films were Sb-rich. The optical parameters were estimated from the transmittance and reflectance spectra recorded by UV-Vis spectroscopy. A reduction in the direct band gap energy from 2.12 to 1.70 eV with the increase of annealing temperature was also found.

scholarly journals Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2146 ◽  
Author(s):  
Chayma Abed ◽  
Susana Fernández ◽  
Selma Aouida ◽  
Habib Elhouichet ◽  
Fernando Priego ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Thin Layers ◽  
Working Pressure ◽  
Hall Effect Measurements ◽  
Diffraction Patterns

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

scholarly journals Effect of Vacuum Annealing on the Optoelectric and Morphological Properties of F16CuPc Thin Films

2012 ◽  
Vol 9 (1) ◽  
pp. 294-300 ◽  
Author(s):  
Raji Koshy ◽  
C. S. Menon
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Band Gap Energy ◽  
Dielectric Constants ◽  
Morphological Properties ◽  
Optical Data ◽  
Organic Transistors ◽  
Reflectivity Spectra ◽  
Electrical Study

The effect of vacuum annealing temperature on optical and electrical properties of vacuum evaporated F16CuPc thin films have been studied spectrophotometer and Kiethely electrometer respectively. The band gap energy both fundamental and excitonic remains unchanged when the annealing temperature increased. The optical constants of thin films are obtained by means of thin film spectrophotometry. From the electrical study, the activation energies of the films, in the intrinsic region and impurity region have been determined from the Arrhenious plots of lnσversus1000/T. Optical data have been obtained from both absorption and reflectivity spectra over the wavelength range 200-800 nm. The absorption coefficient α and extinction coefficient k are estimated from the spectrum. The mechanism of optical absorption follows the rule of direct transition. Using α and k, the refractive index and the dielectric constants are determined. The SEM investigations are F16CuPc thin films are expected to find application in the fabrication of optoelectronic devices such as organic transistors and LED devices.

scholarly journals XRD and UV-Vis Spectroscopic Studies of Lead Tin Sulphide (PbSnS) Thin Films

2021 ◽  
Vol 18 (20) ◽  
pp. 16
Author(s):  
John Damisa ◽  
Joseph Onyeka Emegha
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Near Infrared ◽  
Lead Nitrate ◽  
Soda Lime ◽  
Spectroscopic Studies ◽  
Band Gap Energy ◽  
Silar Method ◽  
Tin Chloride ◽  
Device Applications

The effects of deposition cycles on the structural and optical properties of lead tin sulphide (PbSnS) thin films have been described. Successive ionic layer adsorption and reaction (SILAR) method was used to deposit the ternary material on soda-lime substrates. In the present work, the PbSnS films were grown using lead nitrate, tin chloride dehydrate and thioacetamide solutions as sources of Pb, Sn and S, respectively. XRD measurements revealed that the deposited films were polycrystalline in nature with strong adherent to the substrates. The transmittance was found to be high in the near infrared regions of the electromagnetic radiation and, also increased with deposition cycles. The band gap energy was found to vary from 1.70 to 1.75 eV for 10 and 35 deposition cycles. The study indicates that SILAR is an excellent method in depositing good quality films for device applications. HIGHLIGHTS SILAR is an excellent technique for depositing thin films of lead tin sulphide (PbSnS) Deposition cycles influences the XRD and optical properties of PbSnS thin films PbSnS thin films are useful for solar cell fabrications The band gaps of the PbSnS varies from 1.70 to 1.75 eV with deposition cycles

scholarly journals Structural and Morphological Properties of As-Deposited and Heat Treated Blended Graphene Oxide / Poly(3,4-Ethylenedioxythiophene)-Poly(Styrenesulfonate) Thin Films

2021 ◽  
pp. 4416-4424
Author(s):  
Saja Qasim ◽  
Ameer F. AbdulAmeer ◽  
Ali H A Jalaukhan
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Xrd Analysis ◽  
Morphological Properties ◽  
Sem Images ◽  
Force Microscopy ◽  
Atomic Force ◽  
Heat Treated ◽  
Spin Coater

    In this study the as-deposited and heat treated at 423K of conductive blend graphene oxide (GO)/ poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) thin films was prepared with different PEDOT:PSS concentration (0, 0.25, 0.5, 0.75 and 1)w/w on pre-cleaned glass substrate by spin coater. The XRD analysis indicate the existence of the preffered peak (001) of GO around 2θ=8.24° which is domain in all GO/ PEDOT:PSS films characterized for GO, this result approve the good quality of the PEDOT:PSS dispersion in GO, this peak shifted to the lower 2θ with increasing PEDOT:PSS concentration and after annealing process. The scanning electron microscopy (SEM) images and atomic force microscopy (AFM) clearly show the GO flakes and go to disappear with increasing the PEDOT:PSS concentration. 

Effect of Ag Doping on Structural, Optical and Electrical Properties of SnS:Ag Thin Films Prepared by Pulse Electroposition

2009 ◽  
Vol 60-61 ◽  
pp. 105-109 ◽  
Author(s):  
Yong Li Yang ◽  
Shu Ying Cheng ◽  
Song Lin Lai
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Silver Doping ◽  
Electro Deposition ◽  
Ag Doping ◽  
Semiconducting Properties ◽  
Primary Composition ◽  
High Absorption Coefficient ◽  
P Type

Silver-doping in SnS films can improve the semiconducting properties of SnS films. Based on our previous research, SnS:Ag thin films were deposited on ITO coated glass by pulse electro-deposition in order to study their structural, optical and electrical properties. SnS:Ag thin films were characterized with X-ray diffraction (XRD) , Scanning Electron Microscope (SEM) and some other methods. The primary composition of the films is SnS, but maybe there is a little quantity of SnS2, Ag8SnS6 and other compounds. The doped films exhibit good crystallization with big grain size. They have an optical gap of 1.66~1.89eV and a high absorption coefficient (α＞5×104cm-1). Hall measurement has shown that all the samples are of p-type conduction with low resistivity of the order of 10-3Ω•cm, and the carrier concentration increases to 1019cm-3 after Ag-doping. In conclusion, the semiconducting properties of the SnS films have been improved by silver-doping. Thus, SnS:Ag thin films can be used as solar cells absorbers.

Structural and electrical properties of excess PbO doped Pb(Zr0.52Ti0.48)O3 thin films using rf magnetron sputtering method

1998 ◽  
Vol 13 (12) ◽  
pp. 3436-3441 ◽  
Author(s):  
Tae Song Kim ◽  
Dong Joo Kim ◽  
Jeon Kook Leea ◽  
Hyung Jin Jung
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Lead Zirconate ◽  
Hysteresis Curve ◽  
Grown Film

Well-crystallized Pb(Zr0.52Ti0.48)O3 thin films (4000 Å thickness) can be synthesized on Pt/Ti/SiO2/Si(100) substrate at a temperature as low as 520 °C. The polycrystalline lead zirconate titanate (PZT) perovskite phase formation was confirmed with x-ray diffraction (XRD) analysis, and growth morphologies were studied with a scanning electron microscope (SEM). The electrical properties of PZT thin films were characterized through P-E hysteresis curve, dielectric constant, and loss, fatigue, and leakage current measurements. Remanent polarization (Pr) and coercive field (Ec) of as-grown film were 8–30 μC/cm2 and 24–64 kV/cm with the variation of applied voltage (5–15 V). The post-annealing enhances the electrical properties even at 500 °C, which is below the as-grown temperatures (520 °C). The average polarization loss after applying rectangular pulse (Vp-p = 10 V) up to 1011 cycles was 40.9% for a 300 μm small dot and 22% for a 500 μm large dot, which are relatively improved values for platinum electrode. The values of dielectric constant (ε′) and tan δ measured with small signal sign wave (1 V, 10 kHz) were 1207 and 0.066 in the case of as-grown film.

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