scholarly journals Residual gas analysis (RGA) and shear strength characteristics of a silver-filled epoxy and polyimide under long-term, high-temperature storage conditions. Final report

1994 ◽  
Author(s):  
B.E. Adams
2019 ◽  
Vol 3 (1) ◽  
pp. 70-83
Author(s):  
Wei Wei Liu ◽  
Berdy Weng ◽  
Scott Chen

Purpose The Kirkendall void had been a well-known issue for long-term reliability of semiconductor interconnects; while even the KVs exist at the interfaces of Cu and Sn, it may still be able to pass the condition of unbias long-term reliability testing, especially for 2,000 cycles of temperature cycling test and 2,000 h of high temperature storage. A large number of KVs were observed after 200 cycles of temperature cycling test at the intermetallic Cu3Sn layer which locate between the intermetallic Cu6Sn5 and Cu layers. These kinds of voids will grow proportional with the aging time at the initial stage. This paper aims to compare various IMC thickness as a function of stress test, the Cu3Sn and Cu6Sn5 do affected seriously by heat, but Ni3Sn4 is not affected by heat or moisture. Design/methodology/approach The package is the design in the flip chip-chip scale package with bumping process and assembly. The package was put in reliability stress test that followed AEC-Q100 automotive criteria and recorded the IMC growing morphology. Findings The Cu6Sn5 intermetallic compound is the most sensitive to continuous heat which grows from 3 to 10 µm at high temperature storage 2,000 h testing, and the second is Cu3Sn IMC. Cu6Sn5 IMC will convert to Cu3Sn IMC at initial stage, and then Kirkendall void will be found at the interface of Cu and Cu3Sn IMC, which has quality concerning issue if the void’s density grows up. The first phase to form and grow into observable thickness for Ni and lead-free interface is Ni3Sn4 IMC, and the thickness has little relationship to the environmental stress, as no IMC thickness variation between TCT, uHAST and HTSL stress test. The more the Sn exists, the thicker Ni3Sn4 IMC will be derived from this experimental finding compare the Cu/Ni/SnAg cell and Ni/SnAg cell. Research limitations/implications The research found that FCCSP can pass automotive criteria that follow AEC-Q100, which give the confidence for upgrading the package type with higher efficiency and complexities of the pin design. Practical implications This result will impact to the future automotive package, how to choose the best package methodology and what is the way to do the package. The authors can understand the tolerance for the kind of flip chip package, and the bump structure is then applied for high-end technology. Originality/value The overall three kinds of bump structures, Cu/Ni/SnAg, Cu/SnAg and Ni/SnAg, were taken into consideration, and the IMC growing morphology had been recorded. Also, the IMC had changed during the environmental stress, and KV formation was reserved.


Author(s):  
Zheng Wang ◽  
zhen Ma ◽  
Xiongfeng Hu ◽  
Ruirui Zhao ◽  
Junmin Nan

Abstract Mathematical models to evaluate and predict the performance degradation of lithium-ion batteries (LIBs) with different status of charge (SOC) in long-term high-temperature storage which are also applicable for setting rational storage conditions (temperature, SOC, and time) of LIBs were established. Parameters including voltage drop (Delta V), reversible capacity (RC) loss, and internal impedance (IMP) increase of LIBs under different temperature (60, 45, and 25°C) are used to allow the model to clarify its function. According to the results obtained from commercial 18650 cylindrical batteries with LiNi0.33Co0.33Mn0.33O2 cathode, the mathematical relationship between Delta V and storage days (x) is fitted into a simple formula: Delta V =m.In(x)-n, and similarly, RC loss = m'.exp (n'.x) and IMP increase = m''.xn'' can also be acquired. In these formulas, m, n, m', n', m'' and n'' are constants when temperature and SOC are fixed. If only the temperature is fixed, the value of these constants can be derived into a function with SOC (y), respectively, while further plugging the function into the calculation formula of Delta V, RC loss, and IMP increase, respectively, allows the mathematical models to be set up.


Materials ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 684
Author(s):  
Ruifeng Li ◽  
Daoguo Yang ◽  
Ping Zhang ◽  
Fanfan Niu ◽  
Miao Cai ◽  
...  

Changes in the elasticity modulus of an epoxy molding compound (EMC), an electronic packaging polymer, under high-temperature air storage conditions, are discussed in this study. The elasticity modulus of EMC had two different compositions (different filling contents) under different temperatures (175, 200, and 225 °C) and aging times (100, 500, and 1500 h), which were analyzed by using dynamic mechanic analysis technology. The results revealed that the elasticity modulus increased in the thermal aging process, with an increase in the temperature and the aging time. The increments of the glassy and rubbery states were similar. However, the growing rate was significantly different, and the growth of the rubbery state was significantly higher than that of the glassy state. The filling content influenced the degree of aging of the materials significantly. At a low filling content, long-term aging under high temperatures completely changed the material structure, and the mechanical properties of the polymer were reduced.


2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000073-000082
Author(s):  
Jinzi Cui ◽  
R. Wayne Johnson ◽  
Michael C. Hamilton

Nickel is a commonly used diffusion barrier for direct bond copper (DBC) substrates used in high temperature, high power applications. The Ni can be deposited by electroless or electrolytic plating and may be pure Ni, Ni:P, Ni:B or Ni:Co. The reactivity of these different Ni layers with AuGe and BiAgX® solder is explored. Specifically the reaction to form Ni-Ge intermetallics and NiBi3 during high temperature storage and the impact on die shear strength and failure mode are discussed.


2018 ◽  
Vol 2018 (1) ◽  
pp. 000434-000441
Author(s):  
Ly May Chew ◽  
Wolfgang Schmitt

Abstract Silver sintering is a promising die attach technology for high temperature power electronics packaging. Our previous studies have revealed that highly reliable sintered joints was obtained on silver and gold surfaces by either non-pressure or pressure sintering. In this paper, we extended our study to die attachment on copper surfaces by pressure sintering under air atmosphere. We attached Ag metallized die on silicon nitride active metal braze copper substrates with Ag metallization and without metallization by silver sintering at 230°C with a pressure of 10 MPa for 3 min. We observed that the average initial die shear strength for bare Cu substrate is lower than for Ag metallized substrate. This observation is attributed to the self-diffusion of Ag is faster than the interdiffusion between Ag and Cu. However, the average die shear strength for all samples increased considerably after temperature cycling test (−40°C/+150°C) and high temperature storage at 250°C. It is highly likely that sintering process is not yet completed under the sintering conditions used in this study and consequently Ag and Cu continued to diffuse during thermal cycling and high temperature storage and as a result strengthen the sintered joints. It is believed that after a certain time of storage at 250°C the sintering process is completed as we observed the average die shear strength remained relatively constant after 250 h storage. Voids, drying channels and delamination in the sintered joints were not detected by scanning acoustic microscopy for the samples before and after 2000 thermal cycles.


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