scholarly journals Оптические свойства пленок ниобата бария стронция SBN61

2018 ◽  
Vol 60 (5) ◽  
pp. 993
Author(s):  
В.Б. Широков ◽  
А.В. Павленко ◽  
Д.В. Стрюков ◽  
Ю.В. Ревинский
Keyword(s):  
Refractive Index ◽  
Single Crystal ◽  
Band Gap ◽  
Optical Transmission ◽  
Visible Range ◽  
Transmission Spectra ◽  
X Ray Diffraction ◽  
Dispersion Parameters ◽  
X Ray ◽  
Optical Transmission Spectra

AbstractHeteroepitaxial Sr_0.61Ba_0.39Nb_2O_6 films have been formed on MgO(001) substrates by RF deposition in an oxygen atmosphere. The film orientation with respect to the substrate is investigated using X-ray diffraction. The permittivity dispersion parameters in the visible range are determined by measuring optical transmission spectra. The films are found to have a wider band gap and a smaller refractive index as compared with the single-crystal material.

scholarly journals Спектральные и рентгеновские исследования пленок оксида индия на сапфировых подложках

2020 ◽  
Vol 128 (10) ◽  
pp. 1544
Author(s):  
А.А. Тихий ◽  
Ю.М. Николаенко ◽  
Ю.И. Жихарева ◽  
И.В. Жихарев
Keyword(s):  
Optical Transmission ◽  
Deposition Time ◽  
Film Material ◽  
Transmission Spectra ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Transmission Measurements ◽  
Optical Transmission Spectra ◽  
Diffraction Patterns

The results of investigation of optical transmission spectra and X-ray diffraction of thin In2O3 films deposited by dc-magnetron sputtering on Al2O3 (012) substrates are presented. The diffraction patterns exhibit the presents of the (222) reflex of cubic In2O3. Its position shifts from 30.3 to 30.6°, with a decrease in the film thickness. There was also a decrease in the half-width of this reflex by a decrease in the deposition time, which may indicate an increase in the crystallite size of the film material. According to the optical transmission measurements, the presence of a transition layer with the band gap of 1.39 eV and about of 40 nm thickness was established at the interface between the film and substrate. The properties of this layer are independent of the deposition time.

Growing of bulk β-(Al x Ga1-x )2O3 crystals from the melt by Czochralski method and investigation of their structural and optical properties

2021 ◽  
Author(s):  
Dmitrii A. Zakgeim ◽  
Dmitrii Bauman ◽  
Dmitrii Yi. Panov ◽  
Vladislav A. Spiridonov ◽  
Arina Kremleva ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Optical Transmission ◽  
Czochralski Method ◽  
Transmission Spectra ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Al Content ◽  
Optical Transmission Spectra

Abstract Bulk (Al x Ga1-x )2O3 crystals with an Al fraction x in the range from 0.0 to 0.23 were successfully grown by the Czochralski method. An increase in the band gap from 4.7 eV to 5.1 eV with the rise of the Al content was demonstrated by analyzing optical transmission spectra. The crystal quality of the obtained samples was controlled by X-ray diffractometry. The appearance of crystal`s mosaic blockness was found for the Al fraction x above 0.05.

Optical Properties of Colloidal MoS2

1992 ◽  
Vol 283 ◽  
Author(s):  
G. A. Wagoner ◽  
P. D. Persans ◽  
A. F. Ruppert
Keyword(s):  
Optical Transmission ◽  
Transmission Spectra ◽  
Average Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Typical Sample ◽  
Exciton Region ◽  
Optical Transmission Spectra ◽  
Synthetic Crystals ◽  
Particle Aspect Ratio

ABSTRACTWe report measurements and analysis of the optical transmission spectra of colloidal 2H-M0S2. prepared by ultrasonic shattering of synthetic crystals in N-Methyl Formamide. We used a combination of TEM, X-ray diffraction and dynamic light scattering to characterize particle shape and size. For a typical sample, the particles are platelets which have an average thickness of 50 Å and a diameter of 500 Å. Particle dielectric functions, deduced from both dilute colloids and thin films prepared by flocculaUon, differ significantly from bulk values. Calculations show that the average extinction coefficient is affected by particle aspect ratio, but this can not explain all the features of the data. Specifically, we observe a suppression of the absorbance peaks in the band edge exciton region between 1.7 and 2.1 eV, and increased absorbance below 1.7 eV. We suggest that the particles do not possess bulk-like dielectric properties and that tins is due to defects.

scholarly journals Effect of Cadmium Doping on the Optical Properties of As2(S, Se)3 Chalcogenide Thin Films

2015 ◽  
Vol 16 (3) ◽  
pp. 487-490
Author(s):  
I.V. Grytsyshche ◽  
M.I. Kozak ◽  
I.I. Turok ◽  
A.M. Solomon ◽  
V.Yu. Loya
Keyword(s):  
Chalcogenide Glasses ◽  
Optical Transmission ◽  
Transmission Spectra ◽  
Material Dispersion ◽  
Thermal Vacuum ◽  
Dispersion Parameters ◽  
Dispersion Energy ◽  
Effective Dispersion ◽  
Optical Transmission Spectra ◽  
Cadmium Doping

As2S3 and As2Se3  chalcogenide glasses doped with cadmium were synthesized in quartz ampoules. Thin chalcogenide films based on the synthesized compounds were deposited by thermal vacuum evaporation. Optical transmission spectra of the obtained films were measured and refractive index values were determined. For the films under investigation the energy bandgap, effective dispersion oscillator energy, and dispersion energy values were determined. Based on the material dispersion parameters, ionicity degree was estimated.

On the Structural and Optical Properties of Lead Selenide Nanolayers

2014 ◽  
Vol 1025-1026 ◽  
pp. 831-836 ◽  
Author(s):  
Arif M. Pashaev ◽  
Omar I. Davarashvili ◽  
Megi I. Enukashvili ◽  
Zaira G. Akhvlediani ◽  
Larisa P. Bychkova ◽  
...  
Keyword(s):  
Optical Transmission ◽  
Lead Selenide ◽  
Transmission Spectra ◽  
Structural And Optical Properties ◽  
Total Contribution ◽  
X Ray ◽  
Optical Transmission Spectra ◽  
The Given ◽  
Gap Width ◽  
Forbidden Gap

It was revealed that, according to the analysis by the half-width of the X-ray lines of reflection planes (200) and (600), the sizes of subgrains in the lead selenide nanolayer ~70 nm thick made up 30-45 nm. Disorientation between the subgrains of the order of the ten thousandth of a minute and the deformation (strain) in the layer was determined by the mismatch between the layer and the substrate. It is shown that the forbidden gap width Eg of the same PbSe nanolayer determined by analyzing the optical transmission spectra by two types of straightening f (hν) and (hν)2=f (hν) coincided and made up 0.445 eV, which exceeded Eg of the unstrained PbSe layer by 0.16 eV. The total contribution of quantum effects at the given subgrain sizes and degeneracy of current carriers is less than 0.03 eV, and generally the change in the forbidden gap width was associated with deformation. Key words: dispersion, deformation, disorientation between subgrains, optical transmission, forbidden gap width.

scholarly journals Выращивание объемных кристаллов оксида галлия из расплава методом Чохральского в кислородсодержащей атмосфере

2020 ◽  
Vol 46 (22) ◽  
pp. 43
Author(s):  
Д.А. Закгейм ◽  
Д.Ю. Панов ◽  
В.А. Спиридонов ◽  
А.В. Кремлева ◽  
А.М. Смирнов ◽  
...  
Keyword(s):  
Gallium Oxide ◽  
Optical Transmission ◽  
Czochralski Method ◽  
Transmission Spectra ◽  
X Ray ◽  
Growth Atmosphere ◽  
Optically Transparent ◽  
Optical Transmission Spectra ◽  
Oxide Crystals

This paper reports on successful experiments in growing beta-gallium oxide crystals using the Czochralski method. The influence of growth atmosphere composition on crystal quality of the material was studied. It is shown that to obtain high quality optically transparent crystals it is necessary to have about 5 vol.% oxygen in the growth atmosphere. X-ray structural analysis and investigation of optical transmission spectra of grown crystals are carried out.

scholarly journals The effects of doping on the structural, optical and electric properties of Zn4Sb3 material

2016 ◽  
Vol 81 (3) ◽  
pp. 323-332 ◽  
Author(s):  
Mirela Vaida ◽  
Narcis Duteanu ◽  
Ioan Grozescu
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Visible Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Absorbance Spectra ◽  
Semiconducting Behavior ◽  
Scanning Electron

This paper presents results of the investigations regarding the obtaining and the characterization of the thermoelectric material Zn4Sb3 and (Zn1-xMx)4Sb3 where M = Ag and / or Sn. Obtaining of the materials was realized by melting high purity precursors into an oven where were kept isothermally for 12 hours at 1173 K. X-ray diffraction and scanning electron microscopy were used for structural and morphologic characterization. Optical band gap for each sample was determined from absorbance spectra recorded in the visible range 240-400 nm at room temperature. Electrical resistivity as function of temperature was measured and the electrical band gap was estimated for each of the obtained samples. The semiconducting behavior of the materials was reflected by these.

scholarly journals Structural and Optical Properties ofIn2S3Thin Films Prepared by Flash Evaporation

2004 ◽  
Vol 27 (4) ◽  
pp. 207-214 ◽  
Author(s):  
K. Bouabid ◽  
A. Ihlal ◽  
A. Outzourhit ◽  
E. L. Ameziane
Keyword(s):  
Optical Properties ◽  
Optical Transmission ◽  
Annealing Temperature ◽  
Transmission Spectra ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Optical Gap ◽  
Deposited Films

In2S3thin films were deposited by flash evaporation ofIn2S3powder. The effect of annealing in vacuum and under sulphur atmosphere on the structural and optical properties of these films was investigated. X-ray diffraction studies reveal that the as-deposited films are amorphous. The formation ofβ-In2S3phase is obtained after annealing under vacuum at 693 K. Heat treatments under sulphur pressure lead to the formation of the above phase at a less annealing temperature (573 K). The energy dispersive X-ray (EDX) analysis reveals that the sulphurized films are nearly stoichiometric and those annealed in vacuum are sulphur deficient. Optical transmission spectra showed a slight shift of the absorption edge towards lower wavelengths. The optical gap value varied between 2.4 and 3 eV as a function of the film thickness and the annealing temperature.

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