scholarly journals Фазовый состав и структура пленки BiFeO-=SUB=-3-=/SUB=-, выращенной на подложке MgO(001) методом ВЧ-катодного распыления в атмосфере O-=SUB=-2-=/SUB=-

2022 ◽  
Vol 64 (2) ◽  
pp. 218
Author(s):  
А.В. Павленко ◽  
Д.В. Стрюков ◽  
С.П. Кубрин
Keyword(s):  
Easy Axis ◽  
Film Growth ◽  
Unit Cell ◽  
Single Crystal Substrate ◽  
Magnetic Subsystem ◽  
Modulated Structure ◽  
Bifeo3 Film ◽  
Crystal Substrate ◽  
Anharmonicity Parameter ◽  
Spectroscopy Studies

The crystal structure and Mossbauer spectroscopy studies results for BiFeO3 film growth on the MgO(001) single crystal substrate are present in the paper. It been shown that film have high crystal perfection and low defectiveness which results in appearing of narrow lines during the θ-2θ and φ scanning and the small (lower than 0.7°) disorientation of film and substrate crystal axes. It is been revealed that unit cell of BiFeO3/MgO(001) heterostructure possess monoclinic symmetry and deformation of unit cell is negligible. The Mossbauer study shows that magnetic subsystem of film has spatial spin-modulated structure with zero value of anharmonicity parameter (m). This indicate that at room temperature the magnetic anisotropy changes from the "easy axis" type to "easy plane" type.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Morphological transformations in solution-cast Styrene-Butadiene-Styrene (SBS) triblock copolymer thin films

1995 ◽  
Vol 53 ◽  
pp. 184-185
Author(s):  
Ginam Kim ◽  
W. Marsillo ◽  
M. Libera
Keyword(s):  
Thin Films ◽  
Triblock Copolymer ◽  
Annealing Treatment ◽  
Minor Component ◽  
Solvent Evaporation ◽  
Single Crystal Substrate ◽  
Transparent Films ◽  
Crystal Substrate ◽  
Solution Cast ◽  
Morphological Transformations

The fact that block copolymers can assume a range of morphologies depending upon such variables as relative block length and molecular weight is now well known. In the case of poly(styrene)[PS]-poly(butadiene)[PB]-poly(styrene) (SBS) triblock copolymer, the morphologies range from spheres (roughly ~20% minor component), to cylinders (roughly 20%~35% minor component), to lamellae (roughly equal component fractions) Most recently, there has been increasing interest in transformations between morphologies by thermal annealing. This paper describes initial results studying the effect of solvent evaporation rate and post-casting annealing treatment on the morphology of SBS thin films.TEM specimens were prepared by solution casting electron transparent films. 50 μl of 0.1 wt% SBS (30% styrene, Mw=14,000, Scientific Polymer Products, Inc.) dissolved in toluene was deposited on a polished NaCl single crystal substrate placed in a small dish. After solvent evaporation the film was cut into small squares, floated from the salt in water, and each square was collected on a Cu grid.

Microstructure and enhanced in-plane ferroelectricity of Ba0.7Sr0.3TiO3 thin films grown on MgAl2O4 (001) single-crystal substrate

2006 ◽  
Vol 89 (23) ◽  
pp. 232906 ◽  
Author(s):  
X. Y. Zhou ◽  
T. Heindl ◽  
G. K. H. Pang ◽  
J. Miao ◽  
R. K. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Electro-Optic Properties of (100)-Oriented (Pb,La(Zr,Ti)O3 Thin Film

2012 ◽  
Vol 185 ◽  
pp. 60-64
Author(s):  
Min Min Zhu ◽  
Ze Hui Du ◽  
Jan Ma
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Infrared Light ◽  
Single Crystal Substrate ◽  
Light Wavelength ◽  
Prism Coupler ◽  
Electro Optic ◽  
Crystal Substrate ◽  
Tm Model ◽  
Plzt Thin Films

(100)-oriented PLZT ((Pb1-x, Lax) (Zry,Ti1-y)1-x/4O3, x/y=9/65) films of up to ~ 1.23 μm have been developed on LaAlO3single crystal substrate by magnetron sputtering. The as-grown PLZT thin films exhibit high optical transparency in visible and near-infrared light wavelength and high quadratic (Kerr) EO coefficients. Prism coupler measurements reveal that the PLZT thin films possess large refractive index, as high as 2.524 in TE model and 2.481 in TM model. The transparency of >70% in the range of λ= 500-1200 nm, the optic band gap of 3.42 eV and the quadratic electro-optic (EO) coefficient of 3.38 x 10-17(m/V)2have been measured in the films. Due to the large EO coefficient and the micrometric thickness, the as-developed PLZT films have great potential in developing longitudinal-or transverse-type EO devices in electric and optic field

Superconducting Yttrium Barium Copper Oxide Thin Films Growing on the Strained Substrates

2008 ◽  
Vol 3 (4) ◽  
pp. 25-32
Author(s):  
Aleksandr V. Zakharov ◽  
Aleksandr B. Muravjev ◽  
Irina S. Pozygun ◽  
Gennadiy M. Seropyan ◽  
Sergey A. Sychev ◽  
...  
Keyword(s):  
Thin Films ◽  
Current Density ◽  
Superconducting Devices ◽  
Single Crystal Substrate ◽  
Superconducting Thin Film ◽  
Elastic Stresses ◽  
Barium Copper ◽  
Crystal Substrate ◽  
Long Time ◽  
Yttrium Barium

The article is devoted to formation of superconducting thin films on the single-crystal substrate where areas with different values of the critical current density are, that is needed for fabrication of superconducting devices. The method is based on an establishment of elastic mechanical stresses on the substrate crystal under the nanosecond focused pulsed laser irradiation. On the irradiated substrate the superconducting thin film having auxiliary elastic stresses not till the area is over the irradiated section of the substrate is grown. At the same time the critical film current density is suppressed for required values are used to fabricate Josephson junctions. Observations for a long time demonstrate superconducting transport film properties are not varied significantly during the maintenance.

Development of a Novel Metal Epitaxy Method towards Ni Based Electro-magnetic Hybrid Systems

2006 ◽  
Vol 962 ◽  
Author(s):  
Akifumi Matsuda ◽  
Masayasu Kasahara ◽  
Takahiro Watanabe ◽  
Wakana Hara ◽  
Sei Otaka ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Film ◽  
Hydrogen Reduction ◽  
Selective Reduction ◽  
Hydrogen Atmosphere ◽  
Oxide Thin Film ◽  
Single Crystal Substrate ◽  
Crystal Substrate ◽  
Oxide Substrate ◽  
Electro Magnetic

ABSTRACTThe epitaxial Ni (111) thin film on the oxide substrate could be obtained by a novel epitaxy method, employing pulsed laser deposition (PLD) of NiO (111) epitaxial film on the sapphire (α-Al2O3single crystal) substrate and successive hydrogen reduction of NiO. The NiO (111) epitaxial film was deposited on the sapphire (0001) substrate at room-temperature by PLD, and then reduced into the Ni epitaxial film by annealing (300 °C to 500 °C) in the hydrogen-atmosphere. On the other hand, the polycrystalline Ni metal thin film was obtained by reduction of the polycrystalline NiO film, indicating necessity of epitaxial growth for the precursor oxide thin film in the metal epitaxy. The present epitaxy method suggests the possible formation of [Ni/α-Al2O3] epitaxial multilayer via selective reduction of oxide multilayer.

scholarly journals Dynamics of Magnetization in Multilayer TbCo / FeCo Structures under the Influence of Femtosecond Optical Excitation

2019 ◽  
Vol 7 (3) ◽  
pp. 50-58 ◽  
Author(s):  
N. A. Ilyin ◽  
A. A. Klimov ◽  
N. Tiercelin ◽  
P. Pernod ◽  
E. D. Mishina ◽  
...  
Keyword(s):  
Easy Axis ◽  
Uniaxial Anisotropy ◽  
Anisotropy Field ◽  
Optical Excitation ◽  
Spin Precession ◽  
Heat Diffusion ◽  
Easy Magnetization ◽  
Test Beam ◽  
Magnetic Subsystem ◽  
Hard Axis

The need to study ultrafast processes in magnetism is due to the prospects for creating ultrafast magnetic recording and ultrafast spintronic devices. In order to excite the magnetic subsystem femtosecond optical pulses are used. The excitement is manifested as in spin precession. In metals, the material is heated first due to significant optical absorption, and significant Joule losses occur. The most important task is to search for materials in which spin processes are excited without heating. Obvious candidates are weakly absorbing materials, such as ferrite garnets. However, the range of such materials and the range of their functionality are limited.The purpose of this work is to study the dynamics of systems with nonthermal mechanisms of spin precession excitation. Such excitation is possible in ferromagnetic / antiferromagnetic heterostructures with exchange interaction, provided that the recombination time of photocarriers is shorter than the time of heat diffusion. Multilayer TbCo / FeCo structures of the near IR range were investigated for a femtosecond optical pulse. The spin dynamics are compared with the direction of the wave vector of the exciting pulse along and perpendicular to the axis of easy magnetization of the structures (“easy axis” and “hard axis” geometry, respectively). It is shown that in case of “easy axis” geometry the determinative mechanism is the thermal interaction. When the system is exposed to an excitation pulse, this mechanism leads to a decrease in the projection of magnetization on the direction of propagation of the test beam. In case of “hard axis” geometry, the magnetization turns to the magnetic field at the initial stage. Then it precesses and relaxes to an equilibrium angular orientation. Such dynamics indicate a rapid recovery of the uniaxial anisotropy field after laser irradiation. The presented results demonstrate an ultrafast change in the magnetic anisotropy induced during the fabrication of the heterostructure under study, which may be of interest for optical control of the orientation of the magnetization.

Effect of r-Al2O3 Single-Crystal Substrate on Growth of Ti1– xVxO2 Particles under Hydrothermal Conditions

2020 ◽  
Vol 65 (3) ◽  
pp. 299-304
Author(s):  
O. N. Makarevich ◽  
A. V. Ivanov ◽  
A. I. Gavrilov ◽  
A. M. Makarevich ◽  
O. V. Boytsova
Keyword(s):  
Single Crystal ◽  
Single Crystal Substrate ◽  
Hydrothermal Conditions ◽  
Crystal Substrate
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