scholarly journals FORMATION OF MG2SI THIN FILMS ON SI (111) AND THEIR RESEARCH BY EOS AND EELS

2021 ◽  
pp. 30-34
Author(s):  
DMITRIY VLADIMIROVICH FOMIN ◽  
◽  
NIKITA SERGEEVICH NOVGORODTSEV ◽  
DMITRIY OLEGOVICH STRUKOV ◽  
ALEXEY VYACHESLAVOVICH POLYAKOV ◽  
...  
Keyword(s):  
Thin Film ◽  
Vacuum Chamber ◽  
Solid Phase ◽  
Auger Spectroscopy ◽  
Magnesium Silicide ◽  
Characteristic Energy ◽  
Electron Auger Spectroscopy ◽  
High Vapor ◽  
Electron Auger

The paper presents information on the results of the formation of a thin Mg2Si film on a silicon substrate by solid-phase epitaxy in an ultrahigh-vacuum chamber of the PHI model 590 device. There are a number of difficulties in the formation of magnesium silicide films due to the low condensation coefficient and high vapor pressure. Effective methods for the formation of Mg2Si are currently being sought. As a result of our experiment, a thin film was obtained, which was studied in-situ by the method of electron Auger spectroscopy and spectroscopy of characteristic energy losses by electrons. Analysis of the Auger electron spectrum showed the presence of magnesium and silicon atoms in the composition of the formed film. From the analysis of the EELS spectra, it was found that a thin film of silicide magnesium was formed.

STUDY OF COMPOSITION FILM SYSTEM PB-SE AND CHANGE OF STRUCTURE UNDER TEMPERATURE ACTION

2018 ◽  
Vol 20 (5-6) ◽  
pp. 129-140
Author(s):  
A. G. Razina ◽  
V. A. Kazakov ◽  
A. A. Ashmarin ◽  
V. D. Kochakov
Keyword(s):  
Photoelectron Spectroscopy ◽  
Solid Phase Synthesis ◽  
Solid Phase ◽  
Auger Spectroscopy ◽  
Structural Features ◽  
Phase Synthesis ◽  
X Ray ◽  
Electron Auger Spectroscopy ◽  
Temperature Action ◽  
Electron Auger

The Pb-Se film systems were obtained by solid-phase synthesis and investigated by Xray diffraction and X-ray photoelectron spectroscopy, electron Auger spectroscopy. It was found that the films are heterogeneous in structure and composition. To study the structural features under the influence of temperature, Raman spectra of samples at temperatures of 300 K and 373 K were investigated.

Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization

2001 ◽  
Vol 16 (11) ◽  
pp. 918-924 ◽  
Author(s):  
L Pichon ◽  
K Mourgues ◽  
F Raoult ◽  
T Mohammed-Brahim ◽  
K Kis-Sion ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Polysilicon Films

Smart Thin Film TiNi/Pzt Heterostructures

1994 ◽  
Vol 360 ◽  
Author(s):  
Peter G. Mercado ◽  
A.Peter Jardine
Keyword(s):  
Thin Film ◽  
Shape Memory ◽  
Vacuum Chamber ◽  
Sol Gel ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ferroelectric Ceramics ◽  
Active Structures ◽  
Quartz Substrates

AbstractThin film layers of shape memory alloys and ferroelectric ceramics can produce a family of ‘smart’ heterostructures capable of performing both sensing and actuating functions. Important issues in the synthesis of these active structures are the ability to generate the appropriate crystalline phases of each material, while producing defect-free homogeneous high quality films. The compatibility of sol-gel processed Pb(Zr,Ti)O3 (PZT) thin films with thin film shape memory effect TiNi substrates were investigated. Thin film TiNi was deposited on quartz substrates by physical sputter deposition utilizing a TiNi target in a ultra-high vacuum chamber, and followed by in-situ vacuum annealing. PZT was deposited on TiNi by sol-gel and spin coating processes. The ferroelectric tetragonal phase of PZT was obtained by a 600 °C anneal for 5m in air. The heterostructures were nominally defect-free, unlike those obtained through deposition onto bulk TiNi substrates.x

scholarly journals UV Enhancement of Surface Catalytic Polymerization of Ethylene

1988 ◽  
Vol 129 ◽  
Author(s):  
Parul Vora Purohit ◽  
Mordechai Rothschild ◽  
Daniel J. Ehrlich
Keyword(s):  
Thin Film ◽  
Fourier Transform ◽  
Gas Phase ◽  
Solid Phase ◽  
Catalytic Polymerization ◽  
Saturation Thickness ◽  
Partial Pressures ◽  
Rate Of Polymerization ◽  
Phase Chemical

ABSTRACTThe polymerization of ethylene on surfaces sequentially dosed with TiC14 and trimethylaluminum was studied by Fourier transform infrared spectroscopy. The polymer film was observed in situ as a function of time and under the influence of 254-nm cw radiation. The rate of polymerization and the saturation thickness of the polyethylene are strongly dependent on the order of dosing and the partial pressures of the reactants that form the catalyst. UV enhancement of polymerization was demonstrated to occur through two separate photochemical channels: gas-phase photolysis of the reactants and solid-phase chemical transformation of a noncatalytic thin film.

Investigation of the Temperature-Dependent Surface Morphology of p-Sexiphenyl Thin Films on KCl(001)

2001 ◽  
Vol 708 ◽  
Author(s):  
E.J. Kintzel ◽  
E.S. Gillman ◽  
J.G. Skofronick ◽  
S.A. Safron ◽  
D.-M. Smilgies
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Vacuum Chamber ◽  
Base Pressure ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies

ABSTRACTInvestigation into the temperature dependence of the surface morphology of a thin film of p-sexiphenyl (p-6P) on KCl(001) was carried out by atomic force microscopy (AFM). An individual p-6P film was prepared by vapor deposition at a base pressure of ∼1x10-8 mbar onto a KCl(001) surface which was maintained at 323 K during deposition. The AFM was carried out in a separate vacuum chamber, in situ, at a base pressure of ∼1x10-6 mbar. The p-6P film was cooled and maintained at discrete temperatures in the range from 294 K to 128 K as AFM measurements were performed. Similar surface morphologies are observed for film temperatures maintained at 294, 264, and 227 K, and 188 and 128 K during the AFM measurements. AFM images for the first set of film temperatures (294 - 227 K) indicate the presence of block-like islands of p-6P, with well-defined crystallite boundaries. AFM images of the films in the second set (188 and 128 K) indicate the presence of triangular wedge-shaped structures of p-6P preferentially aligned nearly in the direction of the [110]KCl. Comparison of these wedge-shaped structures at the indicated film temperatures reveals they are rotated by approximately 180° with respect to each other. Subsequent images of the surface of the p-6P film captured again at 294 K, after the final 128 K temperature study was completed, revealed the same surface features found for the initial 294 K film temperature.

Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization

1997 ◽  
Vol 471 ◽  
Author(s):  
K. Mourgues ◽  
F. Raoult ◽  
L. Pichon ◽  
T. Mohammed-Brahim ◽  
D. Briand ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Polysilicon Films ◽  
The Difference

ABSTRACTLow Temperature Unhydrogenated in-situ doped polysilicon Thin Film Transistors (LTUTFT) are made through two types of four-mask aluminium gate process. Silicon layers are elaborated by a Low Pressure Chemical Vapor Deposition (LPCVD) method and crystallized by a thermal annealing. Source and drain regions are in-situ doped. An Atmospheric Pressure Chemical Vapor Deposition (APCVD) silicon dioxide ensures the gate insulation. Two structures A and B are fabricated, the difference is that for sample B the undoped/doped polysilicon layer interface is suppressed.The structure of the polysilicon films is studied using Transmission Electron Microscopy (TEM) and Current-Voltage characteristics of both types of TFTs indicate electrical quality of the polysilicon films.The best electrical properties are obtained with the B type TFTs: a low threshold voltage (VT=1.2V), a low subthreshold slope (0.7 V/dec), a high On/Off state current ratio (107) for a drain voltage VDS= 1V, and a very high field effect mobility (≥100 cm2 /Vs). It is worth to notice that these good results are obtained without hydrogenation.

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