Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeo3 thin films

Bi0.85La0.15FeO3 (BLFO) thin films were deposited on Pt(111)/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500?C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of mis?t strains.

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Elaboration of nitride thin films by reactive sputtering

Rem Revista Escola de Minas ◽

10.1590/s0370-44672006000200013 ◽

2006 ◽

Vol 59 (2) ◽

pp. 225-232 ◽

Cited By ~ 1

Author(s):

Pierre Yves Jouan ◽

Arnaud Tricoteaux ◽

Nicolas Horny

Keyword(s):

Thin Films ◽

Compressive Stress ◽

Bias Voltage ◽

Substrate Surface ◽

Lattice Parameter ◽

X Ray Diffraction ◽

X Ray ◽

A Value ◽

Dc Reactive Magnetron Sputtering ◽

Nitrogen Contents

The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

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Electric-field-induced lattice distortion in epitaxial BiFeO3 thin films as determined by in situ time-resolved x-ray diffraction

Applied Physics Letters ◽

10.1063/1.5000495 ◽

2017 ◽

Vol 111 (8) ◽

pp. 082907 ◽

Cited By ~ 2

Author(s):

Seiji Nakashima ◽

Osami Sakata ◽

Hiroshi Funakubo ◽

Takao Shimizu ◽

Daichi Ichinose ◽

...

Keyword(s):

Thin Films ◽

Electric Field ◽

Lattice Distortion ◽

X Ray Diffraction ◽

Time Resolved ◽

X Ray ◽

Bifeo3 Thin Films

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Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

Journal of Nanotechnology ◽

10.1155/2017/4276506 ◽

2017 ◽

Vol 2017 ◽

pp. 1-4 ◽

Cited By ~ 5

Author(s):

Swati Arora ◽

Vivek Jaimini ◽

Subodh Srivastava ◽

Y. K. Vijay

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Bismuth Telluride ◽

Room Temperature ◽

Thermal Evaporation ◽

Silicon Substrates ◽

X Ray Diffraction ◽

Thermal Evaporation Method ◽

X Ray ◽

Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

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Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.68.69 ◽

2009 ◽

Vol 68 ◽

pp. 69-76 ◽

Cited By ~ 6

Author(s):

S. Thanikaikarasan ◽

T. Mahalingam ◽

K. Sundaram ◽

Tae Kyu Kim ◽

Yong Deak Kim ◽

...

Keyword(s):

Thin Films ◽

Hexagonal Structure ◽

X Rays ◽

X Ray Diffraction ◽

X Ray ◽

Iron Selenide ◽

Glass Substrates ◽

Diffraction Patterns ◽

Cadmium Iron Selenide ◽

Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

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X-ray diffraction study of polycrystalline BiFeO3 thin films under electric field

Applied Physics Letters ◽

10.1063/1.2967736 ◽

2008 ◽

Vol 93 (4) ◽

pp. 042907 ◽

Cited By ~ 6

Author(s):

Seiji Nakashima ◽

Osami Sakata ◽

Yoshitaka Nakamura ◽

Takeshi Kanashima ◽

Hiroshi Funakubo ◽

...

Keyword(s):

Thin Films ◽

Electric Field ◽

Diffraction Study ◽

X Ray Diffraction ◽

X Ray ◽

Bifeo3 Thin Films

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Preparation of AlN thin films by means of CVD using iodide source under atmospheric pressure

MRS Proceedings ◽

10.1557/proc-1040-q09-30 ◽

2007 ◽

Vol 1040 ◽

Author(s):

Hiroki Iwane ◽

Naoki Wakiya ◽

Naonori Sakamoto ◽

Takato Nakamura ◽

Hisao Suzuki

Keyword(s):

Thin Films ◽

Residual Stress ◽

Sapphire Substrate ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Lattice Parameter ◽

X Ray Diffraction ◽

Cross Sectional ◽

X Ray ◽

Aluminum Iodide

AbstractEpitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.

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Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.545.290 ◽

2012 ◽

Vol 545 ◽

pp. 290-293

Author(s):

Maryam Amirhoseiny ◽

Hassan Zainuriah ◽

Ng Shashiong ◽

Mohd Anas Ahmad

Keyword(s):

Thin Films ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Rf Power ◽

X Ray Diffraction ◽

Nitrogen Gas ◽

X Ray ◽

Force Microscopy ◽

Si Substrates ◽

Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

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In situ X-ray diffraction studies on the piezoelectric response of PZT thin films

Thin Solid Films ◽

10.1016/j.tsf.2016.01.045 ◽

2016 ◽

Vol 603 ◽

pp. 29-33 ◽

Cited By ~ 7

Author(s):

A. Davydok ◽

T.W. Cornelius ◽

C. Mocuta ◽

E.C. Lima ◽

E.B. Araujo ◽

...

Keyword(s):

Thin Films ◽

Piezoelectric Response ◽

X Ray Diffraction ◽

Pzt Thin Films ◽

X Ray

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Structural, Magnetic, and Electrical Properties of BiFe1-xMnxO3 Thin Films

MRS Proceedings ◽

10.1557/proc-1199-f03-26 ◽

2009 ◽

Vol 1199 ◽

Author(s):

Danilo G Barrionuevo ◽

Surinder P Singh ◽

Maharaj S. Tomar

Keyword(s):

Thin Films ◽

Room Temperature ◽

Magnetic Measurements ◽

Sol Gel ◽

Ion Concentration ◽

Ferromagnetic Phase ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Sol Gel Process

AbstractWe synthesized BiFe1-xMnxO3 (BFMO) for various compositions by sol gel process and thin films were deposited by spin coating on platinum Pt/Ti/SiO2/Si substrates. X-ray diffraction shows all the diffraction planes corresponding to rhombohedrally distorted perovskite BiFeO3 structure. The absence of any impurity phase in the films suggests the incorporation Mn ion preferentially to Fe site in the structure for low concentration. Magnetic measurements reveal the formation of ferromagnetic phase at room temperature with increased Mn substitution. On the other hand, ferroelectric polarization decreases with increasing Mn ion concentration. Raman studies suggest the dopant induced structural distortion.

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Ferroelectric and Ferromagnetic Properties of Co-doped BiFeO3 Thin Films

MRS Proceedings ◽

10.1557/proc-1256-n06-47 ◽

2010 ◽

Vol 1256 ◽

Cited By ~ 4

Author(s):

Danilo G Barrionuevo ◽

Surinder P Singh ◽

Ram S Katiyar ◽

Maharaj S. Tomar

Keyword(s):

Thin Films ◽

Magnetic Coupling ◽

Partial Replacement ◽

Material System ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Solution Route ◽

Diffraction Patterns ◽

Novel Devices

AbstractMaterials which possess electrical and magnetic coupling are of great interest for novel devices. Bi(Fe1-xCox)O3 (BFCO) material system was synthesized by solution route for various compositions and thin films were prepared by spin coating on Pt (Pt/Ti/SiO2/Si) substrates. Structural properties of the films were investigated by x-ray diffraction and Raman spectroscopy. X-ray diffraction patterns confirms intense (110) in BiFeO3 and Bi(Fe1-xCox)O3 with rhombohedra distorted perovskite structure without impure phase. Bi(Fe1-xCox)O3 films show week ferroelectric polarization and ferromagnetism at room temperature. Ferroelectric and ferromagnetic coupling could be attributed to the elimination of oxygen vacancies and increased stress in the crystal structure by partial replacement of Fe2+ ion by Co2+ ion.

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