Ferroelectric and Ferromagnetic Properties of Co-doped BiFeO3 Thin Films

2010 ◽  
Vol 1256 ◽  
Author(s):  
Danilo G Barrionuevo ◽  
Surinder P Singh ◽  
Ram S Katiyar ◽  
Maharaj S. Tomar
Keyword(s):  
Thin Films ◽  
Magnetic Coupling ◽  
Partial Replacement ◽  
Material System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Solution Route ◽  
Diffraction Patterns ◽  
Novel Devices

AbstractMaterials which possess electrical and magnetic coupling are of great interest for novel devices. Bi(Fe1-xCox)O3 (BFCO) material system was synthesized by solution route for various compositions and thin films were prepared by spin coating on Pt (Pt/Ti/SiO2/Si) substrates. Structural properties of the films were investigated by x-ray diffraction and Raman spectroscopy. X-ray diffraction patterns confirms intense (110) in BiFeO3 and Bi(Fe1-xCox)O3 with rhombohedra distorted perovskite structure without impure phase. Bi(Fe1-xCox)O3 films show week ferroelectric polarization and ferromagnetism at room temperature. Ferroelectric and ferromagnetic coupling could be attributed to the elimination of oxygen vacancies and increased stress in the crystal structure by partial replacement of Fe2+ ion by Co2+ ion.

Real-time x-ray scattering study of growth behavior of sputter-deposited LaNiO3 thin films on Si substrates

2000 ◽  
Vol 15 (12) ◽  
pp. 2606-2611 ◽  
Author(s):  
Hsin-Yi Lee ◽  
K. S. Liang ◽  
Chih-Hao Lee ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Transition Layer ◽  
Growth Behavior ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Diffraction Patterns

Real-time x-ray reflectivity and diffraction measurements under in situ sputtering conditions were employed to study the growth behavior of LaNiO3 thin films on a Si substrate. Our results clearly show there is a transition layer of 60 Å, which grew in the first 6 min of deposition. The in situ x-ray-diffraction patterns indicated that this transition layer is amorphous. Subsequently, a polycrystalline overlayer grew as observed from the in situ x-ray reflectivity curves and diffraction patterns. Nucleation and growth took place on this transition layer with random orientation and then the polycrystalline columnar textures of (100) and (110) grew on the top of this random orientation layer. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that a crossover of the growth orientation from the ⟨110⟩ to the ⟨100ߩ direction occurred and the ability of (100) texturization enhanced with increasing film thickness beyond a certain critical value.

Physical and Mechanical Properties of Cement Paste Were Used Partially with Fly Ash and Kaolin Waste

2017 ◽  
Vol 866 ◽  
pp. 199-203
Author(s):  
Chidchanok Chainej ◽  
Suparut Narksitipan ◽  
Nittaya Jaitanong
Keyword(s):  
Mechanical Properties ◽  
Fly Ash ◽  
Room Temperature ◽  
Physical And Mechanical Properties ◽  
Partial Replacement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lime Water ◽  
Diffraction Patterns ◽  
Iron Mold

The aims of this research were study the microstructures and mechanical properties for partial replacement of cement with Fly ash (FA) and kaolin waste (KW). Ordinary Portland cement were partially replaced with FA and KW in the range of 25-35% and 10-25% by weight of cement powder. The kaolin waste was ground for 180 minutes before using. The specimen was packing into an iron mold which sample size of 5×5×5 cm3. Then, the specimens were kept at room temperature for 24 hours and were moist cured in the incubation lime water bath at age of 3 days. After that the specimens were dry cured with plastic wrap at age of 3, 7, 14 and 28 days. After that the compounds were examined by x-ray diffraction patterns (XRD) and the microstructures were examined by scanning electron microscopy (SEM). The compressive strength was then investigated.

Determining the C60 molecular arrangement in thin films by means of X-ray diffraction

2011 ◽  
Vol 44 (5) ◽  
pp. 983-990 ◽  
Author(s):  
Chris Elschner ◽  
Alexandr A. Levin ◽  
Lutz Wilde ◽  
Jörg Grenzer ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Information ◽  
Grazing Incidence ◽  
Test Material ◽  
C60 Fullerene ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Arrangement ◽  
Diffraction Patterns

The electrical and optical properties of molecular thin films are widely used, for instance in organic electronics, and depend strongly on the molecular arrangement of the organic layers. It is shown here how atomic structural information can be obtained from molecular films without further knowledge of the single-crystal structure. C60 fullerene was chosen as a representative test material. A 250 nm C60 film was investigated by grazing-incidence X-ray diffraction and the data compared with a Bragg–Brentano X-ray diffraction measurement of the corresponding C60 powder. The diffraction patterns of both powder and film were used to calculate the pair distribution function (PDF), which allowed an investigation of the short-range order of the structures. With the help of the PDF, a structure model for the C60 molecular arrangement was determined for both C60 powder and thin film. The results agree very well with a classical whole-pattern fitting approach for the C60 diffraction patterns.

scholarly journals Effect of indium content on X- ray diffraction and optical constants of InxSe1-x thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 55-72
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Indium Content ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Dispersion Energy ◽  
X Ray ◽  
Evaporation Technique ◽  
High Indium Content ◽  
Diffraction Patterns

Alloys of InxSe1-x were prepared by quenching technique withdifferent In content (x=10, 20, 30, and 40). Thin films of these alloyswere prepared using thermal evaporation technique under vacuum of10-5 mbar on glass, at room temperature R.T with differentthicknesses (t=300, 500 and 700 nm). The X–ray diffractionmeasurement for bulk InxSe1-x showed that all alloys havepolycrystalline structures and the peaks for x=10 identical with Se,while for x=20, 30 and 40 were identical with the Se and InSestandard peaks. The diffraction patterns of InxSe1-x thin film showthat with low In content (x=10, and 20) samples have semicrystalline structure, The increase of indium content to x=30decreases degree of crystallinity and further increase of indiumcontent to x=40 leads to convert structure to amorphous. Increase ofthickness from 300 to 700nm increases degree of crystallinity for allindium content. Transmittance measurements were used to calculaterefractive index n and the extinction coefficient k using Swanepole’smethod. The optical constants such as refractive index (n), extinctioncoefficient (k) and dielectric constant (εr, εi) increases for low indiumcontent samples and decreases for high indium content samples,while increase of thickness increases optical constants for all xvalues. The oscillator energy E0, dispersion energy Ed, and otherparameters have been determined by Wemple - DiDomenico singleoscillator approach.

A Chemical Solution Route to Rapid Synthesis of Homogeneous Bi100−xSbx Alloys Nanoparticles at Room Temperature

2007 ◽  
Vol 7 (2) ◽  
pp. 525-529 ◽  
Author(s):  
Bo Zhou ◽  
Jun-Jie Zhu
Keyword(s):  
Room Temperature ◽  
Raw Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Solution Route ◽  
Diffraction Patterns ◽  
Co Reduction ◽  
Chemical Solution Route

A chemical co-reduction route in aqueous solution was developed to synthesize Bi100−xSbx alloys at room temperature. The hydrolyses of Bi(III) and Sb(III) were effectively avoided by selecting proper raw materials and coordinator. X-ray diffraction analysis indicated that the as-prepared Bi100−xSbx alloys were homogeneous and phase-pure, and the Bi/Sb ratios in the alloys were very close to those in the aqueous solutions. The transmission electron microscope observation showed that the as-prepared Bi100−xSbx (x = 0∼100) alloys were particles with a size of tens of nanometers. The selected area electron diffraction patterns confirmed the high crystallinity, the homogeneousness, and the composition controllability of as-prepared alloys. All these characters and the nanometer-scaled size of the alloys are believed to be beneficial to the thermoelectric property of the Bi100−xSbx alloys.

Algorithms for the calculation of X-ray diffraction patterns from finite element data

2010 ◽  
Vol 43 (6) ◽  
pp. 1287-1299 ◽  
Author(s):  
E. Wintersberger ◽  
D. Kriegner ◽  
N. Hrauda ◽  
J. Stangl ◽  
G. Bauer
Keyword(s):  
Finite Element ◽  
Three Dimensional ◽  
Point Of View ◽  
X Ray Diffraction ◽  
Displacement Fields ◽  
X Ray ◽  
Si Substrates ◽  
Diffraction Patterns ◽  
Simulation Point ◽  
Ccd Detectors

A set of algorithms is presented for the calculation of X-ray diffraction patterns from strained nanostructures. Their development was triggered by novel developments in the recording of scattered intensity distributions as well as in simulation practice. The increasing use of two-dimensional CCD detectors in X-ray diffraction experiments, with which three-dimensional reciprocal-space maps can be recorded in a reasonably short time, requires efficient simulation programs to compute one-, two- and three-dimensional intensity distributions. From the simulation point of view, the finite element method (FEM) has become the standard tool for calculation of the strain and displacement fields in nanostructures. Therefore, X-ray diffraction simulation programs must be able to handle FEM data properly. The algorithms presented here make use of the deformation fields calculated on a mesh, which are directly imported into the calculation of diffraction patterns. To demonstrate the application of the developed algorithms, they were applied to several examples such as diffraction data from a dislocated quantum dot, from a periodic array of dislocations in a PbSe epilayer grown on a PbTe pseudosubstrate, and from ripple structures at the surface of SiGe layers deposited on miscut Si substrates.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

Formation and Characteristics of Thin Films of ZrO2-8 mol % Y2O3 Solid Electrolytes

2004 ◽  
Vol 97-98 ◽  
pp. 153-158 ◽  
Author(s):  
Darius Milčius ◽  
L.L. Pranevičius ◽  
V. Širvinskaitė ◽  
T. Šalkus ◽  
A. Kežionis ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Electrolytes ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Cubic Symmetry ◽  
X Ray ◽  
Pulsed Dc ◽  
Pulsed Dc Magnetron Sputtering ◽  
Diffraction Patterns

Thin films of ZrO2-8mol%Y2O3 have been deposed by pulsed DC magnetron sputtering method. The substrates of Ni-cermet and alloy-600 for the films were used. The results of the investigation of the X-ray diffraction patterns and SEM showed that the films are nanocrystalline and belong to cubic symmetry. The relaxation process is related to the ion transport in thin films. The results of the investigation of the temperature dependencies of thin films ionic conductivity (σ) showed that the dependence σ(T) is caused by the temperature dependence of oxygen vacancy mobility, while the number of charge carriers remains constant with temperature.

X-ray diffraction analysis for thin films of PbTiO3-La2/3TiO3 prepared by the sol-gel method

1994 ◽  
Vol 9 (8) ◽  
pp. 2133-2137 ◽  
Author(s):  
Hideki Yoshioka
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Diffraction Method ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Methods ◽  
Diffraction Patterns ◽  
System 1

Thin films in the system (1 - x) PbTiO3−xLa2/3TiO3 were prepared by the sol-gel and dip-coating methods. Phases deposited in the films and the lattice parameters as a function of the composition were investigated by the x-ray diffraction method. The solid solutions with a perovskite structure were formed as a single phase with x up to 0.9. For the composition of x = 1.0, metastable La-Ti-O perovskite phase with a small amount of the impurity phase, La2Ti2O7, was obtained. Simulation of x-ray diffraction patterns based on the defect structure model shows that the structure of the La-Ti-O perovskite phase includes randomly distributed cation vacancies at the A-site, namely (La2/3□1/3)TiO3.

Deposition of TiO2 Thin Films Using Magnetron Sputtering

2011 ◽  
Vol 217-218 ◽  
pp. 1743-1746
Author(s):  
Xing Long Guo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Profile Analysis ◽  
Line Profile Analysis ◽  
Analysis Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Grain Size ◽  
Diffraction Patterns

TiO2 with 20nm in diameter have been prepared by using magnetron sputtering technique. The structure of these powers was determined by X-ray diffraction experiments. The average grain size and particle size in these powers were measured by the line profile analysis method of X-ray diffraction patterns and by scan electron microscopy, respectively. The thin films were investigated by using XRD, SEM measurements.

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