Morphology and electrical properties of Cu X Zn1-XO thin films prepared by PLD technique

Cu X Zn1-XO films with different x content have been prepared bypulse laser deposition technique at room temperatures (RT) anddifferent annealing temperatures (373 and 473) K. The effect of xcontent of Cu (0, 0.2, 0.4, 0.6, 0.8) wt.% on morphology andelectrical properties of CuXZn1-XO thin films have been studied.AFM measurements showed that the average grain size values forCuXZn1-xO thin films at RT and different annealing temperatures(373, 473) K decreases, while the average Roughness values increasewith increasing x content. The D.C conductivity for all filmsincreases as the x content increase and decreases with increasing theannealing temperatures. Hall measurements showed that there aretwo types of conductance (n- type and p-type charge carriers). Alsothe variation of drift velocity (vd), carrier life time (), and free meanpath (l) with different x content and annealing temperatures weremeasured.

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Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v14i29.218 ◽

2019 ◽

Vol 14 (29) ◽

pp. 37-43 ◽

Cited By ~ 1

Author(s):

Raied K. Jamal

Keyword(s):

Thin Films ◽

Activation Energy ◽

Electrical Properties ◽

Transport Mechanism ◽

Room Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Concentration Increase ◽

Annealing Temperatures ◽

P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

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Temperature Dependence of Hall Mobility AndCarrier Concentration of pb0.55S0.45 Films

Baghdad Science Journal ◽

10.21123/bsj.6.1.129-134 ◽

2009 ◽

Vol 6 (1) ◽

pp. 129-134

Author(s):

Baghdad Science Journal

Keyword(s):

Hall Mobility ◽

Room Temperature ◽

Annealing Temperature ◽

High Vacuum ◽

Life Time ◽

Mean Free Path ◽

Charge Carriers ◽

Evaporation Technique ◽

Carrier Life Time ◽

Type Conduction

Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature

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Study of structural, optical and electrical properties of thin Ag2Cu2O4 films prepared by pulsed laser deposition

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v15i34.119 ◽

2019 ◽

Vol 15 (34) ◽

pp. 41-54

Author(s):

Iqbal S. Naji

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Sintering Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Positive Sign ◽

Glass Substrates ◽

Atomic Force ◽

Structural Surface ◽

P Type

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.

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Highly Doped P-Type, N-Type CdS Thin Films and Diodes

MRS Proceedings ◽

10.1557/proc-329-173 ◽

1993 ◽

Vol 329 ◽

Author(s):

Wen P. Shen ◽

Hoi S. Kwok

Keyword(s):

Thin Films ◽

Doping Concentration ◽

Annealing Process ◽

Laser Deposition ◽

Post Annealing ◽

Gaas Substrates ◽

Cds Thin Film ◽

Good Crystalline Quality ◽

Cds Thin Films ◽

P Type

AbstractCdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

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Influence of different post-annealing temperatures on physical properties of La0.72Ca0.28MnO3:Ag0.2 thin films by pulsed laser deposition technique

Ceramics International ◽

10.1016/j.ceramint.2019.11.120 ◽

2020 ◽

Vol 46 (5) ◽

pp. 6418-6423

Author(s):

Yule Li ◽

Qingming Chen ◽

Xiang Liu ◽

Hui Zhang

Keyword(s):

Thin Films ◽

Physical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Annealing Temperatures ◽

Post Annealing

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AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

International Journal of Modern Physics B ◽

10.1142/s0217979208039447 ◽

2008 ◽

Vol 22 (14) ◽

pp. 2275-2283 ◽

Cited By ~ 10

Author(s):

WEIDONG CHEN ◽

LIANGHUAN FENG ◽

ZHI LEI ◽

JINGQUAN ZHANG ◽

FEFE YAO ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

High Efficiency ◽

Dark Conductivity ◽

Aluminum Antimonide ◽

Dc Magnetron Sputtering ◽

Glass Substrates ◽

Average Grain Size ◽

P Type ◽

20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

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P-Type II-VI Compound Semiconductor Thin Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-388-91 ◽

1995 ◽

Vol 388 ◽

Author(s):

W. P. Shen ◽

H. S. Kwok

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Type Ii ◽

New Approach ◽

Li Doping ◽

Semiconductor Thin Films ◽

In Doping ◽

P Type

AbstractIn this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.

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