scholarly journals Band Gap Characterization of Thermally Treated Hybrid Blend ZnPc/CdS Thin Films

2019 ◽  
Vol 17 (43) ◽  
pp. 94-102
Author(s):  
Holya A. Alobaidy
Keyword(s):  
Thin Films ◽  
Absorption Spectrum ◽  
Band Gap ◽  
Annealing Time ◽  
Spin Coating ◽  
Energy Gap ◽  
Conductivity Measurement ◽  
Cds Thin Films ◽  
Optical Behavior

Spin coating technique used to prepare ZnPc, CdS and ZnPc/CdS blend thin films, these films annealed at 423K for 1h, 2h and 3h. Optical behavior of these films were examined using UV-Vis. and PL. The absorption spectrum of ZnPc shows a decreasing in absorption with the increase of annealing time while CdS spectrum give a clearly absorption peak at~510 nm. Energy gap of ZnPc increases from 1.41 to 1.52 eV by increasing the annealing time. Eg of CdS decrease by increasing annealing time, from 2.3 eV to 2.2 eV. The intensities of the peaks obtained from PL spectra were strongly dependent on annealing time and confirmed the results obtained from UV-Vis. D.C. conductivity measurement showed that all the thin films have two different activation energies in the temperature range 303–473K.

Band Gap and Conductivity Measurement of TiO2 Thin Films Deposited by Sol-Gel Spin Coating Method

2012 ◽  
Vol 500 ◽  
pp. 273-277
Author(s):  
Davinder Rathee ◽  
Mukesh Kumar ◽  
Sandeep K. Arya ◽  
Mukesh Sharma
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spin Coating ◽  
Sol Gel ◽  
Conductivity Measurement ◽  
Spin Coating Method ◽  
Coating Method

Band Gap and Conductivity Measurement of TiO2 Thin Films Deposited by Sol-Gel Spin Coating Method

2012 ◽  
Vol 500 ◽  
pp. 273-277 ◽  
Author(s):  
Davinder Rathee ◽  
Mukesh Kumar ◽  
Sandeep K. Arya ◽  
Mukesh Sharma
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spin Coating ◽  
Sol Gel ◽  
Conductivity Measurement ◽  
Thermo Gravimetric ◽  
Spin Coating Method ◽  
Thermo Gravimetric Analyzer ◽  
Current Voltage ◽  
Coating Method

Thin films of TiO2have been deposited on to cleaned glass substrate by sol gel spin coating method. The XRD analyses confirm different crystalline phases of TiO2thin films. The grain size calculated by the help of Scherer’s formula and found to be 23nm, 37nm and 54 nm respectively for TiO2(004), TiO2(200) and TiO2(211) orientations. The band gap was calculated 3.6 eV by UV-spectrophotometer. The refractive index of the TiO2film was measured by Ellipsometry and found to be 2.33. Conductivity was measured using Current voltage (I-V) characteristics. To determine composition and thermal stability, thermo gravimetric Analyzer (TGA) and Differential Scanning Calorimeter (DSC) analysis was made on samples.

scholarly journals Characterization of Thermally Evaporated CdSe1-XSX Thin Films for Solar Cells Applications

2018 ◽  
Vol 14 (2) ◽  
pp. 5477-5487 ◽  
Author(s):  
M. Abdel-Rahman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystallite Size ◽  
Energy Gap ◽  
Lattice Parameters ◽  
Cell Junction ◽  
Microstructure Parameters ◽  
Cds Thin Films ◽  
Evaporation Technique

Binary semiconductor CdSe and CdS thin films are widely used for optoelectronic devices and window materials. The formation of ternary CdSe1-xSx thin films improves the physical characteristics of the binary CdSe thin films. The importance of CdSe1-xSx thin film is the change of band gap when incorporating S into the CdSe. This change in energy gap recommends CdSe1-xSx thin film for photovoltaic and photoconductive cells applications. In this work, polycrystalline CdSe1-xSx thin films have been grown in terms of thermal evaporation technique. X-ray diffractometry has been used to determine the lattice parameters and the crystallite size of the CdSe1-xSx mixed crystals. The variation in lattice parameters with composition from x = 0 to x = 1 were linearly. The crystallite size varies parabolically with the change in composition. The energy gap, opt g E , values of CdSe1-xSx thin films were estimated in terms of first derivative of absorbance with respect to wavelength and found to be increased with the formation of the ternary compound Cd-Se-S and with increasing the S content as expense of Se. This wider energy gap of the prepared films, which permits extra light to reach the solar cell junction, was correlated with the change in the microstructure parameters of thin films.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

Synthesis, Characterization and Optical Properties of PLA / P3HT Blends Thin Films

2021 ◽  
Vol 19 (5) ◽  
pp. 132-138
Author(s):  
Maan Abd-Alameer Salih ◽  
Q.S. Kareem ◽  
Mohammed Hadi Shinen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Ring Opening ◽  
Energy Gap ◽  
Ring Opening Polymerization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conductivity Increase ◽  
Ft Ir

In this exploration Poly lactic corrosive (PLA) was orchestrated the ring-opening polymerization Poly lactic corrosive (PLA) blended with poly(3-hexylthiophene) (P3HT) which prepared by solution. Blends thin films Synthesis by spin coating technique and using Tetrahydrofuran (THF) as solvent. PLA powder was 'characterized by' 'X-ray' 'diffraction', '(FT-IR)'. pure Optical properties (PLA), (PLA)/P3HT blends thin films with different percentage of P3HT (0, 1, 2, and 3) wt% were investigated using UV-VS spectroscopy The results showed that the absorption, absorption coefficient, extinction coefficient and conductivity increase with increasing the rate of deformation P3HT, The energy gap decreases with increasing deformation.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

scholarly journals optical proprties of poly crystaline CdS thin films

2005 ◽  
Vol 2 (2) ◽  
pp. 231-235
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Energy Gap ◽  
Glass Temperature ◽  
Calculated Energy ◽  
Cds Thin Films ◽  
Temperature Preparation

Studied the optical properties of the membranes CdS thin containing different ratios of ions cadmium to sulfur attended models manner spraying chemical gases on the rules of the glass temperature preparation (350c) were calculated energy gap allowed direct these membranes as observed decrease in the value of the energy gap at reducing the proportion ofsulfur ions as absorption coefficient was calculated

Optical Properties of Alq3/TiO2 BDR Structure Processed by Spin Coating Technique

MRS Advances ◽  
2019 ◽  
Vol 4 (11-12) ◽  
pp. 661-666
Author(s):  
L. Ajith DeSilva ◽  
Sarahn Nazaret ◽  
A. G. U. Perera ◽  
T. M. W. J. Bandara
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Optical Properties ◽  
Band Gap ◽  
Spin Coating ◽  
Light Emission ◽  
Wide Band ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Pl Quenching

ABSTRACTOne-dimensional hybrid Distributed Bragg Reflector (DBR) is constructed using Tris (8-hydroxy) quinoline aluminum (Alq3) molecules and Titanium dioxide (TiO2) nanoparticles via spin coating process. Light emission from thin films of low molecular weight organic semiconductor of Alq3 is dominated by excitons. This material has been widely used as a superior emitter for organic light emitting diodes. Titanium dioxide (TiO2) is an inorganic semiconductor with a high band gap. Photoluminescence (PL) of thin films of Alq3 showed a broad PL peak at 530 nm. In DBR structures, PL quenching is observed but there is no shift in the PL peak of the Alq3. The PL quenching is tentatively attributed to energy transfer via sensitization to wide band gap TiO2 layers. A simple excitonic model is suggested to explain the observation. Fabrication process and optical properties of the structure are presented.

Sign in / Sign up

Export Citation Format

Share Document