scholarly journals The effect of silicon surface treatment on the electrical properties of n-MoN/n-Si heterojunctions

2021 ◽  
Vol 25 (1) ◽  
Author(s):  
M. M. Solovan ◽  
H. P. Parkhomenko ◽  
P. D. Marianchuk
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.


1990 ◽  
Vol 11 (2) ◽  
pp. 100-102 ◽  
Author(s):  
S.A. Grot ◽  
G.S. Gildenblat ◽  
C.W. Hatfield ◽  
C.R. Wronski ◽  
A.R. Badzian ◽  
...  

2013 ◽  
Vol 20 (2) ◽  
pp. 163-166
Author(s):  
Shih-Feng Tseng ◽  
Wen-Tse Hsiao ◽  
Han-Chao Chang ◽  
Ming-Fei Chen

2018 ◽  
Vol 2018 (HiTEC) ◽  
pp. 000148-000153
Author(s):  
Kenneth P. Dowhower

Abstract The electrical interconnect is an essential component of most electrical system configurations. The ability of the interconnect interface to reliably transmit power and / or data throughout the system is critical to its overall performance. Degradation of the mechanical or electrical properties of the interface can reduce the system performance or in severe cases, make it inoperable. There are several factors which can inhibit the performance of the interconnect, one of most severe is long term exposure to elevated temperatures. This effect can also be accelerated when combined with other severe environmental conditions such as high vibration and physical shock, which are often found in down hole oil and gas well drilling applications. This type of exposure can significantly degrade the essential properties of a reliable electrical interface such as contact resistance, mechanical stability, and electrical isolation. This paper will present options for design features and material properties that can be incorporated into an interconnect design that will mitigate these adverse effects. Specifically, this paper addresses the material properties of the contact interface and its surface treatment, the mechanical and electrical properties of the insulating material, the robustness of the mating features and the contact retention system. Two key features of the contact interface that are discussed are the stability of its electrical resistance and the robustness of its mechanical retention. Long term exposure to high temperatures typically induces stress relaxation in the compliant members of the contact interface that are required to produce a stable, low resistance interface, while allowing for a high level of mate / unmate durability. Stress relaxation can also reduce the mechanical stability of the contact interface where metal or plastic retention features are utilized. In the case of retention through epoxy bonding, imparting thermal stress at the bonding surface can result in loss of adhesion and / or retention. The surface treatment of the contact interface has also been shown to be a contributing factor in its electrical stability in high temperature applications. Typically, the interface is plated with a hard gold over nickel finish, which provides a noble interface that is corrosion resistant, but with the hardness required to withstand many mate / unmate cycles. A small percentage of nickel or cobalt are typically alloyed with the gold to produce the required hardness. In most applications, it has minimal impact on the overall resistance of the contact interface. In high temperature applications, however, it can tend to diffuse through the gold to the contact interface. Since these materials have a higher resistivity, they can negatively affect the resistance of the interface. The impact of this effect is reviewed in this paper. Finally, results of the evaluations on high temperature insulating materials and bonding epoxies are presented in this paper. The mechanical and dielectric stability of the insulating materials and the adhesion properties of the epoxy used for contact retention were the primary concerns for their evaluation. The verification tests that included at temperature exposure were conducted at +260°C to simulate extreme use cases for most down hole applications.


2005 ◽  
Vol 56 (12) ◽  
pp. 916-922 ◽  
Author(s):  
K. Berreth ◽  
K. Maile ◽  
A. Lyutovich

1989 ◽  
Vol 28 (Part 2, No. 1) ◽  
pp. L16-L18 ◽  
Author(s):  
Shinji Fujieda ◽  
Koichi Akimoto ◽  
Ichiro Hirosawa ◽  
Jun'ichiro Mizuki ◽  
Yoshishige Matsumoto ◽  
...  

2007 ◽  
Vol 131-133 ◽  
pp. 83-88
Author(s):  
I.V. Antonova ◽  
M.B. Gulyaev ◽  
R.A. Soots ◽  
V.A. Seleznev ◽  
V.Ya. Prinz

The electrical properties of structures included 1-octadecene (CnH2n, n=18) monolayers deposed onto the oxide-free silicon surface or Si/SiGe/Si layers were analyzed as a function of surface pretreatment (hydrogen- or iodine-terminated silicon surface) and layer deposition regime (thermal- or photo-activated process). Two types of traps (for electrons and holes) were found at the interface between the monolayers and substrate. The density of traps was shown to depend on the, H- or I-termination of the silicon surface, the illumination intensity and deposition time during photo-activated deposition, and the temperature of thermal-activated deposition. The optimal regimes can be chosen for minimization of the surface charge in the structures covered with 1- octadecene monolayers, which provides a high conductivity of thin near-surface layers.


1997 ◽  
Vol 477 ◽  
Author(s):  
Stefan Bengtsson ◽  
Karin Ljungberg

ABSTRACTThe use of H2SO4:H2O2:HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si/Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si/Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique.


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