SPFM Pre-Cleaning for formation of Silicon Interfaces by Wafer Bonding

MRS Proceedings ◽

10.1557/proc-477-267 ◽

1997 ◽

Vol 477 ◽

Author(s):

Stefan Bengtsson ◽

Karin Ljungberg

Keyword(s):

Electrical Properties ◽

Wafer Bonding ◽

Silicon Surface ◽

Room Temperature ◽

Electrical Characterization ◽

Preparation Procedure ◽

Cleaning Process ◽

Spreading Resistance ◽

Cleaning Procedure

ABSTRACTThe use of H2SO4:H2O2:HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si/Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si/Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique.

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Anodic Bonding of Silicon-Pyrex and Silicon-Soda Lime Glass at Room Temperature

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1082.420 ◽

2014 ◽

Vol 1082 ◽

pp. 420-423

Author(s):

Muhammad Hafiz Ab Aziz ◽

Zaliman Sauli ◽

Vithyacharan Retnasamy ◽

Hussin Kamarudin ◽

Wan Mokhdzani Wan Norhaimi ◽

...

Keyword(s):

Bond Strength ◽

Wafer Bonding ◽

Room Temperature ◽

Bonding Temperature ◽

Soda Lime ◽

Anodic Bonding ◽

Soda Lime Glass ◽

Cleaning Process ◽

Mems Devices ◽

Before And After

Silicon wafer bonding opens possibilities in creating MEMS devices and anodic bonding is found to be the most relevant wafer bonding technique process in constructing and packaging MEMS. This paper reports on the bond strength comparison between silicon and different glass based materials via anodic bonding. Two types of glass based surface used pyrex and soda lime glass. Bonding temperature is set at room temperature while a high direct current voltage of 15kV. Experiments were carried out using an in-house designed anodic bonder and the bond strength were measured using a bond strength tester. The anodic approach process was done in two sets which are before and after the cleaning process for each sample. Results show that all samples showed higher bond strength after the cleaning process. Silicon-soda lime glass have higher bonding strength of 1950 Pa compared to silicon-pyrex bonding which only gives 1850 Pa of bond strength.

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Structural and Electrical Characterization of Hydrophobic Direct-Bonded Silicon Interfaces

MRS Proceedings ◽

10.1557/proc-318-299 ◽

1993 ◽

Vol 318 ◽

Author(s):

Gordon Tam ◽

F. Secco d'Aragona ◽

N. David Theodore

Keyword(s):

Wafer Bonding ◽

Electrical Characterization ◽

Device Fabrication ◽

High Resistivity ◽

Electrical Behavior ◽

Cross Sectional ◽

Spreading Resistance ◽

Bonded Interface ◽

Transmission Electron ◽

Direct Wafer Bonding

ABSTRACTDirect wafer bonding is a viable technique for fabricating high-voltage devices. An understanding of the microstructure and electrical behavior of the bonded interface is critical for device fabrication. In this paper, we investigated the microstructure of the silicon-to-silicon bonded interface using cross-sectional transmission electron microscopy and the corresponding electrical behavior using spreading resistance probing. Results indicate that oxide precipitates were present at the bonded interface when Czochralski silicon wafer were used in the process. Oxide precipitates were noticeably absent from the bonded interface when float zone wafers were bonded to each other. We find that oxide precipitates at the interface arise not due to the residual oxide at the surface prior to wafer bonding but due to gettering of oxygen from the Czochralski wafer. Spreading resistance measurements show occurrence of a high resistivity region at the bonding interface whether or not oxide precipitates are present.

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Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

Journal of Applied Physics ◽

10.1063/1.5020139 ◽

2018 ◽

Vol 123 (8) ◽

pp. 085701 ◽

Cited By ~ 1

Author(s):

A. Jung ◽

Y. Zhang ◽

Y. Arroyo Rojas Dasilva ◽

F. Isa ◽

H. von Känel

Keyword(s):

Electrical Properties ◽

Wafer Bonding ◽

Room Temperature

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The Influence of Wafer Cleaning Process on the Silicon Surface Roughness

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1109.262 ◽

2015 ◽

Vol 1109 ◽

pp. 262-265

Author(s):

S. Norhafiezah ◽

R.M. Ayub ◽

Mohd Khairuddin Md Arshad ◽

A.H. Azman ◽

M.A. Farehanim ◽

...

Keyword(s):

Surface Roughness ◽

Silicon Wafer ◽

Silicon Surface ◽

Wafer Fabrication ◽

Wafer Surface ◽

Cleaning Process ◽

Cleaning Procedure ◽

Acidic Solutions ◽

Wafer Cleaning ◽

Semiconductor Fabrication

The cleaning process of the silicon wafer becomes one of the most important procedures in semiconductor fabrication. It is acknowledged to remove the contamination on the wafer surface as well as to promote an acceptable surface roughness, prior to performing various deposition methods. The wafer cleaning process which based on hot alkaline and acidic solutions is known as the RCA cleaning. The RCA is still the most important wafer cleaning method used in wafer fabrication industry. In this paper, the effects of various cleaning procedure to the silicon wafer surface roughness are measured using AFM. Subsequently, an optimum cleaning recipe is discussed and proposed.

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Electrical Characterization of Thin PEDOT:PSS Films on Alumina and Thiol–Ene Substrates

Polymers ◽

10.3390/polym13203519 ◽

2021 ◽

Vol 13 (20) ◽

pp. 3519

Author(s):

Dalius Jucius ◽

Rimantas Gudaitis ◽

Algirdas Lazauskas ◽

Viktoras Grigaliūnas

Keyword(s):

Electrical Properties ◽

Electrical Resistance ◽

Room Temperature ◽

Electrical Characterization ◽

The Novel ◽

Alumina Ceramics ◽

Ceramic Substrates ◽

Wide Range ◽

Long Time

Transparent polymer layers that heal minor scratches and maintain the optical properties of the devices for a long time are highly desirable in optoelectronics. This paper presents the results of the electrical characterization of thin PEDOT:PSS films on the novel, optically transparent thiol–ene substrates capable of healing scratches under room-temperature conditions. Electrical properties of the PEDOT:PSS films deposited on the conventional alumina ceramic substrates were also tested for comparative purposes. This study demonstrated that the substrate can have a significant effect on the electrical properties of PEDOT:PSS films, and the electrical resistance of the films on thiol–ene substrates is not as stable as on alumina ceramics. However, the changes in electrical resistance of the films on thiol–ene are small enough over a sufficiently wide range of operating temperatures and relative humidities and allow the application of such bilayers in various polymeric optoelectronic devices.

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Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2005p0064 ◽

2005 ◽

Author(s):

U. Kerst ◽

P. Sadewater ◽

R. Schlangen ◽

C. Boit ◽

R. Leihkauf ◽

...

Keyword(s):

Numerical Simulation ◽

Electrical Properties ◽

Process Parameters ◽

Thermal Effects ◽

Silicon Surface ◽

Ohmic Contacts ◽

Ion Beam ◽

Schottky Barriers ◽

Material Analysis ◽

Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

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