Advanced Methodologies for Backside Circuit Edit

2008 ◽  
Author(s):  
E. O’Donnell ◽  
D. Scott ◽  
T. Malik ◽  
R. Jain ◽  
T. Lundquist ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Process Technology ◽  
Wide Range ◽  
On Chip ◽  
New Devices

Abstract Editing inside an integrated circuit (IC) is critical to debug new devices. Current flipchip circuit edit techniques are limited by spot resolution and chemistry constraints of Focused Ion Beam (FIB) systems. The newly proposed technique for circuit edit (CE) employs FIB to contact circuit nodes directly on transistor level, offering a wide range of applications since it allows accessing every signal on a chip. The general functionality and the influence on chip performance are evaluated for an Intel 65nm process technology.

Integrated Circuit Device Repair Using FIB System: Tips, Tricks, and Strategies

1999 ◽  
Author(s):  
K. N. Hooghan ◽  
K. S. Wills ◽  
P.A. Rodriguez ◽  
S.J. O’Connell
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dead Reckoning ◽  
Physical Damage ◽  
Art Form ◽  
Metal Levels ◽  
Potential Damage ◽  
On Chip ◽  
Beam Currents

Abstract Device repair using Focused Ion Beam(FIB) systems has been in use for most of the last decade. Most of this has been done by people who have been essentially self-taught. The result has been a long learning curve to become proficient in device repair. Since a great deal of the problem is that documentation on this “art form” is found in papers from many different disciplines, this work attempts to summarize all of the available information under one title. The primary focus of FIB device repair is to ensure and maintain device integrity and subsequently retain market share while optimizing the use of the instrument, usually referred to as ‘beam time’. We describe and discuss several methods of optimizing beam time. First, beam time should be minimized while doing on chip navigation to reach the target areas. Several different approaches are discussed: dead reckoning, 3-point alignment, CAD-based navigation, and optical overlay. Second, after the repair areas are located and identified, the desired metal levels must be reached using a combination of beam currents and gas chemistries, and then filled up and strapped to make final connections. Third, cuts and cleanups must be performed as required for the final repair. We will discuss typical values of the beam currents required to maintain device integrity while concurrently optimizing repair time. Maintaining device integrity is difficult because of two potentially serious interactions of the FIB on the substrate: 1) since the beam consists of heavy metal ions (typically Gallium) the act of imaging the surface produces some physical damage; 2) the beam is positively charged and puts some charge into the substrate, making it necessary to use great care working in and around capacitors or active areas such as transistors, in order to avoid changing the threshold voltage of the devices. Strategies for minimizing potential damage and maximizing quality and throughput will be discussed.

Novel Approach of Improving Secondary Electron Detector in FIB System

2018 ◽  
Author(s):  
Steve Wang ◽  
Jim McGinn ◽  
Peter Tvarozek ◽  
Amir Weiss
Keyword(s):  
Integrated Circuit ◽  
Secondary Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vital Role ◽  
Electron Detector ◽  
System A ◽  
Novel Approach

Abstract Secondary electron detector (SED) plays a vital role in a focused ion beam (FIB) system. A successful circuit edit requires a good effective detector. Novel approach is presented in this paper to improve the performance of such a detector, making circuit altering for the most advanced integrated circuit (IC) possible.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

2000 ◽  
Author(s):  
Romain Desplats ◽  
Timothee Dargnies ◽  
Jean-Christophe Courrege ◽  
Philippe Perdu ◽  
Jean-Louis Noullet
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Front Side ◽  
Automatic Determination ◽  
Metal Line ◽  
New Approach ◽  
Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

Sputter Synthesis of Ferroelectric Films and Heterostructures

MRS Bulletin ◽  
1996 ◽  
Vol 21 (6) ◽  
pp. 25-30 ◽  
Author(s):  
O. Auciello ◽  
A.I. Kingon ◽  
S.B. Krupanidhi
Keyword(s):  
Ion Beam ◽  
Random Access ◽  
Chemical Vapor ◽  
Ferroelectric Materials ◽  
Process Technology ◽  
Ferroelectric Films ◽  
Pyroelectric Properties ◽  
Wide Range ◽  
High Dielectric ◽  
New Generation

Ferroelectric films can display a wide range of dielectric, ferroelectric, piezoelectric, electrostrictive, and pyroelectric properties. The potential utilization of these properties in a new generation of devices has driven the intensive studies on the synthesis, characterization, and determination of processing-microstructure-property relationships of ferroelectric thin films during the last five years. In addition there has been an increased drive for integrating ferroelectric film-based heterostructures with different substrate materials to demonstrate numerous devices that exploit the dielectric, ferroelectric, piezoelectric, electrostrictive, and pyroelectric properties of these materials. For example the high dielectric permittivities of perovskite-type materials can be advantageously used in dynamic random-access memories (DRAMs), while the large values of switchable remanent polarization of ferroelectric materials are suitable for nonvolatile ferroelectric random-access memories (NVFRAMs).Various vapor-phase deposition techniques such as plasma and ion-beam sputter deposition (PSD and IBSD, respectively), pulsed laser-ablation deposition (PLAD), electron-beam or oven-induced evaporation for molecular-beam epitaxy (MBE), and chemical vapor deposition (CVD) have been applied to produce ferroelectric films and layered heterostructures. See References 4–7 for recent reviews. However, work is still necessary to optimize the techniques to produce device-quality films on large semiconductor substrates in a way that is fully compatible with existing semiconductor process technology. Therefore research efforts should be focused on the optimization of suitable process methods and on the investigation of processing-composition-microstructure property relationships. These efforts are the focus of this article with emphasis on PSD and IBSD techniques.

High Resolution FIB as a General Materials Science Tool

1998 ◽  
Vol 4 (S2) ◽  
pp. 492-493 ◽  
Author(s):  
M.W. Phaneuf ◽  
J. Li ◽  
T. Malis
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Materials Science ◽  
Ion Beam ◽  
General Purpose ◽  
Ion Source ◽  
Specimen Preparation ◽  
Ion Beam Sputtering ◽  
Imaging Characteristics ◽  
Beam Sputtering

Focused Ion Beam or FIB systems have been used in integrated circuit production for some time. The ability to combine rapid, precision focused ion beam sputtering or gas-assisted ion etching with focused ion beam deposition allows for rapid-prototyping of circuit modifications and failure analysis of defects even if they are buried deep within the chip's architecture. Inevitably, creative TEM researchers reasoned that a FIB could be used to produce site specific parallel-sided, electron transparent regions, thus bringing about the rather unique situation wherein the specimen preparation device often was worth as much as the TEM itself.More recently, FIB manufacturers have concentrated on improving the resolution and imaging characteristics of these instruments, resulting in a more general-purpose characterization tool. The Micrion 2500 FIB system used in this study is capable of 4 nm imaging resolution using either secondary electron or secondary ions, both generated by a 50 kV liquid metal gallium ion source.

scholarly journals An Experiment-Based Profile Function for the Calculation of Damage Distribution in Bulk Silicon Induced by a Helium Focused Ion Beam Process

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2306 ◽  
Author(s):  
Qianhuang Chen ◽  
Tianyang Shao ◽  
Yan Xing
Keyword(s):  
Beam Energy ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Single Crystalline Silicon ◽  
Nanostructure Fabrication ◽  
Profile Function ◽  
Single Crystalline ◽  
Prediction Function ◽  
Wide Range

The helium focused ion beam (He-FIB) is widely used in the field of nanostructure fabrication due to its high resolution. Complicated forms of processing damage induced by He-FIB can be observed in substrates, and these damages have a severe impact on nanostructure processing. This study experimentally investigated the influence of the beam energy and ion dose of He-FIB on processing damage. Based on the experimental results, a prediction function for the amorphous damage profile of the single-crystalline silicon substrate caused by incident He-FIB was proposed, and a method for calculating the amorphous damage profile by inputting ion dose and beam energy was established. Based on one set of the amorphous damage profiles, the function coefficients were determined using a genetic algorithm. Experiments on single-crystalline silicon scanned by He-FIB under different process parameters were carried out to validate the model. The proposed experiment-based model can accurately predict the amorphous damage profile induced by He-FIB under a wide range of different ion doses and beam energies.

Assessment of Deformation using the Focused Ion Beam Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 530-531
Author(s):  
M.G. Burke ◽  
P.T. Duda ◽  
G. Botton ◽  
M. W. Phaneuf
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Site Specificity ◽  
Alloy 600 ◽  
The Past ◽  
Transmission Electron ◽  
Wide Range ◽  
Potential Applications ◽  
Beam Technique ◽  
Significant Attention

Focused Ion Beam (FIB) micromachining techniques have gained significant attention over the past few years as a promising method for the preparation of a variety of metallic and nonmetallic materials for subsequent characterization using transmission electron microscopy (TEM) The advantage of the FIB in terms of site specificity and speed for the preparation of uniform electron transparent sections has opened a wide range of potential applications in materials characterization. The ability to image the sample in the FIB can also provide important microstructural data for materials analysis. In this study, both conventionally electropolished and FIB-ed specimens were prepared in order to characterize the microstructure of a commercially-produced tube of Alloy 600 (approximately Ni-15 Cr-10 Fe- 0.05 C). The electropolished samples were prepared using a solution of 20% HClO4 - 80% CH3OH at ∼-40°C. The FIB sections were obtained from a cross-section of the tube that had been mechanically thinned to ∼100 μm. The section was thinned in a Micrion 2500 FIB system with a Ga ion beam at 50 kV accelerating voltage.

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