Volume Electrical Failure Analysis for Product-Specific Yield Enhancement

2010 ◽  
Author(s):  
Steven Kasapi ◽  
Joy Liao ◽  
Bruce Cory ◽  
Izak Kapilevich ◽  
Richard Portune ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Test Pattern ◽  
New Technology ◽  
Significant Benefit ◽  
Yield Enhancement ◽  
Specific Yield ◽  
Design Knowledge ◽  
Electrical Failure ◽  
Defect Localization ◽  
Technology Nodes

Abstract Yield on specific designs often falls far short of predicted yield, especially at new technology nodes. Product-specific yield ramp is particularly challenging because the defects are, by definition, specific to the design, and often require some degree of design knowledge to isolate the failure. Despite the wide variety of advanced electrical failure analysis (EFA) techniques available today, they are not routinely applied during yield ramp. EFA techniques typically require a significant amount of test pattern customization, fixturing modification, or design knowledge. Unless the problem is critical, there is usually not time to apply advanced EFA techniques during yield ramp, despite the potential of EFA to provide valuable defect insight. We present a volume-oriented workflow integrating a limited set of electrical failure analysis (EFA) techniques. We believe this workflow will provide significant benefit by improving defect localization and identification beyond what is available using test-based techniques.

SRAM Bitcell Defect Identification Methodology Using Electrical Failure Analysis Data

2020 ◽  
Author(s):  
Hyungtae Kim ◽  
Geonho Kim ◽  
Yunrong Li ◽  
Jinyong Jeong ◽  
Youngdae Kim
Keyword(s):  
Failure Analysis ◽  
Technology Development ◽  
New Technology ◽  
Random Access ◽  
Analysis Data ◽  
Test Method ◽  
Design For Test ◽  
Defect Identification ◽  
Electrical Failure ◽  
Efficient Test

Abstract Static Random Access Memory (SRAM) has long been used for a new technology development vehicle because it is sensitive to process defects due to its high density and minimum feature size. In addition, failure location can be accurately predicted because of the highly structured architecture. Thus, fast and accurate Failure Analysis (FA) of the SRAM failure is crucial for the success of new technology learning and development. It is often quite time consuming to identify defects through conventional physical failure analysis techniques. In this paper, we present an advanced defect identification methodology for SRAM bitcell failures with fast speed and high accuracy based on the bitcell transistor analog characteristics from special design for test (DFT) features, Direct Bitcell Access (DBA). This technique has the advantage to shorten FA throughput time due to a time efficient test method and an intuitive failure analysis method based on Electrical Failure Analysis (EFA) without destructive analysis. In addition, all the defects in a wafer can be analyzed and improved simultaneously utilizing the proposed defect identification methodology. Some successful case studies are also discussed to demonstrate the efficiency of the proposed defect identification methodology.

scholarly journals SRAM Bitcell Defect Identification Methodology Using Electrical Failure Analysis Data

2021 ◽  
Author(s):  
Hyungtae Kim ◽  
Geonho Kim ◽  
Yunrong Li ◽  
Jinyong Jeong ◽  
Youngdae Kim
Keyword(s):  
Failure Analysis ◽  
Technology Development ◽  
New Technology ◽  
Random Access ◽  
Analysis Data ◽  
Test Method ◽  
Design For Test ◽  
Defect Identification ◽  
Electrical Failure ◽  
Efficient Test

Abstract Static Random Access Memory (SRAM) has long been used for a new technology development vehicle because it is sensitive to process defects due to its high density and minimum feature size. In addition, failure location can be accurately predicted because of the highly structured architecture. Thus, fast and accurate Failure Analysis (FA) of the SRAM failure is crucial for the success of new technology learning and development. It is often quite time consuming to identify defects through conventional physical failure analysis techniques. In this paper, we present an advanced defect identification methodology for SRAM bitcell failures with fast speed and high accuracy based on the bitcell transistor analog characteristics from special design for test (DFT) features, Direct Bitcell Access (DBA). This technique has the advantage to shorten FA throughput time due to a time efficient test method and an intuitive failure analysis method based on Electrical Failure Analysis (EFA) without destructive analysis. In addition, all the defects in a wafer can be analyzed and improved simultaneously utilizing the proposed defect identification methodology. Some successful case studies are also discussed to demonstrate the efficiency of the proposed defect identification methodology.

scholarly journals SRAM Bitcell Defect Identification Methodology Using Electrical Failure Analysis Data

2021 ◽  
Author(s):  
Hyungtae Kim ◽  
Geonho Kim ◽  
Yunrong Li ◽  
Jinyong Jeong ◽  
Youngdae Kim
Keyword(s):  
Failure Analysis ◽  
Technology Development ◽  
New Technology ◽  
Random Access ◽  
Analysis Data ◽  
Test Method ◽  
Design For Test ◽  
Defect Identification ◽  
Electrical Failure ◽  
Efficient Test

Abstract Static Random Access Memory (SRAM) has long been used for a new technology development vehicle because it is sensitive to process defects due to its high density and minimum feature size. In addition, failure location can be accurately predicted because of the highly structured architecture. Thus, fast and accurate Failure Analysis (FA) of the SRAM failure is crucial for the success of new technology learning and development. It is often quite time consuming to identify defects through conventional physical failure analysis techniques. In this paper, we present an advanced defect identification methodology for SRAM bitcell failures with fast speed and high accuracy based on the bitcell transistor analog characteristics from special design for test (DFT) features, Direct Bitcell Access (DBA). This technique has the advantage to shorten FA throughput time due to a time efficient test method and an intuitive failure analysis method based on Electrical Failure Analysis (EFA) without destructive analysis. In addition, all the defects in a wafer can be analyzed and improved simultaneously utilizing the proposed defect identification methodology. Some successful case studies are also discussed to demonstrate the efficiency of the proposed defect identification methodology.

Intra-Device Defect Localization through EBIC/EBAC Combined with Electrical Nanoprobing for FinFET Devices Composed of Multiple Sub-Elements

2016 ◽  
Author(s):  
Daminda H. Dahanayaka ◽  
Daniel A. Bader ◽  
Dennis P. Prevost ◽  
Michael T. Coster ◽  
Erik F. Mccullen ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Sectional ◽  
Plan View ◽  
Nanoelectronic Devices ◽  
Defect Localization ◽  
Depth Sensitivity ◽  
Sectional Analysis ◽  
Technology Nodes ◽  
Sem Analyses

Abstract Physical failure analysis of nanoelectronic devices is typically performed using plan view or cross-sectional TEM, SEM or SPM techniques. While plan view SPM and SEM analyses are limited by the depth sensitivity of the technique, cross-sectional analysis requires at least approximate localization of the fail location within the device for effective sample preparation. Multi-finger wide 2D planar devices and multi-FIN 3D devices are structures which require an additional step in pinpointing the fail area within the device. This paper describes successful use of EBIC/EBAC techniques to localize the fail location within such devices in both the 22 nm and 14 nm technology nodes.

Statistical Evaluation of Scan Test Diagnosis Results for Yield Enhancement of Logic Designs

2005 ◽  
Author(s):  
Christian Burmer ◽  
Hans-Peter Erb ◽  
Andreas LemMger ◽  
Markus Gruetzner ◽  
Thomas Schwemboeck ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Statistical Approach ◽  
Test Pattern ◽  
Statistical Evaluation ◽  
Standard Test ◽  
Pattern Generation ◽  
Yield Enhancement ◽  
Diagnostic Features ◽  
Analysis Strategies ◽  
Set Up

Abstract During yield ramp, quick turnaround times between production failures and the results of physical failure analysis are essential. In spite of the growing complexity of today's logic designs, a fast defect localization can be done by using diagnostic features implemented within standard test pattern generation tools. The diagnosis result can not only be used for fault localization but also for statistical analysis based on a large number of failing chips. This statistical approach enables the search for systematic yield detractors and leads to a faster product or technology ramp. This paper describes the necessary steps in order to set up statistical scan diagnosis, discusses the main failure analysis strategies and gives experimental results.

Accurate Defect Localization of Stacked Die Devices by Lock-in Thermography

2018 ◽  
Author(s):  
Ke-Ying Lin ◽  
Chih-Yi Tang ◽  
Yu Chi Wang
Keyword(s):  
Failure Analysis ◽  
Defect Modes ◽  
Defect Localization ◽  
Lock In

Abstract The paper demonstrates the moving of lock-in thermography (LIT) spot location by adjusting the lock-in frequency from low to high. Accurate defect localization in stacked-die devices was decided by the fixed LIT spot location after the lock-in frequency was higher than a specific value depending on the depth of the defect in the IC. Physical failure analysis was performed based on LIT results, which provided clear physical defect modes of the stacked-die devices.

ATE Failure Isolation Methodologies for Failure Analysis, Design Debug and Yield Enhancement

1998 ◽  
Author(s):  
D.S. Patrick ◽  
L.C. Wagner ◽  
P.T. Nguyen
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Yield Enhancement ◽  
Production Test ◽  
Final Test ◽  
Critical Design ◽  
The Past ◽  
Product Engineering ◽  
Time Savings ◽  
Analysis Design

Abstract Failure isolation and debug of CMOS integrated circuits over the past several years has become increasingly difficult to perform on standard failure analysis functional testers. Due to the increase in pin counts, clock speeds, increased complexity and the large number of power supply pins on current ICS, smaller and less equipped testers are often unable to test these newer devices. To reduce the time of analysis and improve the failure isolation capabilities for failing ICS, failure isolation is now performed using the same production testers used in product development, multiprobe and final test. With these production testers, the test hardware, program and pattern sets are already available and ready for use. By using a special interface that docks the production test head to failure isolation equipment such as the emission microscope, liquid crystal station and E-Beam prober, the analyst can quickly and easily isolate the faillure on an IC. This also enables engineers in design, product engineering and the waferfab yield enhancement groups to utilize this equipment to quickly solve critical design and yield issues. Significant cycle time savings have been achieved with the migration to this method of electrical stimulation for failure isolation.

Enabling Electro-Optical Failure Analysis within Extreme Compression Test Architecture

2016 ◽  
Author(s):  
Rudolf Schlangen ◽  
Jon Colburn ◽  
Joe Sarmiento ◽  
Bala Tarun Nelapatla ◽  
Puneet Gupta
Keyword(s):  
Failure Analysis ◽  
Compression Test ◽  
Test Pattern ◽  
Pattern Generation ◽  
Output Data ◽  
Test Compression ◽  
Test Loop ◽  
On Chip ◽  
Test Architecture

Abstract Driven by the need for higher test-compression, increasingly many chip-makers are adopting new DFT architectures such as “Extreme-Compression” (XTR, supported by Synopsys) with on-chip pattern generation and MISR based compression of chain output data. This paper discusses test-loop requirements in general and gives Advantest 93k specific guidelines on test-pattern release and ATE setup necessary to enable the most established EFA techniques such as LVP and SDL (aka DLS, LADA) within the XTR test architecture.

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

Dynamic Photon Emission on FinFET Devices Through Novel Scan Test Approaches

2019 ◽  
Author(s):  
Ranganathan Gopinath ◽  
Ravikumar Venkat Krishnan ◽  
Lua Winson ◽  
Phoa Angeline ◽  
Jin Jie
Keyword(s):  
Test Pattern ◽  
Photon Emission ◽  
Pattern Generator ◽  
Lower Probability ◽  
Automated Test Equipment ◽  
Use Patterns ◽  
Infra Red ◽  
Automatic Test Pattern Generator ◽  
Technology Nodes ◽  
Established Technique

Abstract Dynamic Photon Emission Microscopy (D-PEM) is an established technique for isolating short and open failures, where photons emitted by transistors are collected by sensitive infra-red detectors while the device under test is electrically exercised with automated test equipment (ATE). Common tests, such as scan, use patterns that are generated through Automatic Test Pattern Generator (ATPG) in compressed mode. When these patterns are looped for D-PEM, it results in indeterministic states within cells during the load or unload sequences, making interpretation of emission challenging. Moreover, photons are emitted with lower probability and lesser energies for smaller technology nodes such as the FinFET. In this paper, we will discuss executing scan tests in manners that can be used to bring out emission which did not show up in conventional test loops.

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