A Proof for the Possibility of Ce-Oxide from CMP Residuals in Si-Wafers by Analytical TEM

2012 ◽  
Author(s):  
Wayne Zhao ◽  
Liem Do Thanh ◽  
Michael Gribelyuk ◽  
Mary-Ann Zaitz ◽  
Wing Lai
Keyword(s):  
Technology Development ◽  
Early Stage ◽  
Chemical Mechanical Planarization ◽  
Particle Cluster ◽  
Limited Region ◽  
Physical Evidence ◽  
Analytical Tem ◽  
Transmission Electron ◽  
Oxide Particles

Abstract Inclusion of cerium (Ce) oxide particles as an abrasive into chemical mechanical planarization (CMP) slurries has become popular for wafer fabs below the 45nm technology node due to better polishing quality and improved CMP selectivity. Transmission electron microscopy (TEM) has difficulties finding and identifying Ce-oxide residuals due to the limited region of analysis unless dedicated efforts to search for them are employed. This article presents a case study that proved the concept in which physical evidence of Ce-rich particles was directly identified by analytical TEM during a CMP tool qualification in the early stage of 20nm node technology development. This justifies the need to setup in-fab monitoring for trace amounts of CMP residuals in Si-based wafer foundries. The fact that Cr resided right above the Ce-O particle cluster, further proved that the Ce-O particles were from the wafer and not introduced during the sample preparation.

The Development of an Enterprise Realignment Framework for Firms Entering Emerging Markets

2020 ◽  
Vol 2 (1) ◽  
pp. 42-54
Author(s):  
Rebecca De Coster
Keyword(s):  
Value Chain ◽  
Technology Development ◽  
Early Stage ◽  
Case Study Research ◽  
Technology Leadership ◽  
Software Systems ◽  
High Technology Firms ◽  
Collaborative Working ◽  
The Media

Pursuing markets which are highly dynamic may require not only innovation in terms of products or services but also business model changes. This is often the case for firms in fast moving sectors such as the media, telecoms and internet industries. This article reports on case study research where high technology firms at the early stage of a sector lifecycle were studied to gain insights into their innovation strategies, technology development approaches and their accompanying enterprise realignment. The framework developed identifies three levels for enterprise realignment: (1) industry position; (2) application provision; and (3) technology development. The case study firms that were examined supported the majority of the elements that were identified for each level as follows: (1) innovation value chain and technology leadership, (2) product attributes; optimisation; interconnectivity and embedded software systems (ESS) and (3) architecture and collaborative working.

Measuring and Learning from Success and Innovation in Early Stage Technology Development: A Case Study of NASA’s Center Innovation Fund

2018 ◽  
Author(s):  
Stephanie Booth ◽  
Sam C. Berek ◽  
Brittoney Green ◽  
Nikolai A. Joseph ◽  
Emma M. Louden ◽  
...  
Keyword(s):  
Technology Development ◽  
Early Stage ◽  
Innovation Fund

Use of SEM, X-ray analysis and TEM to localize Fe3+ reduction in roots

1988 ◽  
Vol 46 ◽  
pp. 392-393 ◽  
Author(s):  
William P. Wergin ◽  
P. F. Bell ◽  
Rufus L. Chaney
Keyword(s):  
Electron Microscopy ◽  
Root Hairs ◽  
Rapid Reduction ◽  
X Ray ◽  
Physical Evidence ◽  
Transmission Electron ◽  
Young Root ◽  
Insoluble Precipitate ◽  
Uptake And Transport ◽  
Scanning Electron

In dicotyledons, Fe3+ must be reduced to Fe2+ before uptake and transport of this essential macronutrient can occur. Ambler et al demonstrated that reduction along the root could be observed by the formation of a stain, Prussian blue (PB), Fe4 [Fe(CN)6]3 n H2O (where n = 14-16). This stain, which is an insoluble precipitate, forms at the reduction site when the nutrient solution contains Fe3+ and ferricyanide. In 1972, Chaney et al proposed a model which suggested that the Fe3+ reduction site occurred outside the cell membrane; however, no physical evidence to support the model was presented at that time. A more recent study using the PB stain indicates that rapid reduction of Fe3+ occurs in a region of the root containing young root hairs. Furthermore the most pronounced activity occurs in plants that are deficient in Fe. To more precisely localize the site of Fe3+ reduction, scanning electron microscopy (SEM), x-ray analysis, and transmission electron microscopy (TEM) were utilized to examine the distribution of the PB precipitate that was induced to form in roots.

An Overview of Cu Wire Intermetallic Compound Formation and a Corrosion Failure Mechanism

2012 ◽  
Author(s):  
Dongmei Meng ◽  
Laura Buck ◽  
James Cargo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Corrosion Mechanism ◽  
Fundamental Study ◽  
Corrosion Failure ◽  
Transmission Electron ◽  
Intermetallic Compound Formation ◽  
Scanning Transmission ◽  
Low K

Abstract Cu needs a higher level of ultrasound combined with bonding force to be bonded to the Al pad properly, not just because Cu is harder than Au, but it is also harder to initiate intermetallic compounds (IMC) formation during bonding. This increases the chances of damaging the metal/low k stack under the bondpad. This paper presents a fundamental study of IMC as well as one example of a failure mode of Cu/Al bonded devices, all based on detailed analysis using scanning electron microscopy, scanning transmission electron microscopy, energy dispersive spectrometers, and transmission electron microscopy. It presents a case study showing a corrosion mechanism of Cu/Al ballbond after 168hr UHAST stress. It is observed that all Cu9Al4 was consumed, while very little copper aluminide remained after 168 hours of UHAST stressing.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

2006 ◽  
Author(s):  
Tsung-Te Li ◽  
Chao-Chi Wu ◽  
Jung-Hsiang Chuang ◽  
Jon C. Lee
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Gate Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Voltage Stress ◽  
Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

Challenges and Benefits of Product-Like SRAM in Technology Development

2011 ◽  
Author(s):  
Felix Beaudoin ◽  
Stephen Lucarini ◽  
Fred Towler ◽  
Stephen Wu ◽  
Zhigang Song ◽  
...  
Keyword(s):  
Technology Development ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Development Phase ◽  
High Complexity ◽  
Access Memory ◽  
Integration Schemes ◽  
Front End

Abstract For SRAMs with high logic complexity, hard defects, design debug, and soft defects have to be tackled all at once early on in the technology development while innovative integration schemes in front-end of the line are being validated. This paper presents a case study of a high-complexity static random access memory (SRAM) used during a 32nm technology development phase. The case study addresses several novel and unrelated fail mechanisms on a product-like SRAM. Corrective actions were put in place for several process levels in the back-end of the line, the middle of the line, and the front-end of the line. These process changes were successfully verified by demonstrating a significant reduction of the Vmax and Vmin nest array block fallout, thus allowing the broader development team to continue improving random defectivity.

ECG Analysis: A Brief Review

2019 ◽  
Vol 12 ◽  
Author(s):  
Saumendra Kumar Mohapatra ◽  
Mihir Narayan Mohanty
Keyword(s):  
Technology Development ◽  
Accurate Result ◽  
Early Stage ◽  
Heart Diseases ◽  
Short Review ◽  
Disease Diagnosis ◽  
Accurate Analysis ◽  
Ecg Analysis ◽  
Proper Analysis ◽  
Living Being

Background: In recent years cardiac problems found proportional to technology development. Cardiac signal (Electrocardiogram) relates to the electrical activity of the heart of a living being and it is an important tool for diagnosis of heart diseases. Method: Accurate analysis of ECG signal can provide support for detection, classification, and diagnosis. Physicians can detect the disease and start the diagnosis at an early stage. Apart from cardiac disease diagnosis ECG can be used for emotion recognition, heart rate detection, and biometric identification. Objective: The objective of this paper is to provide a short review of earlier techniques used for ECG analysis. It can provide support to the researchers in a new direction. The review is based on preprocessing, feature extraction, classification, and different measuring parameters for accuracy proof. Also, different data sources for getting the cardiac signal is presented and various application area of the ECG analysis is presented. It explains the work from 2008 to 2018. Conclusion: Proper analysis of the cardiac signal is essential for better diagnosis. In automated ECG analysis, it is essential to get an accurate result. Numerous techniques were addressed by the researchers for the analysis of ECG. It is important to know different steps related to ECG analysis. A review is done based on different stages of ECG analysis and its applications in society.

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