A Case Study of Failure Analysis and Root Cause Identification on ESD-Induced Breakdown

2016 ◽  
Author(s):  
Hongmin Liu ◽  
Zhe Li ◽  
Zheng Weng
Keyword(s):  
Failure Analysis ◽  
Short Circuit ◽  
Resistance Change ◽  
Root Cause ◽  
Parametric Testing ◽  
Root Cause Identification ◽  
Failure Location ◽  
Static Discharge ◽  
Field Failure

Abstract This paper describes the detailed process of failure analysis (FA) of a 16-bit transceiver. The FA included six steps: electronic parametric testing, visual inspection, optical beam induced resistance change to isolate failure location, SEM inspection of the breakdown, electro static discharge (ESD) root identification, and ESD test to prove the identification. FA showed that the short circuit was the result of a breakdown between the I/O resistor and the substrate, and the cause of the breakdown was most likely an ESD event. In a series of electrical over stress/ESD tests performed, the field failure signature was replicated with a MM ESD model, thereby identifying the root cause of the ESD failure.

Root Cause Finding of a Diode Leakage Failure Using Scanning Magnetic Microscopy and ToF-SIMS as Key Methods

2006 ◽  
Author(s):  
H. Preu ◽  
W. Mack ◽  
T. Kilger ◽  
B. Seidl ◽  
J. Walter ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Quantum Interference ◽  
Leakage Currents ◽  
Root Cause ◽  
Microelectronic Devices ◽  
Successful Approach ◽  
Magnetic Microscopy ◽  
Leakage Failure ◽  
Root Cause Identification

Abstract One challenge in failure analysis of microelectronic devices is the localization and root cause finding of leakage currents in passives. In this case study we present a successful approach for failure analysis of a diode leakage failure. An analytical flow will be introduced, which contains standard techniques as well as SQUID (superconducting quantum interference device) scanning magnetic microscopy and ToFSIMS as key methods for localization and root cause identification. [1]

Defect Localization and Root Cause Analysis on e-Fuse Read Reliability Failure

2014 ◽  
Author(s):  
Hung Chin Chen ◽  
Chih Yang Tsai ◽  
Shih Yuan Liu ◽  
Yu Pang Chang ◽  
Jian Chang Lin
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Metal Layer ◽  
Ion Beam ◽  
Fault Isolation ◽  
Resistance Change ◽  
Cause Analysis ◽  
Root Cause ◽  
Failure Location ◽  
Rate Of Failure

Abstract Fault isolation is the most important step for Failure Analysis (FA), and it is closely linked with the success rate of failure mechanism finding. In this paper, we will introduce a case that hard to debug with traditional FA skills. In order to find out its root cause, several advanced techniques such as layout tracing, circuit edit and Infrared Ray–Optical Beam Induced Resistance Change (IR-OBIRCH) analysis had been applied. The circuit edit was performed following layout tracing for depositing probing pads by Focused Ion Beam (FIB). Then, IR-OBIRCH analysis with biasing on the two FIB deposited probing pads and a failure location was detected. Finally, the root cause of inter- metal layer bridge was found in subsequent physical failure analysis.

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

Case Study—Failure Analysis of a Multiplexer

2016 ◽  
Author(s):  
Michael Woo ◽  
Marcos Campos ◽  
Luigi Aranda
Keyword(s):  
Failure Analysis ◽  
High Reliability ◽  
Component Failure ◽  
Root Cause ◽  
Knowing That ◽  
Cause Of Failure ◽  
The Cost

Abstract A component failure has the potential to significantly impact the cost, manufacturing schedule, and/or the perceived reliability of a system, especially if the root cause of the failure is not known. A failure analysis is often key to mitigating the effects of a componentlevel failure to a customer or a system; minimizing schedule slips, minimizing related accrued costs to the customer, and allowing for the completion of the system with confidence that the reliability of the product had not been compromised. This case study will show how a detailed and systemic failure analysis was able to determine the exact cause of failure of a multiplexer in a high-reliability system, which allowed the manufacturer to confidently proceed with production knowing that the failure was not a systemic issue, but rather that it was a random “one time” event.

Root Cause Analysis for Pin Leakage

2016 ◽  
Author(s):  
Zhigang Song ◽  
Jochonia Nxumalo ◽  
Manuel Villalobos ◽  
Sweta Pendyala
Keyword(s):  
Failure Analysis ◽  
Root Cause Analysis ◽  
Advanced Technology ◽  
Process Step ◽  
Cause Analysis ◽  
Hard Mask ◽  
Technology Node ◽  
Root Cause ◽  
Tools And Techniques

Abstract Pin leakage continues to be on the list of top yield detractors for microelectronics devices. It is simply manifested as elevated current with one pin or several pins during pin continuity test. Although many techniques are capable to globally localize the fault of pin leakage, root cause analysis and identification for it are still very challenging with today’s advanced failure analysis tools and techniques. It is because pin leakage can be caused by any type of defect, at any layer in the device and at any process step. This paper presents a case study to demonstrate how to combine multiple techniques to accurately identify the root cause of a pin leakage issue for a device manufactured using advanced technology node. The root cause was identified as under-etch issue during P+ implantation hard mask opening for ESD protection diode, causing P+ implantation missing, which was responsible for the nearly ohmic type pin leakage.

Pseudo-Dynamic Fault Isolation Technique Using Backside Emission Microscopy – Case Study, Where All Other Methods Fail

2002 ◽  
Author(s):  
Yoav Weizman ◽  
Ezra Baruch ◽  
Michael Zimin
Keyword(s):  
Failure Analysis ◽  
Process Variations ◽  
Fault Isolation ◽  
Operating Conditions ◽  
Detection Sensitivity ◽  
Isolation Technique ◽  
Root Cause ◽  
Emission Microscopy ◽  
Failure Location ◽  
Noisy Background

Abstract Emission microscopy is usually implemented for static operating conditions of the DUT. Under dynamic operation it is nearly impossible to identify a failure out of the noisy background. In this paper we describe a simple technique that could be used in cases where the temporal location of the failure was identified however the physical location is not known or partially known. The technique was originally introduced to investigate IDDq failures (1) in order to investigate timing related issues with automated tester equipment. Ishii et al (2) improved the technique and coupled an emission microscope to the tester for functional failure analysis of DRAMs and logic LSIs. Using consecutive step-by-step tester halting coupled to a sensitive emission microscope, one is able detect the failure while it occurs. We will describe a failure analysis case in which marginal design and process variations combined to create contention at certain logic states. Since the failure occurred arbitrarily, the use of the traditional LVP, that requires a stable failure, misled the analysts. Furthermore, even if we used advanced tools as PICA, which was actually designed to locate such failures, we believe that there would have been little chance of observing the failure since the failure appeared only below 1.3V where the PICA tool has diminished photon detection sensitivity. For this case the step-by-step halting technique helped to isolate the failure location after a short round of measurements. With the use of logic simulations, the root cause of the failure was clear once the failing gate was known.

Advancement in Data Engineering and Feature Processing Workflow by Using Deep Learning Techniques for the Automation of ESP Failure Root Cause Analyses

2021 ◽  
Author(s):  
Saniya Karnik ◽  
Navya Yenuganti ◽  
Bonang Firmansyah Jusri ◽  
Supriya Gupta ◽  
Prasanna Nirgudkar ◽  
...  
Keyword(s):  
Deep Learning ◽  
Failure Analysis ◽  
Language Processing ◽  
Turnaround Time ◽  
Process Efficiency ◽  
Root Cause ◽  
Feature Processing ◽  
Learning Techniques ◽  
Electrical Submersible Pump ◽  
Root Cause Identification

Abstract Today, Electrical Submersible Pump (ESP) failure analysis is a tedious, human-intensive, and time-consuming activity involving dismantle, inspection, and failure analysis (DIFA) for each failure. This paper presents a novel artificial intelligence workflow using an ensemble of machine learning (ML) algorithms coupled with natural language processing (NLP) and deep learning (DL). The algorithms outlined in this paper bring together structured and unstructured data across equipment, production, operations, and failure reports to automate root cause identification and analysis post breakdown. This process will result in reduced turnaround time (TAT) and human effort thus drastically improving process efficiency.

Subsea Gas Well Late Life Restart Lesson Learned: Failure Analysis and Operating Strategy

2021 ◽  
Author(s):  
Song Wang ◽  
Lawrence Khin Leong Lau ◽  
Wu Jun Tong ◽  
Kun An ◽  
Jiang Nan Duan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Late Life ◽  
Flow Assurance ◽  
Gas Well ◽  
Subsea Pipeline ◽  
Operating Strategy ◽  
Root Cause ◽  
Financial Impacts ◽  
Transient Multiphase Flow

Abstract This paper elucidates the importance of flow assurance transient multiphase modelling to ensure uninterrupted late life productions. This is discussed in details through the case study of shut-in and restart scenarios of a subsea gas well (namely Well A) located in South China Sea region. There were two wells (Well A and Well B) producing steadily prior to asset shut-in, as a requirement for subsea pipeline maintenance works. However, it was found that Well A failed to restart while Well B successfully resumed production after the pipeline maintenance works. Flow assurance team is called in order to understand the root cause of the failed re-start of Well A to avoid similar failure for Well B and other wells in this region. Through failure analysis of Well A, key root cause is identified and associated operating strategy is proposed for use for Well B, which is producing through the same subsea infrastructure. Transient multiphase flow assurance model including subsea Well A, subsea Well B, associated spools, subsea pipeline and subsea riser is developed and fully benchmarked against field data to ensure realistic thermohydraulics representations of the actual asset. Simulation result shows failed restart of Well A and successful restart of Well B, which fully matched with field observations. Further analysis reveals that liquid column accumulated within the wellbore of Well A associates with extra hydrostatic head which caused failed well restart. Through a series of sensitivity analysis, the possibility of successful Well A restart is investigated by manipulating topsides back pressure settings and production flowrates prior to shut-in. These serve as a methodology to systematically analyze such transient scenario and to provide basis for field operating strategy. The analysis and strategy proposed through detailed modelling and simulation serves as valuable guidance for Well B, should shut-in and restart operation is required. This study shows the importance of modelling prior to late life field operations, in order to avoid similar failed well restart, which causes significant production and financial impacts.

scholarly journals RELIABILITY IMPROVEMENT METHODOLOGY FOR CONSUMER PRODUCTS - A CASE STUDY

2013 ◽  
pp. 88-92
Author(s):  
SHAIK HUSSAIN BASHA ◽  
SUDHANGSHU CHAKRAVORTY
Keyword(s):  
Consumer Products ◽  
Design Modification ◽  
Root Cause ◽  
Reliability Improvement ◽  
Failure Data ◽  
World Class ◽  
Warranty Cost ◽  
Field Reliability ◽  
Field Failure

The objective of every industry is to bring world-class quality products to the market in shortest possible time with least expenses. To meet this objective manufacturer’s always remains non compliant with Reliability requirement of the products due to which field failure rate increases and in turn increases the warranty cost. In this work, an attempt has been made to improve the field reliability for consumer product through a proposed step by step Reliability Improvement Methodology. The proposed methodology includes analysis of field failure data, failure analysis for identifying root cause, experimental investigation to confirm root causes, design modification recommendations and improvement validation through accelerated testing. Further, this analysis helps the manufacturers in warranty extension decision making for the existing products and in the improvement of the next generation product’s performance which directly increases the brand image and profits of an organization.

Case Study on Abnormal Electron-Optical Frequency Mapping Phenomena in Failure Analysis

2018 ◽  
Author(s):  
Ang Li ◽  
Ryan Xiao ◽  
Max Guo ◽  
Jinglong Li ◽  
Binghai Liu
Keyword(s):  
Failure Analysis ◽  
Short Circuit ◽  
Mapping Technique ◽  
Optical Frequency ◽  
Substrate Noise ◽  
Noise Current ◽  
High Impedance ◽  
Laser Reflectance ◽  
Circuit Defects

Abstract In recent years, laser reflectance modulation measurements are widely used in failure analysis. Among them, EOFM (Electron-Optical Frequency Mapping) technique is easy to operate and very practical. In this article, some images with abnormal EOFM phenomena and their corresponding defects are showing up, the causes of those abnormal EOFM phenomena are also pointed out. They prove that EOFM function is very effective for discovering open or high-impedance defects on metal trace and pinpointing short-circuit defects. In addition to the two aspects above, there are also some abnormal EOFM phenomena we couldn’t explain perfectly. We studied one of them and proposed two possible causes of the anomaly. After simulation experiment and calculation, it could be basically determined that the abnormal EOFM phenomenon was caused by the substrate noise current.

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