Practicality of Single Microscope Failure Analysis for Fault Isolation, Analysis, and Advanced TEM Sample Preparation by the Integration EBAC and EDS on FIBSEM

2017 ◽  
Author(s):  
John Lindsay ◽  
James Sagar ◽  
James Holland ◽  
Jenny Goulden
Keyword(s):  
Chemical Analysis ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Fault Identification ◽  
X Rays ◽  
Multiple Systems ◽  
Device Failure ◽  
X Ray ◽  
Analysis Workflow ◽  
Complete Failure

Abstract Device failure analysis typically requires multiple systems for fault identification, preparation and analysis. In this paper we discuss the practicalities and limits of using a single FIBSEM system for a complete failure analysis workflow. The theoretical requirements of using a nanomanipulator for both lamella lift out and electrical testing are discussed and the current capabilities of windowless X-rays detectors for chemical analysis demonstrated. When the required resolution for failure analysis exceed the limits of a FIBSEM and TEM is required, the combination of the nanomanipulator and X-ray detector for advanced lift out and thickness controlled thinning techniques are demonstrated to prepare exceptional quality lamellae.

Failure Analysis of Killer Defects and Yield Enhancement of Flat ROM Devices in Wafer Fabrication

2000 ◽  
Author(s):  
Y. N. Hua ◽  
Z. R. Guo ◽  
L. H. An ◽  
Shailesh Redkar
Keyword(s):  
Electron Microscope ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Wafer Fabrication ◽  
X Ray ◽  
Particle Contamination ◽  
Emission Microscopy ◽  
Microscopy Techniques ◽  
Scanning Electron

Abstract In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright Etch, BN+ Etch and scanning electron microscope (SEM) were used for identification and inspection of defects. In addition, energy-dispersive X-ray microanalysis (EDX) was used to determine the composition of the particle or contamination. During failure analysis, seven kinds of killer defects and three killer particles were found in Flat ROM devices. The possible root causes, mechanisms and elimination solutions of these killer defects/particles were also discussed.

Advanced CMOS Device Fault Isolation Using Frequency Mapping on Passive Structures

2013 ◽  
Author(s):  
S.H. Goh ◽  
B.L. Yeoh ◽  
G.F. You ◽  
W.H. Hung ◽  
Jeffrey Lam ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Isolation ◽  
Device Failure ◽  
Functional Failure ◽  
Technology Node ◽  
Defect Localization ◽  
Emission Microscopy ◽  
Scan Chains

Abstract Backside frequency mapping on modulating active in transistors is well established for defect localization on broken scan chains. Recent experiments have proven the existence of frequency signals from passive structures modulations. In this paper, we demonstrate the effectiveness of this technique on a 65 nm technology node device failure. A resistive leaky path leading to a functional failure which, otherwise cannot be isolated using dynamic emission microscopy, is localized in this work to guide follow on failure analysis.

Challenges of System Level Failure Analysis of Electronics in the Automotive Industry

2017 ◽  
Author(s):  
Bence Hevesi
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Automotive Industry ◽  
Root Cause Analysis ◽  
Fault Isolation ◽  
System Level ◽  
Cause Analysis ◽  
Root Cause ◽  
Analysis Workflow

Abstract In this paper, different failure analysis (FA) workflows are showed which combines different FA approaches for fast and efficient fault isolation and root cause analysis in system level products. Two case studies will be presented to show the importance of a well-adjusted failure analysis workflow.

Non Invasive Failure Analysis of Passive Electronic Devices in Wireless Modules Using X-ray Micro Tomography (MicroCT)

2008 ◽  
Author(s):  
Tyler Pendleton ◽  
Luke Hunter ◽  
S. H. Lau
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Electronic Devices ◽  
Interesting Case ◽  
X Rays ◽  
X Ray ◽  
Case Examples ◽  
Non Invasive ◽  
Novel Approach ◽  
Micro Tomography

Abstract Conventional microCTs or 3D x-ray upgrades from existing 2D x-ray systems have two major drawbacks when they are used for failure analysis of advanced packages: Insufficient resolution to image small (1 to 5 microns) materials and the lack of imaging contrast to visualize cracks, whiskers, and defects within low Z materials. This paper discusses some of the failure analysis (FA) case studies of wireless modules using a high resolution micro x-ray CT (XCT). These examples show the value of high resolution XCT as a novel approach to some common package level defects, including some interesting case examples, where failure mechanisms have been uncovered which could not have been done, using conventional means. The non-invasive FA technique for RF modules technique has been shown to dramatically improve the FA engineers' chances of identifying defects over conventional 2D x-rays and avoid the need for physical and tedious cross sectioning of these devices.

Use of 3D X-Ray Microscopy for BEOL and Advanced Packaging Failure Analysis

2017 ◽  
Author(s):  
Christian Schmidt ◽  
Stephen T. Kelly ◽  
Ingrid De Wolf
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Short Introduction ◽  
Basic Principles ◽  
X Ray ◽  
Line Feature ◽  
Advanced Packaging ◽  
New Challenges ◽  
Semiconductor Packages

Abstract With the growing complexity and interconnect density of modern semiconductor packages, package level FA is also facing new challenges and requirements. 3D X-Ray Microscopy (XRM) is considered a key method to fulfill these requirements and enable high success FA yield. After a short introduction into the basic principles of lab-based X-Ray tomography, 2 different approaches of X-Ray investigations are discussed and an integration into the daily FA flow is proposed. In the first example, fault isolation on a fully packaged device is demonstrated using a stacked die device. In the second example, a newly developed sample preparation flow in combination with Nanoscale 3D X-Ray Microscopy for Chip-Package-Interaction and Back-end-of-line feature imaging is introduced.

Characterization and Failure Analysis of 3D Integrated Semiconductor Devices—Novel Tools for Fault Isolation, Target Preparation and High Resolution Material Analysis

2010 ◽  
Author(s):  
Frank Altmann ◽  
Matthias Petzold ◽  
Christian Schmidt ◽  
Roland Salzer ◽  
Cathal Cassidy ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
High Rate ◽  
Target Preparation ◽  
Integrated Devices ◽  
Analysis Workflow ◽  
Silicon Vias

Abstract In this paper we will introduce novel methodical approaches for material and failure analysis of 3D integrated devices. The potential and advantages of the new concepts and tools will be demonstrated for flip-chip-like interconnects but in addition, for the first time, for Through Silicon Vias (TSV). The employed techniques combine non-destructive fault localization with efficient and accurate target preparation to get access for following microstructure diagnostics, forming a subsequent failure analysis workflow. The concept presented here involves the application of improved Lock-In Thermography (LIT), and three different innovative concepts of high rate Focused Ion Beam (FIB) techniques.

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