An Advanced Diagnosis Flow for SRAMs

2017 ◽  
Author(s):  
Tien-Phu Ho ◽  
Eric Faehn ◽  
Arnaud Virazel ◽  
Alberto Bosio ◽  
Patrick Girard
Keyword(s):  
Failure Analysis ◽  
Manufacturing Process ◽  
Single Chip ◽  
Automated Diagnosis ◽  
Representative Case ◽  
Preliminary Results ◽  
Accurate Localization ◽  
Analysis Phase ◽  
Yield Learning

Abstract In modern electronic designs, more and more memories are embedded in a single chip. With the latest technologies, defects due to the manufacturing process are more prone to occur in the periphery of the memory. Obtaining a fast and accurate localization of such defects has become much more difficult with traditional diagnosis approaches that do not allow a fast-enough yield learning and improvement. This paper describes a new and automated diagnosis flow for SRAMs to determine the localization of any given defect and thus, to precisely guide the Failure Analysis phase. Based on the electrical and topological fault signatures obtained through traditional methods, each potential fault on the identified active nets is automatically simulated to retrieve the best defect candidates. This paper also presents preliminary results on a representative case study.

New Techniques for Logic Fault Diagnosis with a Case Study on the 440BX Chipset

1999 ◽  
Author(s):  
Srikanth Venkataraman ◽  
Scott B. Drummonds
Keyword(s):  
Fault Diagnosis ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Automated Diagnosis ◽  
New Techniques ◽  
Design And Manufacturing ◽  
Cause Of Failure

Abstract Logic fault diagnosis or fault isolation is the process of analyzing failing random logic portions of a chip to isolate the cause of failure. Fault diagnosis or fault isolation (FI) plays an important role in multiple applications at different stages of design and manufacturing. Most currently deployed FI techniques for random logic fault isolation include physical techniques with limited automated diagnosis followed by e-beam and/or laser voltage probing (LVP) on packaged parts. This paper will present the methodology and FI results obtained by executing automated scan based diagnosis on a chipset product (440BX). The logic diagnosis techniques used are presented along with simulation and Failure Analysis (FA) results

‘A Routh O’ Auld Nick-Nackets’ – the antiquarian collection of John Rae

2015 ◽  
Vol 36-37 (1) ◽  
pp. 163-183
Author(s):  
Paul Taylor
Keyword(s):  
United States ◽  
Nineteenth Century ◽  
Social Context ◽  
Moral Education ◽  
The United States ◽  
Representative Case ◽  
National Museums ◽  
The Individual ◽  
The University

John Rae, a Scottish antiquarian collector and spirit merchant, played a highly prominent role in the local natural history societies and exhibitions of nineteenth-century Aberdeen. While he modestly described his collection of archaeological lithics and other artefacts, principally drawn from Aberdeenshire but including some items from as far afield as the United States, as a mere ‘routh o’ auld nick-nackets' (abundance of old knick-knacks), a contemporary singled it out as ‘the best known in private hands' (Daily Free Press 4/5/91). After Rae's death, Glasgow Museums, National Museums Scotland, the University of Aberdeen Museum and the Pitt Rivers Museum in Oxford, as well as numerous individual private collectors, purchased items from the collection. Making use of historical and archive materials to explore the individual biography of Rae and his collection, this article examines how Rae's collecting and other antiquarian activities represent and mirror wider developments in both the ‘amateur’ antiquarianism carried out by Rae and his fellow collectors for reasons of self-improvement and moral education, and the ‘professional’ antiquarianism of the museums which purchased his artefacts. Considered in its wider nineteenth-century context, this is a representative case study of the early development of archaeology in the wider intellectual, scientific and social context of the era.

Failure Analysis Case Study of a 1.5 Meter Space Flex Harness

2017 ◽  
Author(s):  
Erick Kim ◽  
Kamjou Mansour ◽  
Gil Garteiz ◽  
Javeck Verdugo ◽  
Ryan Ross ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Field Of View ◽  
Area Of Interest ◽  
Air Stream ◽  
Novel Method ◽  
Temperature Controlled ◽  
Non Destructive ◽  
Failure Site

Abstract This paper presents the failure analysis on a 1.5m flex harness for a space flight instrument that exhibited two failure modes: global isolation resistances between all adjacent traces measured tens of milliohm and lower resistance on the order of 1 kiloohm was observed on several pins. It shows a novel method using a temperature controlled air stream while monitoring isolation resistance to identify a general area of interest of a low isolation resistance failure. The paper explains how isolation resistance measurements were taken and details the steps taken in both destructive and non-destructive analyses. In theory, infrared hotspot could have been completed along the length of the flex harness to locate the failure site. However, with a field of view of approximately 5 x 5 cm, this technique would have been time prohibitive.

Classification of IC Process Deformation Characteristics Using Memory Fail Bitmaps

2004 ◽  
Author(s):  
T. Zanon ◽  
W. Maly
Keyword(s):  
Geometric Characterization ◽  
Deformation Characteristics ◽  
Analysis Study ◽  
Preliminary Results ◽  
Failure Patterns ◽  
Yield Learning ◽  
Sram Memory ◽  
Viable Approach ◽  
Ic Technology

Abstract Building a portfolio of deformations is the key step for building better defect models for the test and yield learning domain. A viable approach to achieve this goal is through geometric characterization and classification of failure patterns found on memory fail bitmaps. In this paper, we present preliminary results on how to build such a portfolio of deformations for an IC technology of interest based on a fail bitmap analysis study conducted on large, modern SRAM memory products.

Failure Analysis of CDM-ESD Damage in a GaAs RFIC

2000 ◽  
Author(s):  
Amy Poe ◽  
Steve Brockett ◽  
Tony Rubalcava
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Production Test ◽  
Analysis Techniques ◽  
Device Model ◽  
Charged Device ◽  
Subsequent Failure

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

2006 ◽  
Author(s):  
Tsung-Te Li ◽  
Chao-Chi Wu ◽  
Jung-Hsiang Chuang ◽  
Jon C. Lee
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Gate Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Voltage Stress ◽  
Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

Die-Level Scanning Capacitance Microscopy Fault Isolation on SOI Fin-FET Devices for Advanced Semiconductor Nodes

2018 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Tanya Schaeffer ◽  
Yuting Wei ◽  
Satish Kodali ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Scanning Capacitance Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Abstract It is widely acknowledged that Atomic force microscopy (AFM) methods such as conductive probe AFM (CAFM) and Scanning Capacitance Microscopy (SCM) are valuable tools for semiconductor failure analysis. One of the main advantages of these techniques is the ability to provide localized, die-level fault isolation over an area of several microns much faster than conventional nanoprobing methods. SCM, has advantages over CAFM in that it is not limited to bulk technologies and can be utilized for fault isolation on SOI-based technologies. Herein, we present a case-study of SCM die-level fault isolation on SOI-based FinFET technology at the 14nm node.

Sub-20nm Device Voltage-Sensitive SRAM Characterization and Failure Analysis

2018 ◽  
Author(s):  
Seng Nguon Ting ◽  
Hsien-Ching Lo ◽  
Donald Nedeau ◽  
Aaron Sinnott ◽  
Felix Beaudoin
Keyword(s):  
Failure Analysis ◽  
High Performance ◽  
Yield Loss ◽  
Technology Development ◽  
High Density ◽  
High K ◽  
Yield Learning ◽  
Oxide Deposition ◽  
Edge Profile ◽  
High K Dielectric

Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard bit-cells failures. It can only be accomplished by extensively leveraging yield, layout analysis and fault localization in sub-micron devices. In this paper, we describe the successful debugging of the yield gap observed between the High Density and the High Performance bit-cells. The SRAM yield loss is observed to be strongly modulated by different active sizing between two pull up (PU) bit-cells. Failure analysis focused at the weak point vicinity successfully identified abnormal poly edge profile with systematic High k Dielectric shorts. Tight active space on High Density cells led to limitation of complete trench gap-fill creating void filled with gate material. Thanks to this knowledge, the process was optimized with “Skip Active Atomic Level Oxide Deposition” step improving trench gap-fill margin.

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