scholarly journals Semiconductor Failure Analysis in Automotive Industry at BMW: from X-Ray Microscopy to ToF-SIMS Measurements on a STEM Lamella

Author(s):  
D. Braun ◽  
S. Diez ◽  
J. Kopitzke

Abstract Considering the growing need for the use of semiconductors in the automotive industry, this paper aims to describe the analyzing process from an automotive manufacturer point of view. The use of X-Ray Microscopy and a combination of ToF-SIMS and FIB are shown.

Author(s):  
J.D. Shelburne ◽  
G.M. Roomans

Proper preparative procedures are a prerequisite for the validity of the results of x-ray microanalysis of biological tissue. Clinical applications of x-ray microanalysis are often concerned with diagnostic problems and the results may have profound practical significance for the patient. From this point of view it is especially important that specimen preparation for clinical applications is carried out correctly.Some clinical problems require very little tissue preparation. Hair, nails, and kidney and gallbladder stones may be examined and analyzed after carbon coating. High levels of zinc or copper in hair may be indicative of dermatological or systemic diseases. Nail clippings may be analyzed (as an alternative to the more conventional sweat test) to confirm a diagnosis of cystic fibrosis. X-ray microanalysis in combination with scanning electron microscopy has been shown to be the most reliable method for the identification of the components of kidney or gallbladder stones.A quantitatively very important clinical application of x-ray microanalysis is the identification and quantification of asbestos and other exogenous particles in lung.


Author(s):  
Hua Younan

Abstract A failure analysis flow is developed for surface contamination, corrosion and underetch on microchip Al bondpads and it is applied in wafer fabrication. SEM, EDX, Auger, FTIR, XPS and TOF-SIMS are used to identify the root causes. The results from carbon related contamination, galvanic corrosion, fluorine-induced corrosion, passivation underetch and Auger bondpad monitoring will be presented. The failure analysis flow will definitely help us to select suitable methods and tools for failure analysis of Al bondpad-related issues, identify rapidly possible root causes of the failures and find the eliminating solutions at both wafer fabrication and assembly houses.


Author(s):  
Y. N. Hua ◽  
Z. R. Guo ◽  
L. H. An ◽  
Shailesh Redkar

Abstract In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright Etch, BN+ Etch and scanning electron microscope (SEM) were used for identification and inspection of defects. In addition, energy-dispersive X-ray microanalysis (EDX) was used to determine the composition of the particle or contamination. During failure analysis, seven kinds of killer defects and three killer particles were found in Flat ROM devices. The possible root causes, mechanisms and elimination solutions of these killer defects/particles were also discussed.


Author(s):  
Bob Wettermann

Abstract As the pitch and package sizes of semiconductor devices have shrunk and their complexity has increased, the manual methods by which the packages can be re-bumped or reballed for failure analysis have not kept up with this miniaturization. There are some changes in the types of reballing preforms used in these manual methods along with solder excavation techniques required for packages with pitches as fine as 0.3mm. This paper will describe the shortcomings of the previous methods, explain the newer methods and materials and demonstrate their robustness through yield, mechanical solder joint strength and x-ray analysis.


Author(s):  
Carlo Grilletto ◽  
Steve Hsiung ◽  
Andrew Komrowski ◽  
John Soopikian ◽  
Daniel J.D. Sullivan ◽  
...  

Abstract This paper describes a method to "non-destructively" inspect the bump side of an assembled flip-chip test die. The method is used in conjunction with a simple metal-connecting "modified daisy chain" die and makes use of the fact that polished silicon is transparent to infra-red (IR) light. The paper describes the technique, scope of detection and examples of failure mechanisms successfully identified. It includes an example of a shorting anomaly that was not detectable with the state of the art X-ray equipment, but was detected by an IR emission microscope. The anomalies, in many cases, have shown to be the cause of failure. Once this has been accomplished, then a reasonable deprocessing plan can be instituted to proceed with the failure analysis.


Author(s):  
Dima A. Smolyansky

Abstract The visual nature of Time Domain Reflectometry (TDR) makes it a very natural technology that can assist with fault location in BGA packages, which typically have complex interweaving layouts that make standard failure analysis techniques, such as acoustic imaging and X-ray, less effective and more difficult to utilize. This article discusses the use of TDR for package failure analysis work. It analyzes in detail the TDR impedance deconvolution algorithm as applicable to electronic packaging fault location work, focusing on the opportunities that impedance deconvolution and the resulting true impedance profile opens up for such work. The article examines the TDR measurement accuracy and the comparative package failure analysis, and presents three main considerations for package failure analysis. It also touches upon the goal and the task of the failure analysts and TDR's specific signatures for the open and short connections.


2020 ◽  
Vol 71 (8) ◽  
pp. 21-26
Author(s):  
Elena-Emilia Oprescu ◽  
Cristina-Emanuela Enascuta ◽  
Elena Radu ◽  
Vasile Lavric

In this study, the SO42-/TiO2-La2O3-Fe2O3 catalyst was prepared and tested in the conversion of fructose to ethyl levulinate . The catalyst was characterized from the point of view of the textural analysis, FT-IR analysis, acid strength distribution, X-ray powder diffraction and pyridine adsorption IR spectra. The influence of the reaction parameters on the ethyl levulinate yield was study. The maximum yield of 37.95% in levulinate esters was obtained at 180 �C, 2 g catalyst and 4 h reaction time. The effect of ethyl levulinate addition to diesel-biodiesel blend in different rates, i.e, 0.5, 1, 2.5, 5 (w.t %) on density, kinematic viscosity and flash point was evaluated and compared with the European specification.


1985 ◽  
Vol 50 (10) ◽  
pp. 2139-2145
Author(s):  
Alexander Muck ◽  
Eva Šantavá ◽  
Bohumil Hájek

The infrared spectra and powder X-ray diffraction patterns of polycrystalline YPO4-YCrO4 samples are studied from the point of view of their crystal symmetry. Mixed crystals of the D4h19 symmetry are formed over the region of 0-30 mol.% YPO4 in YCrO4. The Td → D2d → D2 or C2v(GS eff) correlation is appropriate for both PO43- and CrO43- anions.


Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 570
Author(s):  
Olga Sánchez ◽  
Manuel Hernández-Vélez

ZnOTe compounds were grown by DC magnetron cosputtering from pure Tellurium (Te) and Zinc (Zn) cathodes in O2/Ar atmosphere. The applied power on the Zn target was constant equal to 100 W, while the one applied on the Te target took two values, i.e., 5 W and 10 W. Thus, two sample series were obtained in which the variable parameter was the distance from the Te targets to the substrate. Sample compositions were determined by Rutherford Backscattering Spectroscopy (RBS) experiments. Structural analysis was done using X-Ray diffraction (XRD) spectrometry and the growth of the hexagonal w-ZnO phase was identified in the XRD spectra. RBS results showed high bulk homogeneity of the samples forming ZnOTe alloys, with variable Te molar fraction (MF) ranging from 0.48–0.6% and from 1.9–3.1% for the sample series obtained at 5 W and 10 W, respectively. The results reflect great differences between the two sample series, particularly from the structural and optical point of view. These experiments point to the possibility of Te doping ZnO with the permanence of intrinsic defects, as well as the possibility of the formation of other Te solid phases when its content increases. The results and appreciable variations in the band gap transitions were detected from Photoluminescence (PL) measurements.


2019 ◽  
Vol 15 (S356) ◽  
pp. 96-96
Author(s):  
Eleonora Sani

AbstractI present a detailed study of ionized outflows in a large sample of 650 hard X-ray detected AGN. Taking advantage of the legacy value of the BAT AGN Spectroscopic Survey (BASS, DR1), we are able to reveal the faintest wings of the [OIII] emission lines associated with outflows. The sample allows us to derive the incidence of outflows covering a wide range of AGN bolometric luminosity and test how the outflow parameters are related with various AGN power tracers, such as black hole mass, Eddington ratio, luminosity. I’ll show how ionized outflows are more frequently found in type 1.9 and type 1 AGN (50% and 40%) with respect to the low fraction in type 2 AGN (20%). Within such a framework, I’ll demonstrate how type 2 AGN outflows are almost evenly balanced between blue- and red-shifted winds. This, in strong contrast with type 1 and type 1.9 AGN outflows which are almost exclusively blue-shifted. Finally, I’ll prove how the outflow occurrence is driven by the accretion rate, whereas the dependence of outflow properties with respect to the other AGN power tracers happens to be quite mild.


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