scholarly journals Material Contrast of Scanning Electron and Ion Microscope Images of Metals

2008 ◽  
Vol 16 (1) ◽  
pp. 6-11 ◽  
Author(s):  
T. Suzuki ◽  
M. Kudo ◽  
Y. Sakai ◽  
T. Ichinokawa
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Ion Source ◽  
Transmission Electron ◽  
Material Contrast ◽  
Ion Microscopy ◽  
Ion Impact ◽  
Object Of Study ◽  
Scanning Electron

The rapid technical development of FIM (Focused Ion Beam) technology has spawned an increase in spatial resolution capability in scanning ion microscopy (SIM) technology. Furthermore, FIM has been used for preparation of thin specimens in transmission electron microscopy and micro-fabrication of electronic devices in the semiconductor industry. Recently, a scanning ion microscope with a helium field ion source has been developed. Thus, the contrast formation of emission electron images in scanning ion microscopy has been the object of study for analyzing images of materials specimens, similar to the theory behind scanning electron microscope (SEM) contrast formation. Furthermore, whether the electron emission yield γ induced by ion impact is periodic or non-periodic as a function of Z2 (the atomic number of the target) has not been well studied in the low energy region from several keV to the several tens of keV values used in SIM.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

Formation of Sub-100 NM GE Wires on Si by E-Beam Evaporation/Lithography

1995 ◽  
Vol 380 ◽  
Author(s):  
C. Deng ◽  
J. C. Wu ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
M. N. Wybourne
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates ◽  
Novel Technique ◽  
Atomic Force ◽  
Transmission Electron ◽  
First Time ◽  
Scanning Electron

ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.

Alleviating Sample Charging during FIB Operation

2015 ◽  
Author(s):  
Q. Liu ◽  
H.B. Kor ◽  
Y.W. Siah ◽  
C.L. Gan
Keyword(s):  
Electron Microscopy ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Milling Process ◽  
Front Side ◽  
Dual Beam ◽  
Transmission Electron

Abstract Dual-beam focused ion beam (DB-FIB) system is widely used in the semiconductor industry to prepare cross-sections and transmission electron microscopy (TEM) lamellae, modify semiconductor devices and verify layout. One of the factors that limits its success rate is sample charging, which is caused by a lack of conductive path to discharge the accumulated charges. In this paper, an approach using an insitu micromanipulator was investigated to alleviate the charging effects. With this approach, a simple front side semiconductor device modification was carried out and the corresponding stage current was monitored to correlate to the milling process.

Structure of vapor-phase deposited Al-Ge thin films and Al-Ge intermediate layer bonding of Al-based microchannel structures

2009 ◽  
Vol 24 (2) ◽  
pp. 544-555 ◽  
Author(s):  
Fanghua Mei ◽  
W.J. Meng ◽  
J. Hiller ◽  
D.J. Miller
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Bonding Temperature ◽  
Building Blocks ◽  
Interface Region ◽  
Intermediate Layers ◽  
Transmission Electron ◽  
Scanning Electron

Al-based high-aspect-ratio microscale structures (HARMS) are basic building blocks for all-Al microdevices. Bonding of Al-based HARMS is essential for device assembly. In this paper, bonding of Al-based HARMS to flat Al plates using Al-Ge thin film intermediate layers is investigated. The structure of sputter codeposited Al-Ge thin films was studied by high-resolution transmission electron microscopy as a function of the average film composition. The structure of the interface region between Al-based HARMS bonded to flat Al plates is studied by combining focused ion beam sectioning and scanning electron microscopy. An extended bonding interface region, ∼100 μm in width, is observed and suggested to result from liquidus/solidus reactions as well as diffusion of Ge in solid Al at the bonding temperature of 500 °C. The extended interface region is suggested to be beneficial to Al-Al bonding via Al-Ge intermediate layers.

scholarly journals Thickness Control and Targeting in Large Scale Automated XTEM Lamella Preparation

2021 ◽  
Author(s):  
Vikas Dixit ◽  
Bryan Gauntt ◽  
Taehun Lee
Keyword(s):  
Large Scale ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Key Factors ◽  
Thickness Control ◽  
Precise Control ◽  
Transmission Electron ◽  
Thin Lamella

Abstract The automation of both, transmission electron microscopy (TEM) imaging and lamella preparation using focused ion beam (FIB) has gathered an enormous momentum in last few years, especially in the semiconductor industry. The process development of current and future microprocessors requires a precise control on the patterning of a multitude of ultrafine layers, several of which are in the order of nanometers. The statistical accuracy and reliability of TEM based metrology and failure analysis of such complex and refined structures across the wafer needs a large-scale sampling, which is feasible only with an automation. An inherent requirement of automating TEM sample preparation entails a need of a robust and repeatable methodology that provides both, a good thickness control and an accurate targeting, on the intended feature in the ultra-thin lamella. In this work, key factors that impact both these aspects of a TEM lamella preparation will be discussed. In addition, steps needed to ensure that FIB toolsets consistently and reliably produce high quality samples, will be highlighted.

Automatic TEM Sample Preparation

1999 ◽  
Author(s):  
Wayne D. Kaplan ◽  
Kim Kisslinger ◽  
Ron Oviedo ◽  
Efrat M. Raz ◽  
Colin Smith
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Target Area ◽  
Transmission Electron ◽  
Sample Edge ◽  
Added Benefit ◽  
Specific Distance

Abstract The rising demand in the semiconductor industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy (TEM). However, conventional TEM sample preparation may be difficult and time-consuming, and depending on the operator may result in a low yield of quality specimens. One solution to this problem is the use of focused ion beam (FIB) milling for the final stage of TEM sample preparation. However, specimens have to be mechanically thinned prior to FIB processing, and the need to characterize specific devices requires a pre-FIB preparation method to isolate specific regions on the wafer. An innovative and automated solution that isolates specific devices and prepares TEM specimens for subsequent thinning by FIB has been developed. Based on controlled microcleaving technology, the system automatically performs the pre-FIB preparation in less than 30 minutes. An important added benefit is that the target area to be analyzed can be positioned at a specific distance from the sample edge, thereby facilitating the final FIB milling stage. The thinned specimen is automatically packaged for subsequent FIB processing and TEM. Details of the method and examples showing TEM results from tungsten filled vias are presented.

scholarly journals Automated TEM Sample Preparation

2000 ◽  
Vol 8 (5) ◽  
pp. 14-19 ◽  
Author(s):  
Wayne D. Kaplan ◽  
Efrat Raz ◽  
Colin Smith
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Milling Time ◽  
Preparation Method ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Sample Edge ◽  
Specific Distance

The rising demand in the semiconductor industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy (TEM). However, conventional TEM sample preparation can be difficult and time-consuming, and, depending on the operator, may result in a low yield of quality specimens. One solution to this problem is the use of focused ion beam (FIB) milling for the final stage of TEM sample preparation. However, specimens have to be mechanically thinned prior to FIB and the need to characterize specific devices requires a pre-FIB preparation method that can target specific features on the wafer. We will discuss an innovative and automated solution that isolates specific devices and prepares TEM specimens for subsequent FIB thinning. The complete pre-FIB preparation takes less than 30 minutes and yields a sample in which the targeted feature is positioned a specific distance from the sample edge, thereby minimizing final FIB milling time. The output specimen is automatically packaged for FIB milling and TEM analysis. We also present drawings of the process flow and examples showing TEM results from tungsten filled vias.

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