scholarly journals Study the Effect of Water Content on the Structure of Electrochemically Prepared TiO2 Nanotubes

Author(s):  
Sara Al-Waisawy ◽  
Ahmed Kareem Abdullah ◽  
Hadi A. Hamed ◽  
Ali A. Al-bakri

In this research, the pure titanium foil was treated in glycerol base electrolyte with 0.7 wt.% NH4F and a small amount of H2O at 17 V for 2 hours by electrochemical anodization process in order to prepare Titania nanotube arrays at room temperature (~25 ºC), different water content was added to the electrolyte as a tube enhancing agent. The high density uniform arrays are prepared by using organized and well aligned these tubes. The average size of tube diameter, ranging from 57 to 92 nm which found it increases with increasing water content, and the length of the tube ranging from 2.76 to 4.12 µm, also found to increase with increasing water content and ranging in size of wall thickness from 23 to 35 nm. A possible growth mechanism is presented. The X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were utilized to study the structure and morphology of the Titania films.

Metals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1059
Author(s):  
Patricia Capellato ◽  
Daniela Sachs ◽  
Lucas V. B. Vasconcelos ◽  
Miriam M. Melo ◽  
Gilbert Silva ◽  
...  

The current metallic biomaterial still presents failures associated with the bulk alloy and the interface of material/human body. In previous studies, titanium alloy with tantalum showed the elastic modulus decrease in comparison with that of commercially pure (cp) titanium. In this study, surface modification on Ti-30Ta alloy was investigated. Titanium and tantalum were melted, homogenized, cold-worked by a rotary swaging process and solubilized. The anodization process was performed in electrolyte contained glycerol + NH4F 0.25% at 30 V using seven different durations—4 h, 5 h, 6 h, 7 h, 8 h, 9 h, and 10 h and annealed at 530 °C for 1 h. The surface topography was characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) measurements, X-ray diffraction analysis (XRD), and contact angle. From the results, we conclude the time of anodization process influences the shape and morphology of the anodized layer. The 5 h-anodization process produced a smooth and porous surface. The 4-, 6-, 7-, 8-, 9-, and 10-h conditions showed nanotubes morphology. All surfaces are hydrophilic (<90°). Likewise, all the investigated conditions present anatase phase. So, this surface modification presents potential for biomedical application. However, more work needs to be done to better understand the influence of time on the anodization process.


2013 ◽  
Vol 802 ◽  
pp. 104-108 ◽  
Author(s):  
Buagun Samran ◽  
Pacharee Krongkitsiri ◽  
Saichol Pimmongkol ◽  
Sopon Budngam ◽  
Udom Tipparach

TiO2 nanotube arrays were successfully synthesized by the anodization method of Ti foils in electrolyte containing the mixtures of ethylene glycol (EG), ammonium fluoride (0.3 wt % NH4F) and deionized water (2 Vol % H2O). A constant dc power supply at 50 V was used anodization process with different anodizing times. The resultant samples were annealed at 450 °C for 2 h. TiO2 nanotube arrays were studied by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The prepared TiO2 NTs has diameter in 50-200 nm. The minimum of diameter TiO2 nanotube arrays was approximately 50 nm for 1 h of anodization process.


2021 ◽  
Vol 2063 (1) ◽  
pp. 012012
Author(s):  
A H Mohammed ◽  
A N Naje

Abstract Simple process (exploding wire technique) was used to Prepared sliver nanoparticles (AgNPs). The graphene sheet was added to AgNPs with different concentrations (0.002g/ml and 0.01g/ml). well dispersion of AgNPs are achieved by simple chemistry process. The samples were characterized by ultraviolet-visible spectroscopy (UV-Vis), x-ray diffraction (XRD), atomic force microscopy (AFM) and Field emission scanning electron microscope (FESEM). The results showed a wide band absorption of AgNPs-graphene (AgNPs-GN) extended from VU to IR region, surface plasmon resonance (SPR) absorption peak position for the AgNPs at (350-600) nm, XRD confirmed the clear distribution of the peaks attributed to polycrystalline for AgNPs appeared at 20=38.14°, 44.27°, 64.33, and 77.37° respectively and AgNPs-GN at 2θ=26.51° and 54.65°. The AFM showed that AgNPs have uniformly distribution on the surface of graphene sheet. The average size of AgNPs was confirmed by around (50-80) nm by FESEM and the AgNPs-GN have average particle size (20-40) nm. The AgNPs-GN could become prominent candidate for optoelectronic applications.


2005 ◽  
Vol 20 (2) ◽  
pp. 292-294 ◽  
Author(s):  
Zhaoming Zhang

Epitaxial anatase TiO2 thin films were successfully grown on lattice-matched SrTiO3 (001) substrates by a novel hydrothermal method at very low temperatures (120–200 °C). This method is extremely simple and inexpensive in that the SrTiO3 substrate itself provides the source material for the TiO2 film. X-ray diffraction confirmed the high crystallinity and phase purity of the anatase films. The epitaxial relationship between the film and the substrate was determined as (001)[100]anatase // (001)[100]SrTiO3. Atomic force microscopy revealed the average size of the anatase crystallites as approximately 50 to 200 nm.


2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.


2017 ◽  
Vol 54 (4) ◽  
pp. 655-658
Author(s):  
Andrei Bejan ◽  
Dragos Peptanariu ◽  
Bogdan Chiricuta ◽  
Elena Bicu ◽  
Dalila Belei

Microfibers were obtained from organic low molecular weight compounds based on heteroaromatic and aromatic rings connected by aliphatic spacers. The obtaining of microfibers was proved by scanning electron microscopy. The deciphering of the mechanism of microfiber formation has been elucidated by X-ray diffraction, infrared spectroscopy, and atomic force microscopy measurements. By exciting with light of different wavelength, florescence microscopy revealed a specific optical response, recommending these materials for light sensing applications.


Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.


2020 ◽  
Vol 92 (6) ◽  
pp. 977-984
Author(s):  
Mayya V. Kulikova ◽  
Albert B. Kulikov ◽  
Alexey E. Kuz’min ◽  
Anton L. Maximov

AbstractFor previously studied Fischer–Tropsch nanosized Fe catalyst slurries, polymer compounds with or without polyconjugating structures are used as precursors to form the catalyst nanomatrix in situ, and several catalytic experiments and X-ray diffraction and atomic force microscopy measurements are performed. The important and different roles of the paraffin molecules in the slurry medium in the formation and function of composite catalysts with the two types of aforementioned polymer matrices are revealed. In the case of the polyconjugated polymers, the alkanes in the medium are “weakly” coordinated with the metal-polymer composites, which does not affect the effectiveness of the polyconjugated polymers. Otherwise, alkane molecules form a “tight” surface layer around the composite particles, which create transport complications for the reagents and products of Fischer-Tropsch synthesis and, in some cases, can change the course of the in situ catalyst formation.


Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 823
Author(s):  
Shizheng Yang ◽  
Hongliang Lv ◽  
Likun Ai ◽  
Fangkun Tian ◽  
Silu Yan ◽  
...  

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).


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