scholarly journals Characteristics of an Overstressed Discharge of Nanosecond Duration between Electrodes of Chalcopyrite in High Pressure Nitrogen

2020 ◽  
Vol 4 (1) ◽  
Keyword(s):  
Thin Films ◽  
Quartz Substrate ◽  
Emission Spectra ◽  
Spectral Lines ◽  
Nanosecond Discharge ◽  
Nanosecond Duration ◽  
Main Decomposition ◽  
Singly Charged ◽  
Quartz Substrates ◽  
Discharge Method

The electrical and optical characteristics of the overstressed nanosecond discharge in nitrogen at a pressure of 202 kPa, which was ignited between electrodes from chalcopyrite (CuInSe2 ), are presented. Upon sputtering of chalcopyrite electrodes, CuInSe2 compound vapors have been introduced into the discharge plasma. Chalcopyrite molecules were partially destroyed in the plasma and partially deposited in the form of thin films on a quartz substrate, which was placed near the system of discharge electrodes. The main decomposition products of a chalcopyrite molecule in an overstressed nanosecond discharge were found, which were in excited and ionized states and which, in the plasma emission spectra, were mainly represented by atoms and singly charged copper and indium ions. The spectral lines of copper and indium are proposed, which can be used to control the deposition of thin films of chalcopyrite in real time. On quartz substrates, gas-discharge method was used to synthesize thin films based on the CuInSe2 compound, which effectively absorbed light in a wide spectral range (200-800 nm), which opens up prospects for their use in photovoltaic devices.

scholarly journals Characteristics of the Nanosecond Overvoltage Discharge Between CuInSe2 Chalcopyrite Electrodes in Oxygen-Free Gas Media

2020 ◽  
Vol 65 (5) ◽  
pp. 400
Author(s):  
A. K. Shuaibov ◽  
A. I. Minya ◽  
A. A. Malinina ◽  
R. V. Gritsak ◽  
A. N. Malinin
Keyword(s):  
Boltzmann Kinetic Equation ◽  
Electrode System ◽  
Spectral Lines ◽  
Spectral Interval ◽  
Dielectric Substrates ◽  
Singly Charged ◽  
Semiconductor Electrodes ◽  
Quartz Substrates ◽  
Charged Ions ◽  
Discharge Method

The characteristics of the nanosecond overvoltage discharge ignited between semiconductor electrodes based on the CuInSe2 chalcopyrite compound in the argon and nitrogen atmospheres at gas pressures of 5.3–101 kPa are reported. Due to the electrode sputtering, chalcopyrite vapor enters the discharge plasma, so that some CuInSe2 molecules become destroyed, whereas the others become partially deposited in the form of thin films on solid dielectric substrates located near the plasma electrode system. The main products of the chalcopyrite molecule decomposition in the nanosecond overvoltage discharge are determined; these are atoms and singly charged ions of copper and indium in the excited and ionized states. Spectral lines emitted by copper and indium atoms and ions are proposed, which can be used to control the deposition of thin chalcopyrite films in the real-time mode. By numerically solving the Boltzmann kinetic equation for the electron energy distribution function, the electron temperature and density in the discharge, the specific losses of a discharge power for the main electronic processes, and the rate constants of electronic processes, as well as their dependences on the parameter E/N, are calculated for the plasma of vapor-gas mixtures on the basis of nitrogen and chalcopyrite. Thin chalcopyrite films that effectively absorb light in a wide spectral interval (200–800 nm) are synthesized on quartz substrates, by using the gas-discharge method, which opens new prospects for their application in photovoltaic devices.

scholarly journals Characteristics and Parameters of Overstressed Nanosecond Discharge Plasma in Air between an Electrode from Aluminum and Electrode from Chalcopyrite (CuInSe2)

2021 ◽  
Vol 57 (5) ◽  
pp. 34-51
Author(s):  
A.K. Shuaibov ◽  
◽  
A.Y. Minya ◽  
A.A. Malinina ◽  
R.V Gritsak ◽  
...  
Keyword(s):  
Thin Films ◽  
Degradation Products ◽  
Strong Electric Field ◽  
Emission Spectra ◽  
Spectral Lines ◽  
Specific Power ◽  
Aluminum Electrode ◽  
Nanosecond Discharge ◽  
Plasma Parameters ◽  
Discharge Gap

The characteristics and parameters of an overstressed high-current discharge with a duration of 100–150 ns in air, which was ignited between an aluminum electrode and a chalcopyrite electrode (CuInSe2), are presented. The air pressure was 13.3 and 101.3 kPa. In the process of microexplosions of inhomogeneities on the working surfaces of electrodes in a strong electric field, aluminum vapors and chalcopyrite vapors were introduced into the interelectrode gap, which creates the prerequisites for the synthesis of thin films based on quaternary chalcopyrite – CuAlInSe2. The films synthesized from the products of electrode destruction were deposited on a quartz plate at a distance of 2–3 cm from the center of the discharge gap. The current and voltage pulses across the discharge gap of d = 1 mm, as well as the pulse energy input into the discharge, were investigated. The plasma emission spectra were studied, which made it possible to establish the main decay products of the chalcopyrite molecule and the energy states of atoms and singly charged ions of aluminum, copper and indium, which are formed in the discharge. The reference spectral lines of atoms and ions of aluminum, copper, and indium were established, which can be used to control the process of deposition of thin films of quaternary chalcopyrite. Thin films were synthesized from the degradation products of chalcopyrite molecules and aluminum vapors, which may have the composition of the quaternary chalcopyrite CuAlInSe2; the transmission spectra of the synthesized films in the spectral range of 200–800 nm were studied. By the method of numerical simulation of the plasma parameters of an overstressed nanosecond discharge based on aluminum and chalcopyrite vapors in air by solving the Boltzmann kinetic equation for the electron energy distribution function, the temperature and density of electrons, the specific power losses of the discharge for the main electronic processes and their rate constants depending on the value parameter E/N for plasma of vapor-gas mixtures based on air, aluminum vapor and ternary chalcopyrite were modulated.

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

scholarly journals Low temperature photoionized Ne plasmas induced by laser-plasma EUV sources

2015 ◽  
Vol 33 (2) ◽  
pp. 193-200 ◽  
Author(s):  
A. Bartnik ◽  
H. Fiedorowicz ◽  
T. Fok ◽  
R. Jarocki ◽  
M. Szczurek ◽  
...  
Keyword(s):  
Spectral Range ◽  
Extreme Ultraviolet ◽  
Emission Spectra ◽  
Spectral Lines ◽  
Wide Spectral Range ◽  
Spectral Maximum ◽  
Radiation Beam ◽  
Photoionized Plasmas ◽  
Singly Charged ◽  
Charged Ions

AbstractIn this work, two laser-produced plasma (LPP) sources – extreme ultraviolet (EUV) and a LPP soft X-ray (SXR) source were used to create Ne photoionized plasmas. A radiation beam was focused onto a gas stream, injected into a vacuum chamber synchronously with the radiation pulse. EUV radiation spanned a wide spectral range with pronounced maximum centered at λ≈11 nm, while in case of the SXR source spectral maximum was at λ≈1.4 nm. Emission spectra of photoionized plasmas created this way were measured in a wide spectral range λ = 10–100 nm. The dominating spectral lines originated from singly charged ions (Ne II) and neutral atoms (Ne I). For the highest radiation fluence, spectral lines originating from Ne III and even Ne IV species were detected. Differences between the experimental spectra, obtained for all irradiation conditions, were analyzed. They were attributed either to different fluence or spectral distribution of driving photons.

Ferroelectric (Pb,La)TiO3 Thin Films Prepared by Metalorganic Chemical Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
Z. C. ◽  
B.S. Kwak ◽  
A. Erbil
Keyword(s):  
Thin Films ◽  
Quartz Substrate ◽  
Chemical Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Raman Modes ◽  
Quartz Substrates ◽  
Physical Phenomena ◽  
Mocvd Technique ◽  
Metalorganic Chemical

ABSTRACTRecently, we reported results of an investigation of the preparation of highly textured (Pb1−xLax)TiO3 (PLT) thin films grown on Si(100) by metalorganic chemical deposition (MOCVD) [1]. In this paper, we discuss an extension of this work to the growth of PLT thin films on fused quartz substrates by the MOCVD technique. A series of PLT films with x between 0 and 0.32 were prepared. Characterization by x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and Raman scattering has been performed on these ferroelectric thin films. XRD indicated the polycrystalline nature of the PLT films and the variation of their tetragonality. The film thickness and La composition were determined by RBS. Raman spectra, measured at 300 and 80 K, showed features of the PLT film and quartz substrate. By using a “difference Raman” technique, more PLT modes were shown. The variations of the PLT Raman modes with the La composition and the measurement temperature were studied. Related physical phenomena and problems are discussed.

scholarly journals Enhanced the Performance of Fluorescence Gas Sensor of Porphyrin Dye by Using TiO2 Nanoparticles

2008 ◽  
Vol 55-57 ◽  
pp. 269-272 ◽  
Author(s):  
Nurul Huda Yusoff ◽  
Muhamad Mat Salleh ◽  
Muhammad Yahaya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Volatile Organic Compounds ◽  
Tio2 Nanoparticles ◽  
Gas Sensor ◽  
Organic Compounds ◽  
Quartz Substrate ◽  
Emission Spectra ◽  
Dip Coating ◽  
Volatile Organic

Fluorescence gas sensor was developed to identify the presence of volatile organic compounds by using porphyrin dye thin film. The porphyrin dye used was iron (III) meso-tetraphenylporphine chloride. The porphyrin thin film was deposited on quartz substrate using self-assembly through dip coating technique. The sensing properties of the thin films toward volatile organic compounds; ethanol, acetone and 2-propanol were studied using luminescence spectrometer. In presence of air and volatile organic compounds, thin films produced different emission spectra and ease for chemical identification process. To improved the sensing performance, TiO2 nanoparticles colloid were prepared, coated with porphyrin dye and deposited as thin film. It was found that the thin film of TiO2 nanoparticles coated with porphyrin dye has more intensive interaction toward volatile organic compounds than porphyrin thin film, and improved the selective property. This may be due to the nanostructured thin film provided more surface area for dye molecules to react with VOCs.

Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering

2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Near Infrared ◽  
Fluorescence Emission ◽  
Emission Spectra ◽  
Sem Images ◽  
Fluorescence Emission Spectra ◽  
Glass Substrates ◽  
Zinc Nitride ◽  
Direct Band

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.

scholarly journals Atomic physics and solar polarimetry

2017 ◽  
Vol 95 (9) ◽  
pp. 847-854 ◽  
Author(s):  
P.G. Judge
Keyword(s):  
Adaptive Optics ◽  
Atomic Physics ◽  
Solar Physics ◽  
Polarized Light ◽  
Initial Study ◽  
Spectral Lines ◽  
Calibration Data ◽  
Science Data ◽  
On Line ◽  
Singly Charged

Major outstanding problems in solar physics relate to solar magnetism. Spectropolarimetry offers the best, and sometimes only, method of obtaining accurate measurements of the Sun’s magnetic field. New 1.5–2 m class telescopes with adaptive optics have come on line, and the Daniel K. Inouye 4 m Solar Telescope (DKIST) will begin observing in 2019. The calibration of polarized light entering such a large and polarizing ground-based telescope represents difficult challenges. This paper explores how special polarization properties of particular atomic transitions may provide calibration data, augmenting or even avoiding time-consuming calibration observations, as well as science data. This initial study concludes that solar spectral lines exist with special polarization properties, allowing the telescope calibration to be determined. The Sun’s visible and infrared spectrum is dominated by lines of neutral atoms and singly charged ions of iron and other complex atoms. Both solar and atomic physics should jointly benefit from telescopic advances, as observers explore regimes of broader wavelength ranges, and higher spatial resolutions and polarimetric sensitivities, than they have reached in the past. Further work is in progress to identify particular transitions of practical use to aid in calibrations.

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