TEM examinations of ion implanted silicon using cross-section specimens

1978 ◽  
Vol 36 (1) ◽  
pp. 364-365
Author(s):  
J. Fletcher ◽  
G.R booker
Keyword(s):  
Ion Implantation ◽  
Cross Section ◽  
Room Temperature ◽  
Lower Layer ◽  
Dose Range ◽  
Inert Atmosphere ◽  
Free Zone ◽  
Basic Work ◽  
Ion Implanted

Basic work is being performed on the damage structures resulting from ion implantation of (111) Si slices. Specimens were implanted at room temperature with either 60keV Ne+ in the dose range 1 x 1014 to 5 x l015 cm-2, or 150keV As+ in the range 3 x 1014 to 7.5 x 1015 cm-2, and subsequently annealed in an inert atmosphere at temperatures up to 1000°C. These were thinned for 100kV TEM examination to give both ‘plan’ and ‘90° cross-section' specimens. Results are described for four different aspects of the work.First, Fig.l shows the damage for different Ne+ doses (800°C anneal). For 2.5 x 1014( cm-2, the damage consists of a band of loops and rods, with a defect-free zone close to the surface. For 1 x 1015 cm -2, there are two separate damage layers. The upper layer comprises mainly micro-twin lamellae, and the lower layer loops and rods similar to those in Fig.la.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Doping of GaN by ion implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

AbstractIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 °C occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 µm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Formation and Effects of Secondary Defects in Ion implanted Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Jack Washburn
Keyword(s):  
Activation Energy ◽  
Electron Microscope ◽  
Low Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Laser Annealing ◽  
Subsequent Annealing ◽  
Interface Migration ◽  
Kinetics Of ◽  
Ion Implanted

ABSTRACTThe clustering of isolated interstitial silicon, implanted atoms, and vacant lattice sites produced by low temperature and room temperature ion implantation during subsequent annealing is reviewed. An electron microscope method for studying the kinetics of the amorphous to crystalline transformation in silicon is described. The technique is applied to measurement of the activation energy for interface migration and the formation of microtwins for different growth directions. A very brief review of the effects of laser annealing after ion implantation is included.

scholarly journals Modification of diazoquinone-novolac photoresist films by boron ion implantation

2020 ◽  
pp. 62-69
Author(s):  
Dmitrii I. Brinkevich ◽  
Uladislau S. Prasalovich ◽  
Yury N. Yankouski
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Ion Beam ◽  
Plane Deformation ◽  
Dose Range ◽  
Current Mode ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Positive Photoresist ◽  
Stretching Vibrations

Diazoquinone-novolac photoresist films implanted with B+ ions were studied by the method of attenuated total reflection (ATR). Films of positive photoresist FP9120 with a thickness h of 1.0 and 2.5 mm were deposited by centrifuging on p-type silicon plates with (111) orientation. Implantation with 60 keV B+ions in the dose range of 1015–1016 cm–2 in the constant ion current mode (current density 4 mA/cm2 ) was carried out at room temperature in a residual vacuum not worse than 10–5 Pa using the «Vesuvius-6» ion beam accelerator. The attenuated total reflection spectra were recorded in the range 400 – 4000 cm–1 by ALPHA spectrophotometer (Bruker Optik GmbH, Germany) at room temperature. It was shown that ion implantation leads to intensive transformation of the photoresist beyond the range of ions, which is characterized by the appearance in the spectrum of intense bands with peaks at 2151 and 2115 cm–1, due to stretching vibrations of double cumulative bonds, in particular С——С——О. In the implanted samples, a shift to the low-energy region of the maxima of the stretching vibrations of C—H bonds, plane deformation vibrations of O—H bonds and pulsating vibrations of the carbon skeleton of aromatic rings as well as the redistribution of intensities between closely spaced maxima, were observed.

Room-Temperature Migration of Ion-Implanted Boron in Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
E. J. H. Collait ◽  
K. Weemers ◽  
D. J. Gravesteijn ◽  
J. G. M. van Berkum ◽  
N. E. B. Cowern
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
First Time ◽  
Ion Implanted

ABSTRACTRoom temperature migration and clustering behaviour of implanted boron into silicon has been investigated by performing ion implantation of the 11B isotope into MBE-grown in-situ 10B-doped epitaxial Si-layers. We, for the first time, show that a fraction of the implanted boron migrates very deep into the bulk of the Si with substitutional 10B acting as trap centers for the migrating 11B.

The influence of nanostructure formation on properties for Cr implanted PET

2001 ◽  
Vol 665 ◽  
Author(s):  
Wu Yuguang ◽  
Zhang Tonghe ◽  
Zhang Huixing ◽  
Zhang Xiaoji ◽  
Cui Ping ◽  
...  
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Metal Ion ◽  
Ion Beam ◽  
Dose Range ◽  
Surface Hardness ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Ion Beam Modification ◽  
Ion Implanted

ABSTRACTPolyethylene terephthalate (PET) has been modified by Cr ion implantation with a dose range from 1×1016to 2×1017ions /cm2 using a metal vapor vacuum arc MEVVA source. The surface morphology was observed by atomic force microscopy (AFM). The Cr atom precipitation was found. The changes of the structure and composition have been observed with transmission electron microscope (TEM). The TEM photos revealed the presence of Cr nano-meter particles on the implanted PET. It is believed that the change would cause the improvement of the conductive properties and wear resistance. The electrical properties of PET have been improved after metal ion implantation. The resistivity of Cr ion implanted PET decreased obviously with an increase of ion dose. When the metal ion dose with 2×1017cm−2 was implanted into PET, the resistivity of PET could be less than 0.1 Ωm. But when Si or C ions with same dose are implanted PET, the resistivity of PET would be up to several Ωm. The result show that the resistivity of Cr ion implanted sample is obviously lower than that of Si- and C-implanted one. After Cr implantation, the surface hardness and modulus could be increased. The property of the implanted PET has modified greatly. The hardness and modulus of Cr implanted PET with dose of 2×1017/cm2 is 9.5 and 3.1 times greater than that of pristine PET. So we can see that wear resistance improved greatly. The Cr ion beam modification mechanism of PET will be discussed.

Characterization of Ion Implanted Silicon by Spectroscopic Ellipsometry and Cross Section Transmission Electron Microscopy

1983 ◽  
Vol 27 ◽  
Author(s):  
P. J. Mcmarr ◽  
K. Vedam ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Cross Sections ◽  
Spectroscopic Ellipsometry ◽  
Dose Range ◽  
Depth Profiles ◽  
Transmission Electron ◽  
Ion Implanted

ABSTRACTThis paper deals with the application of spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (XTEM), to the characterization of damaged surface layers in ion implanted Si single crystal. Si samples of 2–6Ω·cm resistivity and <100> orientation were implanted with 28Si+ ions in the dose range of 1.0 × 1016–1.5 × 1016 ions/cm2 using ion energies of 100 and 200 keV. Ion current densities were varied from 6 to 200 μA/cm2. Depth profiles of the implanted samples were evaluated from the spectroscopic ellipsometry data. These calculated profiles were compared with the TEM micrographs of the cross sections of the samples. Excellent agreement is obtained between the two characterization techniques. The characteristics of the depth profiles of the samples, as established by the two techniques, is shown to be the result of annealing occuring during implantation.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Studies of metaphase chromosomes in the scanning transmission x-ray microscope: Image fidelity, radiation damage and specimen preparation

1992 ◽  
Vol 50 (2) ◽  
pp. 1038-1039
Author(s):  
Shawn Williams ◽  
Xiaodong Zhang ◽  
Susan Lamm ◽  
Jack Van’t Hof
Keyword(s):  
Visible Light ◽  
Radiation Damage ◽  
Cross Section ◽  
Imaging Techniques ◽  
Dose Range ◽  
Specimen Preparation ◽  
X Rays ◽  
Metaphase Chromosomes ◽  
X Ray ◽  
Scanning Transmission

The Scanning Transmission X-ray Microscope (STXM) is well suited for investigating metaphase chromosome structure. The absorption cross-section of soft x-rays having energies between the carbon and oxygen K edges (284 - 531 eV) is 6 - 9.5 times greater for organic specimens than for water, which permits one to examine unstained, wet biological specimens with resolution superior to that attainable using visible light. The attenuation length of the x-rays is suitable for imaging micron thick specimens without sectioning. This large difference in cross-section yields good specimen contrast, so that fewer soft x-rays than electrons are required to image wet biological specimens at a given resolution. But most imaging techniques delivering better resolution than visible light produce radiation damage. Soft x-rays are known to be very effective in damaging biological specimens. The STXM is constructed to minimize specimen dose, but it is important to measure the actual damage induced as a function of dose in order to determine the dose range within which radiation damage does not compromise image quality.

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