Data-Driven Modeling of Low Frequency Noise Using Capture-Emission Energy Maps

A new approach for modeling low frequency noise is presented to enable the predictions of noise behavior from negative bias temperature instability (NBTI). The noise model is based on a capture-emission energy (CEE) map describing the probability density function of widely distributed defect capture-emission activation energies. To enlarge the capture-emission energy window and to perform the accurate estimation of the recoverable component of CEE, the Gaussian mixture model (GMM) is applied to the CEE map. This approach provides an efficient identification of noise sources and an in-depth noise analysis under both stationary and cyclo-stationary conditions.

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Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.854.21 ◽

2013 ◽

Vol 854 ◽

pp. 21-27 ◽

Cited By ~ 1

Author(s):

N.P. Garbar ◽

Valeriya N. Kudina ◽

V.S. Lysenko ◽

S.V. Kondratenko ◽

Yu.N. Kozyrev

Keyword(s):

High Surface ◽

Low Frequency ◽

Noise Model ◽

Frequency Noise ◽

Low Frequency Noise ◽

Physical Processes ◽

Noise Sources ◽

Noise Component ◽

First Time ◽

Noise Models

Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.

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Low Frequency Noise Analysis in Advanced CMOS Devices

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.324.441 ◽

2011 ◽

Vol 324 ◽

pp. 441-444 ◽

Cited By ~ 6

Author(s):

Jalal Jomaah ◽

Majida Fadlallah ◽

Gerard Ghibaudo

Keyword(s):

Experimental Data ◽

Noise Analysis ◽

Low Frequency ◽

Deep Submicron ◽

Electrical Noise ◽

Frequency Noise ◽

Low Frequency Noise ◽

Noise Sources ◽

The Impact ◽

Mobility Fluctuations

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

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