scholarly journals Synthesis and Properties of Electrically Conductive/Nitrogen Grain Boundaries Incorporated Ultrananocrystalline Diamond (N-UNCD) Thin Films Grown by Microwave Plasma Chemical Vapor Deposition (MPCVD)

2021 ◽  
Vol 11 (18) ◽  
pp. 8443
Author(s):  
Michelle Salgado-Meza ◽  
Guillermo Martínez-Rodríguez ◽  
Pablo Tirado-Cantú ◽  
Eliel Eduardo Montijo-Valenzuela ◽  
Rafael García-Gutiérrez
Keyword(s):  
Grain Boundaries ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Electrical Measurements ◽  
Plasma Chemical ◽  
Electrically Conductive ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Ultrananocrystalline Diamond

Research and development have been performed to investigate the effect of total pressure and microwave power on the electrical conductivity of nitrogen (N) atoms’ grain boundaries incorporated ultrananocrystalline diamond (N-UNCD) films grown by microwave plasma chemical vapor deposition (MPCVD). Insertion of N atoms into the UNCD film’s grain boundaries induces N atoms chemical reaction with C-atoms dangling bonds, resulting in release of electrons, which induce electrical conductivity. Four-point probe electrical measurements show that the highest electrically conductive N-UNCD films, produced until now, exhibit electrical resistivity of ~1 Ohm.cm, which is orders of magnitude lower than the ≥106 Ohm.cm for undoped ultrananocrystalline diamond (UNCD) films. X-ray diffraction analysis and Raman spectroscopy revealed that the growth of the N-UNCD films by MPCVD do not produce graphite phase but only crystalline nanodiamond grains. X-ray photoelectron spectroscopy (XPS) analysis confirmed the presence of nitrogen (N) in the N-UNCD films and the high conductivity (no electrical charging is observed during XPS analysis) shown in electrical measurements.

Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition

2005 ◽  
Vol 480-481 ◽  
pp. 71-76 ◽  
Author(s):  
Jin Chun Jiang ◽  
Wen Juan Cheng ◽  
Yang Zhang ◽  
He Sun Zhu ◽  
De Zhong Shen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition

Carbon nitride films were grown on Si substrates by a microwave plasma chemical vapor deposition method, using mixture of N2, CH4 and H2 as precursor. Scanning electron microscopy shows that the films consisted of a large number of hexagonal crystallites. The dimension of the largest crystallite is about 3 µm. The X-ray photoelectron spectroscopy suggests that nitrogen and carbon in the films are bonded through hybridized sp2 and sp3 configurations. The X-ray diffraction pattern indicates that the major part of the films is composed of α-, β-, pseudocubic C3N4 and graphitic C3N4. The Raman peaks match well with the calculated Raman frequencies of α- and β-C3N4, revealing the formation of the α- and β-C3N4 phase.

Morphology of heavily B-doped diamond films

1993 ◽  
Vol 8 (11) ◽  
pp. 2845-2857 ◽  
Author(s):  
Koichi Miyata ◽  
Kazuo Kumagai ◽  
Kozo Nishimura ◽  
Koji Kobashi
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Surface Morphologies

B-doped diamond films were synthesized by microwave plasma chemical vapor deposition using a mixture of methane (0.5% or 1.2%) and diborane (B2H6) below 50 ppm on either Si substrates or undoped diamond films that had been synthesized using 0.5% or 1.2% methane. The surface morphologies of the synthesized films were observed by Secondary Electron Microscopy, and the infrared absorption and Raman spectra were measured. It was found that when diborane concentration was low, B-doped films preferred (111) facets. On the other hand, high diborane concentrations resulted in a deposition of needle-like material that was identified as graphite by x-ray diffraction.

Growth of highly (111)-oriented, highly coalesced diamond films on platinum (111) surface: A possibility of heteroepitaxy

1996 ◽  
Vol 11 (12) ◽  
pp. 2955-2956 ◽  
Author(s):  
Yoshihiro Shintani
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Scanning Electron

A highly (111)-oriented, highly coalesced diamond film was grown on platinum (111) surface by microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy and x-ray diffraction analyses revealed that the (111) diamond facets were azimuthally oriented epitaxially with respect to the orientation of the Pt(111) domain underneath, with the neighboring facets of diamond being coalesced with each other. The film was confirmed as diamond using Raman spectroscopy.

CRYSTALLINE CARBON NITRIDE FILMS GROWN BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1091-1095 ◽  
Author(s):  
W. T. ZHENG ◽  
X. WANG ◽  
T. DING ◽  
X. T. LI ◽  
W. D. FEI ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition

The carbon nitride films were deposited on single crystalline Si(001) and polycrystalline diamond substrates using microwave plasma chemical vapor deposition (MPCVD) with CH4+N2 as well as CH4+NH3 mixtures as the reactive gas source, respectively. Different CH4/N2 and CH4/NH3 gas ratios were tested. The results showed that carbon nitride films with different nitrogen content could more readily be obtained using a mixture of CH4/N2 rather than CH4/NH3. The films grown by different CH4/N2 ratios showed different morphology, which was revealed by scanning electron microscopy (SEM). The crystalline carbon nitride films containing silicon were realized using a CH4:N2 = 1:100 ratio. X-ray photoelectron spectroscopy (XPS), Auger electron microscopy (AES), Raman spectroscopy, and X-ray diffraction were used to characterize the composition and chemical bonding of the deposited films.

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

2008 ◽  
Vol 47 (4) ◽  
pp. 3050-3052
Author(s):  
Masataka Moriya ◽  
Yuji Matsumoto ◽  
Yoshinao Mizugaki ◽  
Tadayuki Kobayashi ◽  
Kouichi Usami
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Organized
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