Effects of the Nitrogen Flow Ratio and Substrate Bias on the Mechanical Properties of W–N and W–Si–N Films

The reactive gas flow ratio and substrate bias voltage are crucial sputtering parameters for fabricating transition metal nitride films. In this study, W–N films were prepared using sputtering with nitrogen flow ratios (f) of 0.1–0.5. W–N and W–Si–N films were then prepared using an f level of 0.4 and substrate bias varying from 0 to −150 V by using sputtering and co-sputtering, respectively. The variations in phase structures, bonding characteristics, mechanical properties, and wear resistance of the W–N and W–Si–N films were investigated. The W–N films prepared with nitrogen flow ratios of 0.1–0.2, 0.3, and 0.4–0.5 displayed crystalline W, amorphous W–N, and crystalline W2N, respectively. The W–N films prepared using a nitrogen flow ratio of 0.4 and substrate bias voltages of −50 and −100 V exhibited favorable mechanical properties and high wear resistance. The mechanical properties of the amorphous W–Si–N films were not related to the magnitude of the substrate bias.