scholarly journals Browsers’ Private Mode: Is It What We Were Promised?

Computers ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 165
Author(s):  
Kris Hughes ◽  
Pavlos Papadopoulos ◽  
Nikolaos Pitropakis ◽  
Adrian Smales ◽  
Jawad Ahmad ◽  
...  

Web browsers are one of the most used applications on every computational device in our days. Hence, they play a pivotal role in any forensic investigation and help determine if nefarious or suspicious activity has occurred on that device. Our study investigates the usage of private mode and browsing artefacts within four prevalent web browsers and is focused on analyzing both hard disk and random access memory. Forensic analysis on the target device showed that using private mode matched each of the web browser vendors’ claims, such as that browsing activity, search history, cookies and temporary files that are not saved in the device’s hard disks. However, in volatile memory analysis, a majority of artefacts within the test cases were retrieved. Hence, a malicious actor performing a similar approach could potentially retrieve sensitive information left behind on the device without the user’s consent.

2015 ◽  
Vol 12 (2) ◽  
pp. 757 ◽  
Author(s):  
Erkan Baran ◽  
Huseyin Çakır ◽  
Çelebi Uluyol

<p>Nowadays, web browser tools are seen ıntensıvely durıng the usage of web applıcatıons. Because of that, browsers provıdes ınfrastructure of a largo majorıty of crımes. Because guılty or suspect can use the browsers to collect ınformatıons, to hıde hıs crıme, learn new crımınal methods or to apply they have learned. In thıs study, ıt ıs also seeked answers of how a process can be monıtored on the computers whıch are used on browsers, ın whıch fıles whıch datas are looked and when and whıch sıtes are accessed. Accordıng to research of W3counter web stats tool, Chrome Web browser, whıch has %43 persentage of across the world ın usage, ıs proses as the most demanded browser ın thıs study by users, and ıt ıs scented out ın thıs browser's related fıles. In these days, ''hıdden mode'' whıch take part ın vast majorıty of browsers ıs also examıned. Thıs feature of the browser, whıch ıs receıved reference, ıs tracked by testıng and ıs sought data ın RAM memory and fıle systems. Thus, '' hıdden mode'' effects are dıscussed ın provıdıng studıes about suspect or crımınal posıtıon people, what kınd of data can be obtaıned ın usıng '' hıdden mode” ıs revealed.</p><p> </p><p><strong>Özet</strong></p><p>Günümüzde internet uygulamalarının kullanımı sırasında web tarayıcı araçlarının yoğun bir şekilde kullanımı görülmektedir. Bu nedenle tarayıcılar, işlenen suçların büyük bir çoğunluğuna altyapı sağlar. Çünkü suçlu ya da şüpheli, tarayıcıları bilgi toplamak, suçunu gizlemek, yeni suç metotları öğrenmek ya da öğrendiklerini uygulamak için kullanabilir.  Bu çalışmada da tarayıcıların kullanıldığı bilgisayarlar üzerinde bırakılan izlerin tespitinde nasıl bir süreç izlenebileceği, hangi dosyalarda hangi verilere bakılabileceği ve ne zaman hangi sitelere erişim sağlandığı gibi çeşitli sorulara cevaplar aranmaktadır. w3counter adlı internet istatistik aracının yaptığı araştırmaya göre, dünya genelinde %43'lük bir kullanım alanına sahip olan Chrome web tarayıcısı, kullanıcılar tarafından en çok talep gören tarayıcı olarak bu araştırma içinde referans alınmaktadır ve bu tarayıcıya ait ilgili dosyalarda izler sürülmektedir. Ayrıca günümüz tarayıcıların büyük bir çoğunluğunda yer alan “<strong>gizli mod</strong>” özelliği incelenmektedir.  Referans alınan tarayıcının bu özelliği test edilerek iz sürülmekte, dosya  sistemlerinde ve RAM bellekte veri aranmaktadır.Böylelikle “gizli mod” kullanımında ne tür veriler elde edilebileceği ortaya konarak şüpheli ya da suçlu konumundaki kişilere ait delillendirme çalışmalarında “gizli mod” kullanımının etkileri tartışılmaktadır. </p>


2021 ◽  
Vol 22 (3) ◽  
pp. 365-385
Author(s):  
Honghong Zhang ◽  
Guoguo Zhang

The development of computer external storage has undergone the continuous change of perforated cassettes, tapes, floppy disks, hard disks, optical disks and flash disks. Internal memory has gone through the development of drum storage, Williams tube, mercury delay line, and magnetic core storage, until the emergence of semiconductor memory. Later RAM and ROM were born. RAM was divided into DRAM and SRAM. Due to its structure and cost advantages, DRAM has gradually developed into the widely used DDR series. At the same time, the low-power LPDDR series has also been advancing. At present, with the development of NVRAM technology, non-volatile random access memory with both internal and external storage functions is born. Dual-space storage based on NVRAM combines internal and external storage into one, and large capacity dual-space storage has become the development trend of storage.  


2018 ◽  
Vol 5 (2) ◽  
pp. 73-83
Author(s):  
Hussein Abed Ghannam

WhatsApp is a giant mobile instant message IM application with over 1billion users. The huge usage of IM like WhatsApp through giant smart phone “Android” makes the digital forensic researchers to study deeply. The artefacts left behind in the smartphone play very important role in any electronic crime, or any terror attack. “WhatsApp” as a biggest IM in the globe is considered to be very important resource for information gathering about any digital crime. Recently, end-to-end encryption and many other important features were added and no device forensic analysis or network forensic analysis studies have been performed to the time of writing this paper. This paper explains how can we able to extract the Crypt Key of “WhatsApp” to decrypt the databases and extract precious artefacts resides in the android system without rooting the device. Artefacts that extracted from the last version of WhatsApp have been analysed and correlate to give new valuable evidentiary traces that help in investigating. Many hardware and software tools for mobile and forensics are used to collect as much digital evidence as possible from persistent storage on android device. Some of these tools are commercial like UFED Cellebrite and Andriller, and other are open source tools such as autopsy, adb, WhatCrypt. All of these tools that forensically sound accompanied this research to discover a lot of artefacts resides in android internal storage in WhatsApp application.


Author(s):  
Phil Schani ◽  
S. Subramanian ◽  
Vince Soorholtz ◽  
Pat Liston ◽  
Jamey Moss ◽  
...  

Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause of these failures. The dislocation always occurs at the exact same location within the bitcell layout with respect to the single bit failing data state. The dislocation is believed to be associated with buried contact processing used in this type of bitcell layout.


Author(s):  
Ramachandra Chitakudige ◽  
Sarat Kumar Dash ◽  
A.M. Khan

Abstract Detection of both Insufficient Buried Contact (IBC) and cell-to-cell short defects is quite a challenging task for failure analysis in submicron Dynamic Random Access Memory (DRAM) devices. A combination of a well-controlled wet etch and high selectivity poly silicon etch is a key requirement in the deprocessing of DRAM for detection of these types of failures. High selectivity poly silicon etch methods have been reported using complicated system such as ECR (Electron Cyclotron Resonance) Plasma system. The fact that these systems use hazardous gases like Cl2, HBr, and SF6 motivates the search for safer alternative deprocessing chemistries. The present work describes high selectivity poly silicon etch using simple Reactive Ion Etch (RIE) plasma system using less hazardous gases such as CF4, O2 etc. A combination of controlled wet etch and high selectivity poly silicon etch have been used to detect both IBC and cell-to-cell shorts in submicron DRAMs.


Author(s):  
Felix Beaudoin ◽  
Stephen Lucarini ◽  
Fred Towler ◽  
Stephen Wu ◽  
Zhigang Song ◽  
...  

Abstract For SRAMs with high logic complexity, hard defects, design debug, and soft defects have to be tackled all at once early on in the technology development while innovative integration schemes in front-end of the line are being validated. This paper presents a case study of a high-complexity static random access memory (SRAM) used during a 32nm technology development phase. The case study addresses several novel and unrelated fail mechanisms on a product-like SRAM. Corrective actions were put in place for several process levels in the back-end of the line, the middle of the line, and the front-end of the line. These process changes were successfully verified by demonstrating a significant reduction of the Vmax and Vmin nest array block fallout, thus allowing the broader development team to continue improving random defectivity.


2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.


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