scholarly journals The Influence of Deposition Time on the Structural, Morphological, Optical and Electrical Properties of ZnO-rGO Nanocomposite Thin Films Grown in a Single Step by USP

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 73 ◽  
Author(s):  
R. Ramírez-Amador ◽  
J. Alvarado ◽  
G. Flores-Carrasco ◽  
L. Morales-de la Garza ◽  
S. Alcántara-Iniesta ◽  
...  

Thin films of nanocomposite of zinc oxide–reduced graphene oxide (ZnO-rGO) deposited on soda-lime glass substrates were prepared using ultrasonic spray pyrolysis (USP) at 460 °C. The preparation process does not use harsh acids and is environmentally friendly. The deposition period of 2, 3.5 and 5 min resulted in compact, uniform samples with thicknesses of 148, 250 and 365 nm, respectively. After performing structural, morphological, optical and electrical characterization of the prepared nanocomposite, an influence of the deposition time on the physical properties of the obtained films was determined. TEM analyses indicate that the ZnO-rGO nanocomposite presents ZnO nanoparticles anchored on graphene sheets, while XRD, X-ray Photoelectron Spectroscopy (XPS) and Raman results show the presence of a ZnO phase in the ZnO-rGO films. HR-SEM studies showed changes of the ZnO-rGO thin films morphology due to the incorporation of graphene into the ZnO films. Here, the particles of ZnO are similar to small grains of rice and graphene films have the appearance of a little “rose”. As the thickness of the film increases with deposition time, it reduces the structure of resistance of the nanocomposite thin films to 135 Ω. In addition, the optical transmission of the thin films in the visible region resulted affected. Here, we report a simple methodology for the preparation of ZnO-rGO nanocomposite thin films.

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.


2013 ◽  
Vol 716 ◽  
pp. 325-327
Author(s):  
Xiao Yan Dai ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Min Yao

In this paper, CdTe thin films were deposited on soda-lime glass substrates using CdTe powder as a source by close-spaced sublimation at higher source temperature of 700°C. The influence of the deposition time and the source-substrate distance on the chemical composition, crystal phase, surface morphology and optical band gap of CdTe thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope and the ultraviolet-visible-near infrared absorption spectra, respectively. At the deposition time of 60 min and the source-substrate distance of 5 mm, the CdTe thin films had pyramid appearance with the grain size of 15 μm.


2006 ◽  
Vol 321-323 ◽  
pp. 1687-1690 ◽  
Author(s):  
Hee Joon Kim ◽  
Dong Young Jang ◽  
Prem Kumar Shishodia ◽  
Akira Yoshida

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.


2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Bin Lv ◽  
Songbai Hu ◽  
Wei Li ◽  
Xia Di ◽  
Lianghuan Feng ◽  
...  

Deposition ofSb2Te3thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper.Sb2Te3thin films were characterized by x-ray diffraction (XRD), x-ray fluorescence (XRF), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred fromin situelectrical conductivity measurements. The results indicate that as-grownSb2Te3thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.


2020 ◽  
Vol 75 (10) ◽  
pp. 887-901
Author(s):  
Patrick Akata Nwofe ◽  
Mutsumi Sugiyama

AbstractThin films of chemical bath deposited tin antimony sulphide (Sn2Sb2S5) were tuned by varying the deposition time between 1 and 3 h, and postdeposition heat treatments. The films were grown on soda lime glass (SLG) and on molybdenum glass (Mo-SLG) substrates, respectively. The film thickness increased with deposition time up to 2 h and decreased thereafter. Structural analysis from X-ray diffractometry showed that the films were single phase. This was corroborated by X-ray photoelectron spectroscopy (XPS) analysis. Energy-dispersive spectroscopy results give antimony/sulphur (Sb/S) ratio and antimony/tin (Sb/Sn) ratio that increased with deposition time in the SLG substrates only. Optical constants extracted from optical spectroscopy measurements give optical absorption coefficient (α) > 104 cm−1, and direct energy bandgap with values in the range 1.30 to 1.48 eV. The Hall effect measurements performed on films grown on the SLG substrates indicated that the films were p-type electrical conductivity with electrical resistivity in the range 103 to 104 Ωcm. The films grown on the Mo-SLG served as absorber layers to fabricate thin film heterojunction solar cell devices in the substrate configuration with a cadmium sulphide (CdS) window partner. The best device yielded a short-circuit current density of 20 mA/cm2, open-circuit voltage of 0.012 V and a solar conversion efficiency of 0.04%.


2021 ◽  
Vol 13 (1) ◽  
pp. 9-20
Author(s):  
N. H. Sheeba ◽  
A. Namitha ◽  
K. M. Ramsiya ◽  
T. M. Ashitha ◽  
R. Suhail

Polycrystalline nanostructured PbS thin films are deposited onto soda-lime glass substrates by the method of chemical bath deposition (CBD) at different duration of deposition time. The structure and surface morphology of the films are characterized by X-ray diffraction (XRD) and field effect scanning electron microscopy (FE-SEM). XRD pattern exhibits polycrystalline structure with preferential orientation along (200) direction, parameters such as crystallite size, lattice constant, lattice-strain and dislocation density are calculated. The FE-SEM images show appearance of flower like structure on formation of PbS films which is indicative of suitability in gas sensing applications. Studies on optical properties carried out by UV-Vis spectroscopy measurements show bandgap in the range 1.65eV – 1.41eV. The photoluminescence spectra of the films exhibit two peaks centered at around 613 nm and 738 nm after excitation at 450 nm. Electrical studies from Hall measurements indicate the carrier concentration and mobility of the PbS samples corroborate the variations in the conductivity.


2007 ◽  
Vol 280-283 ◽  
pp. 795-800 ◽  
Author(s):  
Huogen Yu ◽  
Jia Guo Yu ◽  
Bei Cheng ◽  
C.H. Ao ◽  
S.C. Lee

TiO2 thin films were prepared on soda lime glass, fused quartz and stainless steel substrates by liquid phase deposition (LPD) method from a (NH4)2TiF6 aqueous solution upon the addition of boric acid (H3BO3), and then calcined at 500oC for 2 h. The prepared films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). It was found that the substrates obviously influenced the element composition and microstructure of TiO2 thin films. Except Ti, O and a small amount of F and N elements, which came from the precursor solution, some Si (or Fe) element in the thin films deposited on soda lime glass and quartz substrates (or on stainless steel substrate) was confirmed. The Si (or Fe) element in the thin films could be attributed to two sources. One was from the SiF6 2- ions (or FeF6 2- ions) formed by a reaction between the treatment solution and soda lime glass or quartz (or stainless steel) substrates. The other was attributed to the diffusion of Si (or Fe) from the surface of substrates into the TiO2 thin films after calcination at 500oC. The Si (or Fe) element in the TiO2 thin films could behave as a dopant and resulted in the formation of composite SiO2/TiO2 (or Fe2O3/TiO2) thin films on the substrates.


MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 133-139 ◽  
Author(s):  
Vinoth Kumar Jayaraman ◽  
Arturo Maldonado Alvarez ◽  
Maria De la Luz Olvera Amador

ABSTRACTAIZO (Al and In codoped ZnO) thin films were deposited on soda lime glass substrates by the ultrasonic spray pyrolysis (USP) technique. The spraying solution was prepared from zinc acetate dihydrate, aluminum acetyl acetonate and indium acetate. Depositions were carried out at three different temperatures, 425, 450 and 475 °C. Structural, morphological, optical and electrical properties were examined with respected to the deposition temperatures. All AIZO films grown with (002) preferential orientation confirmed from X-ray diffraction analysis. Hexagonal nanostructures were observed from Scanning electron microscopy (SEM) analysis. Minimum electrical resistivity of 2.52 x10-3 Ω-cm was achieved for AIZO films.


2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Ece Kutlu-Narin ◽  
Polat Narin ◽  
Sefer Bora Lisesivdin ◽  
Beyza Sarikavak-Lisesivdin

This study focuses on the growth and physical properties of ZnO thin films on different substrates grown by mist-CVD enhanced with ozone (O3) gas produced by corona discharge plasma using O2. Here, O3 is used to eliminate the defects related to oxygen in ZnO thin films. ZnO thin films are grown on amorphous soda-lime glass (SLG) and single crystals SiO2/Si (100) and c-plane Al2O3 substrates at 350°C of low growth temperature. All ZnO thin films show dominant (0002) diffraction peaks from X-ray diffraction (XRD). As expected, full width at half maximum (FWHM) of (0002) is decreasing in ZnO thin films on single-crystal substrates, especially c-Al2O3 due to similar crystal structure. It is found that the strain in the films is lowest in ZnO/c-Al2O3. The surface morphologies of the thin films are studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. Grown ZnO films have a hexagonal and triangular nanostructure with different nanostructure sizes depending on the used substrate types. The calculated surface roughness is dramatically decreased in ZnO/c-Al2O3 compared to the other grown structures. The confocal Raman measurements show the E2(H) peak of ZnO thin films at 437 cm−1. It is suggested that O3 gas produced by corona discharge plasma using O2 can be useful to obtain better crystal quality and physical properties in ZnO thin films.


2020 ◽  
Vol 20 (8) ◽  
pp. 4892-4898
Author(s):  
Zhenqian Zhao ◽  
Min Yu Yin ◽  
Sang Jik Kwon ◽  
Eou-Sik Cho

For the realization of the economical and reliable fabrication process of molybdenum disulfide (MoS2) layers, MoS2 thin films were directly formed a on soda-lime glass substrate by RF sputtering and subsequent rapid thermal annealing (RTA) at a temperature range of 400–550 °C. Using scanning electron microscopy and atomic force microscopy, it was possible to investigate more stable surface morphologies of MoS2 layers at lower RF sputtering powers irrespective of the RTA temperature. Even at an RTA temperature of less than 550 °C, the Raman exhibited more distinct E12g and A1g peaks for the MoS2 layers sputtered at lower RF powers. The X-ray photoelectron spectroscopy results revealed that more distinct peaks were observed at a higher RTA temperature, and the peak positions were moved to higher energies at a lower RF sputtering power. Based on the Hall measurements, higher carrier densities were obtained for the MoS2 layers sputtered at lower RF powers.


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