scholarly journals Investigation of Structural and Optical Properties of ZnO Thin Films Grown on Different Substrates by Mist-CVD Enhanced with Ozone Gas Produced by Corona Discharge Plasma

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Ece Kutlu-Narin ◽  
Polat Narin ◽  
Sefer Bora Lisesivdin ◽  
Beyza Sarikavak-Lisesivdin
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Corona Discharge ◽  
Discharge Plasma ◽  
Soda Lime ◽  
Zno Thin Films ◽  
Zno Films ◽  
Soda Lime Glass ◽  
Surface Morphologies ◽  
Corona Discharge Plasma

This study focuses on the growth and physical properties of ZnO thin films on different substrates grown by mist-CVD enhanced with ozone (O3) gas produced by corona discharge plasma using O2. Here, O3 is used to eliminate the defects related to oxygen in ZnO thin films. ZnO thin films are grown on amorphous soda-lime glass (SLG) and single crystals SiO2/Si (100) and c-plane Al2O3 substrates at 350°C of low growth temperature. All ZnO thin films show dominant (0002) diffraction peaks from X-ray diffraction (XRD). As expected, full width at half maximum (FWHM) of (0002) is decreasing in ZnO thin films on single-crystal substrates, especially c-Al2O3 due to similar crystal structure. It is found that the strain in the films is lowest in ZnO/c-Al2O3. The surface morphologies of the thin films are studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. Grown ZnO films have a hexagonal and triangular nanostructure with different nanostructure sizes depending on the used substrate types. The calculated surface roughness is dramatically decreased in ZnO/c-Al2O3 compared to the other grown structures. The confocal Raman measurements show the E2(H) peak of ZnO thin films at 437 cm−1. It is suggested that O3 gas produced by corona discharge plasma using O2 can be useful to obtain better crystal quality and physical properties in ZnO thin films.

scholarly journals Structural and optical characterization of Cu doped ZnO thin films deposited by RF magnetron sputtering

2019 ◽  
Vol 70 (7) ◽  
pp. 127-131
Author(s):  
Maria Toma ◽  
Nicolae Ursulean ◽  
Daniel Marconi ◽  
Aurel Pop
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Wavelength Region ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Soda Lime Glass ◽  
Structural And Optical Properties ◽  
Average Value ◽  
Film Substrate

Abstract Cu doped transparent ZnO thin films (CZO) were sputtered on soda lime glass substrates at three different distances between substrate and target. The effects of copper doping on the structural and optical properties were investigated by X-ray diffraction (XRD) and transmittance measurements. The XRD results indicated that CZO thin films have a preferential crystallographic orientation along the hexagonal wurtzite (002) axis. With increasing the distance between substrate-target, from 4 cm to 8 cm, the refractive index of the CZO films decreased. In the visible wavelength region, the average value of the transmittance was above 80%. Thus, significant changes in the structural and optical properties have occurred due to the decrease of the distance between the target-substrate and the residual compressive stress at the film-substrate interface arising during deposition.

Influence of Oxygen Addition and Substrate Temperature on Textured Growth of Al-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

2002 ◽  
Vol 721 ◽  
Author(s):  
P. Kuppusami ◽  
K. Diesner ◽  
I. Sieber ◽  
K. Ellmer
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Content ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Soda Lime Glass ◽  
Doped Zno ◽  
Oxygen Addition ◽  
Substrate Temperatures

AbstractSputtering of aluminium doped zinc oxide thin films from a ceramic ZnO:Al target requires a controlled addition of oxygen to the sputtering atmosphere in order to obtain films with low resistivity and high transparency. In this paper the influence of the oxygen addition and of the substrate temperature on the structural, morphological and electrical properties of ZnO:Al films is investigated. The oxygen addition leads to a minimum resistivity when the oxygen content during sputtering is 0.2%. This small amount of oxygen not only improves the transparency of the films, it also induces to a significant grain growth as revealed by scanning electron microscopy. A further increase of the oxygen content leads to highly resistive films, due to a complete oxidation of the dopant Al. As expected, higher substrate temperatures from about 373 to 673 K improve the of crystallinity and hence the resistivity. The lowest resistivity achieved was about 1.2.10-3 Ωcm. At still higher temperatures the resistivity increases which seems to be due to an outdiffusion of sodium into the ZnO:Al films from the soda lime glass, compensating part of the donors.

scholarly journals The Influence of Deposition Time on the Structural, Morphological, Optical and Electrical Properties of ZnO-rGO Nanocomposite Thin Films Grown in a Single Step by USP

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 73 ◽  
Author(s):  
R. Ramírez-Amador ◽  
J. Alvarado ◽  
G. Flores-Carrasco ◽  
L. Morales-de la Garza ◽  
S. Alcántara-Iniesta ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Visible Region ◽  
Ultrasonic Spray Pyrolysis ◽  
Soda Lime ◽  
Single Step ◽  
Zno Films ◽  
Soda Lime Glass ◽  
Nanocomposite Thin Films

Thin films of nanocomposite of zinc oxide–reduced graphene oxide (ZnO-rGO) deposited on soda-lime glass substrates were prepared using ultrasonic spray pyrolysis (USP) at 460 °C. The preparation process does not use harsh acids and is environmentally friendly. The deposition period of 2, 3.5 and 5 min resulted in compact, uniform samples with thicknesses of 148, 250 and 365 nm, respectively. After performing structural, morphological, optical and electrical characterization of the prepared nanocomposite, an influence of the deposition time on the physical properties of the obtained films was determined. TEM analyses indicate that the ZnO-rGO nanocomposite presents ZnO nanoparticles anchored on graphene sheets, while XRD, X-ray Photoelectron Spectroscopy (XPS) and Raman results show the presence of a ZnO phase in the ZnO-rGO films. HR-SEM studies showed changes of the ZnO-rGO thin films morphology due to the incorporation of graphene into the ZnO films. Here, the particles of ZnO are similar to small grains of rice and graphene films have the appearance of a little “rose”. As the thickness of the film increases with deposition time, it reduces the structure of resistance of the nanocomposite thin films to 135 Ω. In addition, the optical transmission of the thin films in the visible region resulted affected. Here, we report a simple methodology for the preparation of ZnO-rGO nanocomposite thin films.

Influence of Al, In codoping in enhancing the Figure of Merit of ZnO thin films for TCO Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 133-139 ◽  
Author(s):  
Vinoth Kumar Jayaraman ◽  
Arturo Maldonado Alvarez ◽  
Maria De la Luz Olvera Amador
Keyword(s):  
Thin Films ◽  
Zinc Acetate Dihydrate ◽  
Ultrasonic Spray Pyrolysis ◽  
Soda Lime ◽  
Sem Analysis ◽  
Zno Thin Films ◽  
Soda Lime Glass ◽  
Glass Substrates ◽  
Ultrasonic Spray ◽  
Different Temperatures

ABSTRACTAIZO (Al and In codoped ZnO) thin films were deposited on soda lime glass substrates by the ultrasonic spray pyrolysis (USP) technique. The spraying solution was prepared from zinc acetate dihydrate, aluminum acetyl acetonate and indium acetate. Depositions were carried out at three different temperatures, 425, 450 and 475 °C. Structural, morphological, optical and electrical properties were examined with respected to the deposition temperatures. All AIZO films grown with (002) preferential orientation confirmed from X-ray diffraction analysis. Hexagonal nanostructures were observed from Scanning electron microscopy (SEM) analysis. Minimum electrical resistivity of 2.52 x10-3 Ω-cm was achieved for AIZO films.

Effects of Radio-Frequency Sputtering Power on Low Temperature Formation of MoS2 Thin Films on Soda-Lime Glass Substrates

2020 ◽  
Vol 20 (8) ◽  
pp. 4892-4898
Author(s):  
Zhenqian Zhao ◽  
Min Yu Yin ◽  
Sang Jik Kwon ◽  
Eou-Sik Cho
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rf Sputtering ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Glass Substrates ◽  
Radio Frequency Sputtering ◽  
Sputtering Power ◽  
Surface Morphologies

For the realization of the economical and reliable fabrication process of molybdenum disulfide (MoS2) layers, MoS2 thin films were directly formed a on soda-lime glass substrate by RF sputtering and subsequent rapid thermal annealing (RTA) at a temperature range of 400–550 °C. Using scanning electron microscopy and atomic force microscopy, it was possible to investigate more stable surface morphologies of MoS2 layers at lower RF sputtering powers irrespective of the RTA temperature. Even at an RTA temperature of less than 550 °C, the Raman exhibited more distinct E12g and A1g peaks for the MoS2 layers sputtered at lower RF powers. The X-ray photoelectron spectroscopy results revealed that more distinct peaks were observed at a higher RTA temperature, and the peak positions were moved to higher energies at a lower RF sputtering power. Based on the Hall measurements, higher carrier densities were obtained for the MoS2 layers sputtered at lower RF powers.

Enhanced properties of In2O3–ZnO thin films deposited on soda lime glass due to barrier layers of SiO2 and TiO2

2004 ◽  
Vol 467 (1-2) ◽  
pp. 158-161 ◽  
Author(s):  
Jae-Suk Hong ◽  
Byoung-Rho Rhee ◽  
Hwa-Min Kim ◽  
Koo-Chul Je ◽  
Young-Jin Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Zno Thin Films ◽  
Soda Lime Glass ◽  
Barrier Layers ◽  
Enhanced Properties

Physical properties of graphene oxide GO-doped ZnO thin films for optoelectronic application

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
M. Karyaoui ◽  
D. Ben Jemia ◽  
M. Daoudi ◽  
A. Bardaoui ◽  
A. Boukhachem ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Physical Properties ◽  
Zno Thin Films ◽  
Optoelectronic Application ◽  
Doped Zno

Effect of Co-doping level on physical properties of ZnO thin films

2021 ◽  
Vol 113 ◽  
pp. 110812
Author(s):  
Abeer Salah ◽  
Ahmed M. Saad ◽  
Ahmed A. Aboud
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Doping Level ◽  
Zno Thin Films ◽  
Co Doping

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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