scholarly journals First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 433
Author(s):  
Yue Sun ◽  
Xuanwu Kang ◽  
Shixiong Deng ◽  
Yingkui Zheng ◽  
Ke Wei ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Power ◽  
Microwave Power ◽  
High Performance ◽  
Continuous Wave ◽  
Power Level ◽  
High Electron ◽  
Scattering Parameter ◽  
Electrical Field Strength ◽  
Mesa Technology

Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrier diode (SBD) and its demonstration in a microwave power limiter for the first time. The fabricated SBD achieved a very low differential specific on-resistance (RON,sp) of 0.21 mΩ·cm2, attributed to the steep-mesa technology, which assists in reducing the spacing between the edge of the anode and cathode to 2 μm. Meanwhile, a low leakage current of ~10−9 A/cm2@−10 V, a high forward current density of 9.4 kA/cm2 at 3 V in DC, and an ideality factor of 1.04 were achieved. Scattering parameter measurements showed that the insertion loss (S21) was lower than −3 dB until 3 GHz. In addition, a microwave power limiter circuit with two anti-parallel diodes was built and measured on an alumina substrate. The input power level reached 40 dBm (10 watts) in continuous-wave mode at 2 GHz, with a corresponding leakage power of 27.2 dBm (0.5 watts) at the output port of the limiter, exhibiting the great potential of GaN SBD in microwave power limiters.

A high-power solid state amplifier for Galileo satellite system exploiting European GaN technology

2016 ◽  
Vol 8 (4-5) ◽  
pp. 691-702 ◽  
Author(s):  
Rocco Giofré ◽  
Paolo Colantonio ◽  
Elisa Cipriani ◽  
Franco Giannini ◽  
Laura Gonzalez ◽  
...  
Keyword(s):  
Solid State ◽  
Output Power ◽  
High Power ◽  
Continuous Wave ◽  
Power Level ◽  
Operating Mode ◽  
Satellite System ◽  
Output Power Level ◽  
Gain Compression ◽  
Satellite Navigation System

This paper describes the development of an L-Band (f0= 1.575 GHz) high power and efficient solid state power amplifier (SSPA) designed for the European satellite navigation system (i.e. Galileo). The amplifier, developed in the framework of the European Project named SLOGAN, exploits the GH50-10 GaN technology available at United Monolithic Semiconductor foundry. The aim of the project is to offer, using as much as possible European technologies, a valid alternative to replace traveling wave tube amplifiers with more compact and reliable systems. All the SSPA functionalities, i.e. power supply, power conditioning and radio frequency amplification, are integrated in the developed architecture and accommodated in a single box with limited volume and mass. The required output power level is achieved by parallelizing several GaN die power bars of 12 and/or 25.6 mm. In continuous wave operating mode, the overall SSPA delivers an output power higher than 250 W at less than 2 dB of gain compression in the whole E1-band. Moreover, the registered gain and efficiency are higher than 67 dB and 54%, respectively.

Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates

2021 ◽  
Vol 21 (8) ◽  
pp. 4429-4433
Author(s):  
Zin-Sig Kim ◽  
Hyung-Seok Lee ◽  
Sung-Bum Bae ◽  
Hokyun Ahn ◽  
Sang-Heung Lee ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Schottky Barrier ◽  
High Power ◽  
Large Scale ◽  
Cutoff Frequency ◽  
Cvd Diamond ◽  
High Electron ◽  
Diamond Substrate ◽  
Rf Applications ◽  
Gan On Si

Devices based on AlGaN/GaN heterostructures, for example, Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have been intensively investigated for applications to high-frequency and high-power areas. Presently, the substrates widely distributed are AlGaN/GaN on SiC for its high performance in radio frequency (RF) applications, for examples high cutoff frequency (fT) or high maximum oscillation frequency (fmax), and AlGaN/GaN on Si for its high power performance, for examples high breakdown voltage or high voltage operation. Chemical vapor deposition (CVD) diamond substrates have a thermal conductivity of 12 W/cm·K, and this is a remarkable point because HEMTs or SBDs on AlGaN/GaN on CVD diamonds are one of the promising alternatives for power and RF applications. In comparison, the thermal conductivity of AlGaN/GaN on a sapphire substrate is 0.33 W/cm·K while that of AlGaN/GaN on a Si substrate is 1.3 W/cm·K and that of AlGaN/GaN on a SiC substrate is 4.9 W/cm·K. In this work, we fabricated SBDs with a 137 mm Schottky channel length on AlGaN/GaN on Si and also on a CVD diamond substrate. We also compared the thermal behaviors of these fabricated large scale SBDs on Si and a CVD diamond substrate.

Removal of Graffiti from Morelia’s Quarry Stone by High Power Diode Laser

2014 ◽  
Vol 1618 ◽  
pp. 263-270
Author(s):  
A. Sánchez-Castillo ◽  
F. Quintero ◽  
M. A. Espinosa-Medina ◽  
G. Carbajal-De la Torre ◽  
J. M. Pou-Saracho ◽  
...  
Keyword(s):  
Diode Laser ◽  
High Power ◽  
High Performance ◽  
Continuous Wave ◽  
Raw Material ◽  
Wave Regime ◽  
Historical Monuments ◽  
Artistic Heritage ◽  
Power Diode ◽  
High Power Diode Laser

ABSTRACTThe historical monuments such as cathedrals, public buildings and so on, are a fundamental part of artistic heritage of a country. They reflect, ultimately, much of its culture and history. For several decades, their aspect has been seriously changed by graffiti, which clearly endangers their preservation state and causes loss of their esthetic appearance and historic value. This damages seriously the self-esteem of residents who witness the continued and strong degradation of their cultural heritage. The aim of this work is to study the removal of graffiti from a characteristic stone which is used in Morelia (México) as the raw material for architectural monuments, using a high power diode laser treatment. We concluded that continuous wave regime leads to better results than modulated wave regime; additionally, a two laser passes process demonstrated a high performance.

A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

2012 ◽  
Vol 4 (3) ◽  
pp. 267-274 ◽  
Author(s):  
Dirk Schwantuschke ◽  
Christian Haupt ◽  
Rudolf Kiefer ◽  
Peter Brückner ◽  
Matthias Seelmann-Eggebert ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Continuous Wave ◽  
High Electron Mobility Transistors ◽  
High Gain ◽  
High Electron ◽  
Large Signal ◽  
V Band ◽  
High Power Amplifier ◽  
Dual Gate

In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.

High power continuous and quasi-continuous wave InGaAsP/InP broad-waveguide separate confinement-heterostructure multiquantum well diode lasers

1997 ◽  
Vol 33 (19) ◽  
pp. 1635 ◽  
Author(s):  
D.Z. Garbuzov ◽  
R.J. Menna ◽  
R.U. Martinelli ◽  
J.H. Abeles ◽  
J.C. Connolly
Keyword(s):  
High Power ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Multiquantum Well

High Performance β‐Ga 2 O 3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS 2 and TaS 2

2021 ◽  
pp. 2010303
Author(s):  
Ki‐Tae Kim ◽  
Hye‐Jin Jin ◽  
Wonjun Choi ◽  
Yeonsu Jeong ◽  
Hyung Gon Shin ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
High Performance ◽  
Large Work

scholarly journals Optimized Growth and Laser Application of Yb:LuAG Single-Crystal Fibers by Micro-Pulling-Down Technique

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 78
Author(s):  
Anye Wang ◽  
Jian Zhang ◽  
Shuai Ye ◽  
Xiaofei Ma ◽  
Baiyi Wu ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Power ◽  
Slope Efficiency ◽  
Continuous Wave ◽  
Beam Quality ◽  
Axial Direction ◽  
Optical Quality ◽  
Central Wavelength ◽  
High Power Lasers ◽  
Crystal Fibers

Single-crystal fibers (SCFs) have a great application potential in high-power lasers due to their excellent performance. In this work, high-quality and crack-free Yb3+:Lu3Al5O12 (Yb:LuAG) SCFs were successfully fabricated by the micro-pulling-down (μ-PD) technology. Based on the laser micrometer and the X-ray Laue diffraction results, these Yb:LuAG SCFs have a less than 5% diameter fluctuation and good crystallinity along the axial direction. More importantly, the distribution of Yb ions is proved to be uniform by electron probe microanalysis (EPMA) and the scanning electron microscope (SEM). In the laser experiment, the continuous-wave (CW) output power using a 1 mm diameter Yb:LuAG single-crystal fiber is determined to be 1.96 W, at the central wavelength of 1047 nm, corresponding to a slope efficiency of 13.55%. Meanwhile, by applying a 3 mm diameter Yb:LuAG SCF, we obtain a 4.7 W CW laser output at 1049 nm with the slope efficiency of 22.17%. The beam quality factor M2 is less than 1.1 in both conditions, indicating a good optical quality of the grown fiber. Our results show that the Yb:LuAG SCF is a potential solid-state laser gain medium for 1 μm high-power lasers.

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